Diodes-Incorporated-DMT3020UFDB-13
| Part # | Diodes-Incorporated-DMT3020UFDB-13 |
Download  | Diodes-Incorporated-DMT3020UFDB-13 |
DMT3020UFDB
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
0.6mm Profile
–
Ideal for Low Profile Applications
Low Gate Threshold Voltage
I
D
Max
T
A
= +25°C
BV
DSS
R
DS(ON)
Max
Low On-Resistance
6.5A
5.4A
21
mΩ @ V
GS
= 10V
30
mΩ @ V
GS
= 4.5V
ESD Protected Gate
30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable,
and manufactured in IATF 16949 certified facilities), please
contact us
or your local Diodes representative.
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) yet maintain superior switching performance,
making it ideal for high-efficiency power-management applications.
Mechanical Data
Applications
Package: U-DFN2020-6
General-purpose interfacing switches
Power-management functions
Package
Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe.
Solderable
e4
per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
D2
S2
D1
S1
U-DFN2020-6 (Type B)
S2
G2
D2
D1
G2
G1
D1
D2
ESD PROTECTED
G1
Gate Protection
Diode
S1
Gate Protection
Diode
Pin1
Bottom View
Internal Schematic
Ordering Information
(Note 4)
Packing
Part Number
Package
Qty.
3,000
10,000
Carrier
Tape & Reel
Tape & Reel
DMT3020UFDB
-7
DMT3020UFDB
-13
U-DFN2020-6 (Type B)
U-DFN2020-6 (Type B)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined
as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
1 of 8
July 2023
DMT3020UFDB
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS39155 Rev. 6 – 2
DMT3020UFDB
Marking Information
Site 1
RA = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: K = 2023)
RA
M = Month (ex: 9 = September)
Date Code Key
Year
2016
…
2023
2024
2025
2026
2027
2028
2029
2030
2031
2032
Code
D
…
K
L
M
N
P
R
S
T
U
V
Aug
Sep
Oct
Nov
Dec
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
1
2
3
4
5
6
7
8
9
O
N
D
Site 2
RA = Product Type Marking Code
YWX = Date Code Marking
Y = Year (ex: 3 = 2023)
R
A
W = Week (ex: a = Week 27; z Represents Week 52 and 53)
X = Internal Code (ex: U = Monday)
Date Code Key
Year
2016
…
2023
2024
2025
2026
2027
2028
2029
2030
2031
2032
Code
6
…
3
4
5
6
7
8
9
0
1
2
Week
Code
1-26
27-52
53
A-Z
a-z
z
Internal Code
Code
Sun
Mon
Tue
Wed
Thu
Fri
Sat
T
U
V
W
X
Y
Z
2 of 8
July 2023
DMT3020UFDB
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS39155 Rev. 6 – 2
DMT3020UFDB
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Unit
V
Gate-Source Voltage
±12
6.5
5.2
1.7
35
V
V
GSS
T
A
= +25°C
Steady
State
A
Continuous Drain Current (Note 6) V
GS
= 10V
I
D
T
A
= +70
C
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (380
μ
s Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
A
A
I
S
I
DM
I
AS
E
AS
13
A
8
Avalanche Energy
(Note 7) L = 0.1mH
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
Unit
W
0.86
145
1.3
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
JA
P
D
Thermal Resistance, Junction to Ambient (Note 6)
95
°C/W
R
JA
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
15.8
°C/W
°C
R
JC
T
J,
T
STG
-55 to +150
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
—
1.0
±10
30
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
μA
μA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
V
DS
= 24V, V
GS
= 0V
I
GSS
V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
0.4
—
—
—
—
19
24
0.8
1.7
21
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 6.0A
V
GS
= 4.5V, I
D
= 5.0A
V
GS
= 0V, I
S
= 2A
Static Drain-Source On-Resistance
30
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
383
186
41
1.5
8.8
4.6
2.1
1.6
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Q
g
Q
g
V
DS
= 15V, I
D
= 6A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
6
1
Turn-On Rise Time
V
DD
= 15V, V
GS
= 10V,
R
g
= 6
Ω
, I
D
= 9A
Turn-Off Delay Time
t
D(OFF)
t
F
11
4
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C
.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
3 of 8
July 2023
DMT3020UFDB
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS39155 Rev. 6 – 2
DMT3020UFDB
20.0
15.0
10.0
5.0
15
12
9
V
DS
= 5V
V
GS
= 10.0V
V
GS
= 6.0V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.5V
V
GS
= 3.0V
6
T
J
= 150
℃
3
T
J
= 85
℃
T
J
= 25
℃
T
J
= -55
℃
V
GS
= 2.5V
2.5
T
J
= 125
℃
0.0
0
0
0.5
1
1.5
2
3
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.2
0.19
0.18
0.17
0.16
0.15
0.14
0.13
0.12
0.11
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.3
0.2
0.1
0
I
D
= 2A
V
GS
= 2.5V
I
D
= 5A
I
D
= 6A
V
GS
= 10V
V
GS
= 4.5V
0
2
4
6
8
10
12
0
5
10
15
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
2.2
0.03
0.028
0.026
0.024
0.022
0.02
0.018
0.016
0.014
0.012
0.01
T
J
= 150
℃
2
1.8
1.6
1.4
1.2
1
V
GS
= 2.5V, I
D
= 2A
T
J
= 125
℃
T
J
= 85
℃
V
GS
= 4.5V, I
D
= 5A
T
J
= 25
℃
T
J
= -55
℃
V
GS
= 10V, I
D
= 6A
0.008
0.006
0.004
0.002
0
0.8
0.6
0.4
V
GS
= 10V
-50 -25
0
25
50
75 100
125 150
0
5
10
15
20
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Junction
Temperature
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
4 of 8
July 2023
DMT3020UFDB
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS39155 Rev. 6 – 2
DMT3020UFDB
3
2.5
2
0.3
0.25
0.2
V
GS
= 2.5V, I
D
= 2A
I
D
= 1mA
1.5
1
0.15
0.1
I
D
= 250
μ
A
V
GS
= 4.5V, I
D
= 5A
V
GS
= 10V, I
D
= 6A
0.5
0
0.05
0
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Junction
Temperature
20
15
10
5
10000
1000
100
f = 1MHz
V
GS
= 0V
C
iss
C
oss
T
J
= 150
o
C
T
J
= 85
o
C
T
J
= 125
o
C
C
rss
T
J
= 25
o
C
T
J
= -55
o
C
10
0
0
10
20
30
0
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
100
10
10
8
R
DS(ON)
Limited
P
W
= 100µs
P
W
= 1ms
P
W
= 10ms
P
W
= 100ms
6
1
V
DS
= 15V, I
D
= 6A
4
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on 1*MRP
Board
0.1
0.01
P
W
= 1s
P
W
= 10s
DC
2
V
GS
= 10V
0
0.1
1
10
100
0
2
4
6
8
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Q
g
(nC)
Figure 11. Gate Charge
5 of 8
July 2023
DMT3020UFDB
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS39155 Rev. 6 – 2
DMT3020UFDB
1
D = 0.7
D = 0.5
D = 0.9
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 147.5
℃
/W
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001 0.0001
0.001
0.01
0.1
1
10
100
1000
10000 100000
1000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
6 of 8
July 2023
DMT3020UFDB
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS39155 Rev. 6 – 2
DMT3020UFDB
Package Outline Dimensions
U-DFN2020-6 (Type B)
A3
A1
A
S
e
a
t
ing
P
l
ane
U-DFN2020-6
Type B
Dim
A
A1
A3
b
D
D2
e
Min
Max Typ
D
0.545 0.605 0.575
0.00 0.05 0.02
–
0.20 0.30 0.25
1.95 2.075 2.00
0.50 0.70 0.60
D2
D2
–
0.13
R
0
.
1
5
0
–
–
0.65
z1
E
E2
k
1.95 2.075 2.00
0.90 1.10 1.00
E
E2
z1
–
–
0.45
k
L
0.25 0.35 0.30
z
z1
–
–
–
–
0.225
0.175
L
All Dimensions in mm
e
z
b
Suggested Pad Layout
U-DFN2020-6 (Type B)
X2
C
Value
Dimensions
(in mm)
0.650
0.150
0.450
0.350
0.600
1.650
0.500
1.000
2.300
C
G
G1
X
X1
X2
Y
Y1
Y2
X1( 2x)
Y
1
( 2x)
Y2
G
Y
G1
X
7 of 8
July 2023
DMT3020UFDB
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS39155 Rev. 6 – 2
DMT3020UFDB
IMPORTANT NOTICE
DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH
1.
REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF
MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY
RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
2.
The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes
’ products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product
described herein. This document is intended for skilled and technically trained engineering customers and users who desig
n with Diodes’ products.
Diodes’ products may be used to facilitate safety
-related applications; however, in all instances customers and users are responsible for (a) selecting
the appropriate Diodes products for their applications, (b) evaluating the suit
ability of Diodes’ products for their intended applications, (c) ensuring
their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as sa
fety and functional-
safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques,
redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications.
3.
Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from
time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and
will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages
and liabilities.
4.
Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications.
Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark
applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties
whose products and services may be described in this document or on Diodes’ website) under this document.
5.
Diodes’
products
are
provided
subject
to
Diod
es’
Standard
Terms
and
Conditions
of
Sale
(
https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/
)
or other applicable terms. This document does not
alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products
purchased through unauthorized sales channel.
6.
Diodes’ products and tec
hnology may not be used for or incorporated into any products or systems whose manufacture, use or sale is
prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contravention of any
applicable laws or
regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or
penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless
against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with
the applicable laws and regulations, as well as any unintended or unauthorized application.
7.
While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain
technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and
Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make
modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final
and determinative format released by Diodes.
8.
Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is
prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized
use.
9. This Notice may be periodically updated with the most recent version available at
https://www.diodes.com/about/company/terms-and-
The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries.
All other trademarks are the property of their respective owners.
© 2023 Diodes Incorporated. All Rights Reserved.
8 of 8
July 2023
DMT3020UFDB
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS39155 Rev. 6 – 2
