Diodes-Incorporated-DMTH4005SK3-13
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Green
DMTH4005SK3
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Rated to +175°C
Environments
–
Ideal for High Ambient Temperature
I
D
BV
DSS
R
DS(ON)
max
4.5
mΩ @ V
GS
= 10V
T
C
= +25°C
100% Unclamped Inductive Switching
–
ensures more reliable
and robust end application
40V
95A
Low R
DS(ON)
–
minimizes power losses
Low Q
g
–
minimizes switching losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and
Antimony Free. “Green” Device (Note
3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Engine Management Systems
Body Control Electronics
DCDC Converters
Case: TO252 (DPAK)
Case M
aterial: Molded Plastic, “Green” Molding Compound.
UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish
–
Matte Tin Annealed over Copper Leadframe.
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
D
D
D
TO252 (DPAK)
G
G
S
S
Top View
Top View
Pin Out
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMTH4005SK3-13
Case
TO252 (DPAK)
Packaging
2,500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html
for more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm tota
l Br + Cl) and
<1000ppm antimony compounds.
Marking Information
= Manufacturer
’
s Marking
H4005S = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
H4005S
YYWW
WW = Week Code (01 to 53)
1 of 7
August 2016
© Diodes Incorporated
DMTH4005SK3
Document number: DS38212
Rev. 3 – 2
DMTH4005SK3
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
40
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
C
= +25°C
(Note 9)
95
Continuous Drain Current (Note 6)
A
I
D
T
C
= +100°C
73
85
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current, L=0.1mH
A
A
T
C
= +25
C
I
S
150
32.5
52.8
I
DM
I
AS
A
Avalanche Energy, L=0.1mH
mJ
E
AS
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
Value
2.1
Unit
W
T
A
= +25°C
T
C
= +25°C
P
D
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
38
°C/W
W
R
JA
100
1.5
P
D
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
°C/W
R
JC
-55 to +175
°C
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
40
V
BV
DSS
I
DSS
1
V
GS
= 0V, I
D
= 1mA
V
DS
= 32V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
µA
nA
±100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
2
4
V
m
Ω
V
3.6
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 50A
V
GS
= 0V, I
S
= 50A
Static Drain-Source On-Resistance
4.5
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
0.9
3062
902
C
iss
C
oss
C
rss
R
G
V
DS
= 20V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
179
0.67
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DD
= 20V, I
D
= 50A,
Total Gate Charge
49.1
10.3
Q
g
Gate-Source Charge
nC
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
13
8.7
Turn-On Delay Time
Turn-On Rise Time
6.8
18.6
V
DD
= 20V, V
GS
= 10V,
I
D
= 50A, R
G
= 3
Ω
ns
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
7.3
31.8
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
t
RR
I
F
= 50A, di/dt = 10
0A/μs
26.5
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
9. Package limited.
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August 2016
© Diodes Incorporated
DMTH4005SK3
Document number: DS38212
Rev. 3 – 2
DMTH4005SK3
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
20
18
16
14
12
10
8
V
GS
= 10.0V
V
GS
= 5.0V
V
DS
= 5.0V
V
GS
=4.5V
125
℃
150
℃
175
℃
85
℃
25
℃
6
V
GS
= 4.0V
V
GS
= 3.5V
4
2
-55
℃
0
0.0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
Figure 1. Typical Output Characteristic
20
18
16
14
12
10
8
6.00
5.00
4.00
3.00
2.00
1.00
0.00
V
GS
= 10.0V
6
I
D
= 50A
4
2
0
0
5
10 15 20 25 30 35 40 45 50
I
D
, DRAIN-SOURCE CURRENT (A)
2
4
6
8
10
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
12
14
16
18
20
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
2.2
2
V
GS
= 10V
175
℃
150
℃
1.8
1.6
1.4
1.2
1
125
℃
85
℃
25
℃
-55
℃
0.8
0.6
0.4
V
GS
= 10V, I
D
= 50A
10
20
30 40
50 60
70
80 90
100
-50 -25
0
25
50
75 100
125 150 175
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
Figure 6. On-Resistance Variation with Temperature
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August 2016
© Diodes Incorporated
DMTH4005SK3
Document number: DS38212
Rev. 3 – 2
DMTH4005SK3
0.008
0.006
0.004
0.002
0
3.5
3
I
D
= 1mA
2.5
2
I
D
= 250
μ
A
1.5
1
V
GS
= 10V, I
D
= 50A
0.5
0
-50 -25
0
25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
50
75 100
125 150 175
-50 -25
0
25
50
75 100
125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Temperature
100
90
80
70
60
50
40
30
20
10
0
10000
1000
100
f = 1MHz
V
GS
= 0V
C
iss
C
oss
T
A
= 85
o
C
C
rss
T
A
= 125
o
C
T
A
= 150
o
C
T
A
= 175
o
C
T
A
= 25
o
C
T
A
= -55
o
C
10
0
5
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
1000
100
10
R
DS(ON)
Limited
P
W
=10µs
P
W
=1µs
6
P
W
=100µs
P
W
=1ms
P
W
=10ms
P
W
=100ms
P
W
=1s
4
V
DS
= 20V, I
D
= 50A
1
T
J(Max)
= 175
℃
T
C
= 25
℃
Single Pulse
2
DUT on Infinite Heatsink
V
GS
= 10V
0
0.1
0
10
20
30
Q
g
(nC)
Figure 11. Gate Charge
40
50
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
4 of 7
August 2016
© Diodes Incorporated
DMTH4005SK3
Document number: DS38212
Rev. 3 – 2
DMTH4005SK3
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
0.001
D=0.01
D=0.005
D=Single Pulse
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 1.5
℃
/W
Duty Cycle, D = t1 / t2
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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August 2016
© Diodes Incorporated
DMTH4005SK3
Document number: DS38212
Rev. 3 – 2
DMTH4005SK3
Package Outline Dimensions
TO252 (DPAK)
E
A
b3
7°± 1°
c
L3
TO252 (DPAK)
Dim Min
Max Typ
2.19 2.39 2.29
A1
0.00 0.13 0.08
A2
0.97 1.17 1.07
A
D
A2
H
L4
b
0.64 0.88
0.783
b2
0.76 1.14 0.95
b3
5.21 5.46 5.33
c
D
0.45 0.58
0.531
6.00 6.20 6.10
e
D1
5.21
–
–
–
b( 3x)
e
–
2.286
b2( 2x)
E
6.45 6.70 6.58
0.508
E1
4.32
–
–
Gauge Plane
H
L
9.40 10.41 9.91
1.40 1.78 1.59
D1
Seating Plane
E1
L3
0.88 1.27 1.08
L4
0.64 1.02 0.83
a
L
A1
0°
10°
–
2.74REF
All Dimensions in mm
Suggested Pad Layout
TO252 (DPAK)
X1
Dimensions Value
(in mm)
C
X
X1
Y
Y1
Y2
4.572
1.060
5.632
2.600
5.700
10.700
Y1
Y2
C
Y
X
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August 2016
© Diodes Incorporated
DMTH4005SK3
Document number: DS38212
Rev. 3 – 2
DMTH4005SK3
PORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
7 of 7
August 2016
© Diodes Incorporated
DMTH4005SK3
Document number: DS38212
Rev. 3 – 2
