Diodes-Incorporated-DMT2004UFDF-7
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DMT2004UFDF
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
0.6mm Profile
–
Ideal for Low Profile Applications
PCB Footprint of 4mm
2
I
D
Max
BV
DSS
R
DS(ON)
Max
T
A
= +25°C
Low Gate Threshold Voltage
6.0m
Ω
@ V
GS
= 10V
7.2m
Ω
@ V
GS
= 4.5V
12.5m
Ω
@ V
GS
= 2.5V
14.1A
12.9A
9.8A
Fast Switching Speed
24V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change
control (i.e.: parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified facilities),
please refer to the related automotive grade (Q-suffix) part.
A listing can be found at
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
Mechanical Data
Applications
Case: U-DFN2020-6
Battery Management Application
Power Management Functions
DC-DC Converters
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
–
NiPdAu over Copper Leadframe. Solderable
e4
per MIL-STD-202, Method 208
Weight: 0.0065 grams (Approximate)
U-DFN2020-6 (Type F)
D
G
S
Pin Out
Bottom View
Top View
Bottom View
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMT2004UFDF-7
DMT2004UFDF-13
Case
Reel Size (inches)
Quantity per Reel
U-DFN2020-6 (Type F)
U-DFN2020-6 (Type F)
7
13
3,000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
1 of 8
January 2020
© Diodes Incorporated
DMT2004UFDF
D
atasheet number: DS38790 Rev. 3 – 2
DMT2004UFDF
Marking Information
Site 1
4M = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: H = 2020)
4M
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2016
D
…
2020
H
2021
I
2022
J
2023
K
2024
L
2025
M
Aug
2026
N
Sep
2027
O
Oct
2028
P
Nov
2029
R
Dec
…
Feb
2
Month
Code
Jan
Mar
Apr
May
Jun
Jul
8
9
O
N
D
1
3
4
5
6
7
Site 2
4M = Product Type Marking Code
YWX = Date Code Marking
Y = Year (ex: 0 = 2020)
W = Week (ex: a = week 27; z represents week 52 and 53)
X = Internal Code (ex: U = Monday)
4M
Date Code Key
Year
2016
6
…
…
2020
0
2021
1
2022
2
2023
3
2024
4
2025
5
2026
6
2027
7
2028
8
2029
9
Code
Week
Code
1-26
A-Z
27-52
53
a-z
z
Internal Code
Code
Sun
Mon
Tue
Wed
Thu
Fri
Sat
T
U
V
W
X
Y
Z
2 of 8
January 2020
© Diodes Incorporated
DMT2004UFDF
D
atasheet number: DS38790 Rev. 3 – 2
DMT2004UFDF
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
24
Unit
V
Gate-Source Voltage
±12
V
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
14.1
11.2
A
Continuous Drain Current (Note 6) V
GS
= 10V
I
D
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
Continuous Source-Drain Diode Current
(Note 6)
Avalanche Current (Note 7) L = 0.1mH
70
2
A
A
I
DM
I
S
I
AS
26
36
A
Avalanche Energy (Note 7) L = 0.1mH
mJ
E
AS
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
Value
0.8
Unit
W
T
A
= +25°C
Steady State
P
D
R
θ
JA
P
D
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
149
1.8
°C/W
W
T
A
= +25°C
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 6)
70
°C/W
W
R
θ
JA
P
D
12.5
T
C
= +25°C
Steady State
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
12
°C/W
°C
R
θ
JC
T
J,
T
STG
-55 to +150
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
24
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
µA
nA
Zero Gate Voltage Drain Current (T
J
= +25°C)
Gate-Source Leakage
±100
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
0.55
—
—
4.8
5.8
9.6
0.65
1.45
6
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 9A
V
GS
= 4.5V, I
D
= 8A
V
GS
= 2.5V, I
D
= 5A
V
GS
= 0V, I
S
= 2A
—
Static Drain-Source On-Resistance
7.2
12.5
1.0
—
Diode Forward Voltage
—
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
—
—
—
—
—
—
—
1683
581
559
1.6
C
iss
C
oss
C
rss
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
V
DS
= 0V, V
GS
= 0V,
f = 1.0MHz
Gate Resistance
—
Ω
R
G
29.6
53.7
4.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge
(V
GS
= 10V)
Gate-Source Charge
Q
g
Q
g
nC
ns
V
DD
= 15V, I
D
= 9A
Q
gs
Q
gd
t
D(ON)
t
R
13.4
3.9
Gate-Drain Charge
Turn-On Delay Time
9.6
Turn-On Rise Time
V
DD
= 15V, V
GS
= 10V,
R
G
= 3
Ω
, I
D
= 9A
30.8
38.6
11.2
22.9
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
ns
t
RR
I
F
= 1.5A, di/dt = 100A/
μ
s
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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January 2020
© Diodes Incorporated
DMT2004UFDF
D
atasheet number: DS38790 Rev. 3 – 2
DMT2004UFDF
20
18
16
14
12
10
8
30.0
25.0
20.0
15.0
10.0
5.0
V
DS
=5V
V
GS
= 2.0V
V
GS
= 2.5V
V
GS
= 3.0V
V
GS
= 4.0V
V
GS
= 4.5V
T
J
= 150
℃
T
J
= 125
℃
T
J
= 85
℃
T
J
= 25
℃
V
GS
= 10.0V
6
4
V
GS
= 1.5V
T
J
= -55
℃
2
V
GS
= 1.2V
0
0.0
0
0.5
1
1.5
2
2.5
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
0.01
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.01
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
V
GS
= 2.5V
V
GS
= 4.5V
I
D
= 12A
V
GS
= 10.0V
0
2
4
6
8
10
12
0
5
10
15
20
25
30
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
0.008
1.8
1.6
1.4
1.2
1
V
GS
= 10V
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
T
J
= 125
℃
T
J
= 150
℃
V
GS
= 4.5V, I
D
= 12A
T
J
= 85
℃
T
J
= 25
℃
V
GS
= 2.5V, I
D
= 12A
T
J
= -55
℃
0.8
0.6
-50 -25
0
25
50
75 100
125 150
0
2
4
6
8
10 12 14 16 18 20
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 6. On-Resistance Variation with Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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January 2020
© Diodes Incorporated
DMT2004UFDF
D
atasheet number: DS38790 Rev. 3 – 2
DMT2004UFDF
1.2
1
0.012
0.01
V
GS
= 2.5V, I
D
= 12A
I
D
= 1mA
0.8
0.6
0.4
0.2
0
0.008
0.006
0.004
0.002
I
D
= 250
μ
A
V
GS
= 4.5V, I
D
= 12A
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs.Junction
Temperature
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
10000
1000
100
20
18
16
14
12
10
8
V
GS
= 0V
f=1MHz
C
iss
C
oss
T
J
= 85
℃
T
J
= 150
℃
C
rss
T
J
= 25
℃
6
T
J
= 125
℃
4
T
J
= -55
℃
2
0
0
2
4
6
8
10 12 14 16 18 20
0
0.3
0.6
0.9
1.2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
100
10
10
8
R
DS(ON)
Limited
P
W
=100µs
6
P
W
=1ms
V
DS
= 15V, I
D
= 9A
1
P
W
=10ms
P
W
=100ms
4
P
W
=1s
P
W
=10s
T
J(Max)
=150
℃
0.1
0.01
T
C
=25
℃
Single Pulse
2
DC
DUT on 1*MRP board
V
GS
=10V
0
0.01
0.1
1
10
100
0
10
20
30
40
50
60
Qg (nC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
5 of 8
January 2020
© Diodes Incorporated
DMT2004UFDF
D
atasheet number: DS38790 Rev. 3 – 2
DMT2004UFDF
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
D=0.005
D=Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 148
℃
/W
Duty Cycle, D = t1 / t2
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
6 of 8
January 2020
© Diodes Incorporated
DMT2004UFDF
D
atasheet number: DS38790 Rev. 3 – 2
DMT2004UFDF
Package Outline Dimensions
U-DFN2020-6 (Type F)
U-DFN2020-6
(Type F)
Min Max
0.57
0.63
0.00 0.05
A3
A1
Dim
A
A1
A3
b
Typ
0.60
0.03
0.15
0.30
2.00
0.95
0.38
2.00
1.15
0.70
A
Seating Plane
–
–
0.25 0.35
1.95 2.05
0.85 1.05
D
D
D2
e3
k2
e4
D2a
0.33 0.43
E
E2
E2a
e
1.95 2.05
1.05 1.25
0.65 0.75
0.65 BSC
D2a
E2a
z2
e2
e3
e4
k
0.863 BSC
0.70 BSC
0.325 BSC
0.37 BSC
D2
E
E2
k1
k2
L
0.15 BSC
0.36 BSC
0.225 0.325
0.275
0.20 BSC
k1
e2
L
k
z1
z
z1
z2
0.110 BSC
0.20 BSC
e
b
All Dimensions in mm
z(4x)
Suggested Pad Layout
U-DFN2020-6 (Type F)
X3
Y
Value
C
X
Dimensions
(in mm)
0.650
0.400
0.480
0.950
1.700
0.425
0.800
1.150
1.450
2.300
C
X
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y2
Y1 Y4
X1
Pin1
X2
7 of 8
January 2020
© Diodes Incorporated
DMT2004UFDF
D
atasheet number: DS38790 Rev. 3 – 2
DMT2004UFDF
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
8 of 8
January 2020
© Diodes Incorporated
DMT2004UFDF
D
atasheet number: DS38790 Rev. 3 – 2
Mouser Electronics
Authorized Distributor
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