Diodes-Incorporated-DMT3020LDV-7
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DMT3020LDV
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8 (Type UXC)
Product Summary
Features
Low On-Resistance
I
D
Max
BV
DSS
R
DS(ON)
Max
Low Input Capacitance
T
C
= +25°C
Fast Switching Speed
20m
Ω
@ V
GS
= 10V
32m
Ω
@ V
GS
= 4.5V
32A
25A
Low Input/Output Leakage
30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Description
Mechanical Data
®
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
), yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Case: PowerDI
3333-8 (Type UXC)
Case
Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
—
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Applications
Power Management Functions
Analog Switch
Weight: 0.072 grams (Approximate)
PowerDI3333-8 (Type UXC)
D1
D1
D1
D2
D2
G1
S1
G1
S2
G2
Pin 1
S1
Top View
Bottom View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMT3020LDV-7
DMT3020LDV-13
Case
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
PowerDI3333-8 (Type UXC)
PowerDI3333-8 (Type UXC)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-free “G
reen” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
AR5 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 18 for 2018)
WW = Week Code (01 to 53)
AR5
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
May 2018
© Diodes Incorporated
DMT3020LDV
Document number: DS40662
Rev. 2 – 2
DMT3020LDV
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Unit
V
Gate-Source Voltage
±20
V
V
GSS
Steady
State
T
C
= +25°C
T
C
= +70°C
32
25
A
Continuous Drain Current, V
GS
= 10V (Note 7)
I
D
Maximum Body Diode Forward Current (Note 7)
25
50
50
13
8.5
A
A
I
S
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
I
DM
I
SM
I
AS
E
AS
Pulsed Drain Body Diode Forward Current (10
μ
s Pulse, Duty Cycle = 1%)
Avalanche Current (L = 0.1mH) (Note 8)
A
A
Avalanche Energy (L = 0.1mH) (Note 8)
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
R
Value
Unit
W
Total Power Dissipation (Note 5)
0.9
138
1.9
67
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
JA
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
R
JA
°C/W
4.8
R
JC
-55 to +150
°C
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
30.0
—
—
1.0
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μA
V
DS
= 24V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
μ
A
nA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
—
±100
I
GSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
1.0
—
—
14
22
8.0
2.5
20
V
mΩ
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 9.0A
V
GS
= 4.5V, I
D
= 7.0A
V
GS
= 0V, I
S
= 2A
Static Drain-Source On-Resistance
32
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
393
173
27
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1.1
7.0
3.6
0.9
1.5
1.8
1.9
7.5
2.4
10
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Q
g
Q
g
V
DD
= 15V, I
D
= 9A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 15V, V
GS
= 10V,
R
G
= 6
Ω
, I
D
= 9A
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
t
RR
I
F
= 9A, dI/dt = 100A/
μ
s
2.6
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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May 2018
© Diodes Incorporated
DMT3020LDV
Document number: DS40662
Rev. 2 – 2
DMT3020LDV
30.0
25.0
20.0
15.0
10.0
5.0
15
12
9
V
GS
= 4.5V
V
DS
= 5V
V
GS
= 4.0V
V
GS
= 3.5V
V
GS
= 10V
6
V
GS
= 3.0V
T
J
= 85
℃
T
J
= 25
℃
3
T
J
= 150
℃
V
GS
= 2.5V
2.5 3
T
J
= 125
℃
T
J
= -55
℃
0.0
0
0
0.5
1
1.5
2
1
1.5
2
2.5
3
3.5
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
0.1
0.08
0.06
0.04
0.02
0
0.03
0.025
0.02
0.015
0.01
0.005
0
V
GS
= 4.5V
I
D
= 9.0A
V
GS
= 10V
I
D
= 7.0A
0
2
4
6
8
10 12 14 16 18 20
0
4
8
12
16
20
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
1.8
1.6
1.4
1.2
1
0.026
0.024
0.022
0.02
V
GS
= 10V
V
GS
= 10V, I
D
= 9.0A
T
J
= 150
℃
T
J
= 125
℃
T
J
= 85
℃
0.018
0.016
0.014
0.012
0.01
T
J
= 25
℃
T
J
= -55
℃
V
GS
= 4.5V, I
D
= 7.0A
0.8
0.6
0.008
0.006
0
2
4
6
8
10 12 14 16 18 20
-50 -25
0
25
50
75 100
125 150
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 5. Typical On-Resistance vs. Drain Current
and Junction Temperature
Figure 6. On-Resistance Variation with Junction
Temperature
3 of 7
May 2018
© Diodes Incorporated
DMT3020LDV
Document number: DS40662
Rev. 2 – 2
DMT3020LDV
2
1.8
1.6
1.4
1.2
1
0.04
0.03
0.02
0.01
0
I
D
= 1mA
V
GS
= 4.5V, I
D
= 7.0A
I
D
= 250
μ
A
V
GS
= 10V, I
D
= 9.0A
0.8
0.6
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Junction
Temperature
Figure 8. Gate Threshold Variation vs. Junction
Temperature
20
18
16
14
12
10
8
10000
V
GS
= 0V
f = 1MHz
1000
100
10
C
iss
C
oss
C
rss
6
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= 150
o
C
4
T
J
= 125
o
C
2
T
J
= -55
o
C
1
0
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
8
100
P
W
= 10ms
P
W
= 1ms
R
DS(ON)
Limited
P
W
= 100µs
10
1
6
4
P
W
= 100ms
T
J(Max)
= 150
℃
T
C
= 25
℃
0.1
0.01
P
W
= 1s
P
W
= 10s
DC
V
DS
= 15V, I
D
= 9.0A
2
Single Pulse
DUT on 1*MRP
Board
V
GS
= 10V
0
0
2
4
6
8
10
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
g
(nC)
Figure 11. Gate Charge
Figure 12. SOA, Safe Operation Area
4 of 7
May 2018
© Diodes Incorporated
DMT3020LDV
Document number: DS40662
Rev. 2 – 2
DMT3020LDV
1
D=0.7
D=0.5
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 138
℃
/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
1E-06 1E-05
0.0001 0.001
0.01
0.1
1
10
100
1000 10000
10000
0
1
000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
May 2018
© Diodes Incorporated
DMT3020LDV
Document number: DS40662
Rev. 2 – 2
DMT3020LDV
Package Outline Dimensions
PowerDI3333-8 (Type UXC)
D
D1
A
A1
PowerDI3333-8
(Type UXC)
Dim Min
Max Typ
0.75 0.85 0.80
A1
0.00 0.05
—
A
b
c
D
0.25 0.40 0.32
0.10 0.25 0.15
3.20 3.40 3.30
E1 E
D1
2.95 3.15 3.05
D2
0.90 1.30 1.10
E
3.20 3.40 3.30
E1
2.95 3.15 3.05
E2
1.60 2.00 1.80
E3
0.95 1.35 1.15
E4
0.10 0.30 0.20
c
L
e
L
k
0.65
0.30 0.50 0.40
0.50 0.90 0.70
E3
k
E4
E2
k1
0.13 0.53 0.33
a
All Dimensions in mm
0
°
12
°
10
°
D2
k1
L
b
e
Suggested Pad Layout
PowerDI3333-8 (Type UXC)
X3
X2
Dimensions Value
(in mm)
C
G
G1
X
X1
X2
X3
Y
Y1
Y2
Y3
0.650
0.230
0.600
0.420
1.200
2.370
2.630
0.600
1.900
2.400
3.600
Y2
G1
X1
Y1
Y
Y3
G
X
C
6 of 7
May 2018
© Diodes Incorporated
DMT3020LDV
Document number: DS40662
Rev. 2 – 2
DMT3020LDV
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
7 of 7
May 2018
© Diodes Incorporated
DMT3020LDV
Document number: DS40662
Rev. 2 – 2
Mouser Electronics
Authorized Distributor
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