Diodes-Incorporated-DMTH10H017LPD-13
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DMTH10H017LPD
Green
100V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary
Features and Benefits
Rated to +175°C
Environments
100% Unclamped Inductive Switching (UIS) Test in Production
–
Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low R
DS(ON)
–
Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
–
Ideal for High Ambient Temperature
I
D
max
BV
DSS
R
DS(ON)
max
T
C
= +25°C
59A
45A
17.4
mΩ @ V
GS
= 10V
30.3
mΩ @ V
GS
= 4.5V
100V
Description and Applications
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Synchronous Rectifier
DC-DC Converters
Primary Side Switching
Mechanical Data
®
Case: PowerDI
5060-8
Case Material:
Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
–
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.097 grams (Approximate)
D1
S1
D2
S1
D1
D1
D2
D2
G1
S2
G1
G2
G2
S2
Pin1
Top View
Pin Configuration
Top View
Bottom View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMTH10H017LPD-13
Case
Packaging
2500 / Tape & Reel
PowerDI5060-8 (Type E)
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <
900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
D1 D1 D2 D2
= Manufacturer’s Marking
H10H017LD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 19 = 2019)
H10H017LD
YY WW
WW = Week (01 to 53)
S1 G1 S2 G2
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
April 2019
© Diodes Incorporated
DMTH10H017LPD
Document number: DS40752
Rev. 4 – 2
DMTH10H017LPD
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
100
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
C
= +25°C
59
42
A
Continuous Drain Current, V
GS
= 10V (Note 6)
I
D
T
C
= +100°C
Maximum Body Diode Forward Current (Note 6)
60
236
236
10
A
A
I
S
Pulsed Drain Current (10
μ
s Pulse, T
C
=
+25°C, Package Limited
)
I
DM
I
SM
I
AS
A
Pulsed Body Diode Forward Current (10
μ
s Pulse, T
C
=
+25°C, Package Limited
)
Avalanche Current, L = 3mH (Note 9)
A
Avalanche Energy, L = 3mH (Note 9)
Avalanche Current, L = 1mH (Note 9)
Avalanche Energy, L = 1mH (Note 9)
150
10
mJ
A
E
AS
I
AS
50
mJ
E
AS
Thermal Characteristics
Characteristic
Symbol
P
D
Value
Unit
W
Total Power Dissipation
2.6
T
A
= +25°C
T
C
= +25°C
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation
56
93
°C/W
W
R
θ
JA
P
D
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
1.6
°C/W
°C
R
θ
JC
-55 to +175
T
J,
T
STG
Electrical Characteristics
(@T
C
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
100
V
BV
DSS
I
DSS
1
V
GS
= 0V, I
D
= 1mA
V
DS
= 80V, V
GS
= 0V
V
GS
= ±16V, V
DS
= 0V
µA
nA
±100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1
3
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
13.7
23.8
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 17A
V
GS
= 4.5V, I
D
= 10A
V
GS
= 0V, I
S
= 17A
17.4
30.3
1.3
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
1986
333
20
C
iss
C
oss
C
rss
R
G
—
—
—
—
V
DS
= 50V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
1.17
14.4
28.6
5.2
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
Q
g
nC
V
DS
= 50V, I
D
= 20A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
8.2
Turn-On Delay Time
9.8
Turn-On Rise Time
16.3
32.6
21.6
40.6
58.1
V
DD
= 50V, V
GS
= 10V,
ns
Turn-Off Delay Time
R
G
= 11
Ω
, I
D
= 20A
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
t
RR
I
F
= 17A, di/dt = 10
0A/μs
I
F
= 17A, di/dt = 10
0A/μs
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Thermal resistance from junction to solder point (on the exposed drain pin).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C
.
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April 2019
© Diodes Incorporated
DMTH10H017LPD
Document number: DS40752
Rev. 4 – 2
DMTH10H017LPD
20
15
30.0
25.0
20.0
15.0
10.0
5.0
V
GS
= 4.5V
V
GS
= 5.0V
V
GS
= 6.0V
V
GS
= 10V
V
DS
= 5V
10
V
GS
= 4.0V
5
T
J
= 175
℃
T
J
= 85
℃
T
J
= 25
℃
T
J
= 150
℃
T
J
= 125
℃
V
GS
= 3.5V
4
T
J
= -55
℃
0.0
0
0
1
2
3
5
2
2.5
3
3.5
4
4.5
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.2
0.15
0.1
0.05
0
0.03
0.025
0.02
V
GS
= 4.5V
I
D
= 10A
I
D
= 17A
V
GS
= 6.0V
V
GS
= 10V
0.015
0.01
0
5
10
15
20
25
30
0
4
8
12
16
20
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
0.032
0.03
2.2
2
V
GS
= 10V
V
GS
= 10V, I
D
= 17A
T
J
= 175
℃
0.028
0.026
0.024
0.022
0.02
1.8
1.6
1.4
1.2
1
T
J
= 150
℃
T
J
= 125
℃
T
J
= 85
℃
0.018
0.016
0.014
0.012
0.01
V
GS
= 6.0V, I
D
= 10A
V
GS
= 4.5V, I
D
= 10A
T
J
= 25
℃
T
J
= -55
℃
0.8
0.6
0.4
0.008
0.006
0.004
0
5
10
15
20
25
30
-50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
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April 2019
© Diodes Incorporated
DMTH10H017LPD
Document number: DS40752
Rev. 4 – 2
DMTH10H017LPD
0.044
0.04
3
2.8
2.6
2.4
2.2
2
V
GS
= 4.5V, I
D
= 10A
0.036
0.032
0.028
0.024
0.02
V
GS
= 6.0V, I
D
= 10A
I
D
= 1mA
I
D
= 250
μ
A
1.8
1.6
1.4
1.2
1
0.016
0.012
0.008
0.004
V
GS
= 10V, I
D
= 17A
-50 -25
0
25 50 75
100 125 150 175
-50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
Figure 8. Gate Threshold Variation vs.
JunctionTemperature
30
25
20
15
10
5
10000
V
GS
= 0V
f = 1MHz
C
iss
1000
100
10
C
oss
T
A
= 175
o
C
T
A
= 150
o
C
T
A
= 125
o
C
T
A
= 85
o
C
C
rss
T
A
= 25
o
C
T
A
= -55
o
C
1
0
0
10 20 30 40 50 60 70 80 90
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Typical Junction Capacitance
1000
100
10
10
8
R
DS(ON)
Limited
6
P
W
= 1µs
1
P
W
= 10µs
4
P
W
= 100µs
0.1
T
J(Max)
= 175
℃
T
C
= 25
℃
Single Pulse
P
W
= 1ms
V
DS
= 50V, I
D
= 20A
P
W
= 10ms
2
0.01
0.001
DUT on Infinite
Heatsink
V
GS
= 10V
P
W
= 100ms
0
0
5
10
15
20
25
30
0.1
1
10
100
1000
Q
g
(nC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
4 of 7
April 2019
© Diodes Incorporated
DMTH10H017LPD
Document number: DS40752
Rev. 4 – 2
DMTH10H017LPD
1
D=0.7
D=0.5
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 1.6
℃
/W
Duty Cycle, D = t1/t2
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
April 2019
© Diodes Incorporated
DMTH10H017LPD
Document number: DS40752
Rev. 4 – 2
DMTH10H017LPD
Package Outline Dimensions
PowerDI5060-8 (Type E)
D
PowerDI5060-8
(Type E)
D1
Dim
Min
Max
Typ
0( 4x)
A
A1
b
0.90
0
0.33
1.10 1.00
0.05 0.02
0.51 0.41
x
b1
b2
c
0.300 0.366 0.333
A1
E1
E
0.20
0.23
0.35 0.25
0.33 0.277
y
Seating Plane
D
5.15 BSC
e
c
D1
D2
D3
E
E1
E2
e
k
k1
L
La
L1
L4
M
x
y
4.85
1.40
–
4.95 4.90
1.60 1.50
1
–
3.98
Ø 1.000
Depth 0.07±
0.030
b1( 8x)
01( 4x)
6.15 BSC
5.75
3.56
5.85 5.80
3.76 3.66
DETAIL A
b( 8x)
1
e/2
1.27BSC
–
–
–
1.27
–
0.56
0.51
0.51
0.05
–
D3
L
0.71 0.61
0.71 0.61
0.20 0.175
k
b2( 2x)
A
k1
–
0.125
L4
D2
3.50
–
–
10°
6°
3.71 3.605
E2
D2
M
DETAIL A
–
–
1.400
1.900
11°
θ
θ1
12°
8°
7°
All Dimensions in mm
La
L1
Suggested Pad Layout
PowerDI5060-8 (Type E)
X4
Value
Dimensions
8
(in mm)
C
G
G1
X
X1
X2
X3
X4
Y
Y1
Y2
Y3
1.270
0.660
0.820
0.610
3.910
1.650
1.650
4.420
1.270
1.020
3.810
6.610
Y1
G1
X3
X2
Y2
Y3
X1
Y( 4x)
1
G
X
C
6 of 7
April 2019
© Diodes Incorporated
DMTH10H017LPD
Document number: DS40752
Rev. 4 – 2
DMTH10H017LPD
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
7 of 7
April 2019
© Diodes Incorporated
DMTH10H017LPD
Document number: DS40752
Rev. 4 – 2
Mouser Electronics
Authorized Distributor
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