Diodes-Incorporated-DMTH4008LFDFW-13
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DMTH4008LFDFW
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Rated to +175°C
–
Ideal for High Ambient Temperature
Environments
I
D
Max
BV
DSS
R
DS(ON)
Max
T
A
= +25°C
100% Unclamped Inductive Switching, Test in Production
–
Ensures More Reliable and Robust End Application
Low R
DS(ON)
–
Ensures On State Losses Are Minimized
0.6mm Profile
–
Ideal for Low Profile Applications
PCB Footprint of 4mm
2
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
11.5m
Ω
@ V
GS
= 10V
18m
Ω
@ V
GS
= 4.5V
11.6A
9.3A
40V
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications:
Mechanical Data
Power Management Functions
DC-DC Converters
Backlighting
Case: U-DFN2020-6 (SWP) (Type F)
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.007 grams (Approximate)
D
U-DFN2020-6 (SWP) (Type F)
G
S
Pin Out
Bottom View
Bottom View
Top View
Internal Schematic
Ordering Information
(Note 4)
Part Number
Case
Quantity Per Reel
DMTH4008LFDFW-7
DMTH4008LFDFW-13
U-DFN2020-6 (SWP) (Type F)
U-DFN2020-6 (SWP) (Type F)
3,000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-free “Gre
en‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
8W = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: F = 2018)
8W
M = Month (ex: 9 = September)
Date Code Key
Year
2017
2018
2019
2020
2021
2022
2023
2024
Code
E
F
G
H
I
J
K
L
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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January 2018
© Diodes Incorporated
DMTH4008LFDFW
D
atasheet number: DS40056 Rev. 1 – 2
DMTH4008LFDFW
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
40
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
A
= +25°C
T
A
= +100°C
11.6
8.2
A
Continuous Drain Current (Note 7) V
GS
= 10V
I
D
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
Continuous Source-Drain Diode Current (Note 7)
Pulsed Source-Drain Diode Current (10
μ
s Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.3mH (Note 8)
80
A
A
I
DM
2.55
80
I
S
I
SM
I
AS
A
14.7
32.4
A
Avalanche Energy, L = 0.3mH (Note 8)
mJ
E
AS
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
Value
0.99
153
Unit
W
T
A
= +25°C
Steady State
P
D
R
θ
JA
P
D
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
2.35
T
A
= +25°C
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
64.5
°C/W
°C/W
°C
R
θ
JA
R
θ
JC
T
J,
T
STG
14.8
T
C
= +25°C
-55 to +175
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 9)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
40
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μA
V
DS
= 32V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
Zero Gate Voltage Drain Current
Gate-Source Leakage
µA
nA
±100
I
GSS
ON CHARACTERISTICS
(Note 9)
Gate Threshold Voltage
1
1.7
9.1
3
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 8.5A
V
GS
= 0V, I
S
= 10A
11.5
18
Static Drain-Source On-Resistance
—
—
12.9
0.8
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 10)
Input Capacitance
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1030
324
27
C
iss
C
oss
C
rss
R
g
V
DS
= 20V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
1.82
6.8
14.2
2.0
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
Q
g
nC
ns
V
DD
= 20V, I
D
= 10A
Q
gs
Q
gd
t
D(ON)
t
R
2.7
Gate-Drain Charge
Turn-On Delay Time
3.1
3.1
Turn-On Rise Time
V
DD
= 20V, V
GS
= 10V,
R
g
= 6
Ω
, I
D
= 10A
14.2
5.8
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
19.6
8.2
ns
t
RR
I
F
= 10A, di/dt = 100A/
μ
s
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
=+ 25°C
.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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January 2018
© Diodes Incorporated
DMTH4008LFDFW
D
atasheet number: DS40056 Rev. 1 – 2
DMTH4008LFDFW
30
25
20
15
10
5
30.0
25.0
20.0
15.0
10.0
5.0
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 6.0V
V
DS
= 5.0V
V
GS
= 10.0V
V
GS
= 3.5V
T
J
=125
℃
T
J
=150
℃
T
J
=85
℃
T
J
=25
℃
V
GS
= 3.0V
T
J
=175
℃
V
GS
=2.8V
T
J
=-55
℃
0
0.0
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.2
0.15
0.1
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
V
GS
= 4.5V
V
GS
= 10V
0.05
0
I
D
= 10A
0
5
10
15
20
25
30
0
4
8
12
16
20
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.018
0.016
0.014
0.012
0.01
2.2
2
V
GS
= 10V
1.8
1.6
1.4
1.2
1
150
℃
175
℃
V
GS
= 10V, I
D
= 10A
125
℃
85
℃
V
GS
= 4.5V, I
D
= 8.5A
25
℃
0.008
0.006
0.004
0.8
0.6
0.4
-55
℃
-50 -25
0
25
50
75 100
125 150 175
0
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 6.
On-Resistance Variation with Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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January 2018
© Diodes Incorporated
DMTH4008LFDFW
D
atasheet number: DS40056 Rev. 1 – 2
DMTH4008LFDFW
0.025
0.02
0.015
0.01
0.005
0
2.4
2.2
2
I
D
= 1mA
1.8
1.6
1.4
1.2
1
V
GS
= 4.5V, I
D
= 8.5A
I
D
= 250
μ
A
V
GS
= 10V, I
D
= 10A
0.8
0.6
0.4
-50 -25
0
25
50
75 100
125 150 175
-50 -25
0
25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
50
75 100
125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
30
25
20
15
10
5
f=1MHz
V
GS
= 0V
C
iss
1000
100
10
C
oss
T
A
= 85
o
C
T
A
= 125
o
C
C
rss
T
A
= 25
o
C
T
A
= 150
o
C
T
A
= 175
o
C
T
A
= -55
o
C
0
1
0
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
25
30
35
40
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9.
Diode Forward Voltage vs. Current
10
8
100
10
R
DS(ON)
Limited
P
W
=100µs
6
1
P
W
=1ms
P
W
=10ms
4
V
DS
= 20V, I
D
= 10A
P
W
=100ms
P
W
=1s
0.1
0.01
T
J(Max)
= 175
℃
T
C
= 25
℃
Single Pulse
DUT on 1*MRP Board
V
GS
= 10V
2
P
W
=10s
DC
10
0
0
2
4
6
8
10
12
14
16
0.01
0.1
1
100
Qg (nC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
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January 2018
© Diodes Incorporated
DMTH4008LFDFW
D
atasheet number: DS40056 Rev. 1 – 2
DMTH4008LFDFW
1
D=0.7
D=0.5
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
0.001
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 149
℃
/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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January 2018
© Diodes Incorporated
DMTH4008LFDFW
D
atasheet number: DS40056 Rev. 1 – 2
DMTH4008LFDFW
Package Outline Dimensions
U-DFN2020-6 (SWP) (Type F)
U-DFN2020-6 (SWP)
(Type F)
A1
A
Dim Min Max
0.59
0.65
A1
0.00 0.05
Typ
0.62
0.03
0.192
0.33
2.00
0.97
0.40
2.00
1.17
0.72
A3
A
Seating Plane
A3
b
D
–
–
0.28 0.38
1.95 2.05
L( 6x)
z1
e4
D
e3
D2
0.87 1.07
D2a
0.35 0.45
E
1.95 2.05
D2a
E2
1.07 1.27
E2a
0.67 0.77
D2
e
e3
e4
k
k1
L
0.65 BSC
0.70 BSC
0.325 BSC
E2
E2a
k1
E
k
—
—
—
—
0.15
0.375
0.225 0.355
0.305
z
z1
—
—
—
—
0.20
0.11
1
1
C0.15X45°
b( 6x)
e( 4x)
All Dimensions in mm
z( 4x)
Suggested Pad Layout
U-DFN2020-6 (SWP) (Type F)
X3
Y
C
X
Value
Dimensions
(in mm)
C
X
0.650
0.400
0.480
0.950
1.700
0.425
0.800
1.150
1.450
2.300
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y2
Y1 Y4
X1
Pin1
X2
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January 2018
© Diodes Incorporated
DMTH4008LFDFW
D
atasheet number: DS40056 Rev. 1 – 2
DMTH4008LFDFW
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
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January 2018
© Diodes Incorporated
DMTH4008LFDFW
D
atasheet number: DS40056 Rev. 1 – 2
Mouser Electronics
Authorized Distributor
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