Diodes-Incorporated-DMT6005LCT
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Green
DMT6005LCT
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
I
D
T
C
= +25°C
100A
100% Unclamped Inductive Switching
–
Ensures More Reliable
and Robust End Application
BV
DSS
R
DS(ON)
Max
6m
Ω
@ V
GS
= 10V
10m
Ω
@ V
GS
= 4.5V
Low Input Capacitance
60V
85A
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
Case: TO220-3
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high-efficiency power management
applications.
Case Material: Molded Plastic
, “Green”
Molding Compound.
UL Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
Engine Management Systems
Body Control Electronics
DC-DC Converters
TO220-3
Top View
Pin Out Configuration
Top View
Equivalent Circuit
Bottom View
Ordering Information
(Note 4)
Part Number
DMT6005LCT
Case
TO220-3
Packaging
50 Pieces/Tube
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
http://www.diodes.com/qu
ality/lead_free.html fo
r more information about Diodes Incorporated’s definitions of Halogen
– and
Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm c
hlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
=Manufacturer’s Marking
T6005L = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Digit of Year (ex: 16 = 2016)
WW or WW = Week Code (01 to 53)
T6005L
YYWW
1 of 6
September 2016
© Diodes Incorporated
DMT6005LCT
Document number: DS38745 Rev. 2 – 2
DMT6005LCT
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
60
Units
V
V
Gate-Source Voltage
20
100
V
GSS
T
C
= +25°C
T
C
= +70°C
T
C
= +25°C
Continuous Drain Current (Note 6)
A
I
D
80
83
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.1mH
A
A
I
S
130
29.5
43.5
I
DM
I
AS
A
Avalanche Energy, L=0.1mH
mJ
E
AS
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
2.3
Units
W
T
A
= +25°C
T
C
= +25°C
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
52.8
°C/W
W
R
θ
JA
104
P
D
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
1.2
°C/W
°C
R
θ
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
V
GS
= 0V, I
D
= 1mA
60
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
µA
nA
V
DS
= 48V, V
GS
= 0V
Gate-Source Leakage
±100
I
GSS
V
GS
=
20V, V
DS
= 0V
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
1
—
4.5
8.8
—
3
6
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
µ
A
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 12.5A
V
GS
= 0V, I
S
= 20A
—
—
—
m
Ω
m
Ω
V
Static Drain-Source On-Resistance
10
1.2
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2,962
965
—
—
—
—
—
—
—
—
—
—
—
—
—
—
C
ISS
C
OSS
C
RSS
R
G
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
60
0.66
47.1
23.1
10.2
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Q
G
Q
G
nC
V
DD
= 30V, I
D
= 50A
Q
GS
Q
GD
t
D(ON)
t
R
Gate-Drain Charge
12.5
8.3
Turn-On Delay Time
Turn-On Rise Time
9.4
22
V
DD
= 30V, V
GS
= 10V,
I
D
= 30A, R
G
= 3.3
Ω
ns
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
8.9
Reverse Recovery Time
Reverse Recovery Charge
40.4
49.7
ns
t
RR
I
F
= 30A, di/dt = 10
0A/μs
nC
Q
RR
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on infinite heat sink.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 6
September 2016
© Diodes Incorporated
DMT6005LCT
Document number: DS38745 Rev. 2 – 2
DMT6005LCT
50
45
40
35
30
25
20
15
10
5
30
25
V
= 10V
DS
V
= 10V
GS
V
T
= 150°C
= 125°C
= 85°C
A
= 6V
GS
T
A
V
= 5V
GS
20
15
T
A
V
= 4
.
5
V
V
= 4
.
0
V
GS
GS
T
= 25°C
A
T
= -55°C
A
10
5
V
= 3
.
5
V
GS
0
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
0
1
2
3
4
5
V
G
S
, GATE-SOURCE VOL
T
AGE
(
V)
V
D
S
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 1
T
y
pical Output Characteristics
Figure 2
T
y
pical Transfer Characteristics
15
12
20
18
16
14
12
10
8
I
= 20A
D
V
= 4
.
5
V
GS
9
6
3
0
V
= 10V
GS
I
= 12
.
5
A
D
6
4
2
0
0
5
10 15 20 25 30 35 40 45 50
2
4
6
8
10
12 14 16 18 20
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
Dr
a
in Current and Gate Voltage
V
G
S
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 4
T
y
pical Transfer Characteristics
10
8
2
1.8
1.6
1.4
1.2
1
T
T
= 150°C
A
A
= 125°C
= 85°C
V
= 10V
GS
I =
20A
D
T
A
6
T
T
= 25°C
A
A
= -55°C
4
2
0
V
I
= 4
.
5
V
GS
= 12
.
5
A
D
0.8
0.6
0.4
V
= 10V
GS
0
5
10
15
20
25
30
–
5
0
–
2
5
0
25
50
75 100 125 150
I
D
, DRAIN CURRENT (A)
Figure 5
T
y
pical On-Resistance vs.
Drain Current and
T
e
m
p
e
r
a
ture
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with
T
e
m
p
e
r
a
ture
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September 2016
© Diodes Incorporated
DMT6005LCT
Document number: DS38745 Rev. 2 – 2
DMT6005LCT
14
12
10
8
3.5
3
V
I
= 4
.
5
V
GS
I
= 1mA
D
= 12
.
5
A
2.5
2
D
I
= 250µA
D
V
= 10V
GS
6
1.5
1
I
= 20A
D
4
2
0.5
0
0
–
5
0
–
2
5
0
25
50
75 100 125
150
–
5
0
–
2
5
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 8 Gate Threshold Variation vs. Junction
T
e
m
p
e
r
a
ture
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
30
10000
f
=
1MHz
C
iss
25
20
T
= 150°C
A
1000
100
T
= 125°C
= 85°C
A
C
o
s
s
15
10
5
T
A
C
r
s
s
T
= 25°C
A
T
= -55°C
A
0
10
0
5
10
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 10
T
y
pical Junction Capacitance
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOL
T
AGE
(
V)
Figure 9 Diode Forward Voltage vs. Current
10
9
8
7
6
5
4
3
2
1
0
1000
100
10
P
= 10
µ
s
W
R
D
S
(
on)
Limi
t
e
d
V
I
= 30V
DS
= 50A
P
= 1s
D
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
1
0.1
W
P
= 100
µ
s
W
T
J
(max)
= 150°C
T
A
= 25°C
V
GS
= 10V
Single Pul
s
e
DUT on 1 * MRP Board
0.01
0
5
10 15 20 25 30 35 40 45 50
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 12 SOA, Safe Operation Area
Q
g
, TO
T
AL GATE CHARGE (nC)
Figure 11 Gate Charge
4 of 6
September 2016
© Diodes Incorporated
DMT6005LCT
Document number: DS38745 Rev. 2 – 2
DMT6005LCT
1
D = 0
.
9
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
0
5
D = 0
.
0
2
D = 0
.
0
1
0.01
R
JC
(t) = r(t) * R
JC
D = 0
.
0
05
R
JC
= 1.2°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIMES (sec)
Figure 13
Transient Thermal Resistance
Package Outline Dimensions
TO220-3
TO220-3
A
E
F
Dim
A
b
b1
C
Min
3.55
0.51
1.14
0.31
Max
ØP
4.85
1.14
1.78
1.14
Q
D1
D
D
14.20 16.50
D1
E
e
e1
F
J1
L
5.84
9.70
2.79
4.83
0.51
2.03
6.86
10.70
2.99
5.33
1.40
2.92
L1
b1
12.72 14.72
C
b
L1
P
Q
3.66
3.53
2.54
6.35
4.09
3.43
e
J1
e1
All Dimensions in mm
5 of 6
September 2016
© Diodes Incorporated
DMT6005LCT
Document number: DS38745 Rev. 2 – 2
DMT6005LCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
6 of 6
September 2016
© Diodes Incorporated
DMT6005LCT
Document number: DS38745 Rev. 2 – 2
