Diodes-Incorporated-DNLS350E-13

Part #Diodes-Incorporated-DNLS350E-13
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Diodes-Incorporated-DNLS350E-13
Green  
DNLS350  
LOW VCE(SAT) NPN TRANSISTOR IN SOT223  
Features  
Mechanical Data  
BV

CEO

> 60V  
Case: SOT223  
I

C

= 3.0A High Continuous Current  
Case Material: Molded Plastic,
“Green”
Molding Compound.  
UL Flammability Rating 94V-0  
Extremely Low Equivalent On-Resistance; R

CE(SAT)

62m
Ω
at 2A  
Complementary PNP Type: DPLS350E  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish
–
Matte Tin Plated Leads. Solderable per  
MIL-STD-202, Method 208  
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
Weight: 0.112 grams (Approximate)  
Applications  
Ideal for Medium Power Switching or Amplification Applications  
SOT223  
C
E
B
C
C
B
E
Top View  
Top View  
Pin-Out  
Device Symbol  
Ordering Information
(Note 4)  
Product  
DNLS350E-13  
Compliance  
AEC-Q101  
Marking  
N35  
Reel Size (inches)  
13  
Tape Width (mm)  
Quantity per Reel  
12  
2,500  
Notes:  
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.  
2. See

r more information about Diodes Incorporated’s definitions of Halo
gen- and Antimony-free, “Green”  
and Lead-free.  
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at

Marking Information  
SOT223  
N35 = Product Type Marking Code  
YWW = Date Code Marking  
W
YW  
Y = Last Digit of Year (ex: 15 = 2015)  
WW = Week Code (01
–
52)  
N35  
1 of 8  
November 2015  
© Diodes Incorporated  
DNLS350E  
Document number: DS31231 Rev. 4 – 2  

DNLS350  
Absolute Maximum Ratings
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
V

CBO  

V

CEO  

V

EBO  

I

C  

Value  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
60  
50  
6
V
V
Continuous Collector Current  
Peak Pulse Collector Current  
Peak Pulse Base Current  
3
A
5
A
I

CM  

1
A
I

BM  

Thermal Characteristics
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Value  
Unit  
(Note 5)  
(Note 6)  
(Note 7)  
(Note 5)  
(Note 6)  
(Note 7)  
(Note 8)  
3
Power Dissipation  
2
1
W
P

D  

41.7  
Thermal Resistance, Junction to Ambient  
62.5  
°C/W  
R

θ
JA  

125  
Thermal Resistance, Junction to Leads  
15  
°C/W  
°C  
R

θ
JL  

Operating and Storage Temperature Range  
-55 to +150  
T

J,

T

STG  

ESD Ratings
(Note 9)  
Characteristic  
Electrostatic Discharge
–
Human Body Model  
Electrostatic Discharge
–
Machine Model  
Symbol  
ESD HBM  
ESD MM  
Value  
4,000  
400  
Unit  
V
JEDEC Class  
3A  
C
V
Notes:  
5. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured  
under still air conditions whilst operating in a steady-state.  
6. Same as Note (5), except mounted on 25mm x 25mm 2oz copper.  
7. Same as Note (5), except mounted on minimum recommended pad (MRP) layout.  
8. Thermal resistance from junction to solder-point (at the end of the collector lead).  
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  
2 of 8  
November 2015  
© Diodes Incorporated  
DNLS350E  
Document number: DS31231 Rev. 4 – 2  

DNLS350  
Thermal Characteristics and Derating Information  
70  
60  
50  
40  
30  
20  
10  
0
50  
T
=25°C  
a
m
b  
T
=25°C  
a
m
b  
25mm x 25mm  
2oz FR4  
40  
30  
20  
10  
0
50mm x 50mm  
2oz FR4  
D=0.5  
D=0.5  
Single Pulse  
D=0.05  
D=0.1  
Single Pulse  
D=0.05  
D=0.2  
D=0.2  
D=0.1  
1
100µ 1m
 
10m 100m  
1
10  
100  
1k  
100µ 1m
 
10m 100m  
10  
100  
1k  
Pulse Width (s)  
Pulse Width (s)  
Transient Thermal Impedance  
Transient Thermal Impedance  
3
.
0  
Single Pulse  
=25°C  
T
50mm x 50mm  
2oz FR4  
100  
10  
1
a
m
b  
2
.
5  
2
.
0  
1
.
5  
1
.
0  
0
.
5  
0
.
0  
25mm x 25mm  
2oz FR4  
50mm x 50mm  
2oz FR4  
25mm x 25mm  
2oz FR4  
100µ 1m
 
10m 100m  
1
10  
100  
1k  
0
20 40 60 80
 
100 120 140 160  
Pulse Width (s)  
T
e
mperature (°C)  
Pulse Power Dissipation  
Derating Curve  
3 of 8  
November 2015  
© Diodes Incorporated  
DNLS350E  
Document number: DS31231 Rev. 4 – 2  

DNLS350  
Electrical Characteristics
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 10)  
Emitter-Base Breakdown Voltage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
I

C

= 100µA  
50  
50  
6
V
V
  
  
  
  
100
  
50
  
100  
BV

CBO  

BV

CEO  

BV

EBO  

I

C

= 10mA  
I

E

= 100µA  
V
nA  
µA  
nA  
V

CB

= 50V, I

E

= 0  
Collector-Base Cutoff Current  
I

CBO  

I

EBO  

V

CB

= 50V, I

E

= 0, T

A

= +150°C  
V

EB

= 5V, I

C

= 0  
Emitter-Base Cutoff Current  
ON CHARACTERISTICS
(Note 10)  
200  
200  
100  
  
  
62  
  
  
V

CE

= 2V, I

C

= 0.5A  
V

CE

= 2V, I

C

= 1A  
V

CE

= 2V, I

C

= 2A  
I

C

= 0.5A, I

B

= 50mA  
I

C

= 1A, I

B

= 50mA  
I

C

= 2A, I

B

= 200mA  
I

C

= 2A, I

B

= 200mA  
I

C

= 2A, I

B

= 200mA  
V

CE

= 2V, I

C

= 1A  
DC Current Gain  
h

FE  

90  
Collector-Emitter Saturation Voltage  
170  
290  
145  
1.2  
1.1  
mV  
V

CE(SAT)  

Equivalent On-Resistance  
m
Ω  
V
R

CE(SAT)  

V

BE(SAT)  

V

BE(ON)  

Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
SMALL SIGNAL CHARACTERISTICS  
V
V

CE

= 5V, I

C

= 100mA,  
f = 100MHz  
Transition Frequency  
Output Capacitance  
100  
MHz  
pF  
f

T  

30  
C

obo  

V

CB

= 10V, f = 1MHz  
Note:  
10. Measured under pulsed
conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
.  
4 of 8  
November 2015  
© Diodes Incorporated  
DNLS350E  
Document number: DS31231 Rev. 4 – 2  

DNLS350  
Typical Electrical Characteristics
(@T

A

= +25°C, unless otherwise specified.)  
3.0  
2.5  
700  
600  
I
= 10mA  
= 8mA  
B
I
B
500  
400  
2.0  
1.5  
1.0  
I
= 6mA  
= 4mA  
B
I
300  
200  
B
I
= 2mA  
B
0.5  
0
100  
0
0
1
2
3
4
5
0.001  
0.01  
0.1  
1
10  
V

CE

, COLLECTOR-EMITTER VOLTAGE (V)  
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage  
0.3  
1.2  
1
0.25  
0.2  
0.15  
0.1  
0.8  
0.6  
0.4  
0.2  
0.05  
0
0
0.0001  
0.001  
0.01  
0.1  
1
10  
0.0001  
0.001  
0.01  
0.1  
1
10  
I

C

, COLLECTOR CURRENT (A)  
I

C

, COLLECTOR CURRENT (A)  
Fig. 4 Typical Collector-Emitter Saturation Voltage  
vs. Collector Current  
Fig. 5 Typical Base-Emitter Turn-On Voltage  
vs. Collector Current  
5 of 8  
November 2015  
© Diodes Incorporated  
DNLS350E  
Document number: DS31231 Rev. 4 – 2  

DNLS350  
Typical Electrical Characteristics
(Continued) (@T

A

= +25°C, unless otherwise specified.)  
100  
1.2  
1.0  
f = 1MHz  
0.8  
0.6  
0.4  
0.2  
0
10  
0.01  
0.1  
1
10  
100  
0.0001  
0.001  
0.01  
0.1  
1
10  
I

C

, COLLECTOR CURRENT (A)  
Fig. 6 Typical Base-Emitter Saturation Voltage  
vs. Collector Current  
V

R

, REVERSE VOLTAGE (V)  
Fig. 7 Typical Output Capacitance Characteristics  
240  
210  
180  
150  
120  
90  
V
= 5V  
CE  
60  
f = 100MHz  
30  
0
0
20  
40  
60  
80  
100  
I

C

, COLLECTOR CURRENT (mA)  
Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current  
6 of 8  
November 2015  
© Diodes Incorporated  
DNLS350E  
Document number: DS31231 Rev. 4 – 2  

DNLS350  
Package Outline Dimensions  
Please see AP02002 at

r the latest version.  
SOT223  
D
Q
b1  
C
SOT223  
Dim Min Max Typ  
1.55 1.65 1.60  
A1
0.010 0.15
 
0.05  
A
b
b1  
C
D
E
E1  
e
e1  
L
0.60 0.80 0.70  
2.90 3.10 3.00  
0.20 0.30 0.25  
6.45 6.55 6.50  
3.45 3.55 3.50  
6.90 7.10 7.00  
E
E1  
Gauge  
Plane  
0.25  
–
–
–
–
4.60  
2.30  
Seating  
Plane  
L
0.85 1.05 0.95  
0.84 0.94 0.89  
e1  
b
Q
e
All Dimensions in mm  
A
A1  
7°  
Suggested Pad Layout  
Please see AP02001 at

r the latest version.  
SOT223  
Dimensions Value
 
(in mm)  
X1  
C
C1  
X
2.30  
6.40  
1.20  
3.30  
1.60  
1.60  
8.00  
Y1  
C1 Y2  
Y
X1  
Y
Y1  
Y2  
C
X
7 of 8  
November 2015  
© Diodes Incorporated  
DNLS350E  
Document number: DS31231 Rev. 4 – 2  

DNLS350  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life
 
support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A
 
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2015, Diodes Incorporated  
8 of 8  
November 2015  
© Diodes Incorporated  
DNLS350E  
Document number: DS31231 Rev. 4 – 2