Diodes-Incorporated-DMT3003LFG-13
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DMT3003LFG
Green
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low R
DS(ON)
–
Ensures On-State Losses are Minimized
Excellent Q
GD
× R
DS(ON)
Product (FOM)
I
D
Max
BV
DSS
R
DS(ON)
Max
T
C
= +25°C
Advanced Technology for DC-DC Converts
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
3.2m
Ω @ V
GS
= 10V
5.5m
Ω @ V
GS
= 4.5V
100A
85A
30V
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
100% UIS (Avalanche) Rated
Description
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Applications
Case: PowerDI
®
3333-8
Backlighting
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminal Finish
–
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
Power Management Functions
DC-DC Converters
PowerDI3333-8
D
Pin 1
S
S
S
8
7
6
5
1
2
3
4
G
G
D
D
D
D
S
Top View
Internal Schematic
Bottom View
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMT3003LFG-7
DMT3003LFG-13
Case
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
PowerDI3333-8
PowerDI3333-8
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html
for more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are define
d as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
SG2 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
SG2
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
June 2016
© Diodes Incorporated
DMT3003LFG
Document number: DS37819 Rev. 2 – 2
DMT3003LFG
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Units
V
V
Gate-Source Voltage
±20
V
GSS
T
C
= +25°C
100
90
A
A
Continuous Drain Current (Note 6) V
GS
= 10V
Continuous Drain Current (Note 5) V
GS
= 10V
I
D
I
D
T
C
= +70°C
T
A
= +25°C
T
A
= +70°C
22
18
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
Avalanche Current, L=1mH
3
A
A
I
S
100
16
I
DM
I
AS
E
AS
A
Avalanche Energy, L=1mH
250
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
2.4
Units
W
T
A
= +25°C
T
C
= +25°C
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 5)
52
°C/W
W
R
θ
JA
62
2
P
D
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
°C/W
°C
R
θ
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
30
—
—
—
—
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 1mA
Zero Gate Voltage Drain Current
1
μ
A
V
DS
= 24V, V
GS
= 0V
V
GS
= +20V, V
DS
= 0V
V
GS
= -16V, V
DS
= 0V
Gate-Source Leakage
±100
nA
I
GSS
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
1
—
2.4
4
3
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 15A
V
GS
= 0V, I
S
= 10A
—
—
—
3.2
5.5
1
Static Drain-Source On-Resistance
Diode Forward Voltage
0.75
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2,370
1,360
240
0.6
20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
C
ISS
C
OSS
C
RSS
R
G
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
G
44
Q
G
nC
ns
V
DS
= 15V, I
D
= 20A
7
Q
GS
Q
GD
t
D(ON)
t
R
8
Gate-Drain Charge
6.2
4.3
21
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 15V, V
GS
= 10V,
R
L
= 0.75
Ω
, R
G
= 3
Ω
, I
D
= 20A
Turn-Off Delay Time
t
D(OFF)
t
F
8
Turn-Off Fall Time
25
Bodyy Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
t
RR
I
F
= 15A, di/dt = 500A/
μ
s
37
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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June 2016
© Diodes Incorporated
DMT3003LFG
Document number: DS37819 Rev. 2 – 2
DMT3003LFG
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
GS
= 10.0V
V
GS
= 4.5V
V
DS
= 5V
V
GS
= 4.0V
V
GS
= 3.0V
V
GS
= 3.5V
85
o
C
V
GS
= 2.8V
125
o
C
150
o
C
25
o
C
-55
o
C
V
GS
= 2.5V
1.5
V
GS
= 2.2V
0
0.0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
1
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.006
0.005
0.004
0.003
0.002
0.001
0
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
V
GS
= 4.5V
V
GS
= 10V
I
D
= 20A
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14
16
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
0.005
0.004
0.003
0.002
0.001
0
2.5
2
V
GS
= 10V
150
o
C
V
GS
= 10V, I
D
= 20A
125
o
C
85
o
C
1.5
1
25
o
C
V
GS
= 4.5V, I
D
= 15A
-55
o
C
0.5
0
-50 -25
0
25
50
75 100
125 150
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
Figure 6. On-Resistance Variation with Junction
Temperature
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June 2016
© Diodes Incorporated
DMT3003LFG
Document number: DS37819 Rev. 2 – 2
DMT3003LFG
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
2.5
2
I
D
= 1mA
V
GS
= 4.5V, I
D
= 15A
1.5
1
I
D
= 250µA
V
GS
= 10V, I
D
= 20A
0.5
0
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
Figure 7. On-Resistance Variation with Junction
Temperature
20
15
10
5
10000
1000
100
V
GS
= 0V
f=1MHz
C
iss
C
oss
T
J
= 85
o
C
T
J
= 125
o
C
T
J
= 25
o
C
C
rss
T
J
= 150
o
C
T
J
= -55
o
C
10
0
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
1000
100
10
R
DS(ON)
Limited
P
W
=100µs
6
P
W
=1ms
P
W
=10ms
4
1
P
W
=100ms
V
DS
= 15V, I
D
= 20A
T
J(Max)
= 150
℃
T
A
= 25
℃
Single Pulse
P
W
=1s
P
W
=10s
2
0.1
DUT on 1*MRP Board
V
GS
=10V
DC
0.01
0
0.01
0.1
1
10
100
0
5
10 15 20 25 30 35 40 45 50
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Q
g
(nC)
Figure 11. Gate Charge
4 of 7
June 2016
© Diodes Incorporated
DMT3003LFG
Document number: DS37819 Rev. 2 – 2
DMT3003LFG
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
0.001
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 51
℃
/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
June 2016
© Diodes Incorporated
DMT3003LFG
Document number: DS37819 Rev. 2 – 2
DMT3003LFG
Package Outline Dimensions
PowerDI3333-8
PowerDI3333-8
Dim Min
Max Typ
0.75 0.85 0.80
A1
0.00 0.05 0.02
A3
A1
A
A
Seating Plane
A3
b
b2
D
0.203
0.27 0.37 0.32
0.20
3.25 3.35 3.30
D
L(4x)
D2
2.22 2.32 2.27
3.25 3.35 3.30
E2
1.56 1.66 1.61
0.65
e1
0.79 0.89 0.84
D2
E
1
e
Pin #1 ID
L
L1
z
0.35 0.45 0.40
0.39
b2(4x)
L1(3x)
E
0.515
e1
All Dimensions in mm
E2
8
z(4x)
b
e
Suggested Pad Layout
PowerDI3333-8
X3
Dimensions Value
(in mm)
X2
C
X
0.650
0.420
0.420
0.230
2.370
0.700
1.850
2.250
3.700
8
X1
X2
X3
Y
X1
Y1
Y2
Y1
Y2
Y3
Y3
Y
X
1
C
6 of 7
June 2016
© Diodes Incorporated
DMT3003LFG
Document number: DS37819 Rev. 2 – 2
DMT3003LFG
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
7 of 7
June 2016
© Diodes Incorporated
DMT3003LFG
Document number: DS37819 Rev. 2 – 2
Mouser Electronics
Authorized Distributor
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