Diodes-Incorporated-DMT3006LFG-7
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DMT3006LFG
Green
N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8
Product Summary
Features and Benefits
Low R
DS(ON)
–
Ensures On-State Losses are Minimized
Excellent Q
GD
× R
DS(ON)
Product (FOM)
I
D
Max
BV
DSS
R
DS(ON)
Max
T
C
= +25°C
Advanced Technology for DC-DC Converters
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
6m
Ω @ V
GS
= 10V
10m
Ω @ V
GS
= 4.5V
30V
55.6A
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
100% UIS (Avalanche) Rated
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Description and Applications
®
Case: PowerDI
3333-8
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminal Finish
–
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
Backlighting
Power Management Functions
DC-DC Converters
PowerDI3333-8
D
Pin 1
S
S
8
7
6
5
1
2
3
4
S
G
G
D
D
D
S
D
Equivalent Circuit
Top View
Top View
Bottom View
Ordering Information
(Note 4)
Part Number
DMT3006LFG-7
DMT3006LFG-13
Case
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
PowerDI3333-8
PowerDI3333-8
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4.
For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/
.
Marking Information
SK1 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 18 = 2018)
WW = Week Code (01 to 53)
SK1
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
September 2018
© Diodes Incorporated
DMT3006LFG
Document number: DS38252 Rev. 5 – 2
DMT3006LFG
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Unit
V
Gate-Source Voltage
±
20
V
V
GSS
T
C
= +25°C
55.6
44.4
A
A
Continuous Drain Current (Note 6) V
GS
= 10V
Continuous Drain Current (Note 5) V
GS
= 10V
I
D
I
D
T
C
= +70°C
T
A
= +25°C
T
A
= +70°C
16.0
12.8
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.1mH
2
A
A
I
S
80
25
31
I
DM
I
AS
E
AS
A
Avalanche Energy, L=0.1mH
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
Value
27.8
Unit
W
Total Power Dissipation (Note 6)
T
C
= +25°C
Thermal Resistance, Junction to Case (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
4.5
R
θ
JC
°C/W
°C
54
R
θ
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
30
—
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μA
—
1
μ
A
V
DS
= 24V, V
GS
= 0V
V
GS
= +20V, V
DS
= 0V
V
GS
= -16V, V
DS
= 0V
Gate-Source Leakage
—
—
±100
nA
I
GSS
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
1.0
—
—
—
—
3.0
6
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 12A
V
GS
= 4.5V, I
D
= 12A
V
GS
= 0V, I
S
= 2A
4.8
6.9
0.7
Static Drain-Source On-Resistance
10
1.0
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1,155
456
72
C
iss
C
oss
C
rss
R
G
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
1.6
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
8.4
16.7
2.2
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
G
Q
G
nC
ns
V
DD
= 15V, I
D
= 9A
Q
GS
Q
GD
t
D(ON)
t
R
3.5
Gate-Drain Charge
Turn-On Delay Time
3.5
5.5
Turn-On Rise Time
V
DD
= 15V, V
GS
= 10V,
R
G
= 3
Ω
, I
D
= 9A
13.5
4.6
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
19.3
8.6
ns
t
RR
I
F
= 1.5A, di/dt = 100A/
μ
s
nC
Q
RR
Notes:
5. R
is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. R
is guaranteed by design
JC
JA
while R
is determined by the user’s board design.
JA
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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September 2018
© Diodes Incorporated
DMT3006LFG
Document number: DS38252 Rev. 5 – 2
DMT3006LFG
30.0
25.0
20.0
15.0
10.0
5.0
20
15
10
5
V
GS
= 3.5V
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
=5.0V
V
DS
= 5V
V
GS
= 3.0V
125
℃
85
℃
25
℃
150
℃
V
GS
= 2.5V
-55
℃
0.0
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE-SOURCE VOLTAGE
(V)
Figure 2. Typical Transfer Characteristic
V
DS
, DRAIN-SOURCE VOLTAGE
(V)
Figure 1. Typical Output Characteristic
0.020
0.01
0.008
0.006
0.004
0.002
0
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
V
GS
= 4.5V
V
GS
= 10V
I
D
= 12A
2
4
6
8
10
12
14
16
18
20
0
5
10
15
20
25
30
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.01
0.008
0.006
0.004
0.002
0
2
1.6
1.2
0.8
0.4
V
GS
= 10V
150
℃
V
GS
= 4.5V, I
D
= 12A
125
℃
85
℃
25
℃
-55
℃
V
GS
= 10V, I
D
= 12A
-50
-25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
0
25
50
75
100 125 150
0
5
10
15
20
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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September 2018
© Diodes Incorporated
DMT3006LFG
Document number: DS38252 Rev. 5 – 2
DMT3006LFG
0.014
0.012
0.01
2.4
2.2
2
1.8
1.6
1.4
1.2
1
V
GS
= 4.5V, I
D
= 12A
I
D
= 1mA
0.008
0.006
0.004
0.002
0
I
D
= 250
μ
A
V
GS
= 10V, I
D
= 12A
0.8
0.6
0.4
-50
-25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
0
25
50
75
100 125 150
-50 -25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
1000
100
10
30
25
20
15
10
5
f=1MHz
V
GS
= 0V
C
iss
C
oss
C
rss
T
A
= 85
o
C
T
A
= 125
o
C
T
A
= 25
o
C
T
A
= 150
o
C
T
A
= -55
o
C
1
0
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
Figure 9. Diode Forward Voltage vs. Current
10
8
100
10
P
W
=100µs
R
DS(ON)
Limited
6
1
P
W
=1ms
P
W
=10ms
P
W
=100ms
P
W
=1s
4
V
DS
= 15V, I
D
= 12A
T
J(Max)
= 150
℃
T
C
= 25
℃
0.1
0.01
2
P
W
=10s
Single Pulse
DUT on 1*MRP Board
V
GS
= 10V
DC
10
0
0
5
10
15
20
25
0.01
0.1
1
100
Q
g
(nC)
Figure 11. Gate Charge
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
4 of 7
September 2018
© Diodes Incorporated
DMT3006LFG
Document number: DS38252 Rev. 5 – 2
DMT3006LFG
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
Rthja(t)=r(t) * Rthja
D=Single Pulse
Rthja=112
℃
/W
Duty Cycle, D=t1 /
t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME
(sec)
Figure 13. Transient Thermal Resistance
5 of 7
September 2018
© Diodes Incorporated
DMT3006LFG
Document number: DS38252 Rev. 5 – 2
DMT3006LFG
Package Outline Dimensions
PowerDI3333-8
A3
A1
A
Seating Plane
PowerDI3333-8
Dim Min
Max Typ
0.75 0.85 0.80
A1
0.00 0.05 0.02
A
D
L( 4x)
E4
A3
b
0.203
0.27 0.37 0.32
D2
1
b2
0.15 0.25 0.20
3.25 3.35 3.30
D2
2.22 2.32 2.27
3.25 3.35 3.30
D
Pin #1 ID
b2( 4x)
E
E2
1.56 1.66 1.61
E3
0.79 0.89 0.84
E4
1.60 1.70 1.65
E
E3
E2
e
L
0.65
0.35 0.45 0.40
L1
z
0.39
0.515
L1( 3x)
8
z( 4x)
All Dimensions in mm
b
e
Suggested Pad Layout
PowerDI3333-8
X3
X2
8
Y4
Dimensions Value
(in mm)
C
X
0.650
0.420
0.420
0.230
2.370
0.700
1.850
2.250
3.700
0.540
X1
Y1
Y2
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y
1
X
C
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September 2018
© Diodes Incorporated
DMT3006LFG
Document number: DS38252 Rev. 5 – 2
DMT3006LFG
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
7 of 7
September 2018
© Diodes Incorporated
DMT3006LFG
Document number: DS38252 Rev. 5 – 2
