Diodes-Incorporated-DMTH8008LFGQ-7
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DMTH8008LFGQ
80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Rated to +175°C
Environments
Low R
DS(ON)
–
Ensures On-State Losses are Minimized
Excellent Q
gd
× R
DS(ON)
Product (FOM)
Advanced Technology for DC-DC Converts
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
–
Ideal for High Ambient Temperature
I
D
Max
BV
DSS
R
DS(ON)
Max
T
C
= +25°C
70A
57A
6.9m
Ω @ V
GS
= 10V
10.4m
Ω @ V
GS
= 4.5V
80V
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
100% Unclamped Inductive Switching (UIS) Test in Production
–
Ensures More Reliable and Robust End Application
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DMTH8008LFGQ is suitable for automotive applications
requiring specific change control; this part is AEC-Q101
qualified, PPAP capable, and manufactured in IATF 16949
certified facilities.
Description and Applications
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Mechanical Data
®
Case: PowerDI
3333-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminal Finish
–
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
Backlighting
Power Management Functions
DC-DC Converters
PowerDI3333-8
Pin 1
S
S
D
S
8
7
6
5
1
2
3
4
G
G
D
D
D
D
S
Top View
Pin-Out
Top View
Bottom View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMTH8008LFGQ-7
DMTH8008LFGQ-13
2,000/Tape & Reel
3,000/Tape & Reel
PowerDI3333-8
PowerDI3333-8
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information
about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
HX8 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last
Two Digits of Year (ex: 20 = 2020)
WW = Week Code (01 to 53)
HX8
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
April 2020
© Diodes Incorporated
DMTH8008LFGQ
Document number: DS42441
Rev. 3 – 2
DMTH8008LFGQ
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
80
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
C
= +25°C
70
49
A
A
Continuous Drain Current (Note 7) V
GS
= 10V
Continuous Drain Current (Note 6) V
GS
= 10V
I
D
I
D
T
C
= +100°C
T
A
= +25°C
T
A
= +100°C
17
12
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
Pulsed Body Diode Forward Current (10
μ
s Pulse, Duty Cycle = 1%)
Avalanche Current, L = 1mH (Note 8)
45
280
280
18
A
A
I
S
I
DM
I
SM
I
AS
E
AS
A
A
Avalanche Energy, L = 1mH (Note 8)
162
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
1.2
Unit
W
T
A
= +25°C
Steady State
T
A
= +25°C
Steady State
T
C
= +25°C
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
124
°C/W
W
R
JA
P
D
2.8
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
53
°C/W
W
R
JA
P
D
50
3
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
°C/W
°C
R
JC
T
J,
T
STG
-55 to +175
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
80
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 1mA
Zero Gate Voltage Drain Current
Gate-Source Leakage
μ
A
nA
V
DS
= 64V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
±100
I
GSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
1.2
—
—
—
—
2.5
6.9
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 1mA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 10A
V
GS
= 0V, I
S
= 20A
5.3
7.9
0.8
Static Drain-Source On-Resistance
10.4
1.2
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2254
745
31
—
—
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= 40V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
1.98
18.3
37.7
5.3
7.8
6.9
12
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
Q
g
nC
ns
V
DS
= 40V, I
D
= 14A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 40V, V
GS
= 10V,
I
D
= 14A, R
G
= 6
Ω
37
Turn-Off Delay Time
t
D(OFF)
t
F
21
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
42
ns
t
RR
I
S
= 14A, di/dt = 10
0A/μs
53
nC
Q
RR
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C
.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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April 2020
© Diodes Incorporated
DMTH8008LFGQ
Document number: DS42441
Rev. 3 – 2
DMTH8008LFGQ
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
GS
= 4.0V
V
GS
= 4.5V
V
DS
= 5.0V
V
GS
= 6.0V
V
GS
= 3.5V
V
GS
= 10V
V
GS
= 3.2V
V
GS
= 3.0V
V
GS
= 2.8V
T
J
= 175
℃
T
J
= 150
℃
T
J
= 125
℃
T
J
= 85
℃
T
J
= 25
℃
T
J
= -55
℃
V
GS
= 2.6V
0.0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0.000
0.1
0.08
0.06
0.04
0.02
0
V
GS
= 4.5V
V
GS
= 10V
I
D
= 20A
I
D
= 10A
0
5
10
15
20
25
30
2
4
6
8
10 12 14 16 18 20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
2.4
2.2
2
0.016
0.014
0.012
0.01
V
GS
= 10V
V
GS
= 10V, I
D
= 20A
T
J
= 175
℃
T
J
= 150
℃
1.8
1.6
1.4
1.2
1
0.008
0.006
0.004
0.002
0
T
J
= 125
℃
T
J
= 85
℃
V
GS
= 4.5V, I
D
= 10A
T
J
= 25
℃
T
J
= -55
℃
0.8
0.6
0.4
0
5
10
15
20
25
30
-50 -25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
0
25 50 75
100 125 150 175
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
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April 2020
© Diodes Incorporated
DMTH8008LFGQ
Document number: DS42441
Rev. 3 – 2
DMTH8008LFGQ
0.02
0.015
0.01
0.005
0
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
I
D
= 1mA
V
GS
= 4.5V, I
D
= 10A
I
D
= 250
μ
A
V
GS
= 10V, I
D
= 20A
0.8
0.6
0.4
-50 -25
0
25 50 75
100 125 150 175
-50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
Figure 7. On-Resistance Variation with Temperature
V
GS
= 0V
10000
30
25
20
15
10
5
f = 1MHz
C
iss
1000
100
10
C
oss
C
rss
T
J
= 175
o
C
T
J
= 150
o
C
T
J
= 125
o
C
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= -55
o
C
1
1000
100
10
0
0
10
20
30
40
50
60
70
80
0
0.3
0.6
0.9
1.2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
R
DS(ON)
Limited
6
P
W
= 1µs
P
W
= 10µs
P
W
= 100µs
4
V
DS
= 40V, I
D
= 14A
T
J(Max)
= 175
℃
T
C
= 25
℃
Single Pulse
DUT on Infinite
Heatsink
P
W
= 1ms
P
W
= 10ms
P
W
= 100ms
1
2
DC
V
GS
= 10V
0
0.1
0
5
10
15
20
25
30
35
40
0.1
1
10
100
Q
g
(nC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
4 of 7
April 2020
© Diodes Incorporated
DMTH8008LFGQ
Document number: DS42441
Rev. 3 – 2
DMTH8008LFGQ
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 47
℃
/W
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
100000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
April 2020
© Diodes Incorporated
DMTH8008LFGQ
Document number: DS42441
Rev. 3 – 2
DMTH8008LFGQ
Package Outline Dimensions
PowerDI3333-8
A3
A1
PowerDI3333-8
Dim Min
Max Typ
A
Seating Plane
A
0.75 0.85 0.80
A1
0.00 0.05 0.02
A3
b
0.203
0.27 0.37 0.32
D
L(4x)
E4
b2
0.15 0.25 0.20
3.25 3.35 3.30
D2
2.22 2.32 2.27
3.25 3.35 3.30
D2
D
1
Pin #1 ID
E
E2
1.56 1.66 1.61
E3
0.79 0.89 0.84
E4
1.60 1.70 1.65
b2(4x)
E
e
L
L1
z
0.65
0.35 0.45 0.40
E3
E2
0.39
0.515
L1(3x)
All Dimensions in mm
8
z(4x)
b
e
Suggested Pad Layout
PowerDI3333-8
X3
X2
8
Y4
Dimensions Value
(in mm)
C
0.650
0.420
0.420
0.230
2.370
0.700
1.850
2.250
3.700
0.540
X
X1
Y1
X1
X2
X3
Y
Y2
Y3
Y1
Y2
Y3
Y4
Y
1
X
C
6 of 7
April 2020
© Diodes Incorporated
DMTH8008LFGQ
Document number: DS42441
Rev. 3 – 2
DMTH8008LFGQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without
further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or
use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights,
nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use
and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against
all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final
and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
7 of 7
April 2020
© Diodes Incorporated
DMTH8008LFGQ
Document number: DS42441
Rev. 3 – 2
Mouser Electronics
Authorized Distributor
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