Diodes-Incorporated-DMT8008LSS-13
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DMT8008LSS
80V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
High Conversion Efficiency
I
D
Max
T
A
= +25°C
13A
BV
DSS
R
DS(ON)
Max
Low R
DS(ON)
–
Minimizes On-State Losses
Low Input Capacitance
8m
Ω @ V
GS
= 10V
9.5m
Ω @ V
GS
= 6V
12m
Ω @ V
GS
= 4.5V
Fast Switching Speed
80V
12A
100% Unclamped Inductive Switching (UIS) Test in Production
–
Ensures More Reliable and Robust End Application
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us
or your local Diodes representative.
11A
Mechanical Data
Description and Applications
Case: SO-8
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 3 per J-STD-020
Terminal Finish
–
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
High Frequency Switching
Synchronous Rectification
DC-DC Converters
SO-8
S
S
S
G
D
D
D
Pin 1
D
Top View
Top View
Pin-Out
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMT8008LSS-13
SO-8
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
8
5
= Manufacturer’s Marking
T8008LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 19 = 2019)
WW = Week (01 to 53)
T8008LS
YY WW
1
4
1 of 7
December 2019
© Diodes Incorporated
DMT8008LSS
Document number: DS40518
Rev. 3 – 2
DMT8008LSS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
80
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
A
= +25°C
13
10
A
A
I
D
T
A
= +70°C
Continuous Drain Current (Note 6) V
GS
= 10V
T
C
= +25°C
32
26
I
D
I
DM
I
S
T
C
= +70°C
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.3mH (Note 9)
110
10
A
A
110
27
A
I
SM
I
AS
E
AS
A
Avalanche Energy, L = 0.3mH (Note 9)
109
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
1.3
Unit
W
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
94
°C/W
W
R
θ
JA
2.2
58
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
°C/W
°C/W
°C
R
θ
JA
10
R
θ
JC
T
J,
T
STG
-55 to +150
Electrical Characteristics
(T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
80
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 1mA
Zero Gate Voltage Drain Current
Gate-Source Leakage
μ
A
μ
A
V
DS
= 64V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
±1
I
GSS
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
1.3
—
—
—
—
—
6
2.8
8
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 10A
V
GS
= 6V, I
D
= 10A
V
GS
= 4.5V, I
D
= 6A
V
GS
= 0V, I
S
= 20A
Static Drain-Source On-Resistance
7
9.5
12
1.2
8.3
0.8
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2840
797
42
1.7
24
47
7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= 40V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
Q
g
nC
ns
V
DD
= 40V, I
D
= 2A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
11
6
Turn-On Delay Time
Turn-On Rise Time
6
V
DD
= 40V, V
GS
= 10V,
I
D
= 2A, R
g
= 1.6
Ω
Turn-Off Delay Time
27
44
43
59
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
ns
t
RR
I
F
= 2A, di/dt = 10
0A/μs
Body Diode Reverse Recovery Charge
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C
.
2 of 7
December 2019
© Diodes Incorporated
DMT8008LSS
Document number: DS40518
Rev. 3 – 2
DMT8008LSS
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
GS
= 3.5V
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 10V
V
DS
= 5V
V
GS
= 3.0V
T
J
= 85
℃
T
J
= 25
℃
V
GS
= 2.8V
V
GS
= 2.6V
T
J
= 150
℃
T
J
= 125
℃
V
GS
= 2.4V
3
T
J
= -55
℃
0
0.0
1
1.5
2
2.5
3
3.5
4
0
1
2
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.1
0.08
0.06
0.04
0.02
0
0.01
0.009
0.008
0.007
0.006
0.005
0.004
V
GS
= 4.5V
V
GS
= 6.0V
V
GS
= 10V
I
D
= 10A
0
5
10
15
20
25
30
0
4
8
12
16
20
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. Typical Transfer Characteristic
2
1.8
1.6
1.4
1.2
1
0.014
0.012
0.01
V
GS
= 10V, I
D
= 10A
V
GS
= 6.0V, I
D
= 10A
V
GS
= 10V
T
J
= 150
℃
T
J
= 125
℃
0.008
0.006
0.004
0.002
0
T
J
= 85
℃
T
J
= 25
℃
T
J
= -55
℃
V
GS
= 4.5V, I
D
= 6.0A
0.8
0.6
-50 -25
0
25
50
75 100
125 150
0
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 6. On-Resistance Variation with Junction
Temperature
Figure 5. Typical On-Resistance vs. Drain Current
and Junction Temperature
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December 2019
© Diodes Incorporated
DMT8008LSS
Document number: DS40518
Rev. 3 – 2
DMT8008LSS
0.02
0.018
0.016
0.014
0.012
0.01
2.4
2.1
1.8
1.5
1.2
0.9
0.6
V
GS
= 4.5V, I
D
= 6.0A
I
D
= 1mA
V
GS
= 6.0V, I
D
= 10A
I
D
= 250
μ
A
0.008
0.006
0.004
0.002
0
V
GS
= 10V, I
D
= 10A
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Junction
Temperature
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
1000
100
10
30
25
20
15
10
5
V
GS
= 0V
f = 1MHz
C
iss
C
oss
C
rss
T
J
= 85
o
C
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= -55
o
C
1
0
0
20
40
60
80
0
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
1000
100
10
R
DS(ON)
Limited
P
W
= 100µs
P
W
= 1ms
6
1
P
W
= 10ms
P
W
= 100ms
4
0.1
T
J(Max)
= 150
℃
T
C
= 25
℃
P
W
= 1s
P
W
= 10s
DC
Single Pulse
DUT on 1*MRP
Board
2
V
DS
= 40V, I
D
= 2.0A
0.01
V
GS
= 10V
0
0.001
0
5
10 15 20 25 30 35 40 45 50
Q
g
(nC)
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
4 of 7
December 2019
© Diodes Incorporated
DMT8008LSS
Document number: DS40518
Rev. 3 – 2
DMT8008LSS
1
D=0.7
D=0.5
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 95
℃
/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
1E-06 1E-05
0.0001 0.001
0.01
0.1
1
10
100
1000 10000
10000
0
1
000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
December 2019
© Diodes Incorporated
DMT8008LSS
Document number: DS40518
Rev. 3 – 2
DMT8008LSS
Package Outline Dimensions
SO-8
SO-8
Max
Dim
A
A1
b
c
D
Min
1.40
0.10
0.30
0.15
4.85
5.90
3.80
3.85
—
Typ
1.45
0.15
0.40
0.20
4.90
6.00
3.85
3.90
1.27
0.35
0.72
0.65
1.50
0.20
0.50
0.25
4.95
6.10
3.90
3.95
—
E
1
E
E1
E0
e
h
L
b
E1
h
–
—
Q
0.62
0.60
0.82
0.70
sides)
All
(
7°
9°
Q
c
All Dimensions in mm
4°± 3°
A
Gauge Plane
Seating Plane
L
A1
e
E0
D
Suggested Pad Layout
SO-8
X1
Dimensions Value
(in mm)
C
X
X1
Y
1.27
0.802
4.612
1.505
6.50
Y1
Y1
Y
C
X
6 of 7
December 2019
© Diodes Incorporated
DMT8008LSS
Document number: DS40518
Rev. 3 – 2
DMT8008LSS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
7 of 7
December 2019
© Diodes Incorporated
DMT8008LSS
Document number: DS40518
Rev. 3 – 2
Mouser Electronics
Authorized Distributor
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