Diodes-Incorporated-DMT69M5LH3
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DMT69M5LH3
Green
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
100% Unclamped Inductive Switching (UIS) Test in Production
–
Ensures More Reliable and Robust End Application
Low On-Resistance
I
D Max
BV
DSS
R
DS(ON) Max
T
C
= +25°C
75A
62A
10.5m
Ω
@ V
GS
= 10V
15m
Ω
@ V
GS
= 4.5V
60V
Low Input Capacitance
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us
or your local Diodes representative.
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) yet maintain superior switching performance, making it ideal
for high-efficiency power management applications.
Mechanical Data
Case: TO251
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Terminal Connections: See Diagram
Motor Control
Backlighting
Terminals: Finish
–
Matte Tin Annealed over Copper Leadframe.
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
TO251 (Type TH3)
G
D
S
Top View
Bottom View
Top View
Pin Configuration
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMT69M5LH3
Case
TO251 (Type TH3)
Packaging
75 Pieces / Tube
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
TO251 (Type TH3)
= Manufacturer’s Marking
T69M5L = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 20 = 2020)
WW = Week (01 to 53)
1 of 7
October 2020
© Diodes Incorporated
DMT69M5LH3
Document number: DS42635
Rev. 2 – 2
DMT69M5LH3
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
Unit
V
60
Gate-Source Voltage
±20
V
V
GSS
T
C
= +25°C
T
C
= +70°C
75
60
A
Continuous Drain Current (Note 6) V
GS
= 10V
I
D
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
Pulsed Body Diode Current (10
μ
s Pulse, Duty Cycle = 1% )
Avalanche Current, L = 0.1mH
75
A
A
I
S
300
300
27.4
37.5
I
DM
I
SM
I
AS
E
AS
A
A
Avalanche Energy, L = 0.1mH
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
3.3
Unit
W
Total Power Dissipation (Note 5)
T
A
= +25°C
Steady State
T
C
= +25°C
P
D
R
JA
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
38
96
°C/W
W
P
D
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
1.3
°C/W
°C
R
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
60
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
V
DS
= 48V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
Zero Gate Voltage Drain Current
Gate-Source Leakage
µA
nA
±100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.4
—
—
—
—
2.5
10.5
15
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 20A
V
GS
= 0V, I
S
= 1A
5.8
8.5
0.8
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
1.2
1406
540
52
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1.85
28.4
15.4
2.4
V
DS
= 0V, V
GS
= 0V, f = 1MHz
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Q
g
Q
g
V
DS
= 30V, I
D
= 13.5A
Q
gs
Q
gd
t
D(ON)
t
R
9.0
Gate-Drain Charge
10.5
49.0
30.9
79.5
26.7
44.8
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 30V, V
GS
= 10V,
R
G
= 6
Ω
, I
D
= 13.5A
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
t
RR
I
F
= 13.5A, di/dt = 300A/
μ
s
Body Diode Reverse Recovery Charge
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
6. Device mounted on infinite heatsink.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
2 of 7
October 2020
© Diodes Incorporated
DMT69M5LH3
Document number: DS42635
Rev. 2 – 2
DMT69M5LH3
30
25
20
15
10
5
100.0
90.0
80.0
70.0
60.0
50.0
40.0
30.0
20.0
10.0
0.0
V
DS
= 5V
V
GS
= 10.0V
V
GS
= 4.0V
V
GS
= 3.5V
V
GS
= 5.0V
V
GS
= 4.5V
T
J
= 85
℃
V
GS
= 3.0V
V
GS
= 2.7V
T
J
= 150
℃
T
J
= 125
℃
T
J
= 25
℃
T
J
= -55
℃
V
GS
= 2.5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.02
0.018
0.016
0.014
0.012
0.01
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
V
GS
= 4.5V
I
D
= 20A
0.008
0.006
0.004
0.002
0
V
GS
= 10.0V
0
10 20 30 40 50 60 70 80 90
100
I
D
, DRAIN-SOURCE CURRENT (A)
0
4
8
12
16
20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
0.014
0.012
0.01
2
1.8
1.6
1.4
1.2
1
V
GS
= 10V
T
J
= 150
℃
V
GS
= 10V, I
D
= 20A
T
J
= 125
℃
T
J
= 85
℃
T
J
= 25
℃
T
J
= -55
℃
0.008
0.006
0.004
0.002
0
V
GS
= 4.5V, I
D
= 20A
0.8
0.6
0.4
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100 125 150
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Junction
Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
3 of 7
October 2020
© Diodes Incorporated
DMT69M5LH3
Document number: DS42635
Rev. 2 – 2
DMT69M5LH3
2.5
2
0.02
0.018
0.016
0.014
0.012
0.01
I
D
= 1mA
V
GS
= 4.5V, I
D
= 20A
1.5
1
0.008
0.006
0.004
0.002
0
I
D
= 250
μ
A
V
GS
= 10V, I
D
= 20A
0.5
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Junction
Temperature
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
1000
100
10
30
25
20
15
10
5
f = 1MHz
V
GS
= 0V
C
iss
C
oss
T
J
= 150
o
C
C
rss
T
J
= 125
o
C
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
1
0
0.3
0.6
0.9
1.2
1.5
0
5
10 15 20 25 30 35 40 45 50 55 60
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Typical Junction Capacitance
10
8
1000
100
10
R
DS(ON)
Limited
6
P
W
= 1µs
4
P
W
= 10µs
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on Infinite
Heatsink
P
W
= 100µs
P
W
= 1ms
P
W
= 10ms
V
DS
= 30V, I
D
= 13.5A
1
2
P
W
= 100ms
DC
V
GS
= 10V
0
0.1
0
5
10
15
20
25
30
0.1
1
10
100
Q
g
(nC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
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October 2020
© Diodes Incorporated
DMT69M5LH3
Document number: DS42635
Rev. 2 – 2
DMT69M5LH3
1
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
D = Single Pulse
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 1.3
℃
/W
Duty Cycle, D = t1/t2
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
October 2020
© Diodes Incorporated
DMT69M5LH3
Document number: DS42635
Rev. 2 – 2
DMT69M5LH3
Package Outline Dimensions
TO251 (Type TH3)
E
TO251 (Type TH3)
L4
b3
Dim
A
A2
b
b2
b3
c
Min Max Typ
2.20 2.40 2.30
0.97 1.17 1.07
0.68 0.90 0.78
0.76 0.95 0.84
5.20 5.50 5.33
0.43 0.63 0.53
5.98 6.22 6.10
5.30 REF
L3
L5
D
Ø 1.2×0.1
TOP E-MARK
D
D1
D2
e
01
5.26 5.66 5.46
2.286 BSC
b2
E
E1
H
6.40 6.80 6.60
4.63 5.03 4.83
9.40 9.85 9.62
0.40REF
k
L1
L3
L4
L5
θ1
θ2
2.30 2.70 2.50
0.88 1.28 1.02
0.75 REF
02
1.65 1.95 1.80
5°
5°
9°
9°
7°
7°
A
k
All Dimensions in mm
6 of 7
October 2020
© Diodes Incorporated
DMT69M5LH3
Document number: DS42635
Rev. 2 – 2
DMT69M5LH3
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
7 of 7
October 2020
© Diodes Incorporated
DMT69M5LH3
Document number: DS42635
Rev. 2 – 2
