Diodes-Incorporated-DMT2004UFG-13
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DMT2004UFG
N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary
Features and Benefits
Low R
DS(ON)
–
ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
100% Unclamped Inductive Switch (UIS) Test in Production
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
I
D
max
T
C
= +25°C
70A
BV
DSS
R
DS(ON)
max
5.0m
Ω @ V
GS
= 10V
6.5m
Ω @ V
GS
= 4.5V
10.0m
Ω @ V
GS
= 2.5V
24V
60A
45A
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case: PowerDI3333-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminal Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Backlighting
Power Management Functions
DC-DC Converters
Weight: 0.072 grams (Approximate)
PowerDI3333-8
D
Pin 1
S
S
8
7
6
5
1
2
3
4
S
G
G
D
D
D
D
S
Top View
Internal Schematic
Top View
Bottom View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMT2004UFG-7
DMT2004UFG-13
Case
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
PowerDI3333-8
PowerDI3333-8
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html
for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free
“Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
SF2 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
SF2
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
July 2016
© Diodes Incorporated
DMT2004UFG
Document number: DS38956
Rev. 1 – 2
DMT2004UFG
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
24
Unit
V
Gate-Source Voltage
±12
V
V
GSS
Steady
State
T
C
= +25°C
T
C
= +70°C
70
55
A
Continuous Drain Current (Note 7) V
GS
= 10V
I
D
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
Continuous Source-Drain Diode Current (Note 6)
Avalanche Current (Note 8) L = 0.1mH
90
2.5
26
36
A
A
I
DM
I
S
I
AS
A
Avalanche Energy (Note 8) L = 0.1mH
mJ
E
AS
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
R
Value
1.2
Units
W
Total Power Dissipation
T
A
= +25°C
Steady State
T
A
= +25°C
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation
106
°C/W
W
JA
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
°C/W
°C/W
°C
R
JA
3.5
R
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 9)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
24
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μA
µA
nA
Zero Gate Voltage Drain Current (T
J
= +25°C)
Gate-Source Leakage
V
DS
= 20V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
±100
I
GSS
ON CHARACTERISTICS
(Note 9)
Gate Threshold Voltage
0.55
—
—
3.7
4.5
7.5
0.65
1.45
5.0
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 12A
V
GS
= 4.5V, I
D
= 12A
V
GS
= 2.5V, I
D
= 12A
V
GS
= 0V, I
S
= 2A
—
Static Drain-Source On-Resistance
6.5
—
10.0
1.0
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 10)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1683
581
559
1.6
C
iss
C
oss
C
rss
R
G
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
29.6
53.7
4.2
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
Q
g
nC
ns
V
DD
= 15V, I
D
= 9A
Q
gs
Q
gd
t
D(ON)
t
R
13.4
3.9
Gate-Drain Charge
Turn-On Delay Time
9.6
Turn-On Rise Time
V
DD
= 15V, V
GS
= 10V,
R
G
= 3
Ω
, I
D
= 9A
30.8
38.6
11.2
22.9
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
ns
t
RR
I
F
= 1.5A, di/dt = 100A/
μ
s
nC
Q
RR
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°C
.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
PowerDI is a registered trademark of Diodes Incorporated.
2 of 7
July 2016
© Diodes Incorporated
DMT2004UFG
Document number: DS38956
Rev. 1 – 2
DMT2004UFG
20
18
16
14
12
10
8
30.0
25.0
20.0
15.0
10.0
5.0
V
DS
= 5V
V
GS
= 2.0V
V
GS
= 2.5V
V
GS
= 3.0V
V
GS
= 4.0V
V
GS
= 4.5V
T
J
= 150
℃
T
J
= 85
℃
T
J
= 25
℃
V
GS
= 10.0V
6
T
J
= 125
℃
V
GS
= 1.5V
4
T
J
= -55
℃
2
V
GS
= 1.2V
0
0.0
0
0.5
1
1.5
2
2.5
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
0.01
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.01
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
V
GS
= 2.5V
V
GS
= 4.5V
I
D
= 12A
V
GS
= 10.0V
0
2
4
6
8
10
12
0
5
10
15
20
25
30
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.008
1.8
1.6
1.4
1.2
1
V
GS
= 10V
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
T
J
= 125
℃
T
J
= 150
℃
V
GS
= 4.5V, I
D
= 12A
T
J
= 85
℃
T
J
= 25
℃
V
GS
= 2.5V, I
D
= 12A
T
J
= -55
℃
0.8
0.6
-50 -25
0
25
50
75 100
125 150
0
2
4
6
8
10 12 14 16 18 20
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
PowerDI is a registered trademark of Diodes Incorporated.
3 of 7
July 2016
© Diodes Incorporated
DMT2004UFG
Document number: DS38956
Rev. 1 – 2
DMT2004UFG
1.2
1
0.012
0.01
V
GS
= 2.5V, I
D
= 12A
I
D
= 1mA
0.8
0.6
0.4
0.2
0
0.008
0.006
0.004
0.002
I
D
= 250
μ
A
V
GS
= 4.5V, I
D
= 12A
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs.Junction
Temperature
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
20
18
16
14
12
10
8
10000
1000
100
V
GS
= 0V
f = 1MHz
C
iss
C
oss
T
J
= 85
℃
T
J
= 150
℃
C
rss
T
J
= 25
℃
6
T
J
= 125
℃
4
T
J
= -55
℃
2
0
0
2
4
6
8
10 12 14 16 18 20
0
0.3
0.6
0.9
1.2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
100
10
10
8
R
DS(ON)
Limited
DC
6
P
W
= 10s
P
W
= 1s
V
DS
= 15V, I
D
= 9A
1
4
P
W
= 100ms
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on 1*MRP Board
V
GS
= 10V
P
W
= 10ms
0.1
0.01
2
P
W
= 1ms
P
W
=100µs
0
0.01
0.1
1
10
100
0
10
20
30
40
50
60
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Qg (nC)
Figure 11. Gate Charge
PowerDI is a registered trademark of Diodes Incorporated.
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July 2016
© Diodes Incorporated
DMT2004UFG
Document number: DS38956
Rev. 1 – 2
DMT2004UFG
1
D=0.9
D=0.5
D=0.3
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
D=0.005
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 103
℃
/W
Duty Cycle, D = t1/t2
D=Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
PowerDI is a registered trademark of Diodes Incorporated.
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July 2016
© Diodes Incorporated
DMT2004UFG
Document number: DS38956
Rev. 1 – 2
DMT2004UFG
Package Outline Dimensions
PowerDI3333-8
A3
A1
PowerDI3333-8
Dim Min
Max Typ
0.75 0.85 0.80
A1
0.00 0.05 0.02
A
Seating Plane
A
A3
b
0.203
0.27 0.37 0.32
D
L( 4x)
E4
b2
0.15 0.25 0.20
3.25 3.35 3.30
D2
2.22 2.32 2.27
3.25 3.35 3.30
D2
D
1
E
Pin #1 ID
E2
1.56 1.66 1.61
E3
0.79 0.89 0.84
E4
1.60 1.70 1.65
b2( 4x)
E
e
L
L1
z
0.65
0.35 0.45 0.40
E3
E2
0.39
0.515
L1( 3x)
All Dimensions in mm
8
z( 4x)
b
e
Suggested Pad Layout
PowerDI3333-8
X3
X2
Dimensions Value
(in mm)
8
C
X
X1
X2
X3
Y
Y1
Y2
Y3
0.650
0.420
0.420
0.230
2.370
0.700
1.850
2.250
3.700
X1
Y1
Y2
Y3
Y
X
1
C
PowerDI is a registered trademark of Diodes Incorporated.
6 of 7
July 2016
© Diodes Incorporated
DMT2004UFG
Document number: DS38956
Rev. 1 – 2
DMT2004UFG
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
PowerDI is a registered trademark of Diodes Incorporated.
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July 2016
© Diodes Incorporated
DMT2004UFG
Document number: DS38956
Rev. 1 – 2
