Diodes-Incorporated-DMT6004LPS-13
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DMT6004LPS
Green
60V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary
Features
100% Unclamped Inductive Switching
–
Ensures More Reliable
and Robust End Application
I
D
MAX
T
C
= +25°C
BV
DSS
R
DS(ON)
Max
Low R
DS(ON)
–
Minimizes Power Losses
100A
100A
3.1
mΩ @ V
GS
= 10V
4.5
mΩ @ V
GS
= 4.5V
Low Q
G
–
Minimizes Switching Losses
60V
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device
(Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
Case: PowerDI
®
5060-8
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
), yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Case Material:
Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish
–
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Primary Switch in Isolated DC-DC
Synchronous Rectifier
Loadswitch
PowerDI5060-8
S
S
D
D
D
D
Pin1
S
G
Top View
Pin Configuration
Top View
Internal Schematic
Bottom View
Ordering Information
(Note 4)
Part Number
DMT6004LPS-13
Case
PowerDI5060-8
Packaging
2,500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See
http://www.diodes.com/quality/lead_free/
fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
D
D
D
D
= Manufacturer’s Marking
T6004LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 18 = 2018)
T6004LS
YY WW
WW = Week (01 to 53)
S
S
S
G
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
February 2018
© Diodes Incorporated
DMT6004LPS
Document number: DS37686
Rev. 4 – 2
DMT6004LPS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
60
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
22
16
Continuous Drain Current (Note 5)
A
I
D
100
Continuous Drain Current (Note 6)
A
I
D
T
C
= +70°C
(Note 8)
100
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.2mH
100
200
200
40
A
A
I
S
I
DM
I
SM
I
AS
E
AS
A
A
160
Avalanche Energy, L = 0.2mH
mJ
Thermal Characteristic
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
2.5
Unit
W
T
A
= +25°C
T
C
= +25°C
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
47
°C/W
W
R
θ
JA
139
0.9
P
D
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
°C/W
R
θ
JC
-55 to +150
°C
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
V
GS
= 0V, I
D
= 1mA
—
—
—
60
—
—
—
1
V
BV
DSS
I
DSS
μ
A
nA
V
DS
= 48V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
±100
I
GSS
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
1
—
2.5
3.3
—
3
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 25A
V
GS
= 4.5V, I
D
= 20A
V
GS
= 0V, I
S
= 25A
—
—
—
3.1
4.5
1.3
m
Ω
m
Ω
V
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4,515
1,477
135.3
0.64
96.3
47.4
14.1
21.4
9.9
—
—
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Q
g
Q
g
nC
ns
V
DD
= 30V, I
D
= 25A
Q
gs
Q
GD
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
17.7
53.5
32.9
49.7
78.9
Turn-On Rise Time
V
DD
= 30V, V
GS
= 10V,
I
D
= 25A, R
g
= 3.5
Ω
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
ns
t
RR
I
F
= 25A, di/dt = 10
0A/μs
Body Diode Reverse Recovery Charge
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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February 2018
© Diodes Incorporated
DMT6004LPS
Document number: DS37686
Rev. 4 – 2
DMT6004LPS
30
25
20
15
10
5
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
V
GS
=3.5V
V
DS
= 5.0V
V
GS
=3.0V
V
GS
=4.0V
V
GS
=4.5V
V
GS
=10.0V
125
℃
85
℃
150
℃
25
℃
-55
℃
V
GS
=2.5V
0
0.0
0
1
2
3
4
5
6
0
0.5
1
1.5
2
2.5
3
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
10
9
8
7
6
5
4
3
2
1
0
5.00
4.00
3.00
2.00
1.00
0.00
V
GS
=4.5V
I
D
=25A
V
GS
=10.0V
2
4
6
8
10
12
14
16
18
20
0
10
20
30
40
50
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
6
5
4
3
2
1
0
2.2
2
V
GS
=10V
1.8
1.6
1.4
1.2
1
125
℃
150
℃
85
℃
25
℃
V
GS
=4.5V, I
D
=20A
V
GS
=10V, I
D
=25A
-55
℃
0.8
0.6
0.4
10
20
30
40
50
-50
-25
0
25
50
75
100 125 150
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
Figure 5. Typical On-Resistance
vs. Drain Current and
Temperature
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February 2018
© Diodes Incorporated
DMT6004LPS
Document number: DS37686
Rev. 4 – 2
DMT6004LPS
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
2.5
2
1.5
1
I
D
=1mA
V
GS
=4.5V, I
D
=20A
I
D
=250
μ
A
V
GS
=10V, I
D
=25A
0.5
0
-50 -25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Temperature
10000
1000
100
50
C
iss
f=1MHz
V
GS
=0V, T
A
=125
℃
V
GS
=0V, T
A
=150
℃
45
40
35
30
25
20
15
10
5
C
oss
C
rss
V
GS
=0V, T
A
=85
℃
V
GS
=0V, T
A
=25
℃
V
GS
=0V, T
A
=-55
℃
10
0
0
5
10
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1000
10
8
P
= 10µs
P
= 1µs
W
W
R
DS(ON)
Limited
100
10
1
6
V
DS
=30V, I
D
=25A
P
= 100µs
W
4
P
= 1ms
W
T
J(Max)
= 150
℃
T
C
= 25
℃
P
= 10ms
W
2
P
= 100ms
Single Pulse
W
DUT on Infinite Heatsink
V
GS
= 10V
P
= 1s
W
0
0.1
0.1
1
10
100
0
10 20 30 40 50 60 70 80 90
100
Qg (nC)
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 12 SOA, Safe Operation Area
Figure 11. Gate Charge
4 of 7
February 2018
© Diodes Incorporated
DMT6004LPS
Document number: DS37686
Rev. 4 – 2
DMT6004LPS
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
D=0.005
R
θJC
(t)=r(t) * R
θJC
R
θJC
=1.06
℃
/W
Duty Cycle, D=t1 /
t2
D=Single Pulse
0.001
1E-06
1E-05 0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 12. Transient Thermal Resistance
5 of 7
February 2018
© Diodes Incorporated
DMT6004LPS
Document number: DS37686
Rev. 4 – 2
DMT6004LPS
Package Outline Dimensions
PowerDI5060-8
PowerDI5060-8
D
Detail A
c
Dim
A
A1
b
b2
b3
c
Min
0.90
0.00
0.33
0.200
0.40
0.230
Max
1.10
0.05
0.51
0.350 0.273
0.80 0.60
Typ
1.00
D1
0( 4X)
A1
0.41
E1 E
0.330 0.277
5.15 BSC
e
D
D1
D2
D3
E
E1
E2
E3
e
G
K
L
L1
M
4.70
3.70
3.90
5.10
4.10
4.30
6.15 BSC
6.00
3.68
4.39
1.27 BSC
0.71
0.71
0.200 0.175
4.035 3.635
1.40
12º
8º
4.90
3.90
4.10
01 (
4X)
1
b (
8X)
L
e/2
5.60
3.28
3.99
5.80
3.48
4.19
1
b2 (
4X)
D3
K
0.51
0.51
0.51
0.100
3.235
1.00
10º
0.61
0.61
A
D2
b3 (
4X)
E3
E2
M
M1
Detail A
M1
Θ
Θ1
1.21
11º
7º
G
L1
6º
All Dimensions in mm
Suggested Pad Layout
PowerDI5060-8
X4
X3
Y2
Y1
Dimensions
Value (in mm)
Y3
C
G
G1
X
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
X2
Y5
Y4
X1
Y7
G1
C
Y6
Y( 4x)
X
G
6 of 7
February 2018
© Diodes Incorporated
DMT6004LPS
Document number: DS37686
Rev. 4 – 2
DMT6004LPS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
7 of 7
February 2018
© Diodes Incorporated
DMT6004LPS
Document number: DS37686
Rev. 4 – 2
