Diodes-Incorporated-DXT696BK-13
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DXT696BK
180V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN TO252
Features
Mechanical Data
Case: TO252 (DPAK)
BV
CEO
> 180V
C
= 0.5A high Continuous Collector Current
Case Material:
Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads; Solderable
per MIL-STD-202, Method 208
I
I
CM
= 1A Peak Pulse Current
High gain device > 500 at I
C
=100mA
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Weight: 0.34 grams (approximate)
Applications
Voltage Regulator Transistors
Startup Switches
Darlington Replacement
DC Fans
Relays and Solenoid Driving
C
C
C
TO252 (DPAK)
B
E
B
E
Top View
Top View
Pin-Out
Equivalent Circuit
Ordering Information
(Note 4)
Product
DXT696BK-13
Package
TO252 (DPAK)
Marking
DXT696B
Reel size (inches)
Tape width (mm)
16
Quantity per reel
13
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
ee http://www.diodes.com/quality/lead_free.html for
more information about Diodes Incorporated’s definitions of Halogen and Antimony free,”Green”
and Lead-Free.
3. Halogen and Antimony free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
= Manufacturers’ code marking
DXT 696B = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year, (ex: 13 = 2013)
WW = Week Code 01 – 52
DXT696B
YYWW
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December 2013
© Diodes Incorporated
DXT696BK
Document number: DS36574 Rev. 1 – 2
DXT696BK
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
180
180
7
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Continuous Collector Current
Peak Pulse Current
0.5
1
A
A
I
CM
Peak Base Current
0.5
A
I
BM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
(Note 5)
(Note 6)
(Note 7)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
3.9
2.1
1.6
32
59
80
Power Dissipation
W
P
D
Thermal Resistance, Junction to Ambient Air
R
θ
JA
C/W
C
Thermal Resistance, Junction to Leads
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
8.4
R
θ
JL
R
θ
JC
(Note 9)
14.6
-55 to +150
T
J
, T
STG
ESD Ratings
(Note 10)
Characteristic
Electrostatic Discharge – Human Body Model
Electrostatic Discharge – Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
Notes:
5. For
a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same
as note (5), except mounted on 25mm x 25mm 1oz copper.
7. Same
as note (5), except mounted on minimum recommended pad (MRP) layout.
8. Thermal
resistance from junction to solder-point (on the exposed collector pad).
9. Thermal
resistance from junction to the top of the case.
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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December 2013
© Diodes Incorporated
DXT696BK
Document number: DS36574 Rev. 1 – 2
DXT696BK
Thermal Characteristics and Derating Information
1
1
100m
10m
DC
DC
1s
1s
100ms
10ms
100m
10m
100ms
10ms
1ms
100µs
T
amb
=25°C
1ms
T
amb
=25°C
25mm x 25mm
1oz FR4
50mm x 50mm
2oz FR4
100µs
1
10
100
1
10
100
V
CE
Collector-Emitter Voltage (V)
V
CE
Collector-Emitter Voltage (V)
Safe Operating Area
Safe Operating Area
T
amb
=25°C
T
amb
=25°C
60
50
40
30
20
10
0
30
20
10
0
25mm x 25mm
1oz FR4
50mm x 50mm
2oz FR4
D=0.5
D=0.5
D=0.2
D=0.2
Single Pulse
Single Pulse
D=0.05
D=0.1
D=0.05
D=0.1
100µ 1m
10m 100m
1
10
100
1k
100µ 1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
4.0
Single Pulse
T
amb
=25°C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50mm x 50mm
2oz FR4
100
50mm x 50mm
2oz FR4
25mm x 25mm
1oz FR4
10
25mm x 25mm
1oz FR4
1
100µ 1m
10m 100m
1
10
100
1k
0
20 40 60 80
100 120 140 160
Pulse Width (s)
Temperature (°C)
Pulse Power Dissipation
Derating Curve
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December 2013
© Diodes Incorporated
DXT696BK
Document number: DS36574 Rev. 1 – 2
DXT696BK
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
Min
180
180
7
Typ
—
Max
—
Unit
V
Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
I
C
= 100µA
—
—
V
I
C
= 1mA
—
—
V
I
E
= 100µA
—
Collector-Base Cutoff Current
Emitter Cutoff Current
—
—
100
100
nA
nA
V
CB
= 140V
V
EB
= 5V
C
= 100mA, V
CE
= 5V
—
I
EBO
I
500
150
—
—
—
—
DC Current Gain (Note 11)
h
FE
I
C
= 200mA, V
CE
= 5V
I
C
= 50mA, I
B
= 0.5mA
Ic = 100mA, I
B
= 2.0mA
I
C
= 200mA, I
B
= 5.0mA
200
200
250
—
—
—
—
—
—
Collector-Emitter Saturation Voltage (Note 11)
mV
V
CE(sat)
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
Input Capacitance
—
—
—
—
70
—
—
—
—
900
900
—
mV
mV
pF
V
BE(sat)
V
BE(on)
C
ibo
C
obo
f
T
I
C
= 200mA, I
B
= 5mA
I
C
= 200mA, V
CE
= 5V
V
EB
= 0.5V, f = 1MHz
200
6
Output Capacitance
—
pF
V
CE
= 10V,
f = 1MHz
V
CE
= 5V, I
C
= 50mA, f=50MHz
Current Gain-Bandwidth Product
Turn-On Time
—
—
MHz
ns
80
—
t
on
V
CC
= 50V, I
C
= 100mA
I
B1
= -I
B2
= 10mA
Turn-Off Time
4,400
—
ns
t
off
Note:
11. Measured under pulsed conditions. Pulse width
≤
300 µs. Duty cycle
≤
2%.
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December 2013
© Diodes Incorporated
DXT696BK
Document number: DS36574 Rev. 1 – 2
DXT696BK
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
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December 2013
© Diodes Incorporated
DXT696BK
Document number: DS36574 Rev. 1 – 2
DXT696BK
Package Outline Dimensions
TO252
Dim Min
Max Typ
2.19 2.39 2.29
A1
0.00 0.13 0.08
A2
0.97 1.17 1.07
E
b3
A
A
c2
L3
b
0.64 0.88
0.783
b2
0.76 1.14 0.95
b3
5.21 5.46 5.33
c2
0.45 0.58
0.531
E1
A2
D
H
D
6.00 6.20 6.10
D1
5.21
e
2.286
E
6.45 6.70 6.58
L4
A1
E1
4.32
H
L
9.40 10.41 9.91
1.40 1.78 1.59
L
e
L3
0.88 1.27 1.08
L4
0.64 1.02 0.83
3X b
2X b2
a
a
0°
10°
All Dimensions in mm
Suggested Pad Layout
X2
Dimensions
Z
Value (in mm)
11.6
1.5
7.0
2.5
7.0
6.9
2.3
Y2
X1
X2
Y1
Y2
C
Z
C
Y1
E1
X1
E1
Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device
Terminals and PCB tracking.
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December 2013
© Diodes Incorporated
DXT696BK
Document number: DS36574 Rev. 1 – 2
DXT696BK
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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December 2013
© Diodes Incorporated
DXT696BK
Document number: DS36574 Rev. 1 – 2
