Diodes-Incorporated-DMT4011LSS-13
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DMT4011LSS
40V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
I
D
Max
T
A
= +25°C
10.8A
BV
DSS
R
DS(ON)
Max
Low Input Capacitance
Fast Switching Speed
11.5
mΩ
@ V
GS
= 10V
17.6
mΩ
@ V
GS
= 4.5V
40V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
8.7A
Mechanical Data
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
), maintain superior switching performance, making it ideal for
high efficiency power management applications.
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
–
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.076 grams (Approximate)
DC-DC Converters
Synchronous Rectification
Power Supplies
SO-8
S
S
S
G
D
D
D
Pin1
D
Pin-Out
Top View
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMT4011LSS-13
SO-8
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s
definitions of Halogen- and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
8
5
= Manufacturer’s Marking
T4011LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 19 = 2019)
WW or WW = Week (01 to 53)
T4011LS
YY
WW
1
4
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January 2019
© Diodes Incorporated
DMT4011LSS
Document number: DS41355
Rev. 2 – 2
DMT4011LSS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
40
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
A
= +25°C
Continuous Drain Current, V
GS
= 10V (Note 6)
T
A
= +70°C
10.8
8.67
A
A
I
D
T
A
= +25°C
Continuous Drain Current, V
GS
= 10V (Note 5)
T
A
= +70°C
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current, L = 0.1mH
8.7
6.9
I
D
I
DM
I
S
70
A
A
2.4
19.9
19.8
A
I
AS
E
AS
Avalanche Energy, L = 0.1mH
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
Value
1.31
Unit
W
Total Power Dissipation (Note 5)
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
95.4
°C/W
W
R
θ
JA
2.02
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
61.7
°C/W
°C/W
°C
R
θ
JA
9.3
R
θ
JC
T
J,
T
STG
Operating and Storage Temperature Range
-55 to +150
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
40
—
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
—
1
µA
V
DS
= 32V, V
GS
= 0V
V
GS
= +20V, V
DS
= 0V
V
GS
= -16V, V
DS
= 0V
+100
-100
Gate-Source Leakage
—
—
nA
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.1
—
—
—
1.7
8.5
2.4
11.5
17.6
1.2
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 20A
V
GS
= 0V, I
S
= 20A
Static Drain-Source On-Resistance
12.8
0.84
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
829
248
24.6
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
G
V
DS
= 20V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
14.3
7.2
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Q
G
Q
G
nC
V
DS
= 20V, I
D
= 20A
1.7
Q
GS
Q
GD
t
D(ON)
t
R
Gate-Drain Charge
3.0
Turn-On Delay Time
4.4
Turn-On Rise Time
3.7
V
GS
= 10V, V
DS
= 20V,
R
G
= 1.6
Ω
, I
D
= 20A
ns
Turn-Off Delay Time
13.5
3.3
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
11.9
9.4
ns
t
RR
I
F
= 15A, di/dt = 400A/µs
nC
Q
RR
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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January 2019
© Diodes Incorporated
DMT4011LSS
Document number: DS41355
Rev. 2 – 2
DMT4011LSS
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
20
15
10
5
V
GS
= 4.5V
V
GS
= 5.0V
V
DS
= 5V
V
GS
= 4.0V
V
GS
= 10V
V
GS
= 3.0V
V
GS
= 2.8V
T
J
= 85
℃
V
GS
= 2.5V
V
GS
= 2.3V
T
J
= 150
℃
T
J
= 125
℃
T
J
= 25
℃
T
J
= -55
℃
0.0
0
0
0.5
1
1.5
2
2.5
3
1
2
3
4
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
0.02
0.018
0.016
0.014
0.012
0.01
0.1
0.08
0.06
0.04
0.02
0
V
GS
= 4.5V
I
D
= 20A
V
GS
= 10V
0.008
0.006
0.004
0
5
10
15
20
25
30
0
2
4
6
8
10 12 14 16 18 20
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. Typical Transfer Characteristic
0.02
0.018
0.016
0.014
0.012
0.01
2.2
2
V
GS
= 10V
1.8
1.6
1.4
1.2
1
T
J
= 150
℃
V
GS
= 10V, I
D
= 20A
T
J
= 125
℃
T
J
= 85
℃
0.008
0.006
0.004
0.002
0
T
J
= 25
℃
T
J
= -55
℃
V
GS
= 4.5V, I
D
= 20A
0.8
0.6
0
5
10
15
20
-50 -25
0
25 50 75
100 125 150 175
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 5. Typical On-Resistance vs. Drain Current
and Junction Temperature
Figure 6. On-Resistance Variation with Junction
Temperature
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January 2019
© Diodes Incorporated
DMT4011LSS
Document number: DS41355
Rev. 2 – 2
DMT4011LSS
0.022
0.02
3
2.5
2
0.018
0.016
0.014
0.012
0.01
V
GS
= 4.5V, I
D
= 20A
I
D
= 1mA
1.5
1
I
D
= 250
μ
A
0.008
0.006
0.004
0.002
0
V
GS
= 10V, I
D
= 20A
0.5
0
-50 -25
0
25 50 75
100 125 150 175
-50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Junction
Temperature
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
1000
100
10
30
25
20
15
10
5
V
GS
= 0V
f = 1MHz
C
iss
C
oss
C
rss
T
J
= 85
o
C
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= -55
o
C
1
0
0
5
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
100
10
R
DS(ON)
Limited
P
W
= 1ms
P
W
= 100µs
6
1
P
W
= 10ms
4
P
W
= 100ms
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on
1*MRP Board
V
GS
= 10V
V
DS
= 20V, I
D
= 20A
0.1
0.01
P
W
= 1s
P
W
= 10s
2
DC
0
0
3
6
9
12
15
0.1
1
10
100
Q
g
(nC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
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January 2019
© Diodes Incorporated
DMT4011LSS
Document number: DS41355
Rev. 2 – 2
DMT4011LSS
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.01
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 98.24
℃
/W
Duty Cycle, D = t1 / t2
0.001
1E-05 0.0001 0.001
0.01
0.1
1
10
100
1000
10000 100000
1000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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January 2019
© Diodes Incorporated
DMT4011LSS
Document number: DS41355
Rev. 2 – 2
DMT4011LSS
Package Outline Dimensions
SO-8
SO-8
Dim Min
Max
1.50
0.20
0.50
0.25
4.95
6.10
3.90
3.95
—
Typ
1.45
0.15
0.40
0.20
4.90
6.00
3.85
3.90
1.27
0.35
0.72
0.65
A
A1
b
c
D
1.40
0.10
0.30
0.15
4.85
5.90
3.80
3.85
—
E
1
E
E1
E0
e
b
E1
h
–
—
0.82
0.70
h
)
Q
L
Q
0.62
0.60
sides
All
(
7°
9°
c
All Dimensions in mm
4°± 3°
A
Gauge Plane
Seating Plane
L
A1
e
E0
D
Suggested Pad Layout
SO-8
X1
Dimensions Value
(in mm)
C
X
X1
Y
1.27
0.802
4.612
1.505
6.50
Y1
Y1
Y
C
X
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January 2019
© Diodes Incorporated
DMT4011LSS
Document number: DS41355
Rev. 2 – 2
DMT4011LSS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
7 of 7
January 2019
© Diodes Incorporated
DMT4011LSS
Document number: DS41355
Rev. 2 – 2
Mouser Electronics
Authorized Distributor
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