Diodes-Incorporated-DSS4160U-7
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DSS4160U
LOW V
CE(SAT)
NPN SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
•
•
•
•
•
•
Epitaxial Planar Die Construction
•
•
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity:
Level 1 per J-STD-020D
Terminals: Finish
⎯
Matte Tin annealed over Copper Plated
Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.006 grams (approximate)
Low Collector-Emitter Saturation Voltage, V
CE(SAT)
Complementary PNP Type Available (DSS5160U)
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 1)
“Green Device” (Note 2)
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•
•
•
•
•
C
E
B
Top View
Device Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
80
60
5
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Current – Continuous
Peak Pulse Collector Current
Base Current (DC)
1
A
2
A
I
CM
300
1
mA
A
I
B
Peak Base Current
I
BM
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
@ T
A
= 25
°
C
Symbol
P
D
Value
400
Unit
mW
313
Thermal Resistance, Junction to Ambient (Note 3) @ T
A
= 25
°
C
Operating and Storage Temperature Range
°
C/W
°
C
R
θ
T
J
, T
STG
JA
-55 to +150
Notes:
1. No
purposefully added lead.
2. Diode’s
Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device
mounted on FR-4 PCB with minimum recommended pad layout.
1 of 5
March 2009
© Diodes Incorporated
DSS4160U
Document number: DS31684 Rev. 2 – 2
DSS4160U
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
I
C
= 100
μ
A, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 100
μ
A, I
C
= 0
V
CB
= 60V, I
E
= 0
80
60
5
V
V
V
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
⎯
⎯
⎯
⎯
⎯
⎯
100
50
nA
μ
A
nA
nA
Collector Cutoff Current
I
CBO
⎯
⎯
V
CB
= 60V, I
E
= 0, T
A
= 150°C
CE
= 60V, V
BE
= 0
Collector Cutoff Current
Emitter Cutoff Current
100
100
I
CES
I
EBO
⎯
⎯
⎯
⎯
V
V
EB
= 5V, I
C
= 0
ON CHARACTERISTICS (Note 4)
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 500mA
V
CE
= 5V, I
C
= 1A
⎯
⎯
⎯
⎯
⎯
⎯
250
200
100
DC Current Gain
h
FE
⎯
I
C
= 100mA, I
B
= 1mA
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 50mA
V
CE
= 5V, I
C
= 1A
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
115
150
280
Collector-Emitter Saturation Voltage
mV
V
CE(SAT)
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
280
1.1
0.9
m
Ω
V
V
R
CE(SAT)
V
BE(SAT)
V
BE(ON)
10
pF
MHz
C
obo
f
T
⎯
150
⎯
⎯
V
CB
= 10V, f = 1.0MHz
V
CE
= 10V, I
C
= 50mA, f = 100MHz
⎯
63
33
30
420
380
40
ns
ns
ns
ns
ns
ns
t
on
t
d
t
r
t
off
t
s
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
CC
= 10V
I
C
= 0.5A, I
B1
= I
B2
= 25mA
Fall Time
t
f
Notes:
4. Measured
under pulsed conditions. Pulse width = 300
μ
s. Duty
cycle
≤
2%.
600
10
1
Pw = 1ms
Pw = 10ms
500
400
300
200
0.1
Pw = 100ms
DC
0.01
R =
313°C/W
θ
JA
100
0
0.001
0.1
1
10
100
0
25
50
150
75
100
125
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient
T
emperature (Note 3)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
2 of 5
March 2009
© Diodes Incorporated
DSS4160U
Document number: DS31684 Rev. 2 – 2
DSS4160U
1,000
800
1
V
= 5V
CE
I
/I =
10
B
T
= 150°C
C
A
0.1
600
400
T
= 150°C
A
T
= 85°C
A
T
T
= 85°C
A
T
= 25°C
A
= 25°C
A
T
= -55°C
0.01
A
T
= -55°C
200
0
A
0.001
1
10
100
1,000
10,000
0.1
1
10
100
1,000 10,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
I
C
, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
1.0
1.2
1.0
V
= 5V
I
/I =
10
B
CE
C
0.8
0.6
0.4
0.8
0.6
T
= -55°C
T
= -55°C
A
A
A
T
T
= 25°C
= 85°C
T
= 25°C
= 85°C
A
0.4
T
A
A
0.2
0
0.2
0
T
= 150°C
A
T
= 150°C
A
0.1
1
10
100
1,000 10,000
0.1
1
10
100
1,000 10,000
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
180
150
f = 1MHz
120
90
C
ibo
60
30
0
C
obo
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
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March 2009
© Diodes Incorporated
DSS4160U
Document number: DS31684 Rev. 2 – 2
DSS4160U
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
R
(t) = r(t) * R
θ
JA
D = 0.9
θ
JA
R
= 310°C/W
θ
JA
D = 0.02
D = 0.01
D = 0.005
P(pk)
T
0.01
t
1
t
2
– T
= P * R
(t)
J
A
θ
JA
Duty Cycle, D = t
/t
1
2
D = Single Pulse
0.001
0.00001 0.0001
0.001
0.01
0.1
1
10
100
1,000
10,000
t
1
, PULSE DUR
A
T
ION TIME (s)
Fig. 8 Transient Thermal Response (Note 3)
Ordering Information
(Note 5)
Part Number
Case
Packaging
DSS4160U-7
SOT-323
3000/Tape & Reel
Notes:
Marking Information
ZN9 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
ZN9
M = Month (ex: 9 = September)
Date Code Key
Year
2008
2009
2010
2011
2012
2013
2014
2015
Code
V
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Package Outline Dimensions
A
SOT-323
Dim
A
B
C
D
G
H
J
K
L
Min
Max
0.40
1.35
2.20
–
1.40
2.20
0.10
1.00
0.40
0.18
8°
Typ
0.30
1.30
2.10
0.65
1.30
2.15
0.05
1.00
0.30
0.11
–
0.25
1.15
2.00
–
1.20
1.80
0.0
0.90
0.25
0.10
0°
C
B
G
H
K
M
M
α
J
L
D
All Dimensions in mm
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March 2009
© Diodes Incorporated
DSS4160U
Document number: DS31684 Rev. 2 – 2
DSS4160U
Suggested Pad Layout
Y
Dimensions Value
(in mm)
Z
X
Y
C
E
2.8
0.7
0.9
1.9
1.0
Z
C
E
X
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
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March 2009
© Diodes Incorporated
DSS4160U
Document number: DS31684 Rev. 2 – 2
