Diodes-Incorporated-DMT3006LDV-7
| Part # | Diodes-Incorporated-DMT3006LDV-7 |
Download  | Diodes-Incorporated-DMT3006LDV-7 |
DMT3006LDV
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8 (Type UXC)
Product Summary
Features
Low On-Resistance
I
D
Max
BV
DSS
R
DS(ON)
Max
T
C
= +25°C
Low Input Capacitance
Fast Switching Speed
25A
20A
10m
Ω
@ V
GS
= 10V
14m
Ω
@ V
GS
= 4.5V
30V
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Description
Mechanical Data
®
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) yet maintain superior switching performance,
which makes it ideal for high-efficiency power management
applications.
Case: PowerDI
3333-8 (Type UXC)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
—
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Applications
Power Management Functions
Analog Switch
Weight: 0.072 grams (Approximate)
PowerDI3333-8 (Type UXC)
D1
D
S
D
S
D1
D2
D2
G
G
S1
G1
S2
G2
PIN1
Bottom View
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
DMT3006LDV-7
DMT3006LDV-13
Case
Packaging
2000/Tape & Reel
3000/Tape & Reel
PowerDI3333-8 (Type UXC)
PowerDI3333-8 (Type UXC)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3.Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlori
ne (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
SV6 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 18 for 2018)
WW = Week Code (01 to 53)
SV6
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
May 2018
© Diodes Incorporated
DMT3006LDV
Document number: DS39726
Rev. 5 – 2
DMT3006LDV
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Unit
V
Gate-Source Voltage
±20
V
V
GSS
Steady
State
T
C
= +25°C
T
C
= +70°C
25
20
A
Continuous Drain Current, V
GS
= 10V (Note 7)
I
D
Maximum Body Diode Forward Current (Note 7)
25
90
90
34
58
A
A
I
S
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
I
DM
I
SM
I
AS
E
AS
Pulsed Body Diode Forward Current (10
μ
s Pulse, Duty Cycle = 1%)
Avalanche Current (L = 0.1mH) (Note 8)
A
A
Avalanche Energy (L = 0.1mH) (Note 8)
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
0.9
134
78
1.8
70
W
P
D
R
ϴ
JA
P
D
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
t<10s
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
R
ϴ
JA
41
°C/W
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
14
R
ϴ
JC
-55 to +150
°C
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 9)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
30
—
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
V
DS
= 24V, V
GS
= 0V
V
GS
= +20V, V
DS
= 0V
V
GS
= -16V, V
DS
= 0V
—
1
μ
A
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
—
—
±100
nA
I
GSS
ON CHARACTERISTICS
(Note 9)
Gate Threshold Voltage
1.0
—
—
3.0
10
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 9.0A
V
GS
= 4.5V, I
D
= 8.5A
V
GS
= 0V, I
S
= 1A
7.6
Static Drain-Source On-Resistance
10.0
0.70
14
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 10)
Input Capacitance
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1,155
456
72
—
—
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
G
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
1.6
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
8.4
16.7
2.2
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
G
Q
G
nC
ns
V
DD
= 15V, I
D
= 9A
Q
GS
Q
GD
t
D(ON)
t
R
3.5
Gate-Drain Charge
Turn-On Delay Time
3.5
5.5
Turn-On Rise Time
V
DD
= 15V, V
GS
= 10V,
R
G
= 3
Ω
, I
D
= 9A
13.5
4.6
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
19.3
8.6
ns
t
RR
I
F
= 1.5A, di/dt = 100A/
μ
s
nC
Q
RR
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
2 of 7
May 2018
© Diodes Incorporated
DMT3006LDV
Document number: DS39726
Rev. 5 – 2
DMT3006LDV
50
45
40
35
30
25
20
15
10
30
25
20
15
10
5
V
= 10V
= 4V
GS
V
= 5
.
0
V
DS
V
= 3
.
5
V
GS
V
GS
V
= 4
.
5
V
GS
V
= 5V
V
= 3V
GS
GS
T
J
= 150°C
T
= 25°C
J
T
= 125°C
= 85°C
J
T
= -55°C
J
V
= 2
.
7
V
GS
T
J
V
= 2
.
5
V
GS
5
0
V
= 2
.
2
V
GS
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
2
3
4
5
6
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 1
T
y
pical Output Characteristic
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 2
T
y
pical Transfer Characteristics
0.012
0.010
0.008
0.006
0.004
0.002
0.000
0.2
0.18
0.16
0.14
0.12
0.1
V
= 4
.
5
V
= 10V
GS
GS
I
= 20A
D
V
0.08
0.06
0.04
I
= 10A
D
0.02
0
2
4
6
8
10 12 14 16 18 20
0
5
10
15
20
25
30
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 4
T
y
pical Drain-Source On-Resistance
vs. Gate-Source Voltage
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
Drain Current and Gate Voltage
0.012
0.01
0.008
0.006
0.004
0.002
0
2
V
= 10V
GS
T =
150°C
J
T
= 125°C
J
1.8
T
= 85°C
1.6
1.4
1.2
1
J
V
= 4
.
5
V
= 10A
GS
I
D
T
= 25°C
J
T
= -55°C
J
V
= 10V
GS
= 20A
I
D
0.8
0.6
0.4
0
5
10
15
20
–
5
0
–
2
5
0
25
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with
T
e
m
p
e
r
a
ture
50
75 100 125 150
I
D
, DRAIN CURRENT (A)
Figure 5
T
y
pical On-Resistance vs.
Drain Current and
T
e
m
p
e
r
a
ture
3 of 7
May 2018
© Diodes Incorporated
DMT3006LDV
Document number: DS39726
Rev. 5 – 2
DMT3006LDV
0.02
0.015
0.01
2.5
2
V
= 4
.
5
V
= 10A
GS
I
D
I
= 1mA
D
1.5
1
I
= 250µA
D
V
= 10V
= 20A
GS
I
D
0.005
0.5
0
0
–
5
0
–
2
5
0
25
50
75 100 125 150
–
5
0
–
2
5
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
T , JUNCTION TEMPERATURE (°C)
J
Figure 8 Gate Threshold Variation vs. Junction Temperature
10000
30
25
20
f = 1MHz
C
iss
1000
100
10
C
oss
T
= 150°C
J
T
= 25°C
J
15
10
5
T
= 125°C
= 85°C
J
C
rss
T
= -55°C
J
T
J
1
0
0
0.3
0.6
0.9
1.2
0
5
10
15
20
25
30
V
SD
, SOURCE-DRAIN VOL
T
AGE
(
V)
Figure 9 Diode Forward Voltage vs. Current
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
100
R
D
S
(
on)
Limi
t
e
d
P
= 100µs
W
8
6
4
2
0
10
DC
P
= 10s
W
1
P
= 1s
W
P
= 100ms
W
V
DS
= 15V, I
D
= 12A
P
= 10ms
W
T
J
(max)
= 150°C
T
C
= 25°C
P
= 1ms
W
0.1
V
GS
= 10V
Single Pul
s
e
DUT on 1 * MRP Board
0.01
0.01
0.1
1
10
100
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 12 SOA, Safe Operation Area
Q
g
(nC)
Figure 11. Gate Charge
4 of 7
May 2018
© Diodes Incorporated
DMT3006LDV
Document number: DS39726
Rev. 5 – 2
DMT3006LDV
1
D = 0
.
9
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
0
5
D = 0
.
0
2
D = 0
.
0
1
D = 0
.
0
05
0.01
R
JA
(t) = r(t) *
R
JA
R
JA
= 122°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
5 of 7
May 2018
© Diodes Incorporated
DMT3006LDV
Document number: DS39726
Rev. 5 – 2
DMT3006LDV
Package Outline Dimensions
PowerDI3333-8 (Type UXC)
D
D1
A
A1
PowerDI3333-8
(Type UXC)
Dim Min
Max Typ
0.75 0.85 0.80
A1
0.00 0.05
A
E1 E
—
b
c
D
0.25 0.40 0.32
0.10 0.25 0.15
3.20 3.40 3.30
D1
2.95 3.15 3.05
D2
0.90 1.30 1.10
c
E
3.20 3.40 3.30
E1
2.95 3.15 3.05
E2
1.60 2.00 1.80
E3
0.95 1.35 1.15
E4
0.10 0.30 0.20
L
E3
k
E4
E2
e
L
k
—
—
0.65
0.30 0.50 0.40
0.50 0.90 0.70
k1
0.13 0.53 0.33
0° 12°
10°
D2
k1
a
All Dimensions in mm
L
b
e
Suggested Pad Layout
PowerDI3333-8 (Type UXC)
X3
X2
Dimensions Value
(in mm)
C
G
G1
X
X1
X2
X3
Y
Y1
Y2
Y3
0.650
0.230
0.600
0.420
1.200
2.370
2.630
0.600
1.900
2.400
3.600
Y2
G1
X1
Y1
Y
Y3
G
X
C
6 of 7
May 2018
© Diodes Incorporated
DMT3006LDV
Document number: DS39726
Rev. 5 – 2
DMT3006LDV
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
7 of 7
May 2018
© Diodes Incorporated
DMT3006LDV
Document number: DS39726
Rev. 5 – 2
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
