Diodes-Incorporated-DMT6005LPS-13
| Part # | Diodes-Incorporated-DMT6005LPS-13 |
Download  | Diodes-Incorporated-DMT6005LPS-13 |
DMT6005LPS
Green
60V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary
Features
I
D
100% Unclamped Inductive Switching
–
ensures more reliable and
robust end application
BV
DSS
R
DS(ON)
Max
T
C
= +25°C
(Note 9)
Low R
DS(ON)
–
Minimizes Power Losses
100A
100A
4.5
mΩ @ V
GS
= 10V
6.5
mΩ @ V
GS
= 4.5V
60V
Low Q
G
–
Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device
(Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
Case: PowerDI
®
5060-8
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case Material:
Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish
–
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
High Frequency Switching
Sync. Rectification
DC-DC Converters
PowerDI5060-8
S
S
D
D
D
D
Pin1
S
G
Top View
Pin Configuration
Top View
Bottom View
Internal Schematic
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMT6005LPS-13
PowerDI5060-8
2,500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
D
D
D
D
= Manufacturer’s Marking
T6005LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 17 = 2017)
T6005LS
YY WW
WW = Week (01 to 53)
S
S
S
G
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
May 2017
© Diodes Incorporated
DMT6005LPS
Document number: DS38867 Rev. 3 – 2
DMT6005LPS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
60
Units
V
V
Gate-Source Voltage
±20
V
GSS
T
A
= +25°C
T
A
= +70°C
17.9
14.3
Continuous Drain Current (Note 5)
A
I
D
T
C
= +25°C
(Note 9)
100
Continuous Drain Current (Note 6)
A
I
D
90
100
160
14.8
98
T
C
= +100°C
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=1mH
A
A
I
S
I
DM
I
AS
A
Avalanche Energy, L=1mH
mJ
E
AS
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
2.6
Units
W
T
A
= +25°C
T
C
= +25°C
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
47
°C/W
W
R
θ
JA
125
1
P
D
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
°C/W
°C
R
θ
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
60
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 1mA
V
DS
= 48V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
Zero Gate Voltage Drain Current
Gate-Source Leakage
μ
A
nA
±100
I
GSS
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
1
—
3.5
5
3
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 50A
V
GS
= 4.5V, I
D
= 12.5A
V
GS
= 0V, I
S
= 50A
—
—
—
4.5
6.5
—
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
0.9
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2,962
965.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
C
ISS
C
OSS
C
RSS
R
G
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
59.8
0.66
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
47.1
23.1
10.2
12.5
8.3
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Q
G
Q
G
nC
ns
V
DD
= 30V, I
D
= 50A
Q
GS
Q
GD
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
9.4
22
V
DD
= 30V, V
GS
= 10V,
I
D
= 30A, R
G
= 3.3
Ω
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
8.9
Body Diode Reverse Recovery Time
ns
t
RR
40.4
I
F
= 30A, di/dt = 10
0A/μs
Body Diode Reverse Recovery Charge
nC
Q
RR
49.7
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
2 of 7
May 2017
© Diodes Incorporated
DMT6005LPS
Document number: DS38867 Rev. 3 – 2
DMT6005LPS
50
45
40
35
30
25
20
15
10
5
100
90
V
= 10V
= 6V
GS
V
= 2
.
0
V
DS
V
GS
80
70
V
= 4
.
5
V
= 4V
GS
V
GS
GS
V
= 3
.
5
V
60
50
40
T
= 150°C
J
V
= 3V
GS
T
= 25°C
J
T
= 125°C
J
T
= -55°C
J
T
= 85°C
J
30
20
V
= 2
.
8
V
GS
V
= 2
.
6
V
GS
10
0
0
0
0
0.5
1
1.5
2
2.5
3
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 1
T
y
pical Output Characteristic
V
G
S
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 2
T
y
pical Transfer Characteristics
8
7
6
5
4
3
2
1
50
40
30
20
10
0
I
= 50A
D
V
= 4
.
5
V
= 10V
GS
I
= 12
.
5
A
D
V
GS
0
0
5
10
15
20
25
30
2
4
6
8
10 12 14 16 18 20
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
Drain Current and Gate Voltage
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 4
T
y
pical Drain-Source On-Resistance
vs. Gate-Source Voltage
0.008
0.007
0.006
0.005
2
V
= 10V
GS
1.8
1.6
1.4
1.2
1
T
= 150°C
= 125°C
= 85°C
J
V
= 10V
GS
= 50A
T
J
I
D
T
J
V
I
= 4
.
5
V
GS
T
T
= 25°C
= 12
.
5
A
J
J
D
0.004
0.003
0.002
= -55°C
0.8
0.6
0.4
0.001
0
0
5
10
15
20
25
30
–
5
0
–
2
5
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with
T
e
m
p
e
r
a
ture
0
25
50
75 100 125 150
I
D
, DRAIN CURRENT (A)
Figure 5
T
y
pical On-Resistance vs.
Drain Current and
T
e
m
p
e
r
a
ture
3 of 7
May 2017
© Diodes Incorporated
DMT6005LPS
Document number: DS38867 Rev. 3 – 2
DMT6005LPS
0.012
0.01
2.5
2
V
I
= 4
.
5
V
GS
I
= 1mA
0.008
= 12
.
5
A
D
D
1.5
1
I
= 250µA
D
0.006
0.004
0.002
0
V
= 10V
= 50A
GS
I
D
0.5
0
–
5
0
–
2
5
0
25
50
75 100 125 150
–
5
0
–
2
5
0
25
50
75 100 125
150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 8 Gate Threshold Variation vs. Ambient
T
e
m
p
e
r
a
ture
10000
T , JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
J
150
120
90
60
30
0
f = 1MHz
C
iss
1000
100
10
T
= 150°C
C
oss
J
T
= 125°C
= 85°C
J
T
J
C
rss
T
= 25°C
J
T
= -55°C
J
0
5
10
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOL
T
AGE
(
V)
Figure 9 Diode Forward Voltage vs. Current
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
9
8
7
6
5
4
3
2
1
0
1000
100
10
R
DS(ON)
Limited
P
W
= 1µs
P
W
= 10µs
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
P
W
= 100µs
V
DS
= 30V, I
D
= 50A
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on Infinite Heatsink
V
GS
= 10V
1
0.1
0
5
10 15 20 25 30 35 40 45 50
0.1
1
10
100
Q
g
(nC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
4 of 7
May 2017
© Diodes Incorporated
DMT6005LPS
Document number: DS38867 Rev. 3 – 2
DMT6005LPS
1
D=0.9
D=0.5
D=0.3
D=0.7
0.1
D=0.1
D=0.05
0.01
D=0.02
D=0.01
D=0.005
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 1
℃
/W
Duty Cycle, D = t1/t2
D=Single Pulse
1E-05
0.001
1E-06
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
May 2017
© Diodes Incorporated
DMT6005LPS
Document number: DS38867 Rev. 3 – 2
DMT6005LPS
Package Outline Dimensions
PowerDI5060-8
PowerDI5060-8
Dim
A
A1
b
b2
b3
c
Min
0.90
0.00
0.33
0.200
0.40
0.230
Max
1.10
0.05
0.51
0.350 0.273
0.80 0.60
0.330 0.277
5.15 BSC
5.10
4.10
4.30
6.15 BSC
6.00
3.68
4.39
1.27 BSC
0.71
0.71
0.200 0.175
4.035 3.635
1.40
12°
8°
Typ
1.00
D
D1
Detail A
c
0(4X)
A1
0.41
E1 E
D
e
D1
D2
D3
E
E1
E2
E3
e
G
K
L
L1
M
4.70
3.70
3.90
4.90
3.90
4.10
01 (4X)
1
5.60
3.28
3.99
5.80
3.48
4.19
b (8X)
L
e/2
1
b2 (4X)
D3
K
0.51
0.51
0.51
0.100
3.235
1.00
10°
0.61
0.61
A
D2
b3 (4X)
E3
E2
M
M1
M1
Θ
Θ1
1.21
11°
7°
Detail A
G
L1
6°
All Dimensions in mm
Suggested Pad Layout
PowerDI5060-8
X4
X3
Y2
Dimensions
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
C
G
G1
X
Y3
Y1
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
X2
Y5
Y4
X1
Y7
G1
C
Y6
Y(4x)
X
G
6 of 7
May 2017
© Diodes Incorporated
DMT6005LPS
Document number: DS38867 Rev. 3 – 2
DMT6005LPS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
7 of 7
May 2017
© Diodes Incorporated
DMT6005LPS
Document number: DS38867 Rev. 3 – 2
