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DST847BPDP6
45V COMPLEMENTARY SMALL SIGNAL TRANSISTOR IN SOT963
Features
Mechanical Data
NPN & PNP Complementary SS
Case: SOT-963
BV
CEO
> 45V
Case Material: Molded Plastic, “Green” Molding Compound
;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity:
Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.0027 grams (Approximate)
I
C
= 100mA High Collector Current
P
D
= 300mW Power Dissipation
1mm
2
Package Footprint, 5 times smaller than SOT23
0.5mm Height Package Minimizing Off-Board Profile
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
SOT-963
4
6
5
2
Q2
3
Q1
1
Top View
Device Schematic
Ordering Information
(Note 4)
Device
Compliance
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
DST847BPDP6-7
AEC-Q101
TC
7
8
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html
for more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
SOT-963
TC
TC = Product Type Marking Code
1 of 9
March 2015
© Diodes Incorporated
DST847BPDP6
Document number: DS32036 Rev. 2 – 2
DST847BPDP6
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
50(-50)
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
45(-45)
V
6.0(-5.0)
100 (-100)
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Symbol
P
D
Value
300
Unit
mW
°C/W
°C
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
417
R
JA
-55 to +150
T
J
, T
STG
ESD Ratings
(Note 6)
Characteristic
Symbol
Value
Unit
JEDEC Class
3A
Electrostatic Discharge – Human Body Model
ESD HBM
4,000
V
B
Electrostatic Discharge – Machine Model
ESD MM
200
V
Notes:
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in steady state condition.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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March 2015
© Diodes Incorporated
DST847BPDP6
Document number: DS32036 Rev. 2 – 2
DST847BPDP6
Thermal Characteristics and Derating Information
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
(t) = r(t) * R
JA
JA
= 370°C/W
R
JA
D = 0.02
P(pk)
T
0.01
t
D = 0.01
1
t
2
D = 0.005
– T
= P * R
(t)
J
A
JA
Duty Cycle, D = t
/t
1
2
D = Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t
1
, PULSE DUR
A
T
ION TIME (s)
Fig. 1 Transient Thermal Response
0.4
1,000
100
Single Pulse
R
(t) = r(t) * R
JA
JA
0.3
R
= 370°C/W
JA
Note 3
T
– T
= P * R
(t)
J
A
JA
Duty Cycle, D = t
/t
1
2
10
1
0.2
0.1
0
0.1
0.01
0.00001
0.001
0.1
10
1,000
0
20
T
A
, AMBIENT TEMPERATURE (
C)
Fig. 3 Power Dissipation vs. Ambient
T
emperature
40
60
80 100 120 140 160
t
1
, PULSE DURATION TIME (s)
Fig. 2 Single Pulse Maximum Power Dissipation
3 of 9
March 2015
© Diodes Incorporated
DST847BPDP6
Document number: DS32036 Rev. 2 – 2
DST847BPDP6
Electrical Characteristics
–
Q1 NPN Transistor
(@T
A
= +25°C, unless otherwise specified.)
Characteristic (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Symbol
BV
CBO
BV
CES
BV
CEO
BV
EBO
Min
50
Typical
150
Max
Unit
V
Test Condition
–
–
–
I
C
= 10µA, I
B
= 0
50
V
I
C
= 10µA, I
B
= 0
I
C
= 1mA, I
B
= 0
I
E
= 1µA, I
C
= 0
150
65
45
V
Emitter-Base Breakdown Voltage
Collector-Base Cut-Off Current
6
–
–
V
8.35
–
15
nA
I
CBO
V
CB
= 30V
–
–
I
C
= 10µA,
V
CE
= 5V
I
C
= 2.0mA,
V
CE
= 5V
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
I
C
= 2.0mA,
V
CE
= 5V
I
C
= 10mA,
V
CE
= 5V
220
300
DC Current Gain
–
h
FE
200
470
–
–
125
300
50
122
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
mV
mV
mV
V
CE(sat)
V
BE(sat)
V
BE(on)
–
–
1,000
1,100
760
880
650
725
580
750
800
V
CE
= 5V, I
C
= 10mA,
f = 100MHz
Current Gain-Bandwidth Product
Collector-Base Capacitance
100
175
1.5
–
–
MHz
pF
f
T
–
C
cbo
V
CB
= 10V, f = 1.0MHz
Note:
7. Measured under pulsed conditions. Pulse width
300µs. Duty
cycle
2%.
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March 2015
© Diodes Incorporated
DST847BPDP6
Document number: DS32036 Rev. 2 – 2
DST847BPDP6
Typical Characteristics
–
Q1 NPN Transistor
(@T
A
= +25°C, unless otherwise specified.)
0.16
450
400
350
I
= 2mA
B
I
= 1.8mA
V
= 5V
B
CE
I
= 1.6mA
B
0.14
I
= 1.4mA
B
T
= 150°C
= 100°C
A
I
= 1.2mA
B
0.12
0.10
0.08
0.06
T
A
I
= 1mA
300
250
B
I
I
= 0.8mA
B
T
= 25°C
= 0.6mA
= 0.4mA
A
B
200
150
100
I
B
T
= -55°C
A
I
= 0.2mA
0.04
0.02
0
B
50
0
0
1
2
3
4
5
1
10
100
I
C
, COLLECTOR CURRENT (mA)
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 5 Typical DC Current Gain vs. Collector Current
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
0.20
0.18
0.16
0.14
I
/I =
10
B
C
I
/I =
20
B
1
C
0.12
0.10
0.08
T
= 10°C
= 20°C
A
0.1
T
= 150°C
A
T
A
T
= 100°C
A
0.06
0.04
T
= 50°C
A
T =
100°C
A
T
= 25°C
A
T
= -55°C
0.02
0
A
0.01
1
10
100
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.1
1.0
1.0
0.8
0.6
V
= 5V
CE
0.9
0.8
0.7
T
= -55°C
A
T
= -55°C
= 25°C
A
T
= 25°C
A
T
A
0.6
0.5
T
= 100°C
A
0.4
0.2
T
= 100°C
A
T
= 150°C
A
T
= 150°C
A
0.4
0.3
0.1
1
10
100
1
10
I
C
, COLLECTOR CURRENT (mA)
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
5 of 9
March 2015
© Diodes Incorporated
DST847BPDP6
Document number: DS32036 Rev. 2 – 2
DST847BPDP6
Electrical Characteristics
–
Q2 PNP Transistor
(@T
A
= +25°C, unless otherwise specified.)
Characteristic (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CBO
Min
-50
-50
-45
-6
Typical
-100
-90
Max
Unit
V
Test Condition
–
–
–
–
I
C
= -10µA, I
B
= 0
V
I
C
= -10µA, I
B
= 0
I
C
= -1mA, I
B
= 0
I
E
= -1µA, I
C
= 0
-65
V
-8.5
–
V
Collector Cut-Off Current
–
-15
nA
V
CB
= -30V
–
–
I
C
= -10µA,
V
CE
= -5V
I
C
= -2.0mA,
V
CE
= -5V
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
I
C
= -2.0mA,
V
CE
= -5V
I
C
= -10mA,
V
CE
= -5V
340
330
DC Current Gain
–
h
FE
200
470
–
–
-175
-500
-70
-300
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
mV
mV
mV
V
CE(sat)
V
BE(sat)
V
BE(on)
–
–
-1,000
-1,100
-760
-885
-670
-715
-600
–
-780
-850
V
CE
= -5V, I
C
= -10mA,
f = 100MHz
Current Gain-Bandwidth Product
Output Capacitance
100
–
–
MHz
pF
f
T
340
2.0
–
C
obo
V
CB
= -10V, f = 1.0MHz
Note:
7. Measured under pulsed conditions. Pulse width
300µs. Duty
cycle
2%.
6 of 9
March 2015
© Diodes Incorporated
DST847BPDP6
Document number: DS32036 Rev. 2 – 2
DST847BPDP6
Typical Characteristics
–
Q2 PNP Transistor
(@T
A
= +25°C, unless otherwise specified.)
0.18
1,000
100
10
V
= 5V
I
= -2mA
CE
B
T
= 150°C
T
= 125°C
I
= -1.8mA
A
A
B
0.16
I
= -1.6mA
B
T
= 85°C
= 25°C
A
A
0.14
0.12
I
= -1.4mA
B
T
I
= -1.2mA
B
I
= -1mA
B
T
= -55°C
A
I
I
= -0.8mA
B
B
0.10
0.08
= -0.6mA
= -0.4mA
I
I
B
B
0.06
0.04
= -0.2mA
0.02
0
0.1
1
10
100
1,000
0
1
2
3
4
5
-V
CE
, COLLECTOR-EMITTER VOL
T
A
GE (V)
-I
C
, COLLECTOR CURRENT (A)
Fig. 11 Typical DC Current Gain vs. Collector Current
Fig. 10 Typical Collector Current
vs. Collector-Emitter Voltage
1
1
I
/I =
20
B
C
I
/I =
10
B
C
T
= 150°C
A
0.1
0.1
T
= 85°C
T
= 125°C
A
A
T
= 150°C
A
T
= 25°C
A
T
= 125°C
A
T =
85°C
A
T
= -55°C
T
= 25°C
A
A
T
= -55°C
A
0.01
0.01
0.1
1
10
100
1,000
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
-I
C
, COLLECTOR CURRENT (mA)
Fig. 13 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
Fig. 12 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
1.0
1.2
1.0
V
= -5V
CE
I
/I =
10
B
C
0.8
T
= -55°C
= 25°C
A
0.8
0.6
T
= -55°C
= 25°C
A
0.6
0.4
T
A
T
A
T =
85°C
A
T
= 85°C
A
T
= 125°C
A
T
= 125°C
A
T
= 150°C
A
0.4
0.2
T
= 150°C
0.2
0
A
0.1
1
10
100
1,000
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
-I
C
, COLLECTOR CURRENT (mA)
Fig. 14 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
Fig. 15 Typical Base-Emitter Saturation Voltage
vs. Collector Current
7 of 9
March 2015
© Diodes Incorporated
DST847BPDP6
Document number: DS32036 Rev. 2 – 2
DST847BPDP6
Package Outline Dimensions
D
e1
SOT-963
Dim Min
Max Typ
0.50 0.45
0.05
L
A
A1
C
0.40
0
–
E
E1
0.120 0.180
0.150
D
E
E1
L
b
0.95
0.95
0.75
0.05
0.10
1.05 1.00
1.05 1.00
0.85 0.80
0.15 0.10
0.20 0.15
e
c
b (6 places)
e
e1
0.35 Typ
0.70 Typ
A
All Dimensions in mm
A1
Suggest Pad Layout
C
C
Dimensions Value
(in mm)
C
X
Y
0.350
0.200
0.200
1.100
Y1
Y1
Y (6X)
X
(
6X)
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March 2015
© Diodes Incorporated
DST847BPDP6
Document number: DS32036 Rev. 2 – 2
DST847BPDP6
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
9 of 9
March 2015
© Diodes Incorporated
DST847BPDP6
Document number: DS32036 Rev. 2 – 2
