Diodes-Incorporated-DSS9110Y-7
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DSS9110Y
100V LOW V
CE(SAT)
PNP SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
•
•
•
•
•
•
•
Epitaxial Planar Die Construction
•
•
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity:
Level 1 per J-STD-020
Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Ideal for Low Power Amplification and Switching
Complementary NPN Type Available (DSS8110Y)
Ultra Small Surface Mount Package
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free “Green” Device (Note 2)
ESD rating: 400V-MM, 8KV-HBM
•
•
•
Weight: 0.006 grams (approximate)
C
C
E
C
B
C
C
B
E
Top View
Top View
Device Symbol
Pin Out Configuration
Ordering Information
(Note 3)
Product
DSS9110Y-7
Marking
ZP5
Reel size (inches)
Tape width (mm)
Quantity per reel
7
8mm
3,000
Notes:
1. No purposefully added lead.
Marking Information
ZP5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
ZP5
M = Month (ex: 9 = September)
Date Code Key
Year
2010
2011
2012
2013
2014
2015
2016
2017
Code
X
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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October 2010
© Diodes Incorporated
DSS9110Y
Document number: DS31678 Rev. 2 – 2
DSS9110Y
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-120
-100
-5
Unit
V
Collector-Emitter Voltage
V
Emitter-Base Voltage
V
Collector Current – Continuous
Peak Pulse Collector Current
Base Current – Continuous
-1
A
-3
A
I
CM
-0.3
A
I
B
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
@ T
A
= 25
°
C
Thermal Resistance, Junction to Ambient (Note 4) @ T
A
= 25
°
C
Operating and Storage Temperature Range
Symbol
Value
625
Unit
mW
°
C/W
°
C
P
D
200
R
θ
JA
-55 to +150
T
J
, T
STG
Notes:
4. Device
mounted on FR-4 PCB, with minimum recommended pad layout.
0.8
10
1
Pw = 100µs
0.6
0.4
0.1
0.01
R
= 200
°
C/W
0.2
0
θ
JA
0.001
0.1
0
50
100
150
200
1
10
100
1,000
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Power Dissipation vs. Ambient
T
e
mperature
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Fig. 2
Safe Operating Area
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
R
(t) = r(t) * R
θ
JA
θ
JA
R
= 163°C/W
θ
JA
0.01
D = 0.01
P(pk)
T
t
1
D = 0.005
t
2
– T
= P * R
(t)
J
A
θ
JA
Duty Cycle, D = t
/t
1
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t
1
, PULSE DUR
A
T
ION TIME (s)
Fig. 3 Transient Thermal Response
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October 2010
© Diodes Incorporated
DSS9110Y
Document number: DS31678 Rev. 2 – 2
DSS9110Y
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
Min
-120
-100
-5
Typ
⎯
⎯
Max
⎯
⎯
⎯
-100
-50
Unit
V
Test Condition
I
C
= -100
μ
A, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -100
μ
A, I
C
= 0
V
CB
= -80V, I
E
= 0
V
V
⎯
nA
μ
A
nA
nA
Collector Cutoff Current
I
CBO
⎯
⎯
V
CB
= -80V, I
E
= 0, T
A
= 150°C
V
CE
= -80V, V
BE
= 0
Collector Cutoff Current
Emitter Cutoff Current
-100
-100
I
CES
I
EBO
⎯
⎯
⎯
⎯
V
EB
= -4V, I
C
= 0
V
CE
= -5V, I
C
= -1mA
V
CE
= -5V, I
C
= -250mA
⎯
⎯
⎯
⎯
⎯
⎯
450
⎯
150
150
150
125
DC Current Gain (Note 5)
V
h
FE
V
CE
= -5V, I
C
= -500mA
V
CE
= -5V, I
C
= -1A
I
C
= -250mA, I
B
= -25mA
I
C
= -500mA, I
B
= -50mA
I
C
= -1A, I
B
= -100mA
⎯
⎯
⎯
⎯
⎯
⎯
-120
-180
-320
Collector-Emitter Saturation Voltage (Note 5)
mV
V
CE(sat)
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
Output Capacitance
320
-1.1
-1
m
Ω
V
R
CE(sat)
⎯
⎯
⎯
⎯
100
⎯
⎯
⎯
I
C
= -1A, I
B
= -100mA
V
BE(sat)
I
C
= -1A, I
B
= -100mA
V
V
BE(on)
V
CE
= -5V, I
C
= -1A
16
pF
MHz
ns
C
obo
f
T
⎯
⎯
⎯
V
CB
= -10V, f = 1.0MHz
V
CE
= -10V, I
C
= -50mA, f = 100MHz
Current Gain-Bandwidth Product
Delay Time
⎯
27
t
d
⎯
Rise Time
230
165
160
ns
t
r
⎯
⎯
⎯
⎯
⎯
⎯
V
CC
= -10V, I
C
= -1A,
Storage Time
ns
I
B1
= -I
B2
= -50mA
t
s
Fall Time
ns
t
f
Notes:
5. Measured under pulsed conditions. Pulse width = 300
μ
s. Duty
cycle
≤
2%.
2.4
1,000
900
V
= -10V
CE
2.0
1.6
I
= 45mA
B
800
700
600
500
I
= 40.5mA
B
T
= 150°C
A
I
= 36mA
B
I
= 31.5mA
T
= 125°C
B
A
A
I
= 9mA
B
T
= 85°C
1.2
0.8
400
300
200
I
= 4.5mA
B
T
= 25°C
A
A
I
= 27mA
B
I
= 22.5mA
B
I
= 18mA
B
T
= -55°C
0.4
0
I
= 13.5mA
B
100
0
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
100
1,000
10,000
0
1
2
3
4
5
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage
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October 2010
© Diodes Incorporated
DSS9110Y
Document number: DS31678 Rev. 2 – 2
DSS9110Y
1
1
I
/I =
10
B
C
I /I
= 20
C B
T
= 150°C
A
0.1
0.1
T
= 125°C
A
T
= 150°C
A
T
= 85°C
A
T
= 125°C
A
T
= 85°C
T
= 25°C
A
A
T
= -55°C
A
T
= 25°C
A
T
= -55°C
A
0.01
0.0001 0.001
0.01
0.01
0.1
1
10
0.0001 0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
10
10
1
I
/I =
50
B
C
1
T
= 150°C
A
T
= 125°C
A
T
= 85°C
A
0.1
0.1
T
= 25°C
A
I
/I =
50
B
T
= -55°C
C
I
A
/I =
20
C
B
I
/I =
10
B
C
0.01
0.01
0.0001 0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Fig. 9 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
Fig. 8 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
1.0
1.4
1.2
V
= -5V
CE
I
/I =
10
B
C
1.0
0.8
0.8
0.6
T
= -55°C
= 25°C
A
T
T
= -55°C
A
0.6
0.4
T
A
= 25°C
A
0.4
0.2
0
T
= 85°C
T
= 85°C
A
A
T
= 125°C
T
= 125°C
A
A
0.2
0
T
= 150°C
A
T
= 150°C
A
0.0001 0.001
0.01
0.1
1
10
0.0001 0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 11 Typical Base-Emitter Saturation Voltage
vs. Collector Current
I
C
, COLLECTOR CURRENT (A)
Fig. 10 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
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October 2010
© Diodes Incorporated
DSS9110Y
Document number: DS31678 Rev. 2 – 2
DSS9110Y
Package Outline Dimensions
A
SOT-363
Min
0.10
1.15
2.00
Dim
A
B
C
D
F
H
J
K
L
Max
0.30
1.35
2.20
B
C
0.65 Typ
0.40
1.80
0
0.90
0.25
0.10
0°
0.45
2.20
0.10
1.00
0.40
0.22
8°
H
K
M
M
α
J
L
D
F
All Dimensions in mm
Suggested Pad Layout
C2
C2
Dimensions Value
(in mm)
Z
G
2.5
1.3
X
Y
0.42
0.6
C1
G
Z
C1
C2
1.9
0.65
Y
X
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October 2010
© Diodes Incorporated
DSS9110Y
Document number: DS31678 Rev. 2 – 2
DSS9110Y
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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October 2010
© Diodes Incorporated
DSS9110Y
Document number: DS31678 Rev. 2 – 2
