Diodes-Incorporated-DMT6013LFDF-7
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DMT6013LFDF
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
I
D
Max
T
A
= +25°C
10.0A
100% Unclamped Inductive Switch (UIS) Test in Production
0.6mm Profile
—
Ideal for Low Profile Applications
PCB Footprint of 4mm
2
BV
DSS
R
DS(ON)
Max
15m
Ω
@ V
GS
= 10V
60V
8.4A
21.5
mΩ @ V
GS
= 4.5V
Low On-Resistance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Description
Case: U-DFN2020-6 (Type F)
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) yet maintain superior switching performance,
which makes it ideal for high-efficiency power management
applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
—
NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e4
Weight: 0.007 grams (Approximate)
Applications
DC/DC Converter
Adaptor Switch
Wireless Charging
D
U-DFN2020-6 (Type F)
G
Pin1
S
Pin Out
Bottom View
Top View
Bottom View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMT6013LFDF-7
DMT6013LFDF-13
Package
U-DFN2020-6 (Type F)
U-DFN2020-6 (Type F)
Quantity per Reel
3000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-free/
fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlori
ne (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
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June 2018
© Diodes Incorporated
DMT6013LFDF
D
atasheet number: DS39625 Rev. 4
–
2
DMT6013LFDF
Marking Information
Site 1:
13 = Product Type Marking Code
YM = Date Code Marking
Y =
Year (ex: F = 2018)
13
M = Month (ex: 9 = September)
Date Code Key
Year
2017
2018
2019
2020
2021
2022
2023
2024
2025
Code
E
F
G
H
I
J
K
L
M
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Site 2:
13 = Product Type Marking Code
YWX = Date Code Marking
Y =
Year (ex:
8 = 2018)
W = Week (ex: a = week27; z represents week 52 and 53)
X = Internal code (ex: U = Monday)
Date Code Key
Year
2017
2018
2019
2020
2021
2022
2023
2024
2025
Code
7
8
9
0
1
2
3
4
5
Week
Code
1-26
A-Z
27-52
a-z
53
z
Internal Code
Code
Sun
T
Mon
U
Tue
V
Wed
W
Thu
X
Fri
Y
Sat
Z
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June 2018
© Diodes Incorporated
DMT6013LFDF
D
atasheet number: DS39625 Rev. 4
–
2
DMT6013LFDF
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
60
Unit
V
Gate-Source Voltage
±20
V
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
10.0
8.0
A
Continuous Drain Current (Note 6) V
GS
= 10V
I
D
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Body Diode Continuous Current
60
10
A
A
I
DM
I
S
Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
60
11.7
6.8
A
I
SM
I
AS
E
AS
A
Avalanche Energy (Note 7) L = 0.1mH
mJ
Thermal Characteristics
Characteristic
Symbol
Value
0.9
Unit
W
T
A
= +25°C
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
P
D
R
ϴ
JA
P
D
0.58
139
T
A
= +70°C
°C/W
W
1.9
T
A
= +25°C
T
A
= +70°C
1.2
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 6)
67
°C/W
W
R
ϴ
JA
P
D
10.8
T
C
= +25°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
11.6
°C/W
°C
R
ϴ
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
60
V
µA
nA
1
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 48V, V
GS
= 0V
V
GS
=
20V, V
DS
= 0V
100
I
GSS
ON CHARACTERISTICS
(Note 8)
Gate Threshold Voltage
1
2.3
15
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 8.5A
V
GS
= 4.5V, I
D
= 6A
V
GS
= 0V, I
S
= 1A
12.2
16.9
0.7
Static Drain-Source On-Resistance
21.5
1.2
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance
1081
253
22
C
iss
C
oss
C
rss
R
g
V
DS
= 30V, V
GS
= 0V
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
1.22
15
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Q
g
8.5
Q
g
nC
V
DS
= 30V, I
D
= 10A
2.2
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
4.4
Turn-On Delay Time
4.3
Turn-On Rise Time
6.5
V
GS
= 10V, V
DD
= 30V,
R
g
= 6
Ω
,I
D
= 10A
ns
Turn-Off Delay Time
15.8
6.1
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
19.7
9.5
ns
t
RR
I
S
= 10A, di/dt = 100A/
μ
s
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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June 2018
© Diodes Incorporated
DMT6013LFDF
D
atasheet number: DS39625 Rev. 4
–
2
DMT6013LFDF
30
25
20
15
10
5
30
25
20
15
10
5
V
= 10V
GS
V
V
= 5
.
0
V
DS
V
= 3
.
5
V
GS
= 6V
GS
V
= 4
.
5
V
GS
V
= 4V
GS
T
= 150°C
V
= 3V
J
GS
T
= 25°C
T
= 125°C
J
J
T
= 85°C
J
T
= -55°C
J
V
= 2
.
5
V
V
= 2
.
2
V
GS
GS
0
0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 1
T
y
pical Output Characteristic
Figure 2
T
y
pical Transfer Characteristics
0.02
0.1
0.08
0.06
0.04
0.02
0
0.018
I
D
=8.5A
I
V
= 4
.
5
V
GS
0.016
0.014
0.012
0.01
I
= 6A
D
V
= 10V
GS
0.008
0.006
0
4
8
12
16
20
0
5
10
15
20
25
30
V
G
S
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 4
T
y
pical Drain-Source On-Resistance
vs. Gate-Source Voltage
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
Dr
a
in Current and Gate Voltage
0.022
0.02
1.8
1.6
1.4
1.2
V
= 10V
GS
V
GS
=10V,
T
= 150°C
= 125°C
J
I =8.5A
D
T
0.018
0.016
0.014
0.012
0.01
J
V
= 4
.
5
V
GS
T
= 85°C
= 25°C
= -55°C
J
I
= 6A
D
T
J
1
T
J
0.008
0.006
0.004
0.8
0.6
0
5
10
15
20
25
30
–
5
0
–
2
5
0
25
50
75 100 125 150
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with
T
e
m
p
e
r
a
ture
Figure 5
T
y
pical On-Resistance vs.
Drain Current and
T
e
m
p
e
r
a
ture
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June 2018
© Diodes Incorporated
DMT6013LFDF
D
atasheet number: DS39625 Rev. 4
–
2
DMT6013LFDF
2.2
2
0.03
0.025
0.02
0.015
0.01
0.005
0
V
= 4
.
5
V
= 6A
GS
I
D
1.8
1.6
1.4
1.2
1
I
= 1mA
D
I
= 250µA
D
V
GS
=10V,
I
D
=8.5A
0.8
-50 -25
0
25
50
75 100 125 150
–
5
0
–
2
5
0
25
50
75 100 125
150
T
J
, JUNCTION TEMPERATURE
C)
Figure 8 Gate Threshold Variation vs. Junction Temperature
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
30
25
20
15
10
5
10000
f=
1
MHz
C
iss
1000
C
o
s
s
T
J
= 150°C
J
100
T
= 25°C
J
T
= 125°C
= 85°C
T
= -55°C
T
J
J
C
r
s
s
10
1
0
0
0.3
0.6
0.9
1.2
1.5
0
10
20
30
40
50
60
V
SD
, SOURCE-DRAIN VOL
T
AGE
(
V)
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 9 Diode Forward Voltage vs. Current
Figure 10
T
y
pical Junction Capacitance
10
8
100
10
1
R
D
S
(
on)
Limi
t
e
d
P
= 100µs
W
6
4
2
DC
P
= 10s
W
V
I
= 30V
DS
P
= 1s
W
= 10A
D
P
= 100ms
W
T
J
(max)
= 150°C
T
C
= 25°C
P
= 10ms
0.1
W
P
= 1ms
W
V
GS
= 10V
Single Pul
s
e
DUT on 1 * MRP Board
0.01
0
0
0.01
0.1
1
10
100
3
6
9
12
15
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 12 SOA, Safe Operation Area
Q
g
, TO
T
AL GATE CHARGE (nC)
Figure 11 Gate Charge
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June 2018
© Diodes Incorporated
DMT6013LFDF
D
atasheet number: DS39625 Rev. 4
–
2
DMT6013LFDF
1
D = 0
.
9
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
0
5
D = 0
.
0
2
D = 0
.
0
1
D = 0
.
0
05
0.01
0.001
R
JA
(t) = r(t) *
R
JA
R
JA
= 137°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
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June 2018
© Diodes Incorporated
DMT6013LFDF
D
atasheet number: DS39625 Rev. 4
–
2
DMT6013LFDF
Package Outline Dimensions
U-DFN2020-6 (Type F)
U-DFN2020-6
(Type F)
A3
A1
Dim
A
A1
A3
b
Min Max
0.57 0.63
0.00 0.05
Typ
0.60
0.03
0.15
0.30
2.00
0.95
0.38
2.00
1.15
0.70
A
Seating Plane
–
–
0.25 0.35
1.95 2.05
0.85 1.05
D
D
D2
e3
k2
e4
D2a
0.33 0.43
E
E2
E2a
e
1.95 2.05
1.05 1.25
0.65 0.75
0.65 BSC
D2a
E2a
z2
e2
e3
e4
k
0.863 BSC
0.70 BSC
0.325 BSC
0.37 BSC
D2
E
E2
k1
k2
L
0.15 BSC
0.36 BSC
0.225 0.325
0.275
0.20 BSC
k1
e2
L
k
z1
z
z1
z2
0.110 BSC
0.20 BSC
e
b
All Dimensions in mm
z(4x)
Suggested Pad Layout
U-DFN2020-6 (Type F)
X3
Y
C
X
Value
Dimensions
(in mm)
0.650
0.400
0.480
0.950
1.700
0.425
0.800
1.150
1.450
2.300
C
X
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y2
Y1 Y4
X1
Pin1
X2
7 of 8
June 2018
© Diodes Incorporated
DMT6013LFDF
D
atasheet number: DS39625 Rev. 4
–
2
DMT6013LFDF
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
8 of 8
June 2018
© Diodes Incorporated
DMT6013LFDF
D
atasheet number: DS39625 Rev. 4
–
2
Mouser Electronics
Authorized Distributor
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