Diodes-Incorporated-DMT32M5LPS-13
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DMT32M5LPS
Green
30V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary
Features
Thermally Efficient Package-Cooler Running Applications
<1.1mm Package Profile
–
Ideal for Thin Applications
High Conversion Efficiency
I
D
BV
DSS
R
DS(ON)
T
C
= +25°C
Low R
DS(ON)
–
Minimizes On State Losses
Low Input Capacitance
2.0
mΩ @ V
GS
= 10V
3.0
mΩ @ V
GS
= 4.5V
150A
100A
30V
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free.
“Green” Device (Note 3)
Description and Applications
Mechanical Data
This new generation MOSFET is designed to minimize R
DS(ON),
yet
maintain superior switching performance. This device is ideal for use
in power management and load switch.
®
Case: PowerDI
5060-8
Case Material:
Molded Plastic, ―Green‖ Molding Compound. UL
Flammability Classification Rating 94V-0
DC-DC Converters
Load Switch
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8
S
S
D
D
D
D
Pin1
S
G
Top View
Pin Configuration
Top View
Internal Schematic
Bottom View
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMT32M5LPS-13
PowerDI5060-8
2,500 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html
for more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
D
D
D
D
= Manufacturer’s Marking
T32M5LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 17 = 2017)
T32M5LS
YY WW
WW = Week (01 to 53)
S
S
S
G
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
June 2017
© Diodes Incorporated
DMT32M5LPS
Document number: DS39663
Rev. 2 – 2
DMT32M5LPS
Maximum Ratings
(@T
C
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Unit
V
Gate-Source Voltage
±20
V
V
GSS
Steady
Continuous Drain Current, V
GS
= 10V (Note 6)
State
T
C
= +25
C
T
C
= +70
C
150
120
A
I
D
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
Pulsed Body Diode Forward Current (10
μ
s Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.1mH
80
A
A
I
S
I
DM
I
SM
I
AS
E
AS
A
A
Avalanche Energy, L = 0.1mH
mJ
Thermal Characteristics
(@T
C
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
R
Value
3.2
54
Unit
W
Total Power Dissipation (Note 5)
T
A
= +25°C
T
C
= +25°C
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
JA
100
P
D
R
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
1.5
°C/W
°C
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
C
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
30
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current
Gate-Source Leakage
μ
A
nA
V
DS
= 24V, V
GS
= 0V
V
GS
= ±16V, V
DS
= 0V
±100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1
—
3
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 1mA
V
GS
= 10V, I
D
= 30A
V
GS
= 4.5V, I
D
= 30A
V
GS
= 0V, I
S
= 30A
—
—
—
1.6
2.3
0.8
2.0
3.0
1.1
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
3944
1267
186
0.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
34
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
68
Q
g
nC
ns
V
DS
= 15V, I
D
= 20A
8
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
15
Turn-On Delay Time
7.2
Turn-On Rise Time
13.2
37.5
23.9
28.7
45.8
V
DD
= 15V, V
GS
= 10V,
I
D
= 15A, R
G
= 3
Ω
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
t
RR
I
S
= 15A, di/dt = 50
0A/μs
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
2 of 7
June 2017
© Diodes Incorporated
DMT32M5LPS
Document number: DS39663
Rev. 2 – 2
DMT32M5LPS
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
GS
= 3.0V
V
GS
= 4.0V
V
DS
= 5.0V
V
GS
= 2.7V
V
GS
= 2.5V
V
GS
= 4.5V
V
GS
= 10V
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 125
o
C
V
GS
= 2.2V
V
GS
= 2.1V
V
GS
= 2.0V
T
J
= -55
o
C
0
0.0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
0.2
0.18
0.16
0.14
0.12
0.1
3.000
2.500
2.000
1.500
1.000
0.500
0.000
I
D
= 30A
V
GS
= 4.5V
0.08
0.06
0.04
0.02
0
V
GS
= 10V
0
5
10
15
20
25
30
0
2
4
6
8
10 12 14 16 18 20
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
3
2.5
2
2
1.8
1.6
1.4
1.2
1
V
GS
= 10V
V
GS
= 10V, I
D
= 30A
T
J
= 150
o
C
T
J
= 125
o
C
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= -55
o
C
1.5
1
V
GS
= 4.5V, I
D
= 30A
0.8
0.6
0.4
0.2
0
0.5
0
-50 -25
0
25
50
75 100
125 150
0
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
Figure 6. On-Resistance Variation with Temperature
3 of 7
June 2017
© Diodes Incorporated
DMT32M5LPS
Document number: DS39663
Rev. 2 – 2
DMT32M5LPS
0.004
0.003
0.002
0.001
0
2
1.8
1.6
1.4
1.2
1
V
GS
= 4.5V, I
D
= 30A
I
D
= 1mA
I
D
= 250µA
0.8
0.6
0.4
0.2
0
V
GS
= 10V, I
D
= 30A
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
Figure 7. On-Resistance Variation with Temperature
30
25
20
15
10
5
10000
1000
100
V
GS
= 0V
f = 1MHz
C
iss
C
oss
T
J
= 150
o
C
T
J
= 125
o
C
C
rss
T
J
= 25
o
C
T
J
= 85
o
C
T
J
= -55
o
C
0
0
0.3
0.6
0.9
1.2
0
5
10
15
20
25
30
V
SD
, SOURCE-DRAIN VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
Figure 9. Diode Forward Voltage vs. Current
1000
100
10
10
8
P
W
= 1µs
R
DS(ON)
Limited
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
6
4
P
W
= 1ms
P
W
= 100µs
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on Infinite
Heatsink
V
DS
= 15V, I
D
= 20A
1
2
P
W
= 10µs
V
GS
= 10V
0.1
0
0.1
1
10
100
0
10
20
30
Q
g
(nC)
Figure 11. Gate Charge
40
50
60
70
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
4 of 7
June 2017
© Diodes Incorporated
DMT32M5LPS
Document number: DS39663
Rev. 2 – 2
DMT32M5LPS
1
D=0.9
D=0.7
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
D=Single Pulse
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 1.5
℃
/W
Duty Cycle, D = t1/t2
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
June 2017
© Diodes Incorporated
DMT32M5LPS
Document number: DS39663
Rev. 2 – 2
DMT32M5LPS
Package Outline Dimensions
PowerDI5060-8
PowerDI5060-8
D
D1
Dim
A
A1
b
b2
b3
c
Min
0.90
0.00
0.33
0.200
0.40
0.230
Max
1.10
0.05
0.51
0.350 0.273
0.80 0.60
Typ
1.00
Detail A
c
0( 4X)
A1
0.41
E1 E
0.330 0.277
5.15 BSC
D
e
D1
D2
D3
E
E1
E2
E3
e
G
K
L
L1
M
4.70
3.70
3.90
5.10
4.10
4.30
6.15 BSC
6.00
3.68
4.39
1.27 BSC
0.71
0.71
0.200 0.175
4.035 3.635
1.40
12°
8°
4.90
3.90
4.10
01 (
4X)
1
b (
8X)
L
e/2
5.60
3.28
3.99
5.80
3.48
4.19
1
b2 (
4X)
D3
K
0.51
0.51
0.51
0.100
3.235
1.00
10°
0.61
0.61
A
D2
b3 (
4X)
E3
E2
M
M1
Detail A
M1
Θ
Θ1
1.21
11°
7°
G
L1
6°
All Dimensions in mm
Suggested Pad Layout
PowerDI5060-8
X4
Y2
Dimensions
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
X3
C
G
G1
X
Y3
Y1
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
X2
Y5
Y4
X1
Y7
G1
C
Y6
Y( 4x)
X
G
6 of 7
June 2017
© Diodes Incorporated
DMT32M5LPS
Document number: DS39663
Rev. 2 – 2
DMT32M5LPS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
7 of 7
June 2017
© Diodes Incorporated
DMT32M5LPS
Document number: DS39663
Rev. 2 – 2
