Diodes-Incorporated-DMTH6004LPS-13
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DMTH6004SPSQ
Green
60V 175°C
N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary
Features
Rated to +175°C
–
Ideal for High Ambient Temperature
Environments
I
D
BV
DSS
R
DS(ON)
Max
T
C
= +25°C
(Note 7)
100% Unclamped Inductive Switching (UIS) Test in Production
–
Ensures More Reliable and Robust End Application
Low R
DS(ON)
–
Minimizes Power Losses
60V
100A
3.1
mΩ @ V
GS
= 10V
Low Q
g
–
Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
The DMTH6004SPSQ is suitable for automotive applications
requiring specific change control; this part is AEC-Q101
qualified, PPAP capable, and manufactured in IATF 16949
certified facilities.
Description and Applications
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
DC motor controls
Synchronous rectifications
DC-DC converters
Mechanical Data
®
Package: PowerDI
5060-8
Package Material:
Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Site 1:
PowerDI5060-8
S
S
D
D
D
D
Pin1
S
G
Top View
Pin Configuration
Top View
Site 2:
Internal Schematic
Bottom View
D
PowerDI5060-8/SWP (Type UX)
S
D
S
S
G
D
D
D
Pin1
G
S
Top View
Pin Configuration
Top View
Bottom View
Internal Schematic
Ordering Information
(Note 4)
Packing
Part Number
Package
PowerDI5060-8
Qty.
2,500
2,500
Carrier
Tape & Reel
Tape & Reel
DMTH6004SPSQ-13
DMTH6004SPSQ-13
PowerDI5060-8/SWP (Type UX)
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more informa
tion about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
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© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS37561 Rev. 5 – 2
DMTH6004SPSQ
Marking Information
D
D
D
D
D
D
D
D
= Manufacturer’s Marking
H6004SS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 23 = 2023)
WW = Week (01 to 53)
H6004SS
YY WW
H6004SS
YY WW
S
S
S
G
S
S
S
G
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
60
Unit
V
Gate-Source Voltage
±20
V
V
GSS
Steady
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
25
21
Continuous Drain Current (Note 5)
State
A
A
I
D
I
D
100
100
Continuous Drain Current (Notes 6 & 7)
T
C
= +100°C
Maximum Continuous Body Diode Forward Current (Notes 6 & 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Pulsed Body Diode Forward Current (10
μ
s Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.2mH
100
400
400
45
A
A
I
S
I
DM
I
SM
I
AS
E
AS
A
A
200
Avalanche Energy, L=0.2mH
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
3.2
Unit
W
T
A
= +25°C
Steady State
T
C
= +25°C
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
47
°C/W
W
R
θ
JA
167
P
D
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
0.9
°C/W
°C
R
θ
JC
-55 to +175
T
J,
T
STG
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Package limited.
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Document number: DS37561 Rev. 5 – 2
DMTH6004SPSQ
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
—
1
60
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 1mA
μ
A
V
DS
= 48V, V
GS
= 0V
Zero Gate Voltage Drain Current
(Note 9)
100
±100
μ
A
V
DS
= 48V, V
GS
= 0V, T
J
= +125
°
C
V
GS
= ±20V, V
DS
= 0V
—
—
Gate-Source Leakage
nA
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
2
—
—
—
4
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 50A
V
GS
= 0V, I
S
= 20A
2.5
0.9
3.1
1.2
—
—
—
0.1
—
—
—
—
—
—
—
—
—
—
—
—
1.9
—
—
—
—
—
—
—
—
—
4556
1383
105.2
0.66
95.4
21.6
20.4
13.2
11.7
31
C
iss
C
oss
C
rss
R
g
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
V
DD
= 30V, I
D
= 90A,
V
GS
= 10V
Gate-Source Charge
nC
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 30V, V
GS
= 10V,
I
D
= 90A, R
G
= 3.5
Ω
ns
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
12
ns
50.5
80.8
t
RR
I
F
= 50A, di/dt = 100A/
μs
nC
Q
RR
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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Document number: DS37561 Rev. 5 – 2
DMTH6004SPSQ
200.0
180.0
160.0
140.0
120.0
100.0
80.0
30
25
20
15
10
5
V
DS
= 5.0V
V
GS
= 5.0V
V
GS
= 6.0V
V
GS
= 10.0V
T
A
= 175
o
C
T
A
= 85
o
C
T
A
= 25
o
C
T
A
= 150
o
C
T
A
= 125
o
C
V
GS
= 4.5V
V
GS
= 4.0V
60.0
40.0
T
A
= -55
o
C
20.0
V
GS
= 3.5V
0.0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
2
3
4
5
6
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
Figure 2
Typical Transfer Characteristic
10
5.00
4.00
3.00
2.00
1.00
0.00
9
8
7
6
5
4
3
2
1
0
V
GS
=10.0V
I
D
=50A
2
4
6
8
10 12 14 16 18 20
0
30
60
90
120
150
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 4 Typical Transfer Characteristic
Figure 3 Typical On-Resistance vs. Drain Current
and Gate Voltage
2.2
2
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
V
GS
= 10.0V
1.8
1.6
1.4
1.2
1
175
℃
125
℃
V
GS
= 10V, I
D
= 90A
150
℃
V
GS
= 20V, I
D
= 100A
0.8
0.6
0.4
-55
℃
85
℃
25
℃
-50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6 On-Resistance Variation with Temperature
10 20 30 40 50 60 70 80 90
100110120130140150
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs. Drain Current and
Temperature
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© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS37561 Rev. 5 – 2
DMTH6004SPSQ
3
2.5
2
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
I
D
= 1mA
V
GS
= 10V, I
D
= 90A
I
D
= 250µA
1.5
1
V
GS
= 20V, I
D
= 100A
0.5
-50 -25
0
25
50
75 100
125 150 175
-50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8 Gate Threshold Variation vs. Temperature
C
iss
Figure 7 On-Resistance Variation with Temperature
150
120
90
60
30
0
10000
1000
100
C
oss
T
A
= 175
o
C
T
A
= 150
o
C
T
A
= 125
o
C
T
A
= 85
o
C
T
A
= 25
o
C
T
A
= -55
o
C
C
rss
f=1MHz
10
0
5
10 15 20 25 30 35 40 45 50 55 60
V
DS
, DRAIN-SOURCE VOLTAGE(V)
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 10 Typical Junction Capacitance
Figure 9 Diode Forward Voltage vs. Current
10
1000
100
10
R
DS(ON)
Limited
P
W
=1µs
8
6
4
2
0
P
W
=DC
P
W
=100ms
P
W
=10ms
V
DS
=30V, I
D
=90A
P
W
=1ms
P
W
=100µs
T
J(Max)
= 175
℃
1
T
C
= 25
℃
Single Pulse
P
W
=10µs
DUT on Infinite Heatsink
V
GS
= 10V
0.1
0
10 20 30 40 50 60 70 80 90
100
Qg (nC)
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11 Gate Charge
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© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS37561 Rev. 5 – 2
DMTH6004SPSQ
1
D=0.9
D=0.7
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.01
0.001
R
θ
JC
(t)=r(t) * R
θ
JC
R
θ
JC
=0.9
℃
/W
Duty Cycle, D=t1/t2
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS37561 Rev. 5 – 2
DMTH6004SPSQ
Package Outline Dimensions
Site 1:
PowerDI5060-8
PowerDI5060-8
Dim
A
A1
b
b2
b3
c
Min
0.90
0.00
0.33
0.200
0.40
0.230
Max
1.10
0.05
0.51
0.350 0.273
0.80 0.60
0.330 0.277
5.15 BSC
5.10
4.10
4.30
6.15 BSC
6.00
3.68
4.39
1.27 BSC
0.71
0.71
0.200 0.175
4.035 3.635
1.40
12°
8°
Typ
1.00
D
D1
Detail A
c
0( 4X)
A1
0.41
E1 E
D
e
D1
D2
D3
E
E1
E2
E3
e
G
K
L
L1
M
4.70
3.70
3.90
4.90
3.90
4.10
01 (
4X)
1
5.60
3.28
3.99
5.80
3.48
4.19
b (
8X)
L
e
/
2
1
b2 (
4X)
D3
K
0.51
0.51
0.51
0.100
3.235
1.00
10°
0.61
0.61
A
D2
b3 (
4X)
E3
E2
M
M1
M1
Θ
Θ1
1.21
11°
7°
Detail A
G
L1
6°
All Dimensions in mm
Site 2:
PowerDI5060-8/SWP (Type UX)
D
D1
PowerDI5060-8/SWP
(Type UX)
Dim
Min
Max
Typ
A
A1
b
b2
b4
c
0.90
0
0.30
0.20
1.10 1.00
0.05
—
0.50 0.41
0.35 0.25
0.25REF
E1
E
A1
S
e
a
t
ing
P
l
ane
1.400
0.230 0.330 0.277
5.15 BSC
1.900
c
D
e
D1
D2
D2a
E
4.70
3.56
3.78
5.10 4.90
3.96 3.76
4.18 3.98
1
1
6.40 BSC
Ø1.000 Depth 0.07
±
0
.030
e
/
2
E1
E2
5.60
3.46
6.00 5.80
3.86 3.66
b( 8x)
L
D
E
T
A
IL A
E2a
4.195 4.595 4.395
e
k
1.27BSC
—
1.05
—
k
b2( 2x)
D2a
D2
L
0.635 0.835 0.735
0.635 0.835 0.735
0.200 0.400 0.300
0.050REF
0.025 0.225 0.125
3.205 4.005 3.605
La
L1
L1a
L4
M
A
L4
M
E2
E
2
a
D
E
T
A
IL A
θ
θ1
10°
6°
12°
8°
11°
7°
La
All Dimensions in mm
L1
b4( 8x)
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© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS37561 Rev. 5 – 2
DMTH6004SPSQ
Suggested Pad Layout
Site 1:
PowerDI5060-8
X4
Dimensions
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
Y2
C
G
G1
X
X3
Y3
Y1
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
X2
Y5
Y4
X1
Y7
G1
C
Y6
Y(
4
x)
X
G
Site 2:
PowerDI5060-8/SWP (Type UX)
X3
Value
Dimensions
(in mm)
1.270
0.660
0.820
0.610
4.100
5.190
4.420
1.270
1.020
3.810
6.610
C
G
G1
X
X1
X2
X3
Y
Y1
Y2
Y3
Y1
X2
X1
Y2
Y3
G1
Y(
4
x)
X
C
G
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© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS37561 Rev. 5 – 2
DMTH6004SPSQ
IMPORTANT NOTICE
DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH
1.
REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF
MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY
RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
2.
The Information contained her
ein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any
product described herein. This document is intended for skilled and technically trained engineering customers and users who design wi
th Diodes’
products. Diodes’ products may be used to facilitate safety
-related applications; however, in all instances customers and users are responsible for
(a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for
their intended applications,
(c) ensuring their applications, which incorporate Diodes’ products, comp
ly the applicable legal and regulatory requirements as well as safety and
functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control
techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their
applications.
3.
Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes
from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such
use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmles
s against all damages and
liabilities.
4.
Products described herein may be covered by one or more United States, international or foreign patents and pending patent
applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks
and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties
(including third parties whose products and services may be
described in this document or on Diodes’ website) under this document.
5.
Diodes’
products
are
provided
subject
to
Diodes’
Standard
Terms
and
Conditions
of
Sale
(
https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/
)
or other applicable terms. This document does not
alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any
products purchased through unauthorized sales channel.
6.
Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sa
le is
prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contravention of a
ny applicable laws or
regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or
penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless
against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with
the applicable laws and regulations, as well as any unintended or unauthorized application.
7.
While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain
technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and
Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make
modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described
herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document
is the final and determinative format released by Diodes.
8.
Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is
prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such
unauthorized use.
9. This Notice may be periodically updated with the most recent version available at
https://www.diodes.com/about/company/terms-and-
The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries.
All other trademarks are the property of their respective owners.
© 2023 Diodes Incorporated. All Rights Reserved.
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July 2023
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© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS37561 Rev. 5 – 2
