Diodes-Incorporated-DMTH6010LPS-13
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DMTH6010LPS
Green
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary
Features
Rated to +175°C
–
Ideal for High Ambient Temperature
Environments
I
D
BV
DSS
R
DS(ON)
T
C
= +25°C
(Note 9)
100A
100% Unclamped Inductive Switching (UIS) Test in Production
–
Ensures More Reliable and Robust End Application
High Conversion Efficiency
8
mΩ @ V
GS
= 10V
12
mΩ @ V
GS
= 4.5V
60V
85A
Low R
DS(ON)
–
Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Description
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize R
DS(ON)
performance.
, yet maintain superior switching
Applications
Mechanical Data
®
Case: PowerDI
5060-8
Notebook Battery Power Management
Case Material:
Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
DC-DC Converters
Load Switch
PowerDI5060-8
S
S
D
D
D
D
Pin1
S
G
Top View
Pin Configuration
Top View
Bottom View
Internal Schematic
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMTH6010LPS-13
PowerDI5060-8
2,500 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
D
D
D
D
=Manufacturer
’
s Marking
H6010LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 19 = 2019)
WW = Week Code (01 to 53)
H6010LS
YY WW
S
S
S
G
PowerDI is a registered trademark of Diodes Incorporated.
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January 2019
© Diodes Incorporated
DMTH6010LPS
Document number: DS37354 Rev. 7 – 2
DMTH6010LPS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
60
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
T
C
= +100°C
13.5
10.4
Continuous Drain Current (Note 5)
A
A
I
D
I
D
100
75
Continuous Drain Current (Notes 6 & 9)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Pulsed Body Diode Forward Current (10
s Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.1mH
100
400
400
20
A
A
I
S
I
DM
I
SM
I
AS
A
A
Avalanche Energy, L=0.1mH
20
mJ
E
AS
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
2.6
Unit
W
T
A
= +25°C
T
C
= +25°C
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
57
°C/W
W
R
θ
JA
136
1.1
P
D
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
°C/W
R
θ
JC
-55 to +175
°C
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
V
GS
= 0V, I
D
= 1mA
—
—
—
60
—
—
—
1
V
BV
DSS
I
DSS
μ
A
nA
V
DS
= 48V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
±100
I
GSS
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
1
—
3
8
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 20A
V
GS
= 0V, I
S
= 20A
—
—
—
5.4
8.3
0.8
Static Drain-Source On-Resistance
12
1.2
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
—
—
—
0.2
—
—
—
—
—
—
—
—
—
—
2,090
746
38.5
0.59
19.3
41.3
6
—
—
—
1.5
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
(V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
Q
g
nC
ns
V
DS
= 30V, I
D
= 20A
Q
gs
Q
gd
t
D(ON)
t
R
8.8
Gate-Drain Charge
5.7
Turn-On Delay Time
4.3
Turn-On Rise Time
V
DD
= 30V, V
GS
= 10V,
I
D
= 20A, R
G
= 3
Ω
23.4
9.7
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
35.4
38.2
ns
t
RR
I
F
= 20A, di/dt = 10
0A/μs
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Limited by package.
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January 2019
© Diodes Incorporated
DMTH6010LPS
Document number: DS37354 Rev. 7 – 2
DMTH6010LPS
30
25
20
15
10
5
30.0
25.0
20.0
15.0
10.0
5.0
V
GS
=3.5V
V
DS
= 5V
V
GS
=3.0V
V
GS
=4.0V
V
GS
=4.5V
V
GS
=10V
125
℃
85
℃
25
℃
150
℃
175
℃
V
GS
=2.5V
-55
℃
V
GS
=2.2V
4 5
0
0.0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
2
3
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.01
0.009
0.008
0.007
0.006
0.005
0.004
0.02
0.018
0.016
0.014
0.012
0.01
V
GS
= 4.5V
150
℃
125
℃
175
℃
85
℃
V
GS
=4.5V
V
GS
=10V
25
℃
0.008
0.006
0.004
0.002
0
-55
℃
0
2
4
6
8
10 12 14 16 18 20
0
5
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance
vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (A)
Figure 4. Typical On-Resistance
vs. Drain Current and
Temperature
2
0.02
0.018
0.016
0.014
0.012
0.01
1.6
V
GS
=5V, I
D
=5A
1.2
0.8
0.4
V
GS
=10V, I
D
=10A
V
GS
=5V, I
D
=5A
0.008
0.006
0.004
0.002
0
V
GS
=10V, I
D
=10A
-50 -25
0
25
50
75 100
125 150 175
-50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 5. On-Resistance Variation with Temperature
Figure 6. On-Resistance Variation with Temperature
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January 2019
© Diodes Incorporated
DMTH6010LPS
Document number: DS37354 Rev. 7 – 2
DMTH6010LPS
30
25
20
15
10
5
2
1.8
1.6
1.4
1.2
1
V
GS
=0V, T
J
=125
℃
V
GS
=0V, T
J
=150
℃
I
D
=1mA
V
GS
=0V, T
J
=175
℃
V
GS
=0V, T
J
=85
℃
I
D
=250
μ
A
0.8
0.6
0.4
0.2
V
GS
=0V, T
J
=25
℃
V
GS
=0V, T
J
=-55
℃
0
-50 -25
0
25
50
75 100
125 150 175
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. Gate Threshold Variation vs. junction
Temperature
Figure 8. Diode Forward Voltage vs. Current
10000
1000
100
10
10
9
8
7
6
5
4
3
2
1
0
f=1MHz
C
iss
C
oss
V
DS
=30V, I
D
=20A
C
rss
1
0
10
20
30
40
0
5
10
15
20
25
30
35
40
45
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE
(nC)
Figure 10. Gate Charge
Figure 9. Typical Junction Capacitance
1000
100
10
R
DS(ON)
LIMITED
P
W
=1
μ
s
P
W
=10
μ
s
P
W
=100
μ
s
P
W
=1ms
P
W
=10ms
P
W
=100ms
DC
1
T
J(MAX)
=175
℃
T
C
=25
℃
Single Pulse
0.1
0.01
DUT on infinite
heatsink
V
GS
=10V
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11. SOA, Safe Operation Area
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January 2019
© Diodes Incorporated
DMTH6010LPS
Document number: DS37354 Rev. 7 – 2
DMTH6010LPS
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
0.001
R
θJC
(t)=r(t) * R
θJC
R
θJC
=1.05
℃
/W
Duty Cycle, D=t1 /
t2
D=Single Pulse
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 12. Transient Thermal Resistance
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January 2019
© Diodes Incorporated
DMTH6010LPS
Document number: DS37354 Rev. 7 – 2
DMTH6010LPS
Package Outline Dimensions
PowerDI5060-8
PowerDI5060-8
D
D1
Dim
A
A1
b
b2
b3
c
Min
0.90
0.00
0.33
0.200
0.40
0.230
Max
1.10
0.05
0.51
0.350 0.273
0.80 0.60
Typ
1.00
–
Detail A
c
0( 4X)
A1
0.41
0.330 0.277
5.15 BSC
E1 E
D
e
D1
D2
D3
E
E1
E2
E3
e
G
K
L
L1
M
4.70
3.70
3.90
5.10
4.10
4.30
4.90
3.90
4.10
01 (
4X)
1
6.15 BSC
6.00
3.68
5.60
3.28
3.99
5.80
3.48
4.19
b (
8X)
L
e/2
4.39
1
b2 (
4X)
1.27 BSC
0.71
0.51
0.51
0.51
0.100
3.235
1.00
10º
0.61
–
0.61
D3
K
–
0.71
0.200 0.175
4.035 3.635
1.40
12º
8º
A
D2
b3 (
4X)
E3
E2
M
M1
θ
θ
1
1.21
11º
7º
M1
Detail A
6º
G
L1
All Dimensions in mm
Suggested Pad Layout
PowerDI5060-8
X4
X3
Dimensions
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
Y2
Y1
C
G
G1
X
Y3
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
X2
Y5
Y4
X1
Y7
G1
C
Y6
Y( 4x)
X
G
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January 2019
© Diodes Incorporated
DMTH6010LPS
Document number: DS37354 Rev. 7 – 2
DMTH6010LPS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Dio
d
e
s Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising o
u
t
o
f, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
7 of 7
January 2019
© Diodes Incorporated
DMTH6010LPS
Document number: DS37354 Rev. 7 – 2
