Diodes-Incorporated-DSS30101L-7
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DSS30101L
LOW V
CE(SAT)
NPN SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
•
•
•
•
•
Ideal for Medium Power Amplification and Switching
•
•
Case: SOT-23
Ultra Low Collector-Emitter Saturation Voltage
Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
“Green” Device (Note 2)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
•
ESD rating: 400V-MM, 8KV-HBM
•
Weight: 0.008 grams (approximate)
C
C
B
E
B
E
Top View
Device Symbol
Pin Configuration
Ordering Information
Part Number
Case
Packaging
DSS30101L-7
SOT-23
3000/Tape & Reel
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
Marking Information
ZN3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
ZN3
M = Month (ex: 9 = September)
Date Code Key
Year
2008
2009
2010
2011
2012
2013
2014
2015
Code
V
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 6
August 2010
© Diodes Incorporated
DSS30101L
Document number: DS31588 Rev. 3 – 2
DSS30101L
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CM
Value
Unit
V
V
V
A
50
30
5
Peak Pulse Current
2
Continuous Collector Current
1
A
I
C
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T
A
= 25°C
Symbol
P
D
R
θ
Value
600
Unit
mW
°C/W
°C
209
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
A
= 25°C
Operating and Storage Temperature Range
JA
-55 to +150
T
J
, T
STG
Notes:
3. Device
mounted on FR-4 PCB MRP
400
300
200
0.8
Single Pulse
(t) = r(t) * R
θ
JA
R
θ
JA
R
= 175°C/W
θ
JA
0.6
0.4
T
– T
= P * R
(t)
A
θ
JA
J
Duty Cycle, D = t
/t
1
2
R
= 209°C/W
JA
0.2
0
θ
100
0
0
20
40
60
80 100 120 140 160
C)
0.00001
0.001
0.1
10
1,000
t
1
, PULSE DUR
A
T
ION TIME (s)
T
A
, AMBIENT TEMPERATURE (
°
Fig. 2 Single Pulse Maximum Power Dissipation
Fig. 1 Power Dissipation vs. Ambient
T
emperature (Note 3)
1
D = 0.9
D = 0.7
D = 0.5
0.1
D = 0.3
D = 0.1
R
(t) = r(t) * R
θ
JA
θ
JA
R
= 175°C/W
θ
JA
D = 0.05
0.01
P(pk)
T
D = 0.02
t
1
t
D = 0.01
2
– T
= P * R
(t)
J
A
θ
JA
D = 0.005
Duty Cycle, D = t
/t
1
2
D = Single Pulse
0.001
0.00001 0.0001
0.001
0.01
0.1
1
10
100
1,000
10,000
t
1
, PULSE DUR
A
T
ION TIME (s)
Fig. 3 Transient Thermal Response
2 of 6
August 2010
© Diodes Incorporated
DSS30101L
Document number: DS31588 Rev. 3 – 2
DSS30101L
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Min
50
30
5
Typ
⎯
⎯
Max
⎯
⎯
Unit
V
Test Conditions
I
C
= 100
μ
A
I
C
= 10mA
V
V
⎯
⎯
I
E
= 100
μ
A
100
⎯
⎯
⎯
300
300
200
⎯
⎯
⎯
⎯
⎯
⎯
⎯
nA V
CB
= 30V, I
E
= 0
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
I
CBO
I
EBO
50
μ
A V
CB
= 30V, I
E
= 0, T
A
= 150°C
100
⎯
900
nA
V
EB
= 4V, I
C
= 0
V
V
V
CE
= 5V, I
C
= 50mA
CE
= 5V, I
C
= 0.5A
CE
= 5V, I
C
= 1A
DC Current Gain (Note 4)
450
h
FE
⎯
⎯
⎯
⎯
⎯
⎯
0.93
⎯
75
I
C
= 0.1A, I
B
= 1mA
C
= 0.5A, I
B
= 50mA
Collector-Emitter Saturation Voltage (Note 4)
125
200
200
1.1
1.1
mV
V
CE(sat)
I
I
C
= 1.0A, I
B
= 100mA
m
Ω
I
E
= 1A, I
B
= 100mA
Equivalent On-Resistance (Note 4)
Base-Emitter Saturation Voltage (Note 4)
Base-Emitter Turn-on Voltage (Note 4)
R
CE(sat)
V
BE(sat)
V
BE(on)
⎯
⎯
⎯
V
I
C
= 1A, I
B
= 100mA
V
CE
= 2V, I
C
= 1A
0.80
V
V
CE
= 5V, I
C
= 100mA,
Transition Frequency
100
250
MHz
f
T
⎯
f = 100MHz
Output Capacitance
Input Capacitance
Turn-On Time
Delay Time
9
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
pF
pF
ns
ns
ns
ns
ns
ns
C
obo
C
ibo
t
on
t
d
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
CB
= 10V, f = 1MHz
V
EB
= 5V, f = 1MHz
65
57
19
Rise Time
38
t
r
V
CC
= 5V, I
C
= 500mA,
Turn-Off Time
Storage Time
Fall Time
340
315
25
t
off
t
s
I
B1
= -I
B2
= 50mA
t
f
Notes:
4. Measured
under pulsed conditions.
Pulse width = 300
μ
s. Duty
cycle
≤
2%.
1,200
2.2
2.0
1,100
1,000
900
T
A
= 150°C
I
= 5mA
= 4mA
B
1.8
1.6
1.4
1.2
1.0
I
T
A
= 125°C
= 85°C
B
T
A
800
700
600
500
400
300
200
I
= 3mA
= 2mA
B
T
A
= 25°C
I
B
0.8
0.6
0.4
T
A
= -55°C
I
= 1mA
B
0.2
0
100
0
0
1
2
3
4
5
0.001
0.01
I
C
, COLLECTOR CURRENT (A)
Fig. 5 Typical DC Current Gain vs. Collector Current
0.1
1
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
3 of 6
August 2010
© Diodes Incorporated
DSS30101L
Document number: DS31588 Rev. 3 – 2
DSS30101L
0.3
0.2
500
450
400
350
I
/I =
10
B
C
I
/I =
10
B
C
300
250
200
150
100
T
= 125°C
A
T
A
= 150°C
0.1
T
= 85°C
A
T
= 150°C
A
T
= 85°C
T
= 25°C
A
A
T
= 125°C
A
T
= 25°C
T
= -55°C
A
A
50
0
T
= -55°C
A
0
0.001
0.01
0.1
1
10
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Fig. 7 Typical Equivalent On-Resistance
vs. Collector Current
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
1.4
1.2
V
= 5V
CE
I
/I =
10
C
B
1.0
0.8
0.6
1.0
0.8
0.6
0.4
T
T
= -55°C
A
T
= -55°C
= 25°C
A
= 25°C
A
T
A
T
= 85°C
A
0.4
0.2
0
T
= 85°C
A
T
= 125°C
A
T
= 150°C
T
= 125°C
A
A
T
= 150°C
A
0.2
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
150
120
90
f = 1MHz
C
60
ibo
30
0
C
obo
0
5
10
15
20
25
30
35 40
V
R
, REVERSE VOL
T
A
GE (V)
Fig. 10 Typical Capacitance Characteristics
4 of 6
August 2010
© Diodes Incorporated
DSS30101L
Document number: DS31588 Rev. 3 – 2
DSS30101L
Package Outline Dimensions
A
SOT-23
Dim
A
B
C
D
F
G
H
J
K
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
0.37
1.20
2.30
0.89
0.45
1.78
2.80
C
B
2.05
3.00
1.83
2.90
0.05
1.00
H
0.013 0.10
0.903 1.10
M
K
K1
K1
L
M
–
–
0.400
0.55
0.11
–
D
F
J
0.45
0.085 0.18
0° 8°
0.61
L
G
α
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value
(in mm)
Z
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
C
E
X
5 of 6
August 2010
© Diodes Incorporated
DSS30101L
Document number: DS31588 Rev. 3 – 2
DSS30101L
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
6 of 6
August 2010
© Diodes Incorporated
DSS30101L
Document number: DS31588 Rev. 3 – 2
