Diodes-Incorporated-DMT6010LFG-13
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DMT6010LFG
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low R
DS(ON)
–
Ensures On-State Losses Are Minimized
Excellent Q
GD X
R
DS(ON)
Product (FOM)
I
D
Max
BV
DSS
R
DS(ON)
Max
T
C
= +25°C
Advanced Technology for DC-DC Converters
7.5m
Ω @ V
GS
= 10V
11.5m
Ω @ V
GS
= 4.5V
30A
25A
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
60V
Occupies Just 33% of The Board Area Occupied by SO-8,
Enabling Smaller End Product
100% Unclamped Inductive Switching (UIS) Test in Production
–
Ensures More Reliable And Robust End Application
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us
or your local Diodes representative.
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) yet maintain superior switching performance, making it ideal
for high efficiency power management applications.
Mechanical Data
Applications
Case: PowerDI
®
3333-8
Synchronous Rectifier
Backlighting
Power Management Functions
DC-DC Converters
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminal Finish
–
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
PowerDI3333-8
Pin 1
S
D
S
S
G
G
D
D
D
D
S
Top View
Equivalent Circuit
Bottom View
Ordering Information
(Note 4)
Part Number
DMT6010LFG-7
DMT6010LFG-13
Case
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
PowerDI3333-8
PowerDI3333-8
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s
definitions of Halogen- and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
SG6 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 20 = 2020)
WW = Week Code (01 to 53)
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
June 2020
© Diodes Incorporated
DMT6010LFG
Document number: DS36620 Rev. 5 – 2
DMT6010LFG
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
60
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
A
= +25°C
13
11
A
A
I
D
I
D
T
A
= +70°C
Continuous Drain Current (Note 5) V
GS
= 10V
T
C
= +25°C
T
C
= +70°C
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.1mH
30
24
3
A
A
I
S
80
20
20
I
DM
I
AS
E
AS
A
Avalanche Energy, L=0.1mH
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
2.2
T
A
= +25°C
Total Power Dissipation (Note 5)
T
C
= +25°C
W
P
D
41
Steady State
55
35
3
Thermal Resistance, Junction to Ambient (Note 5)
t<10s
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
R
θ
JA
°C/W
°C
R
θ
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
60
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
μ
A
nA
V
DS
= 48V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
±100
I
GSS
ON CHARACTERISTICS
(Note 6)
Gate Threshold Voltage
0.8
—
—
—
—
6
2
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 20A
V
GS
= 0V, I
S
= 20A
7.5
11.5
1.2
Static Drain-Source On-Resistance
7.8
0.9
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 7)
Input Capacitance
—
—
—
2,090
746
—
—
—
C
iss
C
oss
C
rss
V
DS
= 30V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
38.5
V
DS
= 0V, V
GS
= 0V,
f = 1.0MHz
Gate Resistance
—
0.59
—
Ω
R
G
—
—
—
—
—
—
—
—
19.3
41.3
6.0
—
—
—
—
—
—
—
—
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Q
G
Q
G
nC
ns
V
DS
= 30V, I
D
= 20A
Q
GS
Q
GD
t
D(ON)
t
R
8.8
Turn-On Delay Time
5.7
Turn-On Rise Time
4.3
V
DD
= 30V, V
GS
= 10V,
I
D
= 20A, R
G
= 3
Ω
Turn-Off Delay Time
23.4
9.7
t
D(OFF)
t
F
Turn-Off Fall Time
Notes:
5. R
is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. R
is guaranteed by design
θ
JC
θ
JA
while R
is determined by the user’s board design.
θ
JA
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
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June 2020
© Diodes Incorporated
DMT6010LFG
Document number: DS36620 Rev. 5 – 2
DMT6010LFG
30
25
20
15
10
5
30.0
25.0
20.0
15.0
10.0
5.0
V
= 5.0V
DS
V
= 10V
GS
V
= 3.0V
GS
V
= 4.5V
GS
V
V
= 4.0V
= 3.5V
GS
GS
T
= 150°C
A
T
= 125°C
A
T
= 85°C
A
T
= 25°C
A
V
= 2.5V
T
= -55°C
GS
A
V
= 2.2V
GS
0
0.0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
2
3
4
5
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
Figure 1 Typical Output Characteristic
0.02
0.018
0.016
0.014
0.012
0.01
0.01
0.009
0.008
0.007
0.006
0.005
0.004
V
= 4.5V
GS
T =
150°C
A
V
V
= 4.5V
GS
T
= 125°C
A
T =
85°C
A
0.008
0.006
0.004
0.002
0
T
T
= 25°C
= 10V
A
GS
= -55°C
A
0
5
10
15
20
25
30
0
2
4
6
8
10 12 14 16 18 20
I
D
, DRAIN-SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
2
0.02
0.018
0.016
0.014
0.012
0.01
1.6
1.2
0.8
0.4
V
= 10V
GS
= 10A
I
V
= 5V
D
GS
= 5A
I
D
V
= 5V
GS
= 5A
I
D
0.008
0.006
0.004
0.002
0
V
= 10V
GS
= 10A
I
D
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPER
A
T
URE (
C)
T
J
, JUNCTION TEMPER
A
T
URE (
C)
Figure 6 On-Resistance Variation with
T
emperature
Figure 5 On-Resistance Variation with
T
e
mperature
3 of 7
June 2020
© Diodes Incorporated
DMT6010LFG
Document number: DS36620 Rev. 5 – 2
DMT6010LFG
30
25
20
15
10
5
2
1.8
1.6
1.4
1.2
1
T
= 150°C
A
I
= 1mA
D
T
= 125°C
A
T
= 85°C
A
I
D
=
250μA
T
A
= 25°C
A
0.8
0.6
0.4
T
= -55°C
0
0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPER
A
T
URE (
C)
V
S
D
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
Fi
g
ure 7 Gat
e
Threshol
d
Variation vs. Junction Temperature
10000
10
9
8
7
6
5
4
3
2
1
0
V
I
= 30V
DS
= 20A
D
C
C
iss
1000
100
10
oss
C
rss
f = 1MHz
1
0
5
10 15 20 25 30 35 40 45
Q
g
, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
0
10
20
30
40
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
Figure 9 Typical Junction Capacitance
100
10
P
W
= 100µs
R
DS(ON)
Limited
P
W
= 1ms
P
W
= 10ms
1
P
W
= 100ms
P
W
= 1s
P
W
= 10s
0.1
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on 1*MRP
board
0.01
0.001
DC
V
GS
= 10V
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
4 of 7
June 2020
© Diodes Incorporated
DMT6010LFG
Document number: DS36620 Rev. 5 – 2
DMT6010LFG
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
R
JA
(t) = r(t) * R
JA
122°C/W
R
JA
=
D = Single Pulse
Duty Cycle, D = t1/ t2
0.001
0.0001
0.001
0.01
0.1
1
10
100 1000
t1, PULSE DURATION TIME (sec)
F
r
T
r
R
is
Figure 12 Transient Thermal Resistance
5 of 7
June 2020
© Diodes Incorporated
DMT6010LFG
Document number: DS36620 Rev. 5 – 2
DMT6010LFG
Package Outline Dimensions
PowerDI3333-8
PowerDI3333-8
Dim Min
Max Typ
0.75 0.85 0.80
A1
0.00 0.05 0.02
A3
A1
A
A
Seating Plane
A3
b
0.203
0.27 0.37 0.32
b2
0.15 0.25 0.20
3.25 3.35 3.30
D2
2.22 2.32 2.27
3.25 3.35 3.30
E2
1.56 1.66 1.61
E3
0.79 0.89 0.84
E4
1.60 1.70 1.65
D
D
L(4x)
E4
D2
1
E
Pin #1 ID
b2(4x)
e
L
0.65
0.35 0.45 0.40
E
L1
z
0.39
0.515
E3
E2
All Dimensions in mm
L1(3x)
8
z(4x)
b
e
Suggested Pad Layout
PowerDI3333-8
Dimensions Value
(in mm)
X3
X2
C
0.650
0.420
0.420
0.230
2.370
0.700
1.850
2.250
3.700
0.540
8
X
Y4
X1
X2
X3
Y
X1
Y1
Y2
Y1
Y2
Y3
Y4
Y3
Y
1
X
C
6 of 7
June 2020
© Diodes Incorporated
DMT6010LFG
Document number: DS36620 Rev. 5 – 2
DMT6010LFG
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
7 of 7
June 2020
© Diodes Incorporated
DMT6010LFG
Document number: DS36620 Rev. 5 – 2
