Diodes-Incorporated-DXTP03200BP5Q-13
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DXTP03200BP5Q
200V PNP HIGH VOLTAGE TRANSISTOR IN POWERDI5
Description
Mechanical Data
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirements of Automotive Applications.
•
•
Case: PowerDI
®
5
Case Material:
Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Lead-
frame. Solderable per MIL-STD-202, Method 208
Weight: 0.093 grams (Approximate)
•
•
•
Features
Application
•
•
•
•
•
•
•
•
•
BV
CEO
= -200V
•
•
•
DC – DC Conversion
I
C
= -2A High Continuous Collector Current
I
CM
= -5A Peak Collector Current
Telecoms
Power management
P
D
up to 3.2W
43% smaller than SOT223; 60% smaller than TO252 (DPAK)
Maximum height just 1.1mm
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DXTP03200BP5Q is suitable for automotive applications
requiring specific change control; this part is AEC-Q101
qualified, PPAP capable, and manufactured in IATF16949
certified facilities.
C
C
E
PowerDI
®
5
B
B
E
Top View
Bottom View
Pin-Out Diagram
Device Schematic
Ordering Information
(Note 4)
Product
DXTP03200BP5Q-13
Compliance
Automotive
Marking
DTP3200B
Reel size (inches)
Tape width (mm)
Quantity per reel
13
16
5,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
PowerDI
®
5
DTP3200B = Product Type Marking Code
= Manufacturers’ Code Marking
K = Factory Designator
DTP3200B
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 19 for 2019)
WW = Week Code (01 to 53)
YYWWK
PowerDI is a registered trademark of Diodes Incorporated
1 of 7
June 2020
© Diodes Incorporated
DXTP03200BP5Q
Document number: DS42383 Rev. 1 – 2
DXTP03200BP5Q
Absolute Maximum Ratings
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-220
-200
-7
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Continuous Collector Current
Base Current
-2
A
-1
A
I
B
Peak Pulse Current
-5
A
I
CM
Thermal Characteristics
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Symbol
Value
3.2
Unit
W
P
D
Thermal Resistance, Junction to Ambient Air (Note 5)
Power Dissipation (Note 6)
39
°C/W
W
R
θ
JA
1.7
P
D
Thermal Resistance, Junction to Ambient Air (Note 6)
Power Dissipation (Note 7)
75
°C/W
W
R
θ
JA
0.74
169
P
D
Thermal Resistance, Junction to Ambient Air (Note 7)
Thermal Resistance, Junction to Lead (Note 8)
Operating and Storage Temperature Range
°C/W
°C/W
°C
R
θ
JA
5.6
R
θ
JL
-55 to +150
T
J
, T
STG
ESD Ratings
(Note 9)
Characteristic
Electrostatic Discharge – Human Body Model
Electrostatic Discharge – Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
Notes:
5. Device mounted on FR-4 PCB, single sided 2 oz. copper, collector pad dimensions 50mm x 50mm.
6. Device mounted on FR-4 PCB, single sided 1 oz. copper, collector pad dimensions 25mm x 25mm.
7. Device mounted on FR-4 PCB, single sided 1 oz. copper, minimum recommended pad layout.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
2 of 7
June 2020
© Diodes Incorporated
DXTP03200BP5Q
Document number: DS42383 Rev. 1 – 2
DXTP03200BP5Q
Thermal Characteristics and Derating Information
10
1
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
DC
V
C
E(sat)
2oz 50mm x 50mm
1oz 25mm x 25mm
1s
Limited
100m
10m
1m
100ms
10ms
1oz min copper
1ms
100µs
Single Pulse. T
a
mb
=25°C
1oz 25mm x 25mm FR4
100m
1
10
100
0
25
50
75 100
125 150 175
-V
CE
C
ollector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
80
70
60
50
40
30
20
10
0
Single Pulse. T
a
mb
=25°C
1oz 25mm x 25mm FR4
1oz 25mm x 25mm FR4
D=0.5
100
10
1
D=0.2
Single Pulse
D=0.05
D=0.1
100µ 1m 10m
100m
1
10 100 1k
100µ 1m 10m
100m
1
10 100 1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
4
3
2
1
0
180
T
(a
m
b
)
=25°C
T
(a
m
b
)
=25°C
160
140
120
100
80
1 oz. weight Copper
2 oz. weight Copper
60
1 oz. weight Copper
1000 10000
2 oz. weight Copper
100
40
20
10
1000
10000
10
100
Copper Area (sq mm)
Copper Area (sq mm)
Power Rating vs. Cu Area
Thermal Resistance vs. Cu Area
3 of 7
June 2020
© Diodes Incorporated
DXTP03200BP5Q
Document number: DS42383 Rev. 1 – 2
DXTP03200BP5Q
Electrical Characteristics
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Min
-220
-200
-7
Typ
-245
-225
-8.4
Max
Unit
V
Test Condition
−
−
−
I
C
= -100µA
V
I
C
= -10mA
V
I
E
= -100µA
<1
−
<1
-50
-0.5
nA
µA
V
CB
= -200V
V
CB
= -200V, T
A
= +100°C
V
EB
= -6V
Collector Cutoff Current
Emitter Cutoff Current
−
−
I
CBO
I
EBO
-10
nA
I
C
= -0.1A, I
B
= -10mA
I
C
= -0.5A, I
B
= -25mA
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -400mA
I
C
= -2A, I
B
= -400mA
V
CE
= -5V, I
C
= -2A
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -1A
V
CE
= -5V, I
C
= -2A
V
CE
= -5V, I
C
= -5A
−
−
−
−
-37
-50
-130
-135
-180
-155
-160
-275
Collector-Emitter Saturation Voltage (Note 10)
mV
V
CE(sat)
Base-Emitter Saturation Voltage (Note 10)
Base-Emitter Turn-On Voltage (Note 10)
-955
-860
-1,100
-1,000
mV
mV
−
−
V
BE(sat)
V
BE(on)
100
100
20
−
300
−
195
170
50
DC Current Gain (Note 10)
h
FE
−
5
−
−
V
CE
= -10V, I
C
= -100mA,
f = 50MHz
Transition Frequency
105
MHz
−
−
f
T
Output Capacitance
Delay Time
31
21
pF
ns
ns
ns
ns
C
obo
t
d
−
−
−
−
−
−
−
−
−
−
V
CB
= -10V, f = 1MHz
Rise Time
18
t
r
V
CC
= -50V, I
C
= -1A,
I
B1
= -I
B2
= -100mA
Storage Time
Fall Time
680
75
t
s
t
f
Note:
10. Pulse Test: Pulse width
≤
300µs. Duty cycle
≤
2.0%.
4 of 7
June 2020
© Diodes Incorporated
DXTP03200BP5Q
Document number: DS42383 Rev. 1 – 2
DXTP03200BP5Q
Typical Electrical Characteristics
(@ T
A
= +25°C, unless otherwise specified.)
1
100m
10m
0.4
0.3
0.2
0.1
0.0
Tamb=25°C
I
C
/I
B
=10
I
C
/I
B
=20
I
C
/I
B
=10
150°C
100°C
I
C
/I
B
=5
1
25°C
-55°C
– I
C
10
m
C
ollector Current (A)
– I
C
ollector Current (A)
1
1m
100m
10m
100m
C
V
C
E(sat)
v I
C
V
C
E(sat)
v I
C
V
C
E
=5V
-55°C
25°C
I
C
/I
B
=5
1.0
0.8
0.6
0.4
0.2
350
300
250
200
150
100
50
150°C
100°C
25°C
150°C
100°C
-55°C
0
– I
C
10
m
C
ollector Current (A)
1m
100m
1
1m
100m
1
– I
10
m
C
ollector Current (A)
h
FE
v I
C
C
V
B
E(sat)
v I
C
700
600
500
400
300
200
100
0
V
C
E
=5V
1.0
0.8
0.6
0.4
0.2
-55°C
f = 1MHz
25°C
Cibo
150°C
100°C
Cobo
100
10m
100m
1
10
– I
C
10
m
C
ollector Current (A)
1m
100m
1
– Voltage(V)
Capacitance v Voltage
V
B
E(on)
v I
C
5 of 7
June 2020
© Diodes Incorporated
DXTP03200BP5Q
Document number: DS42383 Rev. 1 – 2
DXTP03200BP5Q
Package Outline Dimensions
PowerDI5
E1
A1
E1/2
e
b2
D
PowerDI5
Dim
A
Min
1.05 1.15
0.00 0.05
0.33 0.43 0.381
0.80 0.99
1.70 1.88
Max
Typ
1.10
—
2X b1
A1
A2
b1
b2
D
E/2
A
0.89
1.78
E
A2
3.90 4.05 3.966
D2
E
e
E1
E2
L
L1
W
—
6.40 6.60
— —
5.30 5.45
— —
0.75 0.95
0.50 0.65
1.10 1.41 1.255
—
3.054
6.51
1.84
5.37
3.549
0.85
0.57
5
°±
1°
E2
L1
L1
All Dimensions in mm
W
D2
L
L
Suggested Pad Layout
PowerDI5
X1
X2
Dimensions Value
(in mm)
C
G
X
X1
X2
Y
1.840
0.852
1.400
4.860
1.310
1.390
3.360
C
Y1
Y
Y1
X
G
Note:
For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between
device Terminals and PCB tracking.
6 of 7
June 2020
© Diodes Incorporated
DXTP03200BP5Q
Document number: DS42383 Rev. 1 – 2
DXTP03200BP5Q
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
7 of 7
June 2020
© Diodes Incorporated
DXTP03200BP5Q
Document number: DS42383 Rev. 1 – 2
Mouser Electronics
Authorized Distributor
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