Diodes-Incorporated-DMTH43M8LFG-13
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DMTH43M8LFG
Green
40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8
Product Summary
Features and Benefits
Rated to +175°C
Environments
—
Ideal for High Ambient Temperature
I
D
Max (Note 9)
T
C
= +25°C
BV
DSS
R
DS(ON)
Max
100% Unclamped Inductive Switching, Test in Production
—
Ensures More Reliable and Robust End Application
Low R
DS(ON)
—
Ensures On-State Losses are Minimized
Excellent Q
GD
× R
DS(ON)
Product (FOM)
3.0m
Ω @ V
GS
= 10V
5.0m
Ω @ V
GS
= 5V
100A
93A
40V
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Description and Applications
Mechanical Data
®
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) yet maintain superior switching performance, making it ideal
for high-efficiency power management applications.
Case: PowerDI
3333-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish
—
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
DC-DC Converters
Power Management
PowerDI3333-8
Pin 1
S
D
S
8
7
6
5
1
2
3
4
S
G
G
D
D
D
D
S
Top View
Bottom View
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
DMTH43M8LFG-7
DMTH43M8LFG-13
Case
Packaging
2000/Tape & Reel
3000/Tape & Reel
PowerDI3333-8
PowerDI3333-8
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
HK8 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 19 = 2019)
WW = Week Code (01 to 53)
HK8
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
January 2019
© Diodes Incorporated
DMTH43M8LFG
Document number: DS40743
Rev. 3
– 2
DMTH43M8LFG
Maximum Ratings
(@T
C
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
40
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
C
= +25°C
100
85
A
A
Continuous Drain Current (Notes 6 & 9) V
GS
= 10V
Continuous Drain Current (Note 5) V
GS
= 10V
I
D
T
C
= +100°C
T
A
= +25°C
T
A
= +100°C
24.0
16.9
I
D
I
DM
I
S
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Body Diode Forward Current (10
μ
s Pulse, Duty Cycle = 1%)
Avalanche Current, L = 1mH
400
3.05
400
18.2
165
A
A
A
I
SM
I
AS
E
AS
A
Avalanche Energy, L = 1mH
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
Value
2.62
Unit
W
T
A
= +25°C
T
C
= +25°C
P
D
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
57.8
°C/W
W
R
JA
65.2
P
D
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
2.3
°C/W
°C
R
JC
-55 to +175
T
J,
T
STG
Electrical Characteristics
(@T
J
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Symbol Min
Typ
Max
Unit
Test Condition
40
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 1mA
V
DS
= 32V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
Zero Gate Voltage Drain Current
Gate-Source Leakage
μ
A
nA
±100
I
GSS
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
1
1.5
2.3
3.4
—
2.5
3.0
5.0
6.0
9.0
1.0
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 20A
V
GS
= 5V, I
D
= 15A
V
GS
= 10V, I
D
= 20A
V
GS
= 5V, I
D
= 15A
V
GS
= 0V, I
S
= 20A
—
—
—
—
—
Static Drain-Source On-Resistance
Static Drain-Source On-Resistance (T
J
= +175°C) (Note 8)
R
DS(ON)
V
SD
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
0.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2798
904
88
C
iss
C
oss
C
rss
R
G
V
DS
= 20V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
2.44
40.1
5.2
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 20V, I
D
= 20A, V
GS
= 10V
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
G
nC
Q
GS
Q
GD
t
D(ON)
t
R
Gate-Drain Charge
8.8
Turn-On Delay Time
5.16
10.7
24.6
12.4
32.6
26.6
Turn-On Rise Time
V
DD
= 20V, V
GS
= 10V,
R
G
= 1.6
Ω
, I
D
= 20A
ns
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
t
RR
I
F
= 15A, di/dt = 100A/
μ
s
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limit.
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January 2019
© Diodes Incorporated
DMTH43M8LFG
Document number: DS40743
Rev. 3
– 2
DMTH43M8LFG
30
25
20
15
10
5
30.0
25.0
20.0
15.0
10.0
5.0
V
GS
= 10.0V
V
GS
= 5.0V
V
GS
= 4.5V
V
GS
= 4.0V
V
DS
= 5.0V
V
GS
= 3.2V
V
GS
= 3.0V
V
GS
= 2.8V
V
GS
= 3.5V
T
J
= 175
℃
T
J
= 150
℃
T
J
= 125
℃
T
J
= 25
℃
T
J
= -55
℃
T
J
= 85
℃
V
GS
= 2.5V
2.5
0
0.0
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
3
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1.Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
20
18
16
14
12
10
8
V
GS
= 5.0V
V
GS
= 10V
I
D
= 20A
6
4
2
0
0
5
10
15
20
25
30
2
4
6
8
10 12 14 16 18 20
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
5
2
1.8
1.6
1.4
1.2
1
V
GS
= 10V
4.5
4
V
GS
= 10V, I
D
= 20A
T
J
= 175
℃
T
J
= 150
℃
T
J
= 125
℃
3.5
3
T
J
= 85
℃
T
J
= 25
℃
T
J
= -55
℃
2.5
2
V
GS
= 5V, I
D
= 15A
0.8
0.6
0.4
1.5
1
0.5
-50 -25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
0
25 50 75
100 125 150 175
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
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January 2019
© Diodes Incorporated
DMTH43M8LFG
Document number: DS40743
Rev. 3
– 2
DMTH43M8LFG
2.5
2
6
5.5
5
4.5
4
V
GS
= 5V, I
D
= 15A
I
D
= 1mA
1.5
1
3.5
3
I
D
= 250
μ
A
2.5
2
V
GS
= 10V, I
D
= 20A
0.5
0
1.5
1
0.5
-50 -25
0
25 50 75
100 125 150 175
-50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs.
JunctionTemperature
Figure 7. On-Resistance Variation with Temperature
30
25
20
15
10
5
10000
1000
100
10
C
iss
V
GS
= 0V
C
oss
C
rss
T
J
= 175
℃
T
J
= 150
℃
T
J
= 85
℃
T
J
= 25
℃
T
J
= -55
℃
T
J
= 125
℃
f = 1MHz
0
1
0
0.3
0.6
0.9
1.2
0
5
10
15
20
25
30
35
40
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
1000
100
10
R
DS(ON)
Limited
P
W
= 1
μ
s
P
W
= 10
μ
s
P
W
= 100
μ
s
P
W
= 1ms
P
W
= 10ms
P
W
= 100ms
DC
6
4
1
T
J(MAX)
= 175
℃
V
DS
= 20V, I
D
= 20A
T
C
= 25
℃
Single Pulse
DUT on Infinite
Heatsink
2
0.1
0.01
V
GS
= 10V
0
0
10
20
Q
g
(nC)
Figure 11. Gate Charge
30
40
50
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
4 of 7
January 2019
© Diodes Incorporated
DMTH43M8LFG
Document number: DS40743
Rev. 3
– 2
DMTH43M8LFG
1
D=0.9
D=0.5
D=0.3
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
0.001
D=Single Pulse
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 2.3
℃
/W
Duty Cycle, D = t1 / t2
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
January 2019
© Diodes Incorporated
DMTH43M8LFG
Document number: DS40743
Rev. 3
– 2
DMTH43M8LFG
Package Outline Dimensions
PowerDI3333-8
A3
A1
PowerDI3333-8
Dim Min
Max Typ
0.75 0.85 0.80
A1
0.00 0.05 0.02
A
Seating Plane
A
A3
b
0.203
0.27 0.37 0.32
D
L( 4x)
E4
b2
0.15 0.25 0.20
3.25 3.35 3.30
D2
2.22 2.32 2.27
3.25 3.35 3.30
D2
D
1
E
Pin #1 ID
E2
1.56 1.66 1.61
E3
0.79 0.89 0.84
E4
1.60 1.70 1.65
b2( 4x)
E
e
L
L1
z
0.65
0.35 0.45 0.40
E3
E2
0.39
0.515
L1( 3x)
All Dimensions in mm
8
z( 4x)
b
e
Suggested Pad Layout
PowerDI3333-8
X3
X2
8
Y4
Dimensions Value
(in mm)
C
0.650
0.420
0.420
0.230
2.370
0.700
1.850
2.250
3.700
0.540
X
X1
Y1
X1
X2
X3
Y
Y2
Y3
Y1
Y2
Y3
Y4
Y
1
X
C
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January 2019
© Diodes Incorporated
DMTH43M8LFG
Document number: DS40743
Rev. 3
– 2
DMTH43M8LFG
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
7 of 7
January 2019
© Diodes Incorporated
DMTH43M8LFG
Document number: DS40743
Rev. 3
– 2
Mouser Electronics
Authorized Distributor
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