Diodes-Incorporated-DST3904DJ-7
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DST3904DJ
40V DUAL NPN SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
•
•
•
•
•
•
•
V
CEO
= 40V
I
C
= 200mA
•
•
Case: SOT-963
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity:
Level 1 per J-STD-020
Terminals: Finish
⎯
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
“Green” Device (Note 2)
•
•
•
Weight: 0.0027 grams (approximate)
Ultra Small Package
SOT-963
Top View
Device Schematic
Ordering Information
Device
Packaging
Shipping
DST3904DJ-7
SOT-963
10,000/Tape & Reel
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
Marking Information
T8 = Product Type Marking Code
T8
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April 2010
© Diodes Incorporated
DST3904DJ
Document number: DS32038 Rev. 2 – 2
DST3904DJ
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
60
Unit
V
Collector-Emitter Voltage
40
V
Emitter-Base Voltage
6.0
V
Collector Current – Continuous (Note 3)
200
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Symbol
P
D
Value
300
Unit
mW
°C/W
°C
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
417
R
θ
JA
-55 to +150
T
J
, T
STG
Notes:
3. Device
mounted on FR-4 PCB with minimum recommended pad layout.
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
R
(t) = r(t) * R
θ
JA
D = 0.9
θ
JA
D = 0.05
R
= 370°C/W
θ
JA
P(pk)
T
D = 0.02
t
1
0.01
t
2
D = 0.01
– T
= P * R
(t)
J
A
θ
JA
Duty Cycle, D = t
/t
1
2
D = 0.005
D = Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t
1
, PULSE DUR
A
T
ION TIME (s)
Fig. 1 Transient Thermal Response
0.4
1,000
100
Single Pulse
(t) = r(t) * R
R
θ
JA
θ
JA
0.3
R
= 370°C/W
θ
JA
T
– T
= P * R
(t)
A
θ
JA
J
Duty Cycle, D = t
/t
1
Note 3
2
10
0.2
1
0.1
0
0.1
0.00001
0.001
0.1
10
1,000
0
20
T
A
, AMBIENT TEMPERATURE (
Fig. 3 Power Dissipation vs. Ambient
T
emperature
40
60
80 100 120 140 160
t
1
, PULSE DUR
A
T
ION TIME (s)
°
C)
Fig. 2 Single Pulse Maximum Power Dissipation
2 of 6
April 2010
© Diodes Incorporated
DST3904DJ
Document number: DS32038 Rev. 2 – 2
DST3904DJ
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
Min
Max
Unit
Test Condition
C
= 10
μ
A, I
E
= 0
60
40
6.0
⎯
V
V
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
⎯
⎯
⎯
50
50
I
I
I
C
= 1.0mA, I
B
= 0
V
E
= 10
μ
A, I
C
= 0
V
CE
= 30V, V
EB(OFF)
= 3.0V
V
CE
= 30V, V
EB(OFF)
= 3.0V
nA
nA
Base Cutoff Current
I
BL
⎯
ON CHARACTERISTICS
(Note 4)
I
C
= 100µA,
V
CE
= 1.0V
⎯
⎯
40
70
100
60
I
C
= 1.0mA,
V
CE
= 1.0V
I
C
= 10mA,
V
CE
= 1.0V
I
C
50mA, V
CE
= 1.0V
DC Current Gain
300
h
FE
⎯
⎯
⎯
=
30
I
C
= 100mA, V
CE
= 1.0V
I
C
= 10mA, I
B
= 1.0mA
0.20
0.30
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
V
V
CE(SAT)
V
BE(SAT)
⎯
I
C
= 50mA, I
B
= 5.0mA
0.65
⎯
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
0.85
0.95
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
4.0
8.5
10
pF
pF
C
obo
C
ibo
h
ie
⎯
⎯
1.0
0.5
100
1.0
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Capacitance
Input Impedance
k
Ω
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
8.0
400
40
x 10
-4
⎯
h
re
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
h
fe
h
oe
μ
S
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
Current Gain-Bandwidth Product
300
MHz
f
T
⎯
SWITCHING CHARACTERISTICS
Delay Time
35
35
ns
ns
ns
ns
t
d
t
r
⎯
⎯
⎯
⎯
V
V
CC
= 3.0V, I
C
= 10mA,
BE(off)
= – 0.5V, I
B1
= 1.0mA
Rise Time
Storage Time
200
50
t
s
t
f
V
CC
= 3.0V, I
C
= 10mA,
Fall Time
I
B1
= I
B2
= 1.0mA
Notes:
4. Measured
under pulsed conditions. Pulse width = 300µs. Duty cycle
≤
2%
0.14
400
I
= 2mA
B
I
= 1.8mA
V
= 5V
CE
B
0.12
0.10
0.08
0.06
I
= 1.6mA
T
T
= 150°C
B
A
I
= 1.4mA
B
I
= 1.2mA
B
300
200
= 125°C
= 85°C
A
I
= 1mA
B
T
A
I
= 0.8mA
= 0.6mA
B
I
T
= 25°C
B
A
I
= 0.4mA
= 0.2mA
B
0.04
0.02
0
T
= -55°C
100
0
A
I
B
0
1
2
3
4
5
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
100
1,000
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
3 of 6
April 2010
© Diodes Incorporated
DST3904DJ
Document number: DS32038 Rev. 2 – 2
DST3904DJ
1
1
I
/I =
20
B
I
/I =
10
B
C
C
T
= 150°C
A
T
= 125°C
A
T
= 150°C
0.1
0.1
A
T
= 85°C
A
T
= 125°C
A
T
= 25°C
A
T
= 85°C
A
T
= -55°C
A
T
= 25°C
A
T
= -55°C
A
0.01
0.01
0.1
1
10
100
1,000
0.1
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
1.0
1.1
1.0
Gain = 10
V
= 5V
CE
0.9
0.8
0.7
0.6
T
= -55°C
= 25°C
A
0.8
0.6
T
T
= -55°C
= 25°C
A
T
A
A
T
= 150°C
A
T
= 150°C
A
0.5
T
= 125°C
A
0.4
0.2
T
= 125°C
A
T
= 85°C
A
0.4
0.3
T
= 85°C
A
0.1
1
10
100
1,000
0.1
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
10
1
T
= 25°C Single,
A
Non-Repetitive Pulse
P
= 1ms
W
DC
= 100ms
P
= 100µs
W
P
0.1
W
P
= 10ms
W
0.01
0.001
0.1
1
10
100
V
CE
, COLLECTOR EMITTER CURRENT (V)
Fig. 10 Safe Operation Area (NPN)
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April 2010
© Diodes Incorporated
DST3904DJ
Document number: DS32038 Rev. 2 – 2
DST3904DJ
Package Outline Dimensions
D
e1
SOT-963
Dim Min
Max Typ
0.50 0.45
0.05
L
A
A1
C
0.40
0
–
E
E1
0.120 0.180
0.150
D
E
E1
L
b
0.95
0.95
0.75
0.05
0.10
1.05 1.00
1.05 1.00
0.85 0.80
0.15 0.10
0.20 0.15
e
c
b (6 places)
e
e1
0.35 Typ
0.70 Typ
All Dimensions in mm
A
A1
Suggest Pad Layout
C
C
Dimensions Value
(in mm)
C
X
Y
0.350
0.200
0.200
1.100
Y1
Y1
Y (6X)
X (6X)
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April 2010
© Diodes Incorporated
DST3904DJ
Document number: DS32038 Rev. 2 – 2
DST3904DJ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause
the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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April 2010
© Diodes Incorporated
DST3904DJ
Document number: DS32038 Rev. 2 – 2
