Diodes-Incorporated-DSS8110Y-7
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DSS8110Y
100V NPN LOW SATURATION TRANSISTOR IN SOT363
Features
Mechanical Data
BV
CEO
> 100V
C
= 1A high Continuous Collector Current
Case: SOT363
I
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity:
Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads. Solderable per
I
CM
= 3A Peak Pulse Current
R
CE(sat)
= 200m
Ω
for a Low Equivalent On-Resistance
Low Saturation Voltage V
CE(sat)
< 200mV @ 1A
Complementary PNP Type Available (DSS9110Y)
e3
MIL-STD-202, Method 208
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Weight: 0.006 grams (approximate)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
C
E
SOT-363
C
C
C
C
E
B
B
Top View
Device Symbol
Pin-Out Top
Ordering Information
(Note 4)
Product
DSS8110Y-7
Marking
ZN5
Reel size (inches)
Tape width (mm)
Quantity per reel
7
8
3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
ee http://www.diodes.com/quality/lead_free.html for
more information about Diodes Incorporated’s definitions of Halogen and Antimony free, “Green”
and Lead-Free.
3. Halogen and Antimony free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
ZN5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
ZN5
M = Month (ex: 9 = September)
Date Code Key
Year
2010
2011
2012
2013
2014
2015
2016
2017
2018
2019
2020
2021
Code
X
Y
Z
A
B
C
D
E
F
G
H
I
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DSS8110Y
Document number: DS31679 Rev. 3 – 2
DSS8110Y
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
120
100
5
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Current – Continuous
Peak Pulse Collector Current
Base Current – Continuous
1
A
3
A
I
CM
0.3
A
I
B
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
R
Value
625
Unit
mW
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Lead (Note 6)
Operating and Storage Temperature Range
200
°C/W
JA
81
°C/W
°C
R
JL
-55 to +150
T
J
, T
STG
ESD Ratings
(Note 7)
Characteristic
Electrostatic Discharge – Human Body Model
Electrostatic Discharge – Machine Model
Symbol
Value
Unit
V
JEDEC Class
ESD HBM
ESD MM
4,000
400
3A
C
V
Notes:
5. For a device mounted on minimum recommended pad layout that is on a single-sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
6. Thermal resistance from junction to solder-point (at the end of collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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© Diodes Incorporated
DSS8110Y
Document number: DS31679 Rev. 3 – 2
DSS8110Y
Thermal Characteristics and Derating Information
0.7
0.6
10
Pw = 100µs
1
0.5
0.4
DC
Pw = 100ms
Pw = 10ms
Pw = 1ms
0.1
0.3
0.2
0.01
R
= 200°C/W
JA
0.1
0
0.001
0
50
100
150
200
0.1
1
10
100
1,000
T
A
, AMBIENT TEMPERATURE (
C)
V
CE
, COLLECTOR-EMITTER VOL
T
A
GE (V)
Fig. 1 Power Dissipation vs. Ambient
T
emperature
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
1
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
R
(t) = r(t) * R
JA
D = 0.05
D = 0.02
JA
R
= 180°C/W
JA
P(pk)
T
t
1
0.01
D = 0.01
t
2
– T
= P * R
(t)
J
A
JA
D = 0.005
Duty Cycle, D = t
/t
1
2
D = Single Pulse
0.001
0.00001 0.0001
0.001
0.01
0.1
1
10
100
1,000
t
1
, PULSE DUR
A
T
ION TIME (s)
Fig. 3 Transient Thermal Response
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© Diodes Incorporated
DSS8110Y
Document number: DS31679 Rev. 3 – 2
DSS8110Y
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
I
C
= 100µA, I
E
= 0
120
100
5
V
V
V
BV
CBO
BV
CEO
BV
EBO
100
50
I
C
= 10mA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CB
= 80V, I
E
= 0
nA
µA
Collector Cutoff Current
I
CBO
V
CB
= 80V, I
E
= 0, T
A
= 150°C
Collector Cutoff Current
100
100
nA
nA
I
CES
I
EBO
V
CE
= 80V, V
BE
= 0
V
EB
= 4V, I
C
= 0
Emitter Cutoff Current
ON CHARACTERISTICS (Note 8)
V
CE
= 10V, I
C
= 1mA
500
150
150
100
80
V
CE
= 10V, I
C
= 250mA
V
CE
= 10V, I
C
= 500mA
CE
= 10V, I
C
= 1A
DC Current Gain
V
h
FE
V
I
C
= 100mA, I
B
= 10mA
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 100mA
V
CE
= 10V, I
C
= 1A
40
120
200
Collector-Emitter Saturation Voltage
mV
V
CE(sat)
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
200
1.05
0.9
m
ꢀ
V
R
CE(sat)
V
BE(sat)
V
BE(on)
V
7.5
pF
C
obo
f
T
100
V
CB
= 10V, f = 1.0MHz
Current Gain-Bandwidth Product
MHz
V
CE
= 10V, I
C
= 50mA, f = 100MHz
Notes:
8. Measured under pulsed conditions.
Pulse width
300µs. Duty
cycle
2%.
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DSS8110Y
Document number: DS31679 Rev. 3 – 2
DSS8110Y
1.2
1.0
500
400
I
= 5mA
B
T
= 150°C
A
T
T
= 125°C
= 85°C
0.8
0.6
A
I
= 4mA
= 3mA
B
300
200
A
I
B
T
= 25°C
A
I
= 2mA
= 1mA
B
0.4
T
= -55°C
A
100
0
I
0.2
0
B
0.001
0.01
I
C
, COLLECTOR CURRENT (A)
Fig. 5 Typical DC Current Gain vs. Collector Current
0.1
1
10
0
2
4
6
8
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
1.2
1.0
1
V
= 10V
CE
I
/I =
10
B
C
0.8
0.6
0.4
T
= -55°C
A
0.1
T
= 25°C
A
T
= 150°C
A
T
= 85°C
A
T =
85°C
A
T
= 125°C
A
T
= 25°C
T
= 125°C
A
A
0.2
0
T
= 150°C
T
= -55°C
A
A
0.01
0.0001 0.001
0.01
0.1
1
10
0.0001 0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
Fig. 7 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1.2
1.0
I
/I =
10
B
C
0.8
T
= -55°C
= 25°C
A
0.6
0.4
T
A
T
= 85°C
A
T
= 125°C
A
T
= 150°C
A
0.2
0
0.1
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
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© Diodes Incorporated
DSS8110Y
Document number: DS31679 Rev. 3 – 2
DSS8110Y
Package Outline Dimensions
A
SOT363
Dim Min
Max Typ
A
B
C
D
F
0.10 0.30
0.25
1.15 1.35
1.30
2.00 2.20
2.10
0.65 Typ
0.40 0.45 0.425
1.80 2.20
2.15
B C
H
J
H
0
0.10 0.05
K
L
M
0.90 1.00
1.00
0.25 0.40
0.30
0.10 0.22
0.11
K
J
M
L
0°
8°
–
D
F
All Dimensions in mm
Suggested Pad Layout
C2
C2
Dimensions Value
(in mm)
Z
G
2.5
1.3
X
Y
0.42
0.6
C1
G
Y
Z
C1
C2
1.9
0.65
X
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© Diodes Incorporated
DSS8110Y
Document number: DS31679 Rev. 3 – 2
DSS8110Y
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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© Diodes Incorporated
DSS8110Y
Document number: DS31679 Rev. 3 – 2
