Diodes-Incorporated-DMT5012LFVW-13
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DMT5012LFVW
50V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8
Product Summary
Features
I
D
Max
T
C
= +25°C
51.4A
100% Unclamped Inductive Switching (UIS) Test in Production
—
Ensures More Reliable and Robust End Application
Low On-Resistance
BV
DSS
R
DS(ON)
Max
13m
Ω
@ V
GS
= 10V
20m
Ω
@ V
GS
= 4.5V
50V
41.7A
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Wettable Flank for Improved Optical Inspection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us
or your local Diodes representative.
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Mechanical Data
Backlighting
®
Power Management Functions
DC-DC Converters
Case: PowerDI
3333-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
PowerDI3333-8 (SWP) (Type UX)
D
D
D
D
G
S
S
S
Pin 1
Equivalent Circuit
Top View
Bottom View
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMT5012LFVW-7
DMT5012LFVW-13
2000/Tape & Reel
3000/Tape & Reel
PowerDI3333-8 (SWP) (Type UX)
PowerDI3333-8 (SWP) (Type UX)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
T5W = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 20 = 2020)
WW = Week Code (01 to 53)
T5W
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
February 2020
© Diodes Incorporated
DMT5012LFVW
Document number: DS42179
Rev. 2 – 2
DMT5012LFVW
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
50
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
C
= +25°C
51.4
41.1
A
A
I
D
T
C
= +70°C
T
A
= +25°C
T
A
= +70°C
Continuous Drain Current (Note 5) V
GS
= 10V
11.7
9.3
I
D
I
DM
I
S
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.1mH
205
51
A
A
205
23.2
26.9
A
I
SM
I
AS
E
AS
A
Avalanche Energy, L = 0.1mH
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
Value
2.7
Unit
W
Total Power Dissipation (Note 5)
T
A
= +25°C
T
C
= +25°C
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
47
°C/W
W
R
JA
51.4
P
D
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
2.43
°C/W
°C
R
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
50
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
V
DS
= 40V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
µA
nA
±100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.2
—
—
—
—
9.2
2.3
13
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 6A
V
GS
= 0V, I
S
= 1A
Static Drain-Source On-Resistance
14.3
0.7
20
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
738
279
23
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1.6
V
DS
= 0V, V
GS
= 0V, f = 1MHz
10.5
17.6
3.5
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
Q
g
V
DS
= 30V, I
D
= 10A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
5.0
Turn-On Delay Time
7.7
Turn-On Rise Time
2.9
V
DD
= 30V, V
GS
= 10V,
R
G
= 6
Ω
, I
D
= 10A
Turn-Off Delay Time
16.9
10.2
40.2
56.9
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
t
RR
I
F
= 10A, di/dt = 300A/
μ
s
Body Diode Reverse Recovery Charge
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 7
February 2020
© Diodes Incorporated
DMT5012LFVW
Document number: DS42179
Rev. 2 – 2
DMT5012LFVW
30
25
20
15
10
5
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
V
GS
= 10.0V
V
DS
= 5V
V
GS
= 4.0V
V
GS
= 6.0V
V
GS
= 4.5V
V
GS
= 3.5V
T
J
= 150
℃
T
J
= 125
℃
T
J
= 85
℃
T
J
= 25
℃
V
GS
= 3.0V
V
GS
= 2.8V
V
GS
= 2.5V
T
J
= -55
℃
0
0.0
1
2
3
4
0
0.5
1
1.5
2
2.5
3
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.018
0.016
0.014
0.012
0.01
I
D
= 6A
V
GS
= 4.5V
I
D
= 10A
V
GS
= 10V
0.008
0.006
0.004
0
2
4
6
8
10 12 14 16 18 20
0
5
10
15
20
25
30
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and Gate
Voltage
2.2
2
0.02
V
GS
= 10V
0.018
T
J
= 150
℃
0.016
1.8
1.6
1.4
1.2
1
V
GS
= 10V, I
D
= 10A
0.014
T
J
= 125
℃
0.012
T
J
= 85
℃
0.01
T
J
= 25
℃
0.008
0.006
V
GS
= 4.5V, I
D
= 6A
T
J
= -55
℃
0.004
0.002
0
0.8
0.6
-50 -25
0
25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
50
75 100
125 150
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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February 2020
© Diodes Incorporated
DMT5012LFVW
Document number: DS42179
Rev. 2 – 2
DMT5012LFVW
3
2.5
2
0.024
0.022
0.02
0.018
0.016
0.014
0.012
0.01
V
GS
= 4.5V, I
D
= 6A
I
D
= 1mA
1.5
1
I
D
= 250
μ
A
0.008
0.006
0.004
0.002
0
V
GS
= 10V, I
D
= 10A
0.5
0
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
Figure 7. On-Resistance Variation with Temperature
10000
1000
100
10
30
V
GS
= 0V
f = 1MHz
25
20
15
10
5
C
iss
C
oss
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 125
o
C
C
rss
T
J
= -55
o
C
1
0
0
10
20
30
40
50
0
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1000
100
10
10
8
P
W
= 1µs
R
DS(ON)
Limited
P
W
= 10µs
P
W
= 100µs
P
W
= 1ms
P
W
= 10ms
P
W
= 100ms
P
W
= 1s
6
1
4
T
J(Max)
= 150
℃
V
DS
= 30V, I
D
= 10A
T
C
= 25
℃
0.1
0.01
2
Single Pulse
DUT on Infinite
Heatsink
V
GS
= 10V
0
0.1
1
10
100
0
2
4
6
8
10 12 14 16 18 20
Q
g
(nC)
Figure 11. Gate Charge
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
4 of 7
February 2020
© Diodes Incorporated
DMT5012LFVW
Document number: DS42179
Rev. 2 – 2
DMT5012LFVW
1
D=0.9
D=0.7
D=0.5
D=0.3
D=0.1
0.1
D=0.05
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.01
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 2.43
℃
/W
Duty Cycle, D = t1/t2
0.001
0.00001 0.0001
0.001
0.01
0.1
1
10
100
1000
10000 100000
1000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
February 2020
© Diodes Incorporated
DMT5012LFVW
Document number: DS42179
Rev. 2 – 2
DMT5012LFVW
Package Outline Dimensions
PowerDI3333-8 (SWP) (Type UX)
D
PowerDI3333-8 (SWP)
(Type UX)
A
D1
A1
Dim Min
Max Typ
A
0.75 0.85 0.80
A1
0.00 0.05
—
b
c
D
0.25 0.40 0.32
0.10 0.25 0.15
3.20 3.40 3.30
E1
E
D1
2.95 3.15 3.05
D2
2.30 2.70 2.50
E
3.20 3.40 3.30
0
E1
2.95 3.15 3.05
E2
1.60 2.00 1.80
E3
0.95 1.35 1.15
E4
0.10 0.30 0.20
e
k
L
θ
c
Detail A
Detail A
0.65
L
0.50 0.90 0.70
0.30 0.50 0.40
E4
E3
k
0
°
12
°
10
°
E2
All Dimensions in mm
0.050
D2
0.150
L
e
b
Suggested Pad Layout
PowerDI3333-8 (SWP) (Type UX)
X3
Dimensions Value
(in mm)
C
X
0.650
0.420
0.420
0.230
2.600
3.500
0.700
0.550
1.650
0.600
2.450
0.400
3.700
X1
X2
Y1
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y2
Y4
Y5
Y6
X4
Y3
Y
X
C
6 of 7
February 2020
© Diodes Incorporated
DMT5012LFVW
Document number: DS42179
Rev. 2 – 2
DMT5012LFVW
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
7 of 7
February 2020
© Diodes Incorporated
DMT5012LFVW
Document number: DS42179
Rev. 2 – 2
Mouser Electronics
Authorized Distributor
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