Diodes-Incorporated-DMTH4007SPD-13
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DMTH4007SPD
40V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Rated to +175°C
–
Ideal for High Ambient Temperature
Environments
I
D
max
T
C
= +25°C
(Note 9)
45A
BV
DSS
R
DS(ON)
max
8.6m
Ω
@ V
GS
= 10V
High Conversion Efficiency
Low R
DS(ON)
–
Minimizes On State Losses
Low Input Capacitance
40V
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
Case: PowerDI5060-8
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Backlighting
Power Management Functions
DC-DC Converters
S1
G1
D1
D2
S2
D1
S1
D1
D2
D2
S2
G2
G2
G1
Pin1
Bottom View
Pin Out
Top View
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
DMTH4007SPD-13
Case
PowerDI5060-8
Packaging
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3.
Halogen and Antimony free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm tot
al Br + Cl) and
<1000ppm antimony compounds.
Marking Information
D1 D1 D2 D2
= Manufacturer’s Marking
H4007SD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 14 = 2014)
H4007SD
WW = Week (01 – 53)
YY WW
S1 G1 S2 G2
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November 2015
© Diodes Incorporated
DMTH4007SPD
Document number: DS37359
Rev. 3 – 2
DMTH4007SPD
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
40
Units
V
V
Gate-Source Voltage
±20
V
GSS
T
C
= +25°C
(Note 9)
45
Continuous Drain Current (Note 6)
A
I
D
T
C
= +100°C
T
A
= +25°C
T
A
= +70°C
38.1
14.2
11.9
Continuous Drain Current (Note 5)
A
I
D
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current, L = 0.1mH
90
34
20
89
A
A
I
DM
I
S
A
I
AS
E
AS
Avalanche Energy, L = 0.1mH
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
2.6
Unit
W
T
A
= +25°C
T
C
= +25°C
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
57
37.5
°C/W
W
R
θ
JA
P
D
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
4
°C/W
°C
R
θ
JC
-55 to +175
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
40
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 1mA
V
DS
= 32V, V
GS
= 0V
µA
nA
±100
I
GSS
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
2
—
7.5
4
V
m
Ω
V
V
GS(th)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 17A
V
GS
= 0V, I
S
= 17A
Static Drain-Source On-Resistance
Diode Forward Voltage
—
—
8.6
—
0.85
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
2,026
702
84.8
0.46
41.9
10
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 30V, I
D
= 20A, V
GS
= 10V
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
nS
nC
Q
g
Gate-Source Charge
Q
gs
Q
gd
t
D(on)
t
r
11.5
7
Gate-Drain Charge
Turn-On Delay Time
11.5
15.6
8.8
Turn-On Rise Time
V
DD
= 30V, V
GS
= 10V,
Turn-Off Delay Time
I
D
= 20A, R
G
= 3
Ω
t
D(off)
t
f
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
29.9
23
t
rr
I
F
= 20A, di/dt = 1
00A/μs
Q
rr
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
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November 2015
© Diodes Incorporated
DMTH4007SPD
Document number: DS37359
Rev. 3 – 2
DMTH4007SPD
50
40
30
20
10
0
30
25
20
15
10
5
V
= 10V
GS
V
= 5.0V
GS
V
= 5.0V
DS
V
= 6.0V
GS
V
= 4.5V
GS
T
= 150°C
A
T
A
= 85°C
A
T
= 125°C
A
V
= 4.0V
T
= 25°C
GS
T
= -55°C
V
= 3.5V
A
GS
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
6
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
10
9
50
45
40
35
30
25
20
15
10
5
I
= 17A
D
8
V
= 10V
GS
7
6
5
4
0
0
5
10 15 20 25 30 35 40 45 50
I
D
, DRAIN SOURCE CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
Dr
a
in Current and Gate Voltage
2
4
6
8
10
12 14
16 18 20
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 4
T
y
pical Drain-Source On-Resistance
vs. Gate-Source Voltage
0.015
0.013
0.011
0.009
0.007
0.005
0.003
2.2
2
T
= 17
5
C
A
T
= 150
C
= 125
C
A
T
1.8
1.6
1.4
1.2
1
A
V
= 10V
GS
I =
20A
D
T
= 85
C
A
T
= 25
C
A
T
= -55
C
A
0.8
0.6
0.4
V
= 10V
GS
0
5
10
15
20
25
30
-50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPER
A
T
URE (
C)
Figure 6 On-Resistance Variation with
T
e
mperature
I
D
, DRAIN SOURCE CURRENT (A)
Figure 5
T
y
pical On-Resistance vs.
Drain Current and
T
e
m
p
e
r
a
ture
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November 2015
© Diodes Incorporated
DMTH4007SPD
Document number: DS37359
Rev. 3 – 2
DMTH4007SPD
0.02
0.015
0.01
0.005
0
4
3.5
3
I
= 1mA
D
V
I
= 10V
2.5
2
GS
= 15A
D
I
= 250µA
D
1.5
1
–
5
0
–
2
5
0
25 50 75
100 125 150
175
0.5
-50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
T
J
, JUNCTION TEMPER
A
T
URE (
C)
Figure 8 Gate Threshold Variation vs. Ambient
T
e
mperature
10000
30
25
20
15
10
5
C
iss
C
1000
oss
T
A
= 125
C
T
A
= 85
C
100
T
A
= 150
C
T
A
= 175
C
C
rss
T
A
= 25
C
T
A
= -55
C
f = 1MHz
0
10
0
5
10
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOL
T
AGE
(
V)
Figure 9 Diode Forward Voltage vs. Current
10
8
100
R
D
S
(
on)
Limi
t
e
d
P
= 10µs
W
P
= 1s
W
10
P
= 100ms
V
I
= 30V
W
DS
= 20A
6
D
P
= 10ms
W
P
= 1ms
W
4
P
= 100µs
W
1
P
= 1µs
W
T
J
(max)
= 175°C
T
C
= 25°C
2
V
GS
= 10V
Single Pul
s
e
DUT on 1 * MRP Board
0.1
0.1
0
0
5
10 15 20 25 30 35 40 45
Q
g
, TOTAL GATE CHARGE (nC)
100
1
10
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 12 SOA, Safe Operation Area
Figure 11 Gate Charge
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November 2015
© Diodes Incorporated
DMTH4007SPD
Document number: DS37359
Rev. 3 – 2
DMTH4007SPD
1
D = 0
.
9
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
0
5
D = 0
.
0
2
D = 0
.
0
1
0.01
D = 0
.
0
05
R
J
C
(t) = r(t) * R
J
C
R
J
C
= 4°C
/
W
Du
t
y
C
ycle, D = t1/ t2
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
t1, PULSE DURATION TIMES (sec)
Figure 13
Transient Thermal Resistance
0.01
0.1
1
10
Package Outline Dimensions
PowerDI5060-8 (Type C)
PowerDI5060-8 (Type C)
Dim Min Max
Typ
0.90 1.10 1.00
D
A
D1
A1
b
b1
b2
c
0
0.33
0.05 0.02
0.51 0.41
0( 4x)
0.300 0.366 0.333
0.20
0.23
0.35 0.25
0.33 0.277
5.15 BSC
x
c
A1
E1
E
D
y
Seating Plane
D1
D2
D3
E
4.85
1.40
–
4.95 4.90
1.60 1.50
e
–
3.98
1
01( 4x)
6.15 BSC
Ø1.000 Depth 0.07±0.030
E1
E2
e
k
k1
L
La
L1
L4
M
x
y
5.75
3.56
5.85 5.80
3.76 3.66
1.27BSC
b1( 8x)
DETAIL A
e/2
b( 8x)
1
–
–
–
1.27
–
0.56
0.51
0.51
0.05
–
3.50
–
–
b2( 2x)
D3
0.71 0.61
0.71 0.61
0.20 0.175
k
L
A
k1
L4
D2
E2
–
0.125
D2
M
DETAIL A
3.71 3.605
–
–
1.400
1.900
11°
La
L1
θ
θ1
10°
6°
12°
8°
7°
All Dimensions in mm
5 of 7
November 2015
© Diodes Incorporated
DMTH4007SPD
Document number: DS37359
Rev. 3 – 2
DMTH4007SPD
Suggested Pad Layout
PowerDI5060-8 (Type C)
X4
8
Value
Dimensions
(in mm)
1.270
0.660
0.820
0.610
3.910
1.650
1.650
4.420
1.270
1.020
3.810
6.610
C
G
G1
X
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y1
X3
X2
Y2
Y3
G1
X1
Y( 4x)
1
G
X
C
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November 2015
© Diodes Incorporated
DMTH4007SPD
Document number: DS37359
Rev. 3 – 2
DMTH4007SPD
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
7 of 7
November 2015
© Diodes Incorporated
DMTH4007SPD
Document number: DS37359
Rev. 3 – 2
