Diodes-Incorporated-DMT68M8LPS-13
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DMT68M8LPS
60V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI5060-8
Product Summary
Features and Benefits
•
100% Unclamped Inductive Switching (UIS) Test in Production –
Ensures More Reliable and Robust End Application
High Conversion Efficiency
I
D
BV
DSS
R
DS(ON)
T
C
= +25°C
69.2A
•
•
•
•
•
•
•
7.9m
Ω
@ V
GS
= 10V
10.8
mΩ @ V
GS
= 4.5V
60V
Low R
DS(ON)
—Minimizes On State Losses
Low Input Capacitance
59.2A
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
Mechanical Data
®
•
•
Case: PowerDI
5060-8
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) yet maintain superior switching performance, making it ideal
for high-efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish—Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
•
•
•
•
•
Synchronous Rectifier
DC-DC Converters
Power Management
•
PowerDI5060-8
D
S
S
D
D
D
D
Pin1
S
G
ESD PROTECTED
G
Gate Protection
Diode
S
Top View
Pin Configuration
Top View
Bottom View
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMT68M8LPS-13
Case
PowerDI5060-8
Packaging
2500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. Se
e https://www.diodes.com/quality/lead-free/ fo
r more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
D
D
D
D
= Manufacturer’s Marking
T68M8LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 18 = 2018)
WW = Week Code (01 to 53)
T68M8LS
YY WW
S
S
S
G
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
September 2018
© Diodes Incorporated
DMT68M8LPS
Document number: DS41267
Rev. 2 – 2
DMT68M8LPS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
60
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
A
= +25°C
T
A
= +70°C
14.1
11.2
A
A
Continuous Drain Current (Note 5) V
GS
= 10V
Continuous Drain Current (Note 6) V
GS
= 10V
I
D
T
C
= +25°C
69.2
55.4
I
D
I
DM
I
S
T
C
= +70°C
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.1mH
270
69
A
A
270
28.1
39.5
A
I
SM
I
AS
E
AS
A
Avalanche Energy, L = 0.1mH
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
2.4
Unit
W
T
A
= +25°C
T
C
= +25°C
53
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
ϴ
JA
P
D
56.8
2.2
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
°C/W
°C
R
ϴ
JC
T
J,
T
STG
-55 to +150
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
60
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 1mA
V
DS
= 48V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
µA
µA
±10
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1
—
3
V
mΩ
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 20A
V
GS
= 0V, I
S
= 1A
5.9
7.8
0.7
—
—
—
7.9
10.8
1.2
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
2078
605
44
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
G
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
1.71
14.4
30
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
Q
g
nC
ns
V
DS
= 30V, I
D
= 20A
4.1
Q
gs
Q
gd
t
D(ON)
t
R
6.7
Gate-Drain Charge
5.2
Turn-On Delay Time
9.6
Turn-On Rise Time
V
DS
= 30V, V
GS
= 10V,
I
D
= 20A, R
G
= 3.3
Ω
20.5
8.9
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
32.5
22.8
Reverse Recovery Time
Reverse Recovery Charge
ns
t
RR
I
F
= 20A, di/dt = 1
00A/μs
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 7
September 2018
© Diodes Incorporated
DMT68M8LPS
Document number: DS41267
Rev. 2 – 2
DMT68M8LPS
30
25
30
25
V
= 5V
DS
V
= 3V
GS
V
= 3
.
5
V
= 4V
GS
GS
V
V
V
= 4
.
5
V
= 10V
GS
V
= 2
.
8
V
GS
GS
20
15
10
20
15
T
= 85°C
A
T
A
= 125°C
A
10
5
T
= 150°C
T
= 25°C
A
V
V
= 2
.
4
V
= 2
.
2
V
4
GS
5
0
T
= -55°C
GS
A
0
1
1.5
2
2.5
3
3.5
0
1
2
3
5
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 1
T
y
pical Output Characteristic
V
G
S
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 2
T
y
pical Transfer Characteristics
0.01
0.1
0.009
0.08
0.06
0.04
I
= 20A
D
0.008
0.007
0.006
V
GS
= 4
.
5
V
V
GS
= 10V
0.02
0
0.005
0.004
0
4
8
12
16
20
0
5
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
Dr
a
in Current and Gate Voltage
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 4
T
y
pical Drain-Source On-Resistance
vs. Gate-Source Voltage
0.012
0.01
1.8
1.6
1.4
V
= 10V
GS
V
= 10V
= 20A
GS
T
= 150°C
= 125°C
A
I
D
T
A
T
= 85°C
A
V
= 4
.
5
V
= 20A
0.008
0.006
GS
I
D
1.2
1
T
= 25°C
A
T
= -55°C
A
0.004
0.002
0.8
0.6
0
5
10
15
20
25
30
–
5
0
–
2
5
0
25
50
75 100 125
150
I
D
, DRAIN CURRENT (A)
Figure 5
T
y
pical On-Resistance vs.
Dr
a
in Current and
T
e
m
p
e
r
a
ture
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with
T
e
m
p
e
r
a
ture
3 of 7
September 2018
© Diodes Incorporated
DMT68M8LPS
Document number: DS41267
Rev. 2 – 2
DMT68M8LPS
0.016
0.014
2
1.8
0.012
0.01
1.6
1.4
I
= 1mA
D
I
= 250µA
V
= 4
.
5
V
= 20A
D
GS
I
D
0.008
0.006
0.004
1.2
1
V
= 10V
GS
= 20A
I
D
0.8
0.002
0
0.6
0.4
–
5
0
–
2
5
0
25
50
75 100
125 150
–
5
0
–
2
5
0
25
50
75 100 125
150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 8 Gate Threshold Variation vs. Ambient
T
e
m
p
e
r
a
ture
10000
30
25
C
iss
1000
100
C
o
s
s
20
15
10
C
r
s
s
T
= 85°C
A
T
= 25°C
A
T
= 125°C
10
1
A
5
0
T
= 150°C
A
T
= -55°C
A
0
0.3
0.6
0.9
1.2
0
10
20
30
40
50
60
V
S
D
, SOURCE-DRAIN VOL
T
AGE
(
V)
Figure 9 Diode Forward Voltage vs. Current
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 10
T
y
pical Junction Capacitance
10
8
1000
100
P
= 1µs
W
DC
6
10
1
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
P
= 100µs
W
4
V
= 30V
DS
P
= 10µs
W
I
= 20A
D
T
T
V
= 150°C
= 25°C
= 10V
2
0
J( m
a
x
)
0.1
C
GS
Single Pulse
DUT on
I
n
f
i
ni
t
e
H
ea
t
sink
0.01
0
5
10
15
20
25
30
0.1
1
10
100
Q
g
, TO
T
AL GATE CHARGE (nC)
Figure 11 Gate Charge
-V
DS
DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 12 SOA, Safe Operation Area
4 of 7
September 2018
© Diodes Incorporated
DMT68M8LPS
Document number: DS41267
Rev. 2 – 2
DMT68M8LPS
1
D = 0
.
9
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
0
5
D = 0
.
0
2
D = 0
.
0
1
D = 0
.
0
05
0.01
R
(t) = r(t) * R
θ
J
A
θ
J
A
D = Single Pulse
R
= 2
.
2
°C
/
W
θ
J
A
Du
t
y
C
ycle, D = t1/ t2
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
5 of 7
September 2018
© Diodes Incorporated
DMT68M8LPS
Document number: DS41267
Rev. 2 – 2
DMT68M8LPS
Package Outline Dimensions
PowerDI5060-8
PowerDI5060-8
Dim
A
A1
b
b2
b3
c
Min
0.90
0.00
0.33
0.200
0.40
0.230
Max
1.10
0.05
0.51
0.350 0.273
0.80 0.60
0.330 0.277
5.15 BSC
5.10
4.10
4.30
6.15 BSC
6.00
3.68
4.39
1.27 BSC
0.71
—
0.71
0.200 0.175
4.035 3.635
1.40
12°
8°
Typ
1.00
—
D
D1
Detail A
c
0( 4X)
A1
0.41
E1 E
D
e
D1
D2
D3
E
E1
E2
E3
e
G
K
L
L1
M
4.70
3.70
3.90
4.90
3.90
4.10
01 (
4X)
1
5.60
3.28
3.99
5.80
3.48
4.19
b (
8X)
L
e/2
1
b2 (
4X)
D3
K
0.51
0.51
0.51
0.100
3.235
1.00
10°
0.61
—
0.61
A
D2
b3 (
4X)
E3
E2
M
M1
M1
Θ
Θ1
1.21
11°
7°
Detail A
G
L1
6°
All Dimensions in mm
Suggested Pad Layout
PowerDI5060-8
X4
X3
Y2
Dimensions
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
C
G
G1
X
Y3
Y1
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
X2
Y5
Y4
X1
Y7
G1
C
Y6
Y( 4x)
X
G
6 of 7
September 2018
© Diodes Incorporated
DMT68M8LPS
Document number: DS41267
Rev. 2 – 2
DMT68M8LPS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
7 of 7
September 2018
© Diodes Incorporated
DMT68M8LPS
Document number: DS41267
Rev. 2 – 2
Mouser Electronics
Authorized Distributor
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