Diodes-Incorporated-DMT68M8LFV-13
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DMT68M8LFV
60V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8
Product Summary
Features and Benefits
100% Unclamped Inductive Switching (UIS) Test in Production
–
Ensures More Reliable And Robust End Application
I
D
Max
T
C
= +25°C
BV
DSS
R
DS(ON)
Max
Low R
DS(ON)
–
Ensures On-State Losses are Minimized
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
9.5m
Ω
@ V
GS
= 10V
13.3m
Ω
@ V
GS
= 4.5V
54.1A
45.7A
60V
Occupies just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
®
Case: PowerDI
3333-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
Motor Control
DC-DC Converters
Power Management
PowerDI3333-8 (Type UX)
Pin1
S
S
S
G
D
D
ESD PROTECTED
D
D
Equivalent Circuit
Top View
Bottom View
Ordering Information
(Note 4)
Part Number
DMT68M8LFV-7
DMT68M8LFV-13
Case
Packaging
2000/Tape & Reel
3000/Tape & Reel
PowerDI3333-8 (Type UX)
PowerDI3333-8 (Type UX)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm b
romine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/
Marking Information
688= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 18 = 2018)
WW = Week Code (01 to 53)
688
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
November 2018
© Diodes Incorporated
DMT68M8LFV
Document number: DS40626 Rev. 2 – 2
DMT68M8LFV
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
60
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
C
= +25°C
T
C
= +70°C
54.1
43.3
A
Continuous Drain Current (Note 6) V
GS
= 10V
I
D
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Body Diode Forward Current (10
s Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.1mH
210
50
A
A
I
DM
I
S
210
28
A
I
SM
I
AS
E
AS
A
Avalanche Energy, L = 0.1mH
39
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
R
Value
2.7
Unit
W
Total Power Dissipation (Note 5)
T
A
= +25°C
T
C
= +25°C
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
47
41.7
°C/W
W
JA
P
D
R
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
3
°C/W
°C
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
60
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
µA
µA
V
DS
= 48V, V
GS
= 0V
±10
I
GSS
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1
—
3
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 13.5A
V
GS
= 4.5V, I
D
= 11.5A
V
GS
= 0V, I
S
= 13.5A
—
—
—
6.6
9.1
0.8
9.5
13.3
1.2
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2078
605
44
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1.71
30
V
DS
= 0V, V
GS
= 0V, f = 1MHz
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Q
g
14.4
4.1
Q
g
V
DD
= 30V, I
D
= 20A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
6.7
Turn-On Delay Time
5.2
Turn-On Rise Time
9.6
V
DD
= 30V, V
GS
= 10V,
I
D
= 20A, R
g
= 3.3
Ω
Turn-Off Delay Time
20.5
8.9
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
32.5
22.8
t
RR
I
F
= 20A, di/dt = 10
0A/μs
Q
RR
Note:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad)
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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November 2018
© Diodes Incorporated
DMT68M8LFV
Document number: DS40626 Rev. 2 – 2
DMT68M8LFV
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
GS
= 10.0V
V
GS
= 4.5V
V
DS
= 5V
V
GS
= 4.0V
V
GS
= 3.0V
V
GS
= 3.5V
V
GS
= 2.8V
150
℃
25
℃
V
GS
= 2.6V
V
GS
= 2.4V
125
℃
85
℃
V
GS
= 2.2V
-55
℃
0
0.0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1.Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
50
45
40
35
30
25
20
15
10
5
12
10
8
V
GS
= 4.5V
V
GS
= 10.0V
I
D
= 13.5A
I
D
= 11.5A
6
4
2
0
0
0
2
4
6
8
10 12 14 16 18 20
0
5
10
15
20
25
30
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 4. Typical Transfer Characteristic
V
GS
= 10.0V, I
D
= 13.5A
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
1.8
1.6
1.4
1.2
1
15
V
GS
= 10V
150
℃
12
9
125
℃
85
℃
V
GS
= 4.5V, I
D
= 11.5A
25
℃
6
0.8
0.6
0.4
-55
℃
3
0
-50 -25
0
25
50
75 100
125 150
0
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
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November 2018
© Diodes Incorporated
DMT68M8LFV
Document number: DS40626 Rev. 2 – 2
DMT68M8LFV
2.5
2
20
18
16
14
12
10
8
I
D
= 1mA
V
GS
= 4.5V, I
D
= 11.5A
1.5
1
I
D
= 250
μ
A
6
V
GS
= 10.0V, I
D
= 13.5A
0.5
0
4
2
0
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs.
JunctionTemperature
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with
Temperature
30
10000
1000
100
10
f=1MHz
V
GS
= 0V
C
iss
25
20
15
10
5
C
oss
C
rss
T
A
= 150
℃
T
A
= 125
℃
T
A
= 85
℃
T
A
= 25
℃
T
A
= -55
℃
1
0
0
10
20
30
40
50
60
0
0.3
0.6
0.9
1.2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1000
100
10
10
8
R
DS(ON)
LIMITED
P
W
=1
μ
s
P
W
=10
μ
s
P
W
=100
μ
s
P
W
=1ms
P
W
=10ms
P
W
=100ms
P
W
=1s
6
1
4
T
J(MAX)
=150
℃
T
C
=25
℃
V
DS
= 30V, I
D
= 20A
Single Pulse
DUT on infinite
heatsink
0.1
0.01
2
V
GS
=10V
0
0.1
1
10
100
0
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Qg (nC)
Figure 11. Gate Charge
4 of 7
November 2018
© Diodes Incorporated
DMT68M8LFV
Document number: DS40626 Rev. 2 – 2
DMT68M8LFV
1
D=0.9
D=0.7
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.01
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 3.1
℃
/W
Duty Cycle, D = t1 / t2
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10 100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
November 2018
© Diodes Incorporated
DMT68M8LFV
Document number: DS40626 Rev. 2 – 2
DMT68M8LFV
Package Outline Dimensions
PowerDI3333-8 (Type UX)
D
D1
A
A1
PowerDI3333-8
(Type UX)
Dim
Min
Max
0.85 0.80
0.05 —
Typ
E1 E
A
A1
b
c
D
D1
D2
E
E1
E2
E2a
E2b
e
0.75
0.00
0.25
0.10
3.20
2.95
2.30
3.20
2.95
1.60
0.95
0.10
0.40 0.32
0.25 0.15
3.40 3.30
3.15 3.05
2.70 2.50
3.40 3.30
3.15 3.05
2.00 1.80
1.35 1.15
0.30 0.20
0
c
L
E2a
E2b
E2
0.65 BSC
k
L
θ
0.50
0.30
0°
0.90 0.70
0.50 0.40
D2
k
12°
10°
L
All Dimensions in mm
b
e
Suggested Pad Layout
PowerDI3333-8 (Type UX)
X3
X2
8
Y4
Dimensions Value
(in mm)
C
X
0.650
0.420
0.420
0.230
2.370
0.700
1.850
2.250
3.700
0.540
X1
Y1
Y2
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y
1
X
C
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November 2018
© Diodes Incorporated
DMT68M8LFV
Document number: DS40626 Rev. 2 – 2
DMT68M8LFV
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
7 of 7
November 2018
© Diodes Incorporated
DMT68M8LFV
Document number: DS40626 Rev. 2 – 2
Mouser Electronics
Authorized Distributor
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