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DMTH4004SPSQ
Green
40V +175°C
N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary
Features
Rated to +175°C
–
Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching
–
Ensures More Reliable
and Robust End Application
I
D
Qg Typ
BV
DSS
R
DS(ON)
Max
2.7
mΩ @ V
GS
= 10V
T
C
= +25°C
40V
68.6nC
100A
Low R
DS(ON)
–
Minimizes Power Losses
Low Q
g
–
Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
The DMTH4004SPSQ is suitable for automotive applications
requiring specific change control; this part is AEC-Q101
qualified, PPAP capable, and manufactured in IATF 16949
certified facilities.
Description and Applications
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Mechanical Data
®
Package: PowerDI
5060-8
Package Material:
Molded Plastic, “Green” Molding Compoun
d.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Engine management systems
Body control electronics
DC-DC converters
Site 1:
PowerDI5060-8
S
S
D
D
D
D
Pin1
S
G
Top View
Pin Configuration
Top View
Internal Schematic
Bottom View
Site 2:
D
PowerDI5060-8 (SWP) (Type UX)
S
D
S
S
G
D
D
D
Pin1
G
S
Top View
Pin Configuration
Internal Schematic
Top View
Bottom View
Ordering Information
(Note 4)
Packing
Part Number
Package
Qty.
Carrier
DMTH4004SPSQ-13
DMTH4004SPSQ-13
PowerDI5060-8
PowerDI5060-8 (SWP) (Type UX)
2,500
2,500
Tape & Reel
Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for
more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
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© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS37562 Rev. 5 – 2
DMTH4004SPSQ
Marking Information
D
D
D
D
D
D
D
D
= Manufacturer’s Marking
T4004SS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 23 = 2023)
WW = Week (01 to 53)
T4004SS
YY WW
T4004SS
YY WW
S
S
S
G
S
S
S
G
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
40
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
A
= +25°C
I
D
31
26
Continuous Drain Current (Note 5)
A
T
A
= +70°C
100
T
C
= +25°C
Continuous Drain Current (Note 6)
A
I
D
T
C
= +100°C
(Note 8)
100
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.2mH
350
100
350
45
A
A
I
DM
I
S
A
I
SM
I
AS
E
AS
A
200
Avalanche Energy, L=0.2mH
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
3.6
Unit
W
T
A
= +25°C
T
C
= +25°C
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
41
°C/W
W
R
θ
JA
167
P
D
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
0.9
°C/W
°C
R
θ
JC
-55 to +175
T
J,
T
STG
Notes:
5. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR4 PCB; device is measured under still air conditions
whilst operating in a steady state.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
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© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS37562 Rev. 5 – 2
DMTH4004SPSQ
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
40
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 1mA
V
DS
= 32V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
μ
A
nA
±100
I
GSS
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
2
—
—
—
4
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 90A
V
GS
= 0V, I
S
= 20A
Static Drain-Source On-Resistance
Diode Forward Voltage
2.3
0.9
2.7
1.2
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4,305
1,441
102
C
iss
C
oss
C
rss
R
g
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
0.77
68.6
16.8
14.2
9.5
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
V
DD
= 20V, I
D
= 90A,
V
GS
= 10V
Gate-Source Charge
nC
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
6.7
Turn-On Rise Time
V
DD
= 20V, V
GS
= 10V,
I
D
= 90A, R
G
= 3.5
Ω
ns
26.4
8.1
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
52.4
Body Diode Reverse Recovery Time
ns
t
RR
I
F
= 50A, di/dt = 10
0A/μs
78.2
Body Diode Reverse Recovery Charge
nC
Q
RR
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing
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Document number: DS37562 Rev. 5 – 2
DMTH4004SPSQ
150
120
90
30
25
20
V
= 10
.
0
V
GS
V
= 6
.
0
V
GS
V
= 5
.
0
V
DS
V
= 5
.
0
V
GS
T
= 175°C
A
T
= 150°C
A
T
= 125°C
A
15
10
V
= 4
.
5
V
GS
60
T
A
= 85°C
A
30
0
T
= 25°C
5
0
V
= 4
.
0
V
= 3
.
5
V
GS
GS
V
T
= -55°C
A
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
V
DS
, DRAIN -SOURCE VOL
T
AGE
(
V)
Figure 1
T
y
pical Output Characteristics
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 2
T
y
pical Transfer Characteristics
2.60
2.50
2.40
2.30
2.20
2.10
2.00
15
12
9
V
= 10V
GS
6
I
= 100A
D
3
10 30 50 70 90
110 130 150 170 190 210
I
D
, DRAIN-SOURCE CURRENT (A)
0
2
4
6
8
10 12 14 16 18 20
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 4
T
y
pical Transfer Characteristics
Figure 3
T
y
pical On-Resistance vs.
Drain Current and Gate Voltage
0.006
0.005
2.2
2
V
= 10V
GS
T
T
T
= 175°C
= 150°C
= 125°C
A
A
A
1.8
0.004
0.003
0.002
1.6
1.4
T
= 85°C
A
T
= 25°C
V
I
= 10V
A
GS
= 90A
1.2
1
D
T
= -55°C
A
0.8
0.001
0
0.6
0.4
10
30
50
70
90
110
130
150
I
D
, DRAIN CURRENT (A)
–
5
0
–
2
5
0
25 50
75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (
C)
Figure 5
T
y
pical On-Resistance vs.
Dr
a
in Current and
T
e
m
p
e
r
a
ture
Figure 6 On-Resistance Variation with
T
e
m
p
e
r
a
ture
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Document number: DS37562 Rev. 5 – 2
DMTH4004SPSQ
0.005
0.004
0.003
0.002
4
3.5
3
V
I
= 10V
GS
= 100A
D
I
= 1mA
D
2.5
2
I
= 250µA
D
1.5
1
0.001
0
0.5
0
–
5
0
–
2
5
0
25 50
75 100 125 150 175
–
5
0
–
2
5
0
25 50
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
75 100
125 150 175
T
J
, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs.
Te
m
p
e
r
a
ture
150
120
90
10000
1000
C
iss
V
GS
=0V
T =
175°C
A
C
T =
150°C
o
s
s
A
T =
1
2
5
°C
A
T =
8
5°C
A
60
C
r
s
s
100
T =
25°C
A
30
f=
1
MHz
T =
–
5
5
°
C
A
0
0
10
0
5
10
15
20
25
30
35
40
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 10
T
y
pical Junction Capacitance
V
S
D
, SOURCE-DRAIN VOL
T
AGE
(
V)
Figure 9 Diode Forward Voltage vs. Current
10
8
1000
R
DS(ON)
LIMITED
100
10
1
V
I
= 20V
P
W
=1µs
DS
6
= 90A
D
P
W
=10µs
P
W
=100µs
P
W
=1ms
4
P
W
=10ms
T
J(MAX)
=175
℃
P
W
=100ms
T
C
=25
℃
Single Pulse
2
P
W
=1s
DUT on infinite heatsink
V
GS
=10V
0.1
0
0
10
20
30
40
50
60
70
0.1
1
10
100
Q
g
, TO
T
AL GATE CHARGE (nC)
Figure 11 Gate Charge
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS37562 Rev. 5 – 2
DMTH4004SPSQ
1
D = 0
.
9
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
0
5
D = 0
.
0
2
0.01
D = 0
.
0
1
D = 0
.
0
05
R
t
h
jc
(t) = r(t) * R
t
h
jc
R
t
h
jc
= 0.9°C/W
Duty Cycle, D = t1/ t2
10 100
1000
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13
Transient Thermal Resistance
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April 2023
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© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS37562 Rev. 5 – 2
DMTH4004SPSQ
Package Outline Dimensions
Site 1:
PowerDI5060-8
PowerDI5060-8
Dim
A
A1
b
b2
b3
c
Min
0.90
0.00
0.33
0.200
0.40
0.230
Max
1.10
0.05
0.51
0.350 0.273
0.80 0.60
0.330 0.277
5.15 BSC
5.10
4.10
4.30
6.15 BSC
6.00
3.68
4.39
1.27 BSC
0.71
0.71
0.200 0.175
4.035 3.635
1.40
12°
8°
Typ
1.00
D
D1
Detail A
c
0( 4X)
A1
0.41
E1 E
D
e
D1
D2
D3
E
E1
E2
E3
e
G
K
L
L1
M
4.70
3.70
3.90
4.90
3.90
4.10
01 (
4X)
1
5.60
3.28
3.99
5.80
3.48
4.19
b (
8X)
L
e
/
2
1
b2 (
4X)
D3
K
0.51
0.51
0.51
0.100
3.235
1.00
10°
0.61
0.61
A
D2
b3 (
4X)
E3
E2
M
M1
M1
Θ
Θ1
1.21
11°
7°
Detail A
G
L1
6°
All Dimensions in mm
Site 2:
PowerDI5060-8 (SWP) (Type UX)
D
D1
PowerDI5060-8 (SWP)
(Type UX)
Dim
Min
Max
Typ
A
A1
b
b2
b4
c
0.90
0
0.30
0.20
1.10 1.00
0.05
—
0.50 0.41
0.35 0.25
0.25REF
E1
E
A1
S
e
a
t
ing
P
l
ane
1.400
1.900
c
0.230 0.330 0.277
5.15 BSC
D
e
D1
D2
D2a
E
4.70
3.56
3.78
5.10 4.90
3.96 3.76
4.18 3.98
1
6.40 BSC
Ø1.000 Depth 0.07
±
0
.030
e
/
2
E1
E2
5.60
3.46
6.00 5.80
3.86 3.66
D
E
T
A
IL A
b( 8x)
L
E2a
4.195 4.595 4.395
e
k
1
1.27BSC
—
1.05
—
k
L
0.635 0.835 0.735
0.635 0.835 0.735
0.200 0.400 0.300
0.050REF
0.025 0.225 0.125
3.205 4.005 3.605
D2a
D2
La
L1
L1a
L4
M
A
L4
M
E2
θ
θ1
10°
6°
12°
8°
11°
7°
D
E
T
A
IL A
La
All Dimensions in mm
L1
b4( 8x)
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April 2023
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© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS37562 Rev. 5 – 2
DMTH4004SPSQ
Suggested Pad Layout
Site 1:
PowerDI5060-8
X4
Dimensions
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
Y2
C
G
G1
X
X3
Y3
Y1
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
X2
Y5
Y4
X1
Y7
G1
C
Y6
Y(
4
x)
X
G
Site 2:
PowerDI5060-8 (SWP) (Type UX)
X2
Value
Dimensions
(in mm)
1.270
0.660
0.820
0.610
4.100
4.420
1.270
1.020
3.810
6.610
C
G
G1
X
X1
X2
Y
Y1
Y2
Y3
Y1
Y2
Y3
X1
G1
X (
8x)
C
Y
G
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April 2023
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© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS37562 Rev. 5 – 2
DMTH4004SPSQ
IMPORTANT NOTICE
DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH
1.
REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF
MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY
RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
2.
The Information contained herein is for informational purpose only and is provided only to illustrate the operation
of Diodes’ products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any
product described herein. This document is intended for skilled and technically trained engin
eering customers and users who design with Diodes’
products. Diodes’ products may be used to facilitate safety
-related applications; however, in all instances customers and users are responsible for
(a) selecting the appropriate Diodes products for their a
pplications, (b) evaluating the suitability of Diodes’ products for their intended applications,
(c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements
as well as safety and
functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control
techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their
applications.
3.
Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes
from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such
use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against al
l damages and
liabilities.
4.
Products described herein may be covered by one or more United States, international or foreign patents and pending patent
applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks
and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties
(including third parties whose products and services may be described in this document or on Diodes’ webs
ite) under this document.
5.
Diodes’
products
are
provided
subject
to
Diodes’
Standard
Terms
and
Conditions
of
Sale
(
https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/
)
or other applicable terms. This document does not
alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any
products purchased through unauthorized sales channel.
6.
Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sa
le is
prohibited under any applicable laws and regulations. Should customers o
r users use Diodes’ products in contravention of any applicable laws or
regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or
penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless
against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with
the applicable laws and regulations, as well as any unintended or unauthorized application.
7.
While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain
technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and
Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make
modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described
herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document
is the final and determinative format released by Diodes.
8.
Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is
prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such
unauthorized use.
9. This Notice may be periodically updated with the most recent version available at
https://www.diodes.com/about/company/terms-and-
The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries.
All other trademarks are the property of their respective owners.
© 2023 Diodes Incorporated. All Rights Reserved.
9 of 9
April 2023
DMTH4004SPSQ
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS37562 Rev. 5 – 2
