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DMTH6005LPSQ
Green
60V +175°C
N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary
Features
Rated to +175
C
–
Ideal for High Ambient Temperature
Environments
I
D
100% Unclamped Inductive Switching
–
Ensures More Reliable
and Robust End Application
Low R
DS(ON)
–
Minimizes Power Losses
BV
DSS
R
DS(ON)
Max
5.5
mΩ @ V
GS
= 10V
T
C
= +25°C
(Note 5)
60V
100A
Low Q
g
–
Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
The DMTH6005LPSQ is suitable for automotive applications
requiring specific change control; this part is AEC-Q101
qualified, PPAP capable, and manufactured in IATF 16949
certified facilities.
Description and Applications
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Mechanical Data
Package: PowerDI
®
5060-8
High-frequency switching
Sync rectification
Package Material:
Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
DC-DC converters
Site 1:
PowerDI5060-8
S
S
D
D
D
D
Pin1
S
G
Top View
Pin Configuration
Top View
Site 2:
Bottom View
Internal Schematic
D
PowerDI5060-8/SWP (Type UX)
S
D
S
S
G
D
D
D
Pin1
G
S
Top View
Pin Configuration
Bottom View
Top View
Internal Schematic
Ordering Information
(Note 4)
Packing
Part Number
Package
Qty.
Carrier
DMTH6005LPSQ-13
DMTH6005LPSQ-13
PowerDI5060-8
PowerDI5060-8/SWP (Type UX)
2500
2500
Tape & Reel
Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/
for more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl
) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
5. Package limited.
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July 2023
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© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS38359 Rev. 3 – 2
DMTH6005LPSQ
Marking Information
D
D
D
D
D
D
D
D
= Manufacturer’s Marking
H6005LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 23 = 2023)
WW = Week (01 to 53)
H6005LS
YY WW
H6005LS
YY WW
S
S
S
G
S
S
S
G
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
Value
60
Unit
V
V
DSS
V
GSS
Gate-Source Voltage
±20
V
T
A
= +25
C
T
A
= +70
C
20.6
17.2
Continuous Drain Current (Note 6)
A
I
D
T
C
= +25
C
(Note 5)
100
Continuous Drain Current (Note 7)
A
I
D
90
100
160
14.8
98
T
C
= +100
C
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 1mH
A
A
I
S
I
DM
I
AS
A
Avalanche Energy, L = 1mH
mJ
E
AS
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Symbol
P
D
Value
3.2
Unit
W
T
A
= +25
C
T
C
= +25
C
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
47
°C/W
W
R
θ
JA
150
1
P
D
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
°C/W
°C
R
θ
JC
-55 to +175
T
J
, T
STG
Notes:
5. Package limited.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
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Document number: DS38359 Rev. 3 – 2
DMTH6005LPSQ
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
60
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 1mA
V
DS
= 48V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
μ
A
nA
±100
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1
—
3
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 50A
V
GS
= 6V, I
D
= 20A
V
GS
= 4.5V, I
D
= 12.5A
V
GS
= 0V, I
S
= 50A
—
—
—
—
4.4
5.7
7.7
0.9
5.5
7.2
10
—
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2962
965.2
59.8
0.66
47.1
23.1
10.2
12.5
8.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Q
g
Q
g
nC
ns
V
DD
= 30V, I
D
= 50A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
9.4
V
DD
= 30V, V
GS
= 10V,
I
D
= 30A, R
G
= 3.3
Ω
Turn-Off Delay Time
22
t
D(OFF)
t
F
Turn-Off Fall Time
8.9
Body Diode Reverse-Recovery Time
ns
t
RR
40.4
49.7
I
F
= 30A, di/dt = 10
0A/μs
Body Diode Reverse-Recovery Charge
nC
Q
RR
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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Document number: DS38359 Rev. 3 – 2
DMTH6005LPSQ
50.0
40.0
30.0
20.0
10.0
0.0
30
25
20
15
10
5
V
GS
= 10.0V
V
GS
= 6.0V
V
DS
= 5V
V
GS
= 4.0V
V
GS
= 5.0V
V
GS
= 4.5V
125
o
C
150
o
C
V
GS
= 3.5V
V
GS
= 3.0V
85
o
C
25
o
C
175
o
C
-55
o
C
0
1
2
3
4
5
6
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.01
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0.06
0.05
0.04
0.03
0.02
0.01
0
V
GS
= 4.5V
V
GS
= 6.0V
V
GS
= 10V
I
D
= 50A
I
D
= 20A
I
D
= 12.5A
0
5
10 15 20 25 30 35 40 45 50
I
D
, DRAIN-SOURCE CURRENT (A)
0
4
8
12
16
20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
0.01
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
2
1.8
1.6
1.4
1.2
1
V
GS
= 10V
175
o
C
150
o
C
125
o
C
85
o
C
25
o
C
V
GS
= 10V, I
D
= 50A
-55
o
C
V
GS
= 4.5V, I
D
= 12.5A
0.8
0.6
10 20 30 40 50 60 70 80 90
100
I
D
, DRAIN CURRENT (A)
-50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Junction
Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
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© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS38359 Rev. 3 – 2
DMTH6005LPSQ
0.014
0.012
0.01
4
3.5
3
V
GS
= 4.5V, I
D
= 12.5A
I
D
= 1mA
2.5
2
0.008
0.006
0.004
0.002
0
I
D
= 250µA
1.5
1
V
GS
= 10V, I
D
= 50A
0.5
0
-50 -25
0
25 50 75
100 125 150 175
-50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Junction
Temperature
Figure 8. Gate Threshold Variation vs. Junction
Temperature
100
90
80
70
60
50
40
30
20
10
0
10000
1000
100
f = 1MHz
V
GS
= 0V
C
iss
C
oss
T
J
= 85
o
C
T
J
= 125
o
C
T
J
= 150
o
C
T
J
= 25
o
C
C
rss
T
J
= 175
o
C
T
J
= -55
o
C
10
0
5
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1000
100
10
10
9
8
7
6
5
4
3
2
1
0
P
W
= 1µs
R
DS(ON)
Limited
P
W
= 10µs
P
W
= 100µs
P
W
= 1ms
P
W
= 10ms
P
W
= 100ms
P
W
= 1s
1
T
J(Max)
= 175
℃
T
C
= 25
℃
Single Pulse
DUT on Infinite
Heatsink
V
DS
= 30V, I
D
= 50A
0.1
0.01
V
GS
= 10V
0
5
10 15 20 25 30 35 40 45 50
Q
g
(nC)
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
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© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS38359 Rev. 3 – 2
DMTH6005LPSQ
1
D=0.7
D=0.5
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
R
θ
JC
(t) = r(t) * R
θ
JC
D=0.005
D=Single Pulse
R
θ
JC
= 1
℃
/W
Duty Cycle, D = t1 / t2
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS38359 Rev. 3 – 2
DMTH6005LPSQ
Package Outline Dimensions
Site 1:
PowerDI5060-8
PowerDI5060-8
Dim
A
A1
b
b2
b3
c
Min
0.90
0.00
0.33
0.200
0.40
0.230
Max
1.10
0.05
0.51
0.350 0.273
0.80 0.60
0.330 0.277
5.15 BSC
5.10
4.10
4.30
6.15 BSC
6.00
3.68
4.39
1.27 BSC
0.71
0.71
0.200 0.175
4.035 3.635
1.40
12°
8°
Typ
1.00
D
D1
Detail A
c
0( 4X)
A1
0.41
E1 E
D
e
D1
D2
D3
E
E1
E2
E3
e
G
K
L
L1
M
4.70
3.70
3.90
4.90
3.90
4.10
01 (
4X)
1
5.60
3.28
3.99
5.80
3.48
4.19
b (
8X)
L
e
/
2
1
b2 (
4X)
0.51
0.51
0.51
0.100
3.235
1.00
10°
0.61
0.61
D3
K
A
D2
b3 (
4X)
E3
E2
M
M1
M1
Θ
Θ1
1.21
11°
7°
Detail A
6°
G
L1
All Dimensions in mm
Site 2:
PowerDI5060-8/SWP (Type UX)
D
D1
PowerDI5060-8/SWP
(Type UX)
Dim
Min
Max
1.10 1.00
0.05 —
0.50 0.41
0.35 0.25
Typ
A
A1
b
b2
b4
c
0.90
0
0.30
0.20
E1
E
A1
S
e
a
t
ing
P
l
ane
0.25REF
1.400
1.900
c
0.230 0.330 0.277
5.15 BSC
D
e
D1
D2
D2a
E
4.70
3.56
3.78
5.10 4.90
3.96 3.76
4.18 3.98
1
1
Ø1.000 Depth 0.07
±
0
.030
e
/
2
6.40 BSC
b( 8x)
L
E1
E2
5.60
3.46
6.00 5.80
3.86 3.66
D
E
T
A
IL A
E2a
4.195 4.595 4.395
e
k
L
La
L1
L1a
L4
M
1.27BSC
—
0.635 0.835 0.735
0.635 0.835 0.735
0.200 0.400 0.300
0.050REF
k
1.05
—
b2( 2x)
D2a
D2
A
L4
M
E2
E
2
a
0.025 0.225 0.125
3.205 4.005 3.605
D
E
T
A
IL A
θ
θ1
10°
6°
12°
8°
11°
7°
La
All Dimensions in mm
L1
b4( 8x)
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© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS38359 Rev. 3 – 2
DMTH6005LPSQ
Suggested Pad Layout
Site 1:
PowerDI5060-8
X4
Dimensions
Value (in mm)
Y2
X3
C
G
G1
X
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
Y3
Y1
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
X2
Y5
Y4
X1
Y7
G1
C
Y6
Y(
4
x)
X
G
Site 2:
PowerDI5060-8/SWP (Type UX)
X3
Value
Dimensions
(in mm)
1.270
0.660
0.820
0.610
4.100
5.190
4.420
1.270
1.020
3.810
6.610
C
G
G1
X
X1
X2
X3
Y
Y1
Y2
Y3
Y1
X2
X1
Y2
Y3
G1
Y(
4
x)
X
C
G
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© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS38359 Rev. 3 – 2
DMTH6005LPSQ
IMPORTANT NOTICE
DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH
1.
REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF
MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY
RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
2.
The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes
’ products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any
product described herein. This document is intended for skilled and technically trained engineering customers and users w
ho design with Diodes’
products. Diodes’ products may be used to facilitate safety
-related applications; however, in all instances customers and users are responsible for
(a) selecting the appropriate Diodes products for their applications, (b) evaluating
the suitability of Diodes’ products for their intended applications,
(c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements
as well as safety and
functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control
techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their
applications.
3.
Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes
from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such
use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against al
l damages and
liabilities.
4.
Products described herein may be covered by one or more United States, international or foreign patents and pending patent
applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks
and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties
(including third parties whose products and services may be described in this document or on Diodes’ website) under this docu
ment.
5.
Diodes’
products
are
provided
subject
to
Diodes’
Standard
Terms
and
Conditions
of
Sale
(
https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/
)
or other applicable terms. This document does not
alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any
products purchased through unauthorized sales channel.
6.
Diodes’ products
and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is
prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contravention of any
applicable laws or
regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or
penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless
against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with
the applicable laws and regulations, as well as any unintended or unauthorized application.
7.
While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain
technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and
Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make
modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described
herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document
is the final and determinative format released by Diodes.
8.
Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is
prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such
unauthorized use.
9. This Notice may be periodically updated with the most recent version available at
https://www.diodes.com/about/company/terms-and-
The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries.
All other trademarks are the property of their respective owners.
© 2023 Diodes Incorporated. All Rights Reserved.
9 of 9
July 2023
DMTH6005LPSQ
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS38359 Rev. 3 – 2
