Diodes-Incorporated-DMT68M8LSS-13
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DMT68M8LSS
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
High Conversion Efficiency
I
D
Max
BV
DSS
R
DS(ON)
Max
T
A
= +25°C
Low R
DS(ON)
–
Minimizes On-State Losses
Low Input Capacitance
8.5m
Ω @ V
GS
= 10V
12m
Ω
@ V
GS
= 4.5V
12.1A
10.2A
60V
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
High Frequency Switching
Synchronous Rectification
DC-DC Converters
D
SO-8
S
S
S
G
D
D
G
D
ESD PROTECTED
D
Gate Protection
S
Diode
Top View
Internal Schematic
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMT68M8LSS-13
Case
SO-8
Packaging
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html
for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br
+ Cl) and
<1000ppm antimony compounds.
Marking Information
8
5
= Manufacturer’s Marking
T68M8LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 17 = 2017)
WW = Week (01 to 53)
T68M8LS
YY WW
1
4
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May 2017
© Diodes Incorporated
DMT68M8LSS
Document number: DS39396 Rev. 2 – 2
DMT68M8LSS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
60
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
A
= +25°C
12.1
9.7
A
A
I
D
T
A
= +70°C
Continuous Drain Current (Note 6) V
GS
= 10V
T
C
= +25°C
28.9
9.7
I
D
I
DM
I
S
T
C
= +70°C
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.3mH
100
20
A
A
A
A
A
100
19
I
SM
I
AS
E
AS
54.2
Avalanche Energy, L = 0.3mH
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
R
Value
1.3
Unit
W
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
93
°C/W
W
JA
1.9
P
D
R
θ
JA
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
67
°C/W
°C/W
°C
11.7
R
θ
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
60
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 1mA
μ
A
μ
A
V
DS
= 48V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
±10
I
GSS
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
1
—
3
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 13.5A
V
GS
= 4.5V, I
D
= 11.5A
V
GS
= 0V, I
S
= 20A
—
—
—
6.7
8.9
0.9
8.5
12
1.2
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2107
634
48
C
iss
C
oss
C
rss
R
g
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
1.8
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
31.8
15.6
3.4
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Q
g
Q
g
nC
ns
V
DD
= 30V, I
D
= 20A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
6.6
Turn-On Delay Time
4.6
Turn-On Rise Time
7.9
V
DD
= 30V, V
GS
= 10V,
I
D
= 20A, R
g
= 3.3
Ω
Turn-Off Delay Time
25.2
13.9
19.3
38.1
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
ns
t
RR
I
F
= 15A, di/dt = 50
0A/μs
Body Diode Reverse Recovery Charge
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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May 2017
© Diodes Incorporated
DMT68M8LSS
Document number: DS39396 Rev. 2 – 2
DMT68M8LSS
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
GS
= 3.0V
V
DS
= 5V
V
GS
= 3.5V
V
GS
=4.5V
V
GS
= 10.0V
V
GS
=2.8V
T
J
=125
℃
V
GS
= 2.6V
V
GS
= 2.4V
T
J
=85
℃
T
J
=25
℃
T
J
=150
℃
V
GS
= 2.2V
T
J
=-55
℃
0.0
0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0.01
0.009
0.008
0.007
0.006
0.005
I
D
= 13.5A
I
D
= 11.5A
V
GS
= 4.5V
V
GS
= 10V
0
5
10
15
20
25
30
0
4
8
12
16
20
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
1.8
1.6
1.4
1.2
1
0.014
0.012
0.01
V
GS
= 10V
T
J
=150
℃
V
GS
= 10V, I
D
= 13.5A
T
J
=125
℃
T
J
=85
℃
T
J
=25
℃
0.008
0.006
0.004
0.002
V
GS
= 4.5V, I
D
= 11.5A
T
J
=-55
℃
0.8
0.6
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 6. On-Resistance Variation with Junction
Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
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© Diodes Incorporated
DMT68M8LSS
Document number: DS39396 Rev. 2 – 2
DMT68M8LSS
2
1.8
1.6
1.4
1.2
1
0.02
0.015
0.01
0.005
0
I
D
= 1mA
V
GS
= 4.5V, I
D
= 11.5A
I
D
= 250
μ
A
V
GS
= 10V, I
D
= 13.5A
0.8
0.6
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
Figure 7. On-Resistance Variation with Junction
Temperature
30
25
20
15
10
5
10000
1000
100
10
f=1MHz
C
iss
V
GS
= 0V
C
oss
T
J
= 85
o
C
C
rss
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 150
o
C
0
1
0
0.3
0.6
0.9
1.2
1.5
0
10
20
30
40
50
60
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Typical Junction Capacitance
100
10
10
8
R
DS(ON)
Limited
P
W
=100µs
6
P
W
=1ms
1
P
W
=10ms
P
W
=100ms
P
W
=1s
4
V
DS
= 30V, I
D
= 20A
0.1
0.01
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on 1*MRP Board
V
GS
= 10V
2
P
W
=10s
10
DC
0
0.01
0.1
1
100
0
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Qg (nC)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
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DMT68M8LSS
Document number: DS39396 Rev. 2 – 2
DMT68M8LSS
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
0.001
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 98
℃
/W
Duty Cycle, D = t1 / t2
D=Single Pulse
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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© Diodes Incorporated
DMT68M8LSS
Document number: DS39396 Rev. 2 – 2
DMT68M8LSS
Package Outline Dimensions
SO-8
SO-8
Dim
A
A1
b
c
D
Min
1.40
0.10
0.30
0.15
4.85
5.90
3.80
3.85
—
Max
1.50
0.20
0.50
0.25
4.95
6.10
3.90
3.95
—
Typ
1.45
0.15
0.40
0.20
4.90
6.00
3.85
3.90
1.27
0.35
0.72
0.65
E
1
E
E1
E0
e
h
L
b
E1
h
)
Q
sides
All
–
—
0.82
0.70
(
7°
9°
0.62
0.60
c
Q
4°± 3°
A
All Dimensions in mm
Gauge Plane
Seating Plane
L
A1
e
E0
D
Suggested Pad Layout
SO-8
X1
Dimensions Value
(in mm)
C
X
X1
Y
1.27
0.802
4.612
1.505
6.50
Y1
Y1
Y
C
X
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May 2017
© Diodes Incorporated
DMT68M8LSS
Document number: DS39396 Rev. 2 – 2
DMT68M8LSS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
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© Diodes Incorporated
DMT68M8LSS
Document number: DS39396 Rev. 2 – 2
Mouser Electronics
Authorized Distributor
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