Diodes-Incorporated-DMT67M8LPSW-13
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DMT67M8LPSW
Green
60V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary
Features
I
D MAX
T
C
= +25°C
82A
100% Unclamped Inductive Switching (UIS) Test in Production
—
Ensures More Reliable and Robust End Application.
High Conversion Efficiency
BV
DSS
R
DS(ON) MAX
6.2m
Ω
@ V
GS
= 10V
8.5
mΩ @ V
GS
= 4.5V
60V
70A
Low R
DS(ON)
—
Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Wettable Flank
for Improved Optical Inspection
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
Mechanical Data
®
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) yet maintain superior switching performance, making it ideal
for high-efficiency power management applications.
Case: PowerDI
5060-8
Case Material:
Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish
—
Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Synchronous Rectifier
DC-DC Converters
Power Management
PowerDI5060-8 (SWP) (Type Q)
D
S
S
D
D
D
D
Pin1
G
S
G
ESD PROTECTED
Gate Protection
Diode
S
Top View
Pin Configuration
Top View
Bottom View
Internal Schematic
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMT67M8LPSW-13
PowerDI5060-8 (SWP) (Type Q)
2500 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are d
efined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
D
D
D
D
= Manufacturer
’
s Marking
T67M8LSW = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 19 = 2019)
WW = Week Code (01 to 53)
T67M8LSW
YY WW
S
S
S
G
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
August 2019
© Diodes Incorporated
DMT67M8LPSW
Document Number: DS41609 Rev. 3 – 2
DMT67M8LPSW
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
60
Unit
V
Gate-Source Voltage
±20
V
V
GSS
17.3
13.8
82
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
T
C
= +70°C
A
A
Continuous Drain Current (Note 5) V
GS
= 10V
Continuous Drain Current (Note 6) V
GS
= 10V
I
D
I
D
65.6
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.3mH
320
82
A
A
I
DM
I
S
320
23.7
84.5
A
I
SM
I
AS
E
AS
A
Avalanche Energy, L = 0.3mH
mJ
Thermal Characteristics
Characteristic
Symbol
Value
2.8
Unit
Total Power Dissipation (Note 5)
W
°C/W
W
T
A
= +25°C
T
C
= +25°C
P
D
R
θ
JA
45
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
62.5
2
P
D
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
°C/W
°C
R
θ
JC
T
J
,
T
STG
-55 to +150
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
60
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 1mA
V
DS
= 48V, V
GS
= 0V
µA
µA
±1 0
I
GSS
V
GS
=
20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.2
—
—
—
1.64
4.4
6.2
0.7
2.5
6.2
8.5
1.2
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 20A
V
GS
= 0V, I
S
= 1A
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
2130
786
70
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
0.6
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
20
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
37.5
5.4
Q
g
nC
V
DS
= 30V, I
D
= 20A
Q
gs
Q
gd
t
D(ON)
t
R
9.5
Gate-Drain Charge
5.5
Turn-On Delay Time
6.8
Turn-On Rise Time
V
DD
= 30V, V
GS
= 10V,
I
D
= 20A, R
g
= 3
Ω
ns
22.1
10.8
26.9
56.8
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
ns
t
RR
I
F
= 20A, di/dt = 3
00A/μs
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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August 2019
© Diodes Incorporated
DMT67M8LPSW
Document Number: DS41609 Rev. 3 – 2
DMT67M8LPSW
30
25
20
15
10
5
50.0
40.0
30.0
20.0
10.0
0.0
V
DS
= 5V
V
GS
=4.0V
V
GS
= 4.5V
V
GS
= 6.0V
V
GS
= 10.0V
V
GS
= 3.2V
T
J
=125
℃
T
J
=85
℃
T
J
=25
℃
V
GS
= 3.0V
V
GS
= 2.8V
T
J
=150
℃
V
GS
= 2.6V
V
GS
= 2.4V
T
J
=-55
℃
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
120
90
60
30
0
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
V
GS
= 4.5V
V
GS
= 10V
I
D
= 20A
2
4
6
8
10
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
12
14
16
18
20
0
5
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
2
1.8
1.6
1.4
1.2
1
12
V
GS
= 10V
V
GS
= 10V, I
D
= 20A
10
8
T
J
=125
℃
T
J
=150
℃
6
T
J
=85
℃
4
T
J
=25
℃
T
J
=-55
℃
0.8
0.6
0.4
2
V
GS
= 4.5V, I
D
= 20A
0
-50
-25
0
25
50
75
100 125 150
0
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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© Diodes Incorporated
DMT67M8LPSW
Document Number: DS41609 Rev. 3 – 2
DMT67M8LPSW
2.5
2
15
12
9
I
D
= 1mA
1.5
1
V
GS
= 4.5V, I
D
= 20A
I
D
= 250
μ
A
6
V
GS
= 10V, I
D
= 20A
3
0.5
0
0
-50
-25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
30
25
20
15
10
5
10000
1000
100
10
f=1MHz
C
iss
V
GS
= 0V
C
oss
C
rss
T
J
= 85
℃
T
J
= 125
℃
T
J
= 25
℃
T
J
= 150
℃
T
J
= -55
℃
0
1
0
0.3
0.6
0.9
1.2
0
10
20
30
40
50
60
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
1000
100
10
R
DS(ON)
Limited
P
W
=1µs
P
W
=10
m
s
6
P
W
=100
m
s
1
4
P
W
=1ms
P
W
=10ms
P
W
=100ms
DC
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on Infinite
Heatsink
V
DS
= 30V, I
D
= 20A
0.1
0.01
2
V
GS
= 10V
0
0.1
1
10
100
0
5
10
15
20
25
30
35
40
Qg (nC)
Figure 11. Gate Charge
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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August 2019
© Diodes Incorporated
DMT67M8LPSW
Document Number: DS41609 Rev. 3 – 2
DMT67M8LPSW
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.01
0.001
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 2
℃
/W
Duty Cycle, D = t1 / t2
1E-06 1E-05
0.0001 0.001
0.01
0.1
1
10
100
1000 10000
100000 1000000
t1, PULSE DURATION TIME (sec)
Figure 13.Transient Thermal Resistance
5 of 7
August 2019
© Diodes Incorporated
DMT67M8LPSW
Document Number: DS41609 Rev. 3 – 2
DMT67M8LPSW
Package Outline Dimensions
PowerDI5060-8 (SWP) (Type Q)
D
D1
PowerDI5060-8 (SWP)
(Type Q)
8
Dim
Min
Max
1.10 1.00
0.05 —
0.50 0.41
0.35 0.25
Typ
A
A1
b
b2
b4
c
0.90
0
0.30
0.20
E1
E
1.400
A1
Seating Plane
1.900
0.25REF
c
0.230 0.330 0.277
5.15 BSC
D
e
D1
D2
D2a
E
E1
E2
4.70
3.56
3.78
5.10 4.90
3.96 3.76
4.18 3.98
6.40 BSC
6.00 5.80
3.86 3.66
1
1
Ø 0.986
Depth 0.07±
0.030
e/2
DETAIL A
b( 8x)
5.60
3.46
E2a
4.195 4.595 4.395
L
e
k
1.27BSC
—
b2( 2x)
1.05
—
k
D2a
D2
L
0.635 0.835 0.735
0.635 0.835 0.735
0.200 0.400 0.300
0.050REF
0.025 0.225 0.125
3.205 4.005 3.605
La
L1
L1a
L4
M
A
E2
L4
E2a
M
L1
DETAIL A
θ
θ1
10°
6°
12°
8°
11°
7°
La
8
All Dimensions in mm
b4( 8x)
L1a( 8x)
Suggested Pad Layout
PowerDI5060-8 (SWP) (Type Q)
X2
Value
Y1
Dimensions
(in mm)
1.270
0.660
0.820
0.610
4.100
4.420
1.270
1.020
3.810
6.610
C
G
G1
X
X1
X2
Y
Y1
Y2
Y3
Y2
Y3
X1
G1
X (
8x)
C
G
Y
6 of 7
August 2019
© Diodes Incorporated
DMT67M8LPSW
Document Number: DS41609 Rev. 3 – 2
DMT67M8LPSW
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
7 of 7
August 2019
© Diodes Incorporated
DMT67M8LPSW
Document Number: DS41609 Rev. 3 – 2
