Diodes-Incorporated-DMTH3004LFG-13
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DMTH3004LFG
N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8
Product Summary
Features and Benefits
Low R
DS(ON)
—
Ensures On-State Losses are Minimized
I
D
Max
T
C
= +25°C
BV
DSS
R
DS(ON)
Max
Excellent Q
gd
x R
DS(ON
)
Product (FOM)
Small Form Factor Thermally Efficient Package Enables Higher-
Density End Products
75A
50A
5.5m
Ω @ V
GS
= 10V
8.5m
Ω @ V
GS
= 4.5V
30V
Occupies just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
100% UIS (Avalanche) Rated
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
An Automotive-Compliant Part is Available Under Separate
Description and Applications
Mechanical Data
®
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) yet maintain superior switching performance, making it ideal
for high-efficiency power management applications.
Case: PowerDI
3333-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 3 per J-STD-020
Engine Management Systems
Body Control Electronics
DC-DC Converters
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
PowerDI3333-8
Pin 1
D
S
S
S
8
7
6
5
1
2
3
4
G
G
D
D
D
S
D
Bottom View
Top View
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
DMTH3004LFG-7
DMTH3004LFG-13
Case
PowerDI3333-8
PowerDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-free/ fo
r more information about Diodes
Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
YS5 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 18 = 2018)
WW = Week Code (01 to 53)
YS5
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
July 2018
© Diodes Incorporated
DMTH3004LFG
Document number: DS40696
Rev. 3 – 2
DMTH3004LFG
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Unit
V
Gate-Source Voltage
±16
V
V
GSS
75
52
T
C
= +25°C
Continuous Drain Current (Notes 6 & 9) V
GS
= 10V
T
C
= +100°C
A
A
I
D
I
D
15
10
T
A
= +25°C
Continuous Drain Current (Note 5) V
GS
= 10V
T
A
= +100°C
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (100µs Pulse, Duty Cycle = 1%)
Pulsed Body Diode Forward Current (100µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.3mH
3
A
A
I
S
250
250
27
I
DM
I
SM
I
AS
E
AS
A
A
Avalanche Energy, L = 0.3mH
110
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
R
Value
50
Unit
W
Total Power Dissipation (Note 6)
T
C
= +25°C
T
A
= +25°C
Thermal Resistance, Junction to Case (Note 6)
Total Power Dissipation (Note 5)
3
2.5
°C/W
W
JC
P
D
R
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
60
°C/W
°C
JA
-55 to +175
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μA
μ
A
nA
V
DS
= 24V, V
GS
= 0V
V
GS
= ±16V, V
DS
= 0V
±100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1
—
3
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 7A
V
GS
= 0V, I
S
= 1A
—
—
—
4.1
6.2
0.7
5.5
8.5
1
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2370
1360
240
0.6
20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
44
Q
g
nC
ns
V
DS
= 15V, I
D
= 20A
7
Q
gs
Q
gd
t
D(ON)
t
R
8
Gate-Drain Charge
6.2
4.3
21
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 15V, V
GS
= 10V,
R
L
= 0.75
Ω
, R
g
= 3
Ω
, I
D
= 20A
Turn-Off Delay Time
t
D(OFF)
t
F
8
Turn-Off Fall Time
25
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
t
RR
I
F
= 15A, di/dt = 500A/
μ
s
37
nC
Q
RR
Notes:
5. R
JA
is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R
JC
is guaranteed by design while
R
JA
is determined by the user’s board design.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
2 of 7
July 2018
© Diodes Incorporated
DMTH3004LFG
Document number: DS40696
Rev. 3 – 2
DMTH3004LFG
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
DS
= 5.0V
V
GS
= 3.5V
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 5.0V
V
GS
= 10.0V
V
GS
= 3.2V
V
GS
= 3.0V
T
J
= 125
℃
T
J
= 85
℃
T
J
= 25
℃
T
J
= 150
℃
V
GS
= 2.8V
V
GS
= 2.7V
V
GS
= 2.5V
T
J
= 175
℃
T
J
= -55
℃
0
0.0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
8.00
7.00
6.00
5.00
4.00
3.00
2.00
1.00
0.00
30
25
20
15
10
5
V
GS
= 4.5V
V
GS
= 10V
I
D
= 20A
0
0
2
4
6
8
10 12 14 16 18 20
2
4
6
8
10
12
14
16
18
20
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4.
Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.01
0.008
0.006
0.004
0.002
0
2
1.8
1.6
1.4
1.2
1
V
GS
= 10V
T
J
= 175
℃
T
J
= 150
℃
T
J
= 125
℃
V
GS
= 4.5V, I
D
= 7A
T
J
= 85
℃
T
J
= 25
℃
0.8
0.6
0.4
T
J
= -55
℃
V
GS
= 10V, I
D
= 20A
0
5
10
15
20
25
30
-50 -25
0
25
50
75 100
125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
3 of 7
July 2018
© Diodes Incorporated
DMTH3004LFG
Document number: DS40696
Rev. 3 – 2
DMTH3004LFG
0.014
0.012
0.01
3
2.5
2
V
GS
= 4.5V, I
D
= 7A
I
D
= 1mA
0.008
0.006
0.004
0.002
0
1.5
1
I
D
= 250
μ
A
V
GS
= 10V, I
D
= 20A
0.5
0
-50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
-50 -25
0
25
50
75 100
125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
30
25
20
15
10
5
10000
1000
100
f = 1MHz
V
GS
= 0V
C
iss
C
oss
T
J
= 85
o
C
T
J
= 125
o
C
C
rss
T
J
= 150
o
C
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
10
0
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
9
8
7
6
5
4
3
2
1
0
1000
100
10
R
DS(ON)
Limited
P
W
= 10µs
P
W
= 100µs
P
W
= 1ms
P
W
= 10ms
1
V
DS
= 15V, I
D
= 20A
T
J(Max)
= 175
℃
T
C
= 25
℃
Single Pulse
DUT on Infinite Heatsink
V
GS
= 10V
0.1
0.01
P
W
= 100ms
P
W
= 1s
0
5
10
15
Q
g
(nC)
Figure 11. Gate Charge
20
25
30
35
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
4 of 7
July 2018
© Diodes Incorporated
DMTH3004LFG
Document number: DS40696
Rev. 3 – 2
DMTH3004LFG
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
0.001
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 131
℃
/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
July 2018
© Diodes Incorporated
DMTH3004LFG
Document number: DS40696
Rev. 3 – 2
DMTH3004LFG
Package Outline Dimensions
PowerDI3333-8
A3
A1
A
PowerDI3333-8
Dim Min
Max Typ
0.75 0.85 0.80
A1
0.00 0.05 0.02
Seating Plane
A
D
A3
b
0.203
0.27 0.37 0.32
L( 4x)
E4
D2
b2
0.15 0.25 0.20
3.25 3.35 3.30
D2
2.22 2.32 2.27
3.25 3.35 3.30
1
D
Pin #1 ID
E
b2( 4x)
E2
1.56 1.66 1.61
E3
0.79 0.89 0.84
E4
1.60 1.70 1.65
E
e
L
0.65
0.35 0.45 0.40
E3
E2
L1
z
0.39
0.515
L1( 3x)
8
All Dimensions in mm
z( 4x)
b
e
Suggested Pad Layout
PowerDI3333-8
X3
X2
8
Dimensions Value
(in mm)
Y4
C
0.650
0.420
0.420
0.230
2.370
0.700
1.850
2.250
3.700
0.540
X
X1
Y1
X1
X2
X3
Y
Y2
Y3
Y1
Y2
Y3
Y4
Y
1
X
C
6 of 7
July 2018
© Diodes Incorporated
DMTH3004LFG
Document number: DS40696
Rev. 3 – 2
DMTH3004LFG
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
7 of 7
July 2018
© Diodes Incorporated
DMTH3004LFG
Document number: DS40696
Rev. 3 – 2
Mouser Electronics
Authorized Distributor
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