Diodes-Incorporated-DMT4015LDV-7
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DMT4015LDV
40V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8
Product Summary
Features and Benefits
100% Unclamped Inductive Switching (UIS) Test in Production
—
Ensures More Reliable and Robust End Application
Low R
DS(ON)
—
Ensures On-State Losses Are Minimized
Low On-Resistance
I
D
Max
BV
DSS
R
DS(ON)
Max
T
C
= +25°C
20m
Ω
@ V
GS
= 10V
25m
Ω
@ V
GS
= 4.5V
21.2A
19.1A
40V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us
or your local Diodes representative.
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) yet maintain superior switching performance, making it ideal
for high efficiency power management applications.
Mechanical Data
Wireless Charging
DC-DC Converters
Power Management
®
Case: PowerDI
3333-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
—
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
PowerDI3333-8 (Type UXC)
D1
D1
D2
D2
S1
G1
ESD PROTECTED
S2
G2
Gate Protection
Diode
Gate Protection
Diode
Pin 1
Top View
Bottom View
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMT4015LDV-7
DMT4015LDV-13
Case
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
PowerDI3333-8 (Type UXC)
PowerDI3333-8 (Type UXC)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/
for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <90
0ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
T4D = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 20 = 2020)
WW = Week Code (01 to 53)
T4D
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
July 2020
© Diodes Incorporated
DMT4015LDV
Document number: DS42627
Rev. 2 – 2
DMT4015LDV
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
40
Unit
V
Gate-Source Voltage
±16
V
V
GSS
T
C
= +25°C
T
C
= +70°C
T
A
= +25°C
T
A
= +70°C
21.2
17.0
A
A
Continuous Drain Current (Note 6) V
GS
= 10V
I
D
7.8
6.3
Steady State
Continuous Drain Current (Note 6) V
GS
= 10V
I
D
I
DM
I
S
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
50
2
A
A
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.1mH
50
A
I
SM
I
AS
E
AS
20.7
21.4
A
Avalanche Energy, L = 0.1mH
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
Value
1.1
Unit
W
Total Power Dissipation (Note 5)
T
A
= +25°C
Steady State
T
A
= +25°C
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
110.6
2.0
°C/W
W
R
JA
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
61.2
8.3
°C/W
°C/W
R
JA
R
JC
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
V
GS
= 0V, I
D
= 1mA
40
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
Zero Gate Voltage Drain Current
Gate-Source Leakage
µA
µA
V
DS
= 40V, V
GS
= 0V
V
GS
= ±16V, V
DS
= 0V
±10
I
GSS
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
0.75
—
—
2.5
20
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 8A
V
GS
= 4.5V, I
D
= 4A
V
GS
= 0V, I
S
= 1A
15.3
20.1
0.7
Static Drain-Source On-Resistance
—
25
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
808
279
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1.4
V
DS
= 0V, V
GS
= 0V, f = 1MHz
8.6
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
15.7
2.9
Q
g
V
DS
= 30V, I
D
= 10A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
3.4
Turn-On Delay Time
7.5
Turn-On Rise Time
2.7
V
GS
= 10V, V
DS
= 30V,
R
g
= 6
Ω
, I
D
= 10A
Turn-Off Delay Time
17.4
8.9
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
t
RR
26.7
16.2
I
F
= 10A, di/dt = 100A/µs
Body Diode Reverse Recovery Charge
Q
RR
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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July 2020
© Diodes Incorporated
DMT4015LDV
Document number: DS42627
Rev. 2 – 2
DMT4015LDV
30
25
20
15
10
5
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
V
GS
= 4.0V
V
DS
= 5V
V
GS
= 4.5V
V
GS
= 6.0V
V
GS
= 10.0V
V
GS
= 3.5V
V
GS
= 3.0V
V
GS
= 2.5V
T
J
= 85
℃
T
J
= 25
℃
T
J
= 150
℃
T
J
= 125
℃
T
J
= -55
℃
0
0.0
1
2
3
4
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.03
0.028
0.026
0.024
0.022
0.02
V
GS
= 4.5V
I
D
= 4A
I
D
= 8A
0.018
0.016
0.014
0.012
0.01
V
GS
= 10V
0.008
0.006
0.004
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
30
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
1.8
1.6
1.4
1.2
1
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
V
GS
= 10V
V
GS
= 10V, I
D
= 8A
T
J
= 150
℃
T
J
= 125
℃
T
J
= 85
℃
T
J
= 25
℃
V
GS
= 4.5V, I
D
= 4A
T
J
= -55
℃
0.8
0.6
-50 -25
0
25
50
75 100
125 150
0
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 6. On-Resistance Variation with Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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July 2020
© Diodes Incorporated
DMT4015LDV
Document number: DS42627
Rev. 2 – 2
DMT4015LDV
3
2.5
2
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
V
GS
= 4.5V, I
D
= 4A
I
D
= 1mA
1.5
1
I
D
= 250
μ
A
V
GS
= 10V, I
D
= 8A
0.5
0
-50 -25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
-50 -25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
0
25
50
75
100 125 150
30
25
20
15
10
5
10000
1000
100
10
f = 1MHz
V
GS
= 0V
C
iss
C
oss
T
J
= 85
o
C
T
J
= 150
o
C
T
J
= 125
o
C
C
rss
T
J
= 25
o
C
T
J
= -55
o
C
1
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65
0
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
100
10
10
8
R
DS(ON)
Limited
P
W
= 100µs
6
P
W
= 1ms
V
DS
= 30V, I
D
= 10A
1
P
W
= 10ms
P
W
= 100ms
4
T
J(Max)
= 150
℃
0.1
0.01
T
C
= 25
℃
Single Pulse
DUT on 1*MRP
board
P
W
= 1s
P
W
= 10s
2
DC
V
GS
= 10V
0
0.1
1
10
100
0
2
4
6
8
10
12
14
16
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Q
g
(nC)
Figure 11. Gate Charge
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July 2020
© Diodes Incorporated
DMT4015LDV
Document number: DS42627
Rev. 2 – 2
DMT4015LDV
1
D=0.7
D=0.5
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
0.001
D=0.01
D=0.005
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 110.6
℃
/W
Duty Cycle, D = t1/t2
D=Single Pulse
0.00001 0.0001
0.001
0.01
0.1
1
10
100
1000
10000 100000
1000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
July 2020
© Diodes Incorporated
DMT4015LDV
Document number: DS42627
Rev. 2 – 2
DMT4015LDV
Package Outline Dimensions
PowerDI3333-8 (Type UXC)
D
D1
A
A1
PowerDI3333-8
(Type UXC)
Dim Min
Max Typ
A
0.75 0.85 0.80
A1
0.00 0.05
—
b
c
D
0.25 0.40 0.32
0.10 0.25 0.15
3.20 3.40 3.30
E1 E
D1
2.95 3.15 3.05
D2
0.90 1.30 1.10
E
3.20 3.40 3.30
E1
2.95 3.15 3.05
E2
1.60 2.00 1.80
E3
0.95 1.35 1.15
E4
0.10 0.30 0.20
c
L
e
L
k
0.65
0.30 0.50 0.40
0.50 0.90 0.70
E3
k
E4
k1
0.13 0.53 0.33
E2
a
0
°
12
°
10
°
All Dimensions in mm
D2
k1
L
b
e
Suggested Pad Layout
PowerDI3333-8 (Type UXC)
X3
X2
Dimensions Value
(in mm)
C
G
G1
X
X1
X2
X3
Y
Y1
Y2
Y3
0.650
0.230
0.600
0.420
1.200
2.370
2.630
0.600
1.900
2.400
3.600
Y2
G1
X1
Y1
Y
Y3
G
X
C
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July 2020
© Diodes Incorporated
DMT4015LDV
Document number: DS42627
Rev. 2 – 2
DMT4015LDV
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
7 of 7
July 2020
© Diodes Incorporated
DMT4015LDV
Document number: DS42627
Rev. 2 – 2
