Diodes-Incorporated-DMT3020LSD-13
| Part # | Diodes-Incorporated-DMT3020LSD-13 |
Download  | Diodes-Incorporated-DMT3020LSD-13 |
DMT3020LSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Dual N-Channel MOSFET
I
D
BV
DSS
R
DS(ON) Max
T
A
= +25°C
Low On-Resistance
Low Gate Threshold Voltage
20m
@ V
GS
= 10V
32m
@ V
GS
= 4.5V
16A
13A
30V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Description
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
This new generation MOSFET has been designed to minimize the
on-state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” M
olding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity:
Level 1 per J-STD-020
Terminals Connections Indicator: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Lead
Applications
Backlighting
Power Management Functions
DC-DC Converters
e3
Frame. Solderable
per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
D2
SO-8
D1
G1
G2
S
S2
Top View
Internal Schematic
N-Channel MOSFET
N-Channel MOSFET
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMT3020LSD-13
SO-8
2500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
8
5
= Manufacturer’s Marking
T3020LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY= Year (ex: 18 = 2018)
WW = Week (01 to 53)
T3020LD
YY
WW
1
4
1 of 7
March 2018
© Diodes Incorporated
DMT3020LSD
Document number: DS40661 Rev. 2 – 2
DMT3020LSD
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
C
= +25°C
T
C
= +70°C
Steady
State
16
13
A
Continuous Drain Current, V
GS
= 10V (Note 7)
I
D
Maximum Body Diode Forward Current (Note 7)
8
A
A
I
S
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
50
50
13
8.5
I
DM
I
SM
I
AS
E
AS
Pulsed Drain Body Diode Forward Current (10
μ
s Pulse, Duty Cycle = 1%)
Avalanche Current (L = 0.1mH) (Note 8)
A
A
Avalanche Energy (L = 0.1mH) (Note 8)
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
R
Value
Unit
W
Total Power Dissipation (Note 5)
1.0
117
1.5
81
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
JA
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
R
JA
°C/W
20
R
JC
-55 to +150
°C
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
30.0
—
—
1.0
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μA
V
DS
= 24V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
A
nA
—
±100
I
GSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
1.0
—
—
—
—
—
2.5
20
V
mΩ
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 9.0A
V
GS
= 4.5V, I
D
= 7.0A
V
GS
= 0V, I
S
= 2A
Static Drain-Source On-Resistance
32
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
393
173
27
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1.1
7.0
3.6
0.9
1.5
1.8
1.9
7.5
2.4
10
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Q
g
Q
g
V
DD
= 15V, I
D
= 9A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 15V, V
GS
= 10V,
R
G
= 6
Ω
, I
D
= 9A
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
t
RR
I
F
= 9A, dI/dt = 100A/
μ
s
2.6
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. I
and E
ratings are based on low frequency and duty cycles to keep T
= +25°C.
AS AS
J
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
2 of 7
March 2018
© Diodes Incorporated
DMT3020LSD
Document number: DS40661 Rev. 2 – 2
DMT3020LSD
20
18
16
14
12
10
8
30.0
25.0
20.0
15.0
10.0
5.0
V
DS
= 5V
V
GS
= 4.0V
V
GS
= 10.0V
V
GS
= 4.5V
V
GS
= 3.5V
V
GS
= 3.0V
6
T
J
= 150
℃
T
J
= 125
℃
4
T
J
= 25
℃
T
J
=-55
℃
T
J
= 85
℃
V
GS
= 2.5V
2.5
2
0
0.0
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
3
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1.Typical Output Characteristic
0.1
0.08
0.06
0.04
0.02
0
0.03
0.025
0.02
0.015
0.01
0.005
0
V
GS
= 4.5V
V
GS
= 10V
I
D
= 7.0A
I
D
= 9.0A
0
4
8
12
16
20
0
2
4
6
8
10 12 14 16 18 20
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
1.8
0.026
0.024
0.022
0.02
V
GS
=10V
T
J
= 150
℃
V
GS
= 10V, I
D
= 9.0A
1.6
1.4
1.2
1
T
J
= 125
℃
T
J
= 85
℃
0.018
0.016
0.014
0.012
0.01
V
GS
= 4.5V, I
D
= 7.0A
T
J
= 25
℃
T
J
= -55
℃
0.8
0.6
0.008
0.006
-50 -25
0
25
50
75 100
125 150
0
2
4
6
8
10 12 14 16 18 20
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 6. On-Resistance Variation with
Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
3 of 7
March 2018
© Diodes Incorporated
DMT3020LSD
Document number: DS40661 Rev. 2 – 2
DMT3020LSD
0.04
0.03
0.02
0.01
0
2
1.8
1.6
1.4
1.2
1
V
GS
= 4.5V, I
D
= 7.0A
I
D
= 1mA
I
D
= 250
μ
A
V
GS
= 10V, I
D
= 9.0A
0.8
0.6
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs.
JunctionTemperature
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
10000
1000
100
10
20
18
16
14
12
10
8
f=1MHz
V
GS
= 0V
C
iss
C
oss
T
J
= 85
℃
6
T
J
= 150
℃
C
rss
T
J
= 25
℃
4
T
J
= 125
℃
2
T
J
= -55
℃
1
0
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
100
10
8
R
DS(ON)
LIMITED
P
W
=1ms
P
W
=100µs
10
1
6
P
W
=10ms
P
W
=100ms
4
V
DS
= 15V, I
D
= 9A
T
J(MAX)
=150
℃
T
C
=25
℃
Single Pulse
DUT on 1*MRP
board
P
W
=1s
0.1
0.01
2
P
W
=10s
DC
V
GS
=10V
0
0.1
1
10
100
0
2
4
6
8
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Qg (nC)
Figure 11. Gate Charge
Figure 12. SOA, Safe Operation Area
4 of 7
March 2018
© Diodes Incorporated
DMT3020LSD
Document number: DS40661 Rev. 2 – 2
DMT3020LSD
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 117
℃
/W
Duty Cycle, D = t1 / t2
0.001
0.000001 0.00001
0.0001 0.001
0.01
0.1
1
10
100
1000
10000 100000
1000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
March 2018
© Diodes Incorporated
DMT3020LSD
Document number: DS40661 Rev. 2 – 2
DMT3020LSD
Package Outline Dimensions
SO-8
SO-8
Dim
A
A1
b
c
D
Min
1.40
0.10
0.30
0.15
4.85
5.90
3.80
3.85
—
Max
1.50
0.20
0.50
0.25
4.95
6.10
3.90
3.95
—
Typ
1.45
0.15
0.40
0.20
4.90
6.00
3.85
3.90
1.27
0.35
0.72
0.65
E
1
E
b
E1
E0
e
h
L
E1
h
)
Q
sides
All
–
—
0.82
0.70
(
7°
9°
c
0.62
0.60
Q
4°± 3°
A
All Dimensions in mm
Gauge Plane
Seating Plane
L
A1
e
E0
D
Suggested Pad Layout
SO-8
X1
Dimensions Value
(in mm)
C
X
X1
Y
1.27
0.802
4.612
1.505
6.50
Y1
Y1
Y
C
X
6 of 7
March 2018
© Diodes Incorporated
DMT3020LSD
Document number: DS40661 Rev. 2 – 2
DMT3020LSD
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
7 of 7
March 2018
© Diodes Incorporated
DMT3020LSD
Document number: DS40661 Rev. 2 – 2
