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Green
DMTH4007LK3
40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Low R
DS(ON)
–
Ensures On State Losses are Minimized
Excellent Q
gd
x
R
DS(ON)
Product (FOM)
I
D
Max
BV
DSS
R
DS(ON)
Max
T
C
=
+
25°C
Advanced Technology for DC-DC Converters
7.3m
Ω @ V
GS
= 10V
9.8m
Ω @ V
GS
= 4.5V
70A
44A
40V
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Description and Applications
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Case: TO252
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish – Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
Power Management Functions
DC-DC Converters
Backlighting
TO252
Equivalent Circuit
Top View
Pin Out Top View
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMTH4007LK3-13
TO252
2,500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <
900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
= Manufacturer
’
s Marking
H4007L = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 15 = 2015)
WW = Week Code (01 to 53)
H4007L
YYWW
1 of 7
October 2015
© Diodes Incorporated
DMTH4007LK3
Document number: DS37357
Rev. 4 – 2
DMTH4007LK3
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
40
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
A
=
+
25
C
16.8
13.9
A
A
Continuous Drain Current, V
GS
= 10V (Note 5)
Continuous Drain Current, V
GS
= 10V (Note 6)
I
D
I
D
T
A
=
+
70
C
T
C
=
+
25
C
T
C
=
+
100
C
70
51
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L
= 0.1mH
80
80
20
20
A
A
I
S
I
DM
I
AS
A
Avalanche Energy, L
= 0.1mH
mJ
E
AS
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
2.6
Unit
W
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
47
°C/W
W
R
θ
JA
59
P
D
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
2.5
°C/W
R
θ
JC
-55 to +175
°C
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
V
GS
= 0V, I
D
= 1mA
40
–
–
–
–
–
1
V
BV
DSS
I
DSS
μ
A
nA
V
DS
= 32V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
–
±100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1
–
–
5
7
–
3
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 20A
V
GS
= 0V, I
S
= 20A
7.3
9.8
1.2
Static Drain-Source On-Resistance
–
Diode Forward Voltage
–
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
1895
485
20.9
0.62
12.4
29.1
5.9
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
C
iss
C
oss
C
rss
R
g
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
(V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
Q
g
nC
ns
V
DS
= 30V, I
D
= 20A
Q
gs
Q
gd
t
D(ON)
t
R
3.5
Gate-Drain Charge
5.4
Turn-On Delay Time
4.5
Turn-On Rise Time
V
DD
= 30V, V
GS
= 10V,
I
D
= 20A, R
G
= 3
Ω
16.2
3.5
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
30.6
28.1
ns
t
RR
I
F
= 20A, di/dt = 10
0A/μs
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 7
October 2015
© Diodes Incorporated
DMTH4007LK3
Document number: DS37357
Rev. 4 – 2
DMTH4007LK3
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
DS
= 5V
V
GS
= 10.0V
V
GS
= 5.0V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.5V
V
GS
= 3.0V
125
℃
150
℃
85
℃
25
℃
175
℃
-55
℃
V
GS
= 2.5V
0
0.0
1
1.5
2
2.5
3
3.5
4
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
50
45
40
35
30
25
20
15
10
5
12
10
8
V
GS
= 4.5V
V
GS
= 10V
6
4
I
D
= 20A
2
0
0
2
4
6
8
10
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
12
14
16
18
20
0
5
10 15 20 25 30 35 40 45 50
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
2.2
2
0.018
0.016
0.014
0.012
0.01
V
GS
= 4.5V
175
℃
150
℃
1.8
1.6
1.4
1.2
1
V
GS
= 10V, I
D
= 10A
125
℃
85
℃
V
GS
= 5V, I
D
= 5A
0.008
0.006
0.004
0.002
25
℃
-55
℃
0.8
0.6
0.4
0
5
10
15
20
25
30
-50 -25
0
25
50
75 100
125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
Figure 6. On-Resistance Variation with Temperature
3 of 7
October 2015
© Diodes Incorporated
DMTH4007LK3
Document number: DS37357
Rev. 4 – 2
DMTH4007LK3
0.02
0.015
0.01
0.005
0
3
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
I
D
= 1mA
V
GS
= 5V, I
D
= 5A
I
D
= 250
μ
A
V
GS
= 10V, I
D
= 10A
-50 -25
0
25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
50
75 100
125 150 175
-50 -25
0
25
50
75 100
125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
30
25
20
15
10
5
10000
1000
100
f=1MHz
V
GS
= 0V
C
iss
C
oss
T
A
= 85
o
C
T
A
= 125
o
C
T
A
= 150
o
C
T
A
= 175
o
C
T
A
= 25
o
C
T
A
= -55
o
C
1.2
C
rss
10
0
0
5
10
15
20
25
30
35
40
0
0.3
0.6
0.9
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
1000
100
10
R
DS(ON)
Limited
P
W
=10µs
P
W
=1µs
P
W
=100µs
P
W
=1ms
6
P
W
=10ms
P
W
=100ms
4
1
V
DS
= 30V, I
D
= 20A
T
J(Max)
= 175
℃
T
C
= 25
℃
Single Pulse
P
W
=1s
2
0.1
0.01
DUT on Infinite Heatsink
V
GS
=10V
0
0
10
20
30
0.1
1
10
100
Q
g
(nC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
4 of 7
October 2015
© Diodes Incorporated
DMTH4007LK3
Document number: DS37357
Rev. 4 – 2
DMTH4007LK3
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
0.001
R
θ
JC
(t)=r(t) * R
θ
JC
R
θ
JC
=2.22
℃
/W
Duty Cycle, D=t1 / t2
D=0.005
D=Single Pulse
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
October 2015
© Diodes Incorporated
DMTH4007LK3
Document number: DS37357
Rev. 4 – 2
DMTH4007LK3
Package Outline Dimensions
TO252 (DPAK)
E
A
b3
7°±1°
c
L3
TO252 (DPAK)
Dim Min
Max Typ
2.19 2.39 2.29
A1
0.00 0.13 0.08
A2
0.97 1.17 1.07
A
D
A2
H
L4
b
0.64 0.88
0.783
b2
0.76 1.14 0.95
b3
5.21 5.46 5.33
c
D
0.45 0.58
0.531
6.00 6.20 6.10
e
D1
5.21
–
–
–
b( 3x)
e
–
2.286
b2( 2x)
E
6.45 6.70 6.58
0.508
E1
4.32
–
–
Gauge Plane
H
L
9.40 10.41 9.91
1.40 1.78 1.59
D1
Seating Plane
E1
L3
0.88 1.27 1.08
L4
0.64 1.02 0.83
a
L
A1
0°
10°
–
2.74REF
All Dimensions in mm
Suggested Pad Layout
TO252 (DPAK)
X1
Y1
Dimensions Value
(in mm)
C
X
X1
Y
Y1
Y2
4.572
1.060
5.632
2.600
5.700
10.700
Y2
C
Y
X
6 of 7
October 2015
© Diodes Incorporated
DMTH4007LK3
Document number: DS37357
Rev. 4 – 2
DMTH4007LK3
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
7 of 7
October 2015
© Diodes Incorporated
DMTH4007LK3
Document number: DS37357
Rev. 4 – 2
