Diodes-Incorporated-DMT6012LPSW-13
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DMT6012LPSW
60V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary
Features
100% Unclamped Inductive Switching (UIS) Test in Production
—
Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low R
DS(ON)
—
Minimizes On State Losses
Low Input Capacitance
I
D
BV
DSS
R
DS(ON)
T
C
= +25°C
31.5A
12m
Ω
@ V
GS
= 10V
17
mΩ @ V
GS
= 4.5V
60V
26.5A
Fast Switching Speed
ESD Protected Gate
Wettable Flank for Improved Optical Inspection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us
or your local Diodes representative.
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
®
Case: PowerDI
5060-8
Case Material:
Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Synchronous Rectifier
DC-DC Converters
Power Management
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish
—
Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8 (SWP) (Type UX)
D
S
S
D
D
D
D
Pin1
G
S
G
ESD PROTECTED
Gate Protection
Diode
S
Top View
Pin Configuration
Top View
Bottom View
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMT6012LPSW-13
Case
PowerDI5060-8 (SWP) (Type UX)
Packaging
2,500 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which c
ontain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
D
D
D
D
= Manufacturer
’
s Marking
T6012LSW = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 19 = 2019)
WW = Week Code (01 to 53)
T6012LSW
YY WW
S
S
S
G
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
November 2019
© Diodes Incorporated
DMT6012LPSW
Document number: DS42138
Rev. 2 – 2
DMT6012LPSW
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
60
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
T
C
= +70°C
13.1
10.5
A
A
Continuous Drain Current (Note 5) V
GS
= 10V
Continuous Drain Current (Note 6) V
GS
= 10V
I
D
31.5
25.2
I
D
I
DM
I
S
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.3mH
120
30
A
A
120
16.3
39.5
A
I
SM
I
AS
E
AS
A
Avalanche Energy, L = 0.3mH
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
3.1
Unit
W
T
A
= +25°C
T
C
= +25°C
40.3
17.9
7.0
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
θ
JA
P
D
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
°C/W
°C
R
θ
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
60
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 1mA
V
DS
= 48V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
µA
µA
±1 0
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1
—
9.1
2.5
12
V
mΩ
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 12.5A
V
GS
= 0V, I
S
= 20A
—
—
—
Static Drain-Source On-Resistance
12.9
0.8
17
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
1.2
1522
352
27.5
1.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
G
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
10.7
22.2
3.3
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
Q
g
nC
ns
V
DS
= 30V, I
D
= 10A
Q
gs
Q
gd
t
D(ON)
t
R
4.2
Gate-Drain Charge
4.4
Turn-On Delay Time
6.7
Turn-On Rise Time
V
DS
= 30V, V
GS
= 10V,
I
D
= 10A, R
G
= 6
Ω
25.5
12.5
25.8
15.1
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
ns
t
RR
I
F
= 10A, di/dt = 1
00A/μs
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 7
November 2019
© Diodes Incorporated
DMT6012LPSW
Document number: DS42138
Rev. 2 – 2
DMT6012LPSW
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
GS
= 3.5V
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 10V
V
DS
= 5V
V
GS
= 3.0V
T
J
= 85
℃
T
J
= 150
℃
T
J
= 125
℃
V
GS
= 2.7V
V
GS
= 2.5V
T
J
= 25
℃
T
J
= -55
℃
0
0.0
1
2
3
4
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.016
0.014
0.012
0.01
0.04
0.03
0.02
0.01
0
I
D
= 20A
V
GS
= 4.5V
I
D
= 12.5A
0.008
0.006
0.004
V
GS
= 10V
0
5
10
15
20
25
30
0
2
4
6
8
10
12
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
2.2
2
0.02
0.018
0.016
0.014
0.012
0.01
V
GS
= 10V
T
J
= 150
℃
1.8
1.6
1.4
1.2
1
V
GS
= 10V, I
D
= 20A
T
J
= 125
℃
T
J
= 85
℃
T
J
= 25
℃
T
J
= -55
℃
0.008
0.006
0.004
0.002
0
V
GS
= 4.5V, I
D
= 12.5A
0.8
0.6
-50 -25
0
25
50
75 100
125 150
0
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Junction
Temperature
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Junction Temperature
3 of 7
November 2019
© Diodes Incorporated
DMT6012LPSW
Document number: DS42138
Rev. 2 – 2
DMT6012LPSW
3
2.5
2
0.024
0.022
0.02
V
GS
= 4.5V, I
D
= 25A
0.018
0.016
0.014
0.012
0.01
I
D
= 1mA
1.5
1
I
D
= 250
μ
A
0.008
0.006
0.004
0.002
0
V
GS
= 10V, I
D
= 25A
0.5
0
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Junction
Temperature
Figure 8. Gate Threshold Variation vs. Junction
Temperature
30
25
20
15
10
5
10000
1000
100
10
V
GS
= 0V
f = 1MHz
C
iss
C
oss
C
rss
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 150
o
C
T
J
= 125
o
C
0
1
0
0.3
0.6
0.9
1.2
1.5
0
5
10 15 20 25 30 35 40 45 50 55 60
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 10. Typical Junction Capacitance
Figure 9. Diode Forward Voltage vs. Current
1000
100
10
10
8
R
DS(ON)
Limited
P
W
= 10µs
P
W
= 1µs
6
P
W
= 100µs
P
W
= 1ms
P
W
= 10ms
P
W
= 100ms
P
W
= 1s
4
1
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on Infinite
Heatsink
V
DS
= 30V, I
D
= 10A
2
0.1
0.01
V
GS
= 10V
0
0
4
8
12
16
20
24
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Q
g
(nC)
Figure 11. Gate Charge
4 of 7
November 2019
© Diodes Incorporated
DMT6012LPSW
Document number: DS42138
Rev. 2 – 2
DMT6012LPSW
1
D=0.7
D=0.5
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.01
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 7.02
℃
/W
Duty Cycle, D = t1/t2
0.001
0.00001 0.0001
0.001
0.01
0.1
1
10
100
1000
10000 100000
1000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
November 2019
© Diodes Incorporated
DMT6012LPSW
Document number: DS42138
Rev. 2 – 2
DMT6012LPSW
Package Outline Dimensions
PowerDI5060-8 (SWP) (Type UX)
D
D1
PowerDI5060-8 (SWP)
(Type UX)
Dim
Min
Max
1.10 1.00
0.05 —
0.50 0.41
0.35 0.25
Typ
A
A1
b
b2
b4
c
0.90
0
0.30
0.20
E1
E
A1
Seating Plane
1.400
1.900
c
0.25REF
0.230 0.330 0.277
5.15 BSC
e
D
D1
D2
D2a
E
E1
E2
4.70
3.56
3.78
5.10 4.90
3.96 3.76
4.18 3.98
6.40 BSC
6.00 5.80
3.86 3.66
1
1
Ø 1.000
Depth 0.07±
0.030
e/2
DETAIL A
b(8x)
L
5.60
3.46
E2a
4.195 4.595 4.395
e
k
1.27BSC
—
k
1.05
—
D2a
D2
L
0.635 0.835 0.735
0.635 0.835 0.735
0.200 0.400 0.300
0.050REF
0.025 0.225 0.125
3.205 4.005 3.605
La
L1
L1a
L4
M
A
L4
M
E2
DETAIL A
θ
θ1
10°
6°
12°
8°
11°
7°
La
All Dimensions in mm
L1
b4(8x)
Suggested Pad Layout
PowerDI5060-8 (SWP) (Type UX)
X2
Value
(in mm)
1.270
0.660
0.820
0.610
4.100
4.420
1.270
1.020
3.810
6.610
Y1
Dimensions
C
G
G1
X
X1
X2
Y
Y1
Y2
Y3
Y2
Y3
X1
G1
X (8x)
C
G
Y
6 of 7
November 2019
© Diodes Incorporated
DMT6012LPSW
Document number: DS42138
Rev. 2 – 2
DMT6012LPSW
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
7 of 7
November 2019
© Diodes Incorporated
DMT6012LPSW
Document number: DS42138
Rev. 2 – 2
Mouser Electronics
Authorized Distributor
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