Diodes-Incorporated-DMT3004LPS-13
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DMT3004LPS
Green
30V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary
Features and Benefits
Low R
DS(ON)
–
Minimizes On-State Losses
Excellent Q
gd
x R
DS(ON)
Product (FOM)
Advanced Technology for DC-DC Converters
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
100% Unclamped Inductive Switching
–
Ensures More Reliability
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change
control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP
capable, and manufactured in IATF 16949 certified facilities),
please refer to the related automotive grade (Q-suffix) part. A
listing can be found at
This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
I
D
Max
BV
DSS
R
DS(ON)
Max
T
C
= +25°C
3.8m
Ω @ V
GS
= 10V
6m
Ω @ V
GS
= 4.5V
140A
110A
30V
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) yet maintain superior switching performance, making it ideal
for high-efficiency power management applications.
Backlighting
Power management functions
DC-DC converters
Mechanical Data
Package: PowerDI
®
5060-8
Package Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
–
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Site1:
PowerDI5060-8
S
S
D
D
D
D
Pin1
S
G
Top View
Pin Configuration
Top View
Bottom View
Internal Schematic
Site2:
PowerDI5060-8 (SWP) (Type UX)
D
S
S
D
D
D
D
Pin1
S
G
G
S
Top View
Pin Configuration
Internal Schematic
Bottom View
Top View
PowerDI is a registered trademark of Diodes Incorporated.
1 of 9
August 2022
© 2022 Copyright Diodes Incorporated. All Rights Reserved.
DMT3004LPS
Document number: DS37045 Rev. 5 – 2
DMT3004LPS
Ordering Information
(Note 4)
Packing
Part Number
Package
Qty.
2,500
2,500
Carrier
Tape & Reel
Tape & Reel
DMT3004LPS-13
DMT3004LPS-13
PowerDI5060-8
PowerDI5060-8 (SWP) (Type UX)
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
D
D
D
D
D
D
D
D
= Manufacturer
’
s Marking
T3004LS = Product Type Marking Code
YYWW or YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 22 = 2022)
WW = Week Code (01 to 53)
T3004LS
YY WW
T3004LS
YY WW
S
S
S
G
S
S
S
G
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
30
V
V
DSS
+20
-16
Gate-Source Voltage
V
A
A
V
GSS
I
D
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
T
C
= +70°C
T
A
= +25°C
T
C
= +25°C
T
C
= +25°C
21
17
Continuous Drain Current, V
GS
= 10V (Note 5)
Continuous Drain Current, V
GS
= 10V
140
110
I
D
Maximum Continuous Body Diode Forward Current (Note 5)
Maximum Continuous Body Diode Forward Current
Maximum Body Diode Forward Pulse Current
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.3mH
3
A
A
I
S
I
S
48
180
180
27
A
I
SM
I
DM
I
AS
E
AS
A
A
Avalanche Energy, L=0.3mH
110
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
T
A
= +25°C
(Note 5)
2.7
Total Power Dissipation
W
P
D
113
47
T
C
= +25°C
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case
R
θ
JA
R
θ
JC
°C/W
1.1
Operating and Storage Temperature Range
-55 to +150
°C
T
J,
T
STG
Note:
5. R
is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1in. square copper plate. R
is guaranteed by design
θ
JC
θ
JA
while R
is determined by the user’s board design.
θ
JA
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August 2022
© 2022 Copyright Diodes Incorporated. All Rights Reserved.
DMT3004LPS
Document number: DS37045 Rev. 5 – 2
DMT3004LPS
Electrical Characteristics
(T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
30
—
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
—
1
μ
A
V
DS
= 24V, V
GS
= 0V
V
GS
= +20V, V
DS
= 0V
V
GS
= -16V, V
DS
= 0V
Gate-Source Leakage
—
—
±100
nA
I
GSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
1
—
—
3
3.8
6
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 7A
V
GS
= 0V, I
S
= 1A
—
—
—
Static Drain-Source On-Resistance
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
0.70
1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2,370
1,360
240
0.7
43.7
6.9
8
C
iss
C
oss
C
rss
R
g
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 15V, I
D
= 20A
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
nC
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
6.2
4.2
21
Turn-On Rise Time
V
DD
= 15V, V
GS
= 10V,
R
G
= 3
Ω
, R
L
= 0.75
Ω
ns
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
8
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
25
ns
t
RR
I
F
= 15A, di/dt = 500A/
μ
s
37
nC
Q
RR
Notes:
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
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August 2022
© 2022 Copyright Diodes Incorporated. All Rights Reserved.
DMT3004LPS
Document number: DS37045 Rev. 5 – 2
DMT3004LPS
30
25
20
15
10
5
30.0
25.0
20.0
15.0
10.0
5.0
V
GS
= 10.0V
V
GS
= 4.5V
V
DS
= 5V
V
GS
= 3.0V
V
GS
= 4.0V
V
GS
= 3.5V
V
GS
= 2.8V
V
GS
= 2.5V
150
℃
125
℃
85
℃
25
℃
V
GS
= 2.2V
-55
℃
0
0.0
0
0.5
1
1.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.007
0.006
0.005
0.004
0.003
0.002
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
V
GS
= 4.5V
V
GS
= 10V
I
D
= 20A
0
2
4
6
8
10
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
12
14
16
0
5
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
2.5
2
0.006
0.005
0.004
0.003
0.002
V
GS
= 10V
150
℃
V
GS
= 10V, I
D
= 20A
1.5
1
125
℃
85
℃
V
GS
= 4.5V, I
D
= 15A
25
℃
0.5
0
-55
℃
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 6. On-Resistance Variation with Junction
Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
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August 2022
© 2022 Copyright Diodes Incorporated. All Rights Reserved.
DMT3004LPS
Document number: DS37045 Rev. 5 – 2
DMT3004LPS
2.5
2
0.008
0.007
0.006
0.005
0.004
0.003
0.002
I
D
= 1mA
V
GS
= 4.5V, I
D
= 15A
1.5
1
I
D
= 250
μ
A
0.5
0
V
GS
= 10V, I
D
= 20A
-50
-25
0
25
50
75
100 125 150
-50 -25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Junction
Temperature
Figure 8. Gate Threshold Variation vs. Junction
Temperature
20
15
10
5
10000
f=1MHz
V
GS
= 0V
C
iss
1000
100
10
C
oss
T
J
= 125
o
C
T
J
= 85
o
C
C
rss
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1000
100
10
10
8
P
W
=100µs
R
DS(ON)
Limited
P
W
=1ms
P
W
=10ms
P
W
=100ms
P
W
=1s
P
W
=10s
6
4
V
DS
= 15V, I
D
= 20A
DC
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
1
2
DUT on Infinite Heatsink
V
GS
= 10V
0.1
0
0.1
1
10
100
0
5
10 15 20 25 30 35 40 45 50
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Q
g
(nC)
Figure 11. Gate Charge
5 of 9
August 2022
© 2022 Copyright Diodes Incorporated. All Rights Reserved.
DMT3004LPS
Document number: DS37045 Rev. 5 – 2
DMT3004LPS
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
0.0001
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 1.08
℃
/W
Duty Cycle, D = t1 / t2
D=0.005
D=Single Pulse
0.001
1E-06
1E-05
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
6 of 9
August 2022
© 2022 Copyright Diodes Incorporated. All Rights Reserved.
DMT3004LPS
Document number: DS37045 Rev. 5 – 2
DMT3004LPS
Package Outline Dimensions
Site1:
PowerDI5060-8
PowerDI5060-8
Dim
A
A1
b
b2
b3
c
Min
0.90
0.00
0.33
0.200
0.40
0.230
Max
1.10
0.05
0.51
0.350 0.273
0.80 0.60
0.330 0.277
5.15 BSC
5.10
4.10
4.30
6.15 BSC
6.00
3.68
4.39
1.27 BSC
0.71
0.71
0.200 0.175
4.035 3.635
1.40
12°
8°
Typ
1.00
D
D1
Detail A
c
0( 4X)
A1
0.41
E1 E
D
e
D1
D2
D3
E
E1
E2
E3
e
G
K
L
L1
M
4.70
3.70
3.90
4.90
3.90
4.10
01 (
4X)
1
5.60
3.28
3.99
5.80
3.48
4.19
b (
8X)
L
e
/
2
1
b2 (
4X)
D3
K
0.51
0.51
0.51
0.100
3.235
1.00
10°
0.61
0.61
A
D2
b3 (
4X)
E3
E2
M
M1
M1
Θ
Θ1
1.21
11°
7°
Detail A
G
L1
6°
All Dimensions in mm
Site2:
PowerDI5060-8 (SWP) (Type UX)
D
D1
PowerDI5060-8 (SWP)
(Type UX)
Dim
Min
Max
Typ
A
A1
b
b2
b4
c
0.90
0
0.30
0.20
1.10 1.00
0.05
—
0.50 0.41
0.35 0.25
0.25REF
E1
E
A1
S
e
a
t
ing
P
l
ane
1.400
1.900
c
0.230 0.330 0.277
5.15 BSC
D
e
D1
D2
D2a
E
4.70
3.56
3.78
5.10 4.90
3.96 3.76
4.18 3.98
1
6.40 BSC
Ø1.000 Depth 0.07
±
0
.030
e
/
2
E1
E2
5.60
3.46
6.00 5.80
3.86 3.66
D
E
T
A
IL A
b( 8x)
L
E2a
4.195 4.595 4.395
e
k
1
1.27BSC
—
1.05
—
k
L
0.635 0.835 0.735
0.635 0.835 0.735
0.200 0.400 0.300
0.050REF
0.025 0.225 0.125
3.205 4.005 3.605
D2a
D2
La
L1
L1a
L4
M
A
L4
M
E2
θ
θ1
10°
6°
12°
8°
11°
7°
D
E
T
A
IL A
La
All Dimensions in mm
L1
b4( 8x)
7 of 9
August 2022
© 2022 Copyright Diodes Incorporated. All Rights Reserved.
DMT3004LPS
Document number: DS37045 Rev. 5 – 2
DMT3004LPS
Suggested Pad Layout
Site1:
PowerDI5060-8
X4
Dimensions
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
Y2
C
G
G1
X
X3
Y3
Y1
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
X2
Y5
Y4
X1
Y7
G1
C
Y6
Y(
4
x)
X
G
Site2:
PowerDI5060-8 (SWP) (Type UX)
X2
Value
Dimensions
(in mm)
1.270
0.660
0.820
0.610
4.100
4.420
1.270
1.020
3.810
6.610
C
G
G1
X
X1
X2
Y
Y1
Y2
Y3
Y1
Y2
Y3
X1
G1
X (
8x)
C
Y
G
8 of 9
August 2022
© 2022 Copyright Diodes Incorporated. All Rights Reserved.
DMT3004LPS
Document number: DS37045 Rev. 5 – 2
DMT3004LPS
IMPORTANT NOTICE
DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH
1.
REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF
MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY
RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
2.
The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes
’ products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any
product described herein. This document is intended for skilled and technically trained engineering customers and users who desig
n with Diodes’
products. Diodes’ products may be used to facilitate safety
-related applications; however, in all instances customers and users are responsible for
(a) selecting the appropriate Diodes products for their applications, (b) evaluating the suit
ability of Diodes’ products for their intended applications,
(c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements
as well as safety and
functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control
techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their
applications.
3.
Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes
from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such
use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against al
l damages and
liabilities.
4.
Products described herein may be covered by one or more United States, international or foreign patents and pending patent
applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks
and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties
(including third parties whose products and services may be described in this document or on Diodes’ website) under this docu
ment.
5.
Diodes’
products
are
provided
subject
to
Diodes’
Standard
Terms
and
Conditions
of
Sale
(
https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/
)
or other applicable terms. This document does not
alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any
products purchased through unauthorized sales channel.
6.
Diodes’ products and tec
hnology may not be used for or incorporated into any products or systems whose manufacture, use or sale is
prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contravention of any
applicable laws or
regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or
penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless
against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with
the applicable laws and regulations, as well as any unintended or unauthorized application.
7.
While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain
technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and
Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make
modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described
herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document
is the final and determinative format released by Diodes.
8.
Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is
prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such
unauthorized use.
9. This Notice may be periodically updated with the most recent version available at
https://www.diodes.com/about/company/terms-and-
DIODES is a trademark of Diodes Incorporated in the United States and other countries.
The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries.
© 2022 Diodes Incorporated. All Rights Reserved.
9 of 9
August 2022
© 2022 Copyright Diodes Incorporated. All Rights Reserved.
DMT3004LPS
Document number: DS37045 Rev. 5 – 2
