Diodes-Incorporated-DXTN07100BFG-7

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Diodes-Incorporated-DXTN07100BFG-7
DXTN07100BFG  
100V NPN HIGH PERFORMANCE TRANSISTOR IN PowerDI3333-8  
Features  
Mechanical Data  
®
Case: PowerDI
 
3333-8  
BV

CEO

> 100V  
Small Form Factor Thermally Efficient Package. Enables Higher  
Density End Products  
Case Material: Molded Plastic. “Green” Molding Compound
.  
UL Flammability Rating 94V-0  
I

C

= 2A High Continuous Current  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish – Matte Tin Solderable per MIL-STD-202,  
Method 208  
I

CM

= 6A Peak Pulse Current  
Low Saturation Voltage V

CE(SAT)

< 250mV @ 1A  
Complementary PNP Type: DXTP07100BFG  
Rated to +175°C
–
Ideal for High Temperature Environment  
Wettable Flank for Improved Optical Inspection  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Weight: 0.03 grams (Approximate)  
Applications  
Load Switch  
Linear Regulator  
MOSFET or IGBT Gate Driving  
PowerDI3333-8 (SWP) (Type UX)  
Equivalent Circuit  
C
C
C
C
B
E
E
E
Pin1  
Top View  
Device Symbol  
Bottom View  
Ordering Information
(Note 4)  
Part Number  
DXTN07100BFG-7  
Marking  
2H7  
Reel Size (inches)  
Tape Width (mm)  
12  
Quantity per Reel  
7
2,000  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.  
2. See

r more information about Diodes Incorporated’s
definitions of Halogen- and Antimony-free, “Green” and  
Lead-free.  
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at

Marking Information  
PowerDI3333-8 (SWP) (Type UX)  
2H7 = Product Type Marking Code  
YYWW = Date Code Marking  
YY = Last Two Digits of Year (ex: 18 = 2018)  
WW = Week Code (01 to 53)  
2H7  
PowerDI is a registered trademark of Diodes Incorporated.  
1 of 7  
October 2018  
© Diodes Incorporated  
DXTN07100BFG  
Document number: DS41044
 
Rev. 2 – 2  

DXTN07100BFG  
Absolute Maximum Ratings
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
V

CBO  

V

CEO  

V

EBO  

I

C  

Value  
120  
100  
7
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Continuous Collector Current  
Peak Pulse Current  
2
A
6
A
I

CM  

Thermal Characteristics
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Value  
0.9  
2.1  
3.1  
140  
65  
Unit  
W
(Note 5)  
(Note 6)  
(Note 7)  
(Note 5)  
(Note 6)  
(Note 7)  
Power Dissipation  
W
P

D  

W
°C/W
 
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
R

  

JA  
44  
Thermal Resistance, Junction to Leads (Note 8)  
Operating and Storage Temperature Range  
8.5  
R

  

JL  
-55 to +175  
°C  
T

J,

T

STG  

ESD Ratings
(Note 9)  
JEDEC Class  
Characteristic  
Electrostatic Discharge
—
Human Body Model  
Electrostatic Discharge
—
Machine Model  
Symbol  
ESD HBM  
ESD MM  
Value  
4000  
400  
Unit  
V
3A  
C
V
Notes:  
5. For a device mounted with the collector tab on MRP FR4-PCB; device is measured under still air conditions whilst operating in a steady-state.  
6. Same as Note 5, except the device is mounted on 25mm × 25mm 2oz copper.  
7. Same as Note 5, except the device is mounted on 50mm × 50mm 2oz copper.  
8. Thermal resistance from junction to solder-point (at the collector tab).  
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  
2 of 7  
October 2018  
© Diodes Incorporated  
DXTN07100BFG  
Document number: DS41044
 
Rev. 2 – 2  

DXTN07100BFG  
Thermal Characteristics and Derating Information  
10  
V

CE

(Limit)  
1
P

W

= 0.1ms  
P

W

= 1ms  
P

W

= 10ms  
P

W

= 100ms  
0.1  
0.01  
T

A

= 25
℃
 
P

W

= 1s  
DC  
Single Nonrepetitive  
Pulse  
DUT mounted on  
1*MRP FR-4 Board  
Max T

J

= 175
℃  
0.001  
0.1  
1
10  
100  
1000  
V

CE

, COLLECTOR EMITTER VOLTAGE (V)  
SOA, Safe Operation Area  
T

A

= 25°C  
T

A

= 25°C  
50mm x 50mm  
2oz FR-4  
25mm x 25mm  
2oz FR-4  
50mm x 50mm  
2oz FR-4  
Single Pulse  
T

A

= 25°C  
50mm x 50mm  
2oz FR-4  
25mm x 25mm  
2oz FR-4  
25mm x 25mm  
2oz FR-4  
3 of 7  
October 2018  
© Diodes Incorporated  
DXTN07100BFG  
Document number: DS41044
 
Rev. 2 – 2  

DXTN07100BFG  
Electrical Characteristics
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
BV

CBO  

BV

CEO  

BV

EBO  

Min  
120  
100  
7
Typ  
264  
129  
8.4  
—
Max  
—
Unit  
V
Test Condition  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 10)  
Emitter-Base Breakdown Voltage  
I

C

= 100µA  
—
V
I

C

= 10mA  
—
V
I

E

= 100µA  
—
50  
nA  
µA  
nA  
mV  
mV  
V
V

CB

= 100V  
Collector Cut-Off Current  
I

CBO  

I

EBO  

—
—
10  
V

CB

= 100V, T

A

= +125°C  
V

EB

= 6V  
Emitter Cut-Off Current  
—
—
20  
—
90  
250  
400  
1
I

C

= 1A, I

B

= 100mA  
I

C

= 2A, I

B

= 200mA  
I

C

= 1A, I

B

= 100mA  
I

C

= 1A, V

CE

= 2V  
I

C

= 50mA, V

CE

= 2V  
I

C

= 500mA, V

CE

= 2V  
I

C

= 1A, V

CE

= 2V  
I

C

= 2A, V

CE

= 2V  
Collector-Emitter Saturation Voltage (Note 10)  
V

CE(SAT)  

—
150  
0.86  
0.79  
183  
172  
113  
56  
Base-Emitter Saturation Voltage (Note 10)  
Base-Emitter Turn-On Voltage (Note 10)  
—
V

BE(SAT)  

V

BE(ON)  

—
0.95  
—
V
70  
100  
55  
25  
—
—
—
—
300  
—
DC Current Gain (Note 10)  
h

FE  

—
V

CE

= 5V, I

C

= 100mA,  
f = 100MHz  
Current Gain-Bandwidth Product  
140  
175  
—
MHz  
f

T  

t

ON  

t

OFF  

—
—
—
80  
1200  
—
—
—
30  
ns  
ns  
pF  
I

C

= 500mA, V

CC

= 10V,  
I

B1

= -I

B2

= 50mA  
Switching Time  
Output Capacitance  
C

OBO  

V

CB

= 10V, f = 1MHz  
Note:  
10. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%.  
4 of 7  
October 2018  
© Diodes Incorporated  
DXTN07100BFG  
Document number: DS41044
 
Rev. 2 – 2  

DXTN07100BFG  
Typical Electrical Characteristics
(@T

A

= +25°C, unless otherwise specified.)  
500.00  
450.00  
400.00  
350.00  
300.00  
250.00  
200.00  
150.00  
100.00  
50.00  
1200.00  
1000.00  
800.00  
600.00  
400.00  
200.00  
175

o

C  
150

o

C  
125

o

C  
85

o

C  
25

o

C  
-55

o

C  
-55

o

C  
25

o

C  
85

o

C  
125

o

C  
150

o

C  
0.01  
175

o

C  
0.00  
0.0001  
0.001  
0.01  
0.1  
1
10  
0.0001  
0.001  
0.1  
1
10  
I

C

, COLLECTOR CURRENT (A)  
V

CE(SAT)

vs. I

C  

I

C

, COLLECTOR CURRENT (A)  
V

BE(SAT)

vs. I

C  

1000.00  
100.00  
10.00  
V

CE

= 2V  
150

o

C  
1100.00  
900.00  
700.00  
500.00  
300.00  
100.00  
175

o

C  
125

o

C  
-55

o

C  
85

o

C  
25

o

C  
-55

o

C  
25

o

C  
85

o

C  
125

o

C  
150

o

C  
175

o

C  
0.00001 0.0001
 
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
I

C

, COLLECTOR CURRENT (A)  
h

FE

vs. I

C  

I

C

, COLLECTOR CURRENT (A)  
V

BE(ON)

vs. I

C  

I

C

, COLLECTOR CURRENT (A)  
Switching Speeds  
5 of 7  
October 2018  
© Diodes Incorporated  
DXTN07100BFG  
Document number: DS41044
 
Rev. 2 – 2  

DXTN07100BFG  
Package Outline Dimensions  
Please see

r the latest version.  
PowerDI3333-8 (SWP) (Type UX)  
D
A
D1  
A1  
PowerDI3333-8 (SWP)  
(Type UX)  
Dim Min
 
Max Typ  
A
0.75 0.85 0.80  
A1
0.00 0.05  
—  
E1  
E
b
c
0.25 0.40 0.32  
0.10 0.25 0.15  
3.20 3.40 3.30  
D
D1
2.95 3.15 3.05  
D2
2.30 2.70 2.50  
0
E
3.20 3.40 3.30  
c
Detail A  
E1
2.95 3.15 3.05  
E2
1.60 2.00 1.80  
E3
0.95 1.35 1.15  
E4
0.10 0.30 0.20  
Detail A  
L
e
k
L
θ
0.65  
  
  
E4  
E3  
k
0.50 0.90 0.70  
0.30 0.50 0.40  
E2  
0
°
  
12
°
  
10
°  
0.050  
All Dimensions in mm  
D2  
0.150  
L
e
b
Suggested Pad Layout  
Please see

r the latest version.  
PowerDI3333-8 (SWP) (Type UX)  
X3  
X1  
X2  
Dimensions Value
 
(in mm)  
Y1  
Y2  
C
0.650  
0.420  
0.420  
0.230  
2.600  
3.500  
0.700  
0.550  
1.650  
0.600  
2.450  
0.400  
3.700  
X
X1  
X2  
X3  
X4  
Y
Y4  
Y3  
Y5  
Y6  
Y1  
Y2  
Y3  
Y4  
Y5  
Y6  
X4  
Y
X
C
Note:  
For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between  
device terminals and PCB tracking.  
6 of 7  
October 2018  
© Diodes Incorporated  
DXTN07100BFG  
Document number: DS41044
 
Rev. 2 – 2  

DXTN07100BFG  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life
 
support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A
 
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2018, Diodes Incorporated  
7 of 7  
October 2018  
© Diodes Incorporated  
DXTN07100BFG  
Document number: DS41044
 
Rev. 2 – 2