Diodes-Incorporated-DZTA42Q-13

DZTA42Q  

300V NPN HIGH VOLTAGE TRANSISTOR IN SOT223  

Mechanical Data  

Description  





Case: SOT223  

This Bipolar Junction Transistor (BJT) is designed to meet the  

stringent requirements of Automotive Applications.  

Case Material: Molded P

lastic. “Green”

Molding Compound. UL  

Flammability Rating 94V-0  





Moisture Sensitivity: Level 1 per J-STD-020  

Terminals: Finish – Matte Tin. Solderable per MIL-STD-202,  

Method 208  

Features  



Weight: 0.112 grams (Approximate)  



















BV

CEO

> 300V  

I

C

= 500mA High Collector Current  

2W Power Dissipation  

Applications  

Low Saturation Voltage V

CE(SAT)

< 500mV @ 20mA  

Complementary PNP Type: DZTA92  

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  

Halogen and Antimony Free. “Green” Device (Note 3)  

Qualified to AEC-Q101 Standards for High Reliability  

PPAP Capable (Note 4)  







Switch-Mode Power Supplies (SMPS)  

Video Output Stages  

Motor Driver  

SOT223  

C

E

B

Top View  

Pin-Out  

Top View  

Device Symbol  

Ordering Information

(Note 5)  

Part Number  

DZTA42Q-13  

Compliance  

Automotive  

Marking  

K3M  

Reel Size (inches)  

13  

Tape Width (mm)  

12  

Quantity per Reel  

2,500  

Notes:  

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.  

2. See

r more information about Diodes Incorporated’s definitions of Halogen

– and Antimony-free, “Green” and  

Lead-free.  

3. Halogen- and Antimony-

free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  

<1000ppm antimony compounds.  

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to

5. For packaging details, go to our website at

Marking Information  

SOT223  

(

T

op View)  

(Top View)  

K3M = Product Type Marking Code  

= Manufacturer’s Code Marking  

YWW = Date Code Marking  

Y = Last Digit of Year (ex: 8 = 2018)  

WW = Week Code (01 to 53)  

YWW  

WW  

Y

K3M  

1 of 7  

April 2018  

© Diodes Incorporated  

DZTA42Q  

Datasheet Number: DS38748

 

Rev. 2 – 2  

DZTA42Q  

Absolute Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

300  

300  

6

Unit  

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current  

V

V

500  

100  

mA  

mA  

Base Current  

I

B  

Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Symbol  

Value  

Unit  

(Note 6)  

(Note 7)  

(Note 6)  

(Note 7)  

(Note 8)  

2

1

Power Dissipation  

W

P

D  

62  

Thermal Resistance, Junction to Ambient  

°C/W  

R

θ

JA  

125  

19.4  

Thermal Resistance, Junction to Leads  

°C/W  

°C  

R

θ

JL  

Operating and Storage Temperature Range  

-65 to +150  

T

J,

T

STG  

ESD Ratings

(Note 9)  

Characteristic  

Electrostatic Discharge – Human Body Model  

Electrostatic Discharge – Machine Model  

Symbol  

ESD HBM  

ESD MM  

Value  

4,000  

400  

Unit  

V

JEDEC Class  

3A  

C

V

Notes:  

6. For a device mounted with the collector lead on 50mm x 50mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured  

under still air conditions whilst operating in a steady-state.  

7. Same as note (6), except mounted on minimum recommended pad (MRP) layout.  

8. Thermal resistance from junction to solder-point (at the end of the collector lead).  

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  

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April 2018  

© Diodes Incorporated  

DZTA42Q  

Datasheet Number: DS38748

 

Rev. 2 – 2  

DZTA42Q  

Thermal Characteristics and Derating Information  

160  

140  

120  

100  

80  

60  

50  

40  

30  

20  

10  

0

50mm x 50mm 1oz Cu  

=

25

O

C  

50mm x 50mm 1oz Cu  

=

25

O

C  

T

A

T

A

Single pulse  

D=0.5  

D=0.2  

60  

Single Pulse  

D=0.05  

D=0.1  

40  

20  

0

µ

µ

100μ

1m 10m

 

100m  

1

10  

100  

1k  

100

μ

1m 10m

 

100m  

1

10  

100  

1k  

Pulse Width (s)  

Pulse Width (s)  

Transient Thermal Impedance  

Pulse Power Dissipation  

Single Pulse Test at T

A

= 25°C  

50mm x 50mm  

1oz Cu  

2.0  

1.5  

1.0  

0.5  

0.0  

0

20  

40  

60  

80 100

 

120 140 160  

Temperature (

O

C)  

V

CE

, Collector-Emitter Voltage (V)  

Derating Curve  

Safe Operating Area  

3 of 7  

April 2018  

© Diodes Incorporated  

DZTA42Q  

Datasheet Number: DS38748

 

Rev. 2 – 2  

DZTA42Q  

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

OFF CHARACTERISTICS  

Symbol  

Min  

Typ  

Max  

Unit  

Test Condition  

Collector-Base Breakdown Voltage  

Collector-Emitter Breakdown Voltage (Note 10)  

Emitter-Base Breakdown Voltage  

Collector-Base Cut-off Current  

BV

CBO  

BV

CEO  

BV

EBO  

I

CBO  

300  

300  

6

—

—

—

—

—

—

—

V

V

I

C

= 100µA  

I

C

= 1mA  

—

V

I

E

= 100µA  

V

CB

= 200V  

V

EB

= 6V  

—

0.1  

0.1  

µA  

µA  

Emitter-Base Cut-off Current  

I

EBO  

—

ON CHARACTERISTICS (Note 10)  

Collector-Emitter Saturation Voltage  

Base-Emitter Saturation Voltage  

—

—

—

—

V

CE(SAT)  

V

BE(SAT)  

0.5  

0.9  

—

V

V

I

C

= 20mA, I

B

= 2mA  

I

C

= 20mA, I

B

= 2mA  

I

C

= 1mA, V

CE

= 10V  

I

C

= 10mA, V

CE

= 10V  

I

C

= 30mA, V

CE

= 10V  

25  

40  

40  

—

—

—

Static Forward Current Transfer Ratio  

h

FE  

—

—

—

SMALL SIGNAL CHARACTERISTICS  

Transition Frequency  

I

C

= 10mA, V

CE

= 20V  

f = 100MHz  

50  

—

—

—

MHz  

pF  

f

T  

Output Capacitance  

—

3

C

OBO  

V

CB

= 20V, f = 1MHz  

Note:  

10.

Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.  

Typical Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

0.2  

I

= 10mA  

= 8mA  

B

I

B

0.15  

I

= 6mA  

B

I

= 4mA  

B

0.1  

I

I

= 2mA  

B

= 1mA  

B

0.05  

0

0

1

2

3

4

5

V

CE

, COLLECTOR-EMITTER VOLTAGE (V)  

Figure 1 Typical Collector Current  

vs. Collector-Emitter Voltage  

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April 2018  

© Diodes Incorporated  

DZTA42Q  

Datasheet Number: DS38748

 

Rev. 2 – 2  

DZTA42Q  

1

0.5  

0.4  

I

/I =

 

10  

B

C

0.8  

0.6  

0.4  

0.2  

0

0.3  

0.2  

T

= 150

°

C  

A

T

= 85

°

C  

A

T

= 25

°

C  

A

0.1  

0

T

= -55

°

C  

A

0.01  

0.1  

1

10  

100  

1,000  

0.001 0.01  

0.1  

1

10  

100 1,000  

I

C

, COLLECTOR CURRENT (mA)  

I

C

, COLLECTOR CURRENT (mA)  

Figure 4 Typical Base-Emitter Turn-On Voltage  

vs. Collector Current  

Figure 3 Typical Collector-Emitter Saturation Voltage  

vs. Collector Current  

120  

100  

1.2  

f = 1MHz  

I

/I =

 

10  

B

C

1

80  

60  

40  

0.8  

0.6  

0.4  

T

= -55

°

C  

= 25

°

C  

A

T

C

C

IB  

ib  

O

o

A

T

= 85

°

C  

A

20  

0

0.2  

0

C

C

OBO  

ob

o  

0.01  

0.1  

V

R

, REVERSE VOLTAGE (V)  

Figure 6 Typical Capacitance Characteristics  

1

10  

100  

0.01  

0.1  

1

10  

100  

1,000  

I

C

, COLLECTOR CURRENT (mA)  

Figure 5 Typical Base-Emitter Saturation Voltage  

vs. Collector Current  

200  

160  

120  

80  

V

= 20V  

CE  

40  

0

f = 100MHz  

0

20  

40  

60  

80  

100  

(mA)  

I

C

, COLLECTOR CURRENT  

Figure 7 Typical Gain-Bandwidth Product vs. Collector Current  

5 of 7  

April 2018  

© Diodes Incorporated  

DZTA42Q  

Datasheet Number: DS38748

 

Rev. 2 – 2  

DZTA42Q  

Package Outline Dimensions  

Please see

r the latest version.  

SOT223  

D

Q

b1  

SOT223  

Dim Min Max Typ  

C

A

1.55 1.65 1.60  

A1

0.010 0.15

 

0.05  

b

b1  

C

D

E

E1  

e

e1  

L

0.60 0.80 0.70  

2.90 3.10 3.00  

0.20 0.30 0.25  

6.45 6.55 6.50  

3.45 3.55 3.50  

6.90 7.10 7.00  

E

E1  

Gauge  

Plane  

0.25  

–

–

–

–

4.60  

2.30  

Seating  

Plane  

L

0.85 1.05 0.95  

0.84 0.94 0.89  

e1  

b

Q

-10°  

All Dimensions in mm  

0°  

e

A

A1  

7°  

Suggested Pad Layout  

Please see

r the latest version.  

SOT223  

X1  

Dimensions Value

 

(in mm)  

Y1  

C

C1  

X

2.30  

6.40  

1.20  

3.30  

1.60  

1.60  

8.00  

X1  

Y

Y1  

Y2  

C1 Y2  

Y

C

X

Note:  

For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between  

device terminals and PCB tracking.  

6 of 7  

April 2018  

© Diodes Incorporated  

DZTA42Q  

Datasheet Number: DS38748

 

Rev. 2 – 2  

DZTA42Q  

IMPORTANT NOTICE  

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  

website, harmless against all damages.  

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  

noted herein may also be covered by one or more United States, international or foreign trademarks.  

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  

final and determinative format released by Diodes Incorporated.  

LIFE SUPPORT  

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  

A. Life

 

support devices or systems are devices or systems which:  

1. are intended to implant into the body, or  

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  

labeling can be reasonably expected to result in significant injury to the user.  

B. A

 

critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  

failure of the life support device or to affect its safety or effectiveness.  

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  

Copyright © 2018, Diodes Incorporated  

7 of 7  

April 2018  

© Diodes Incorporated  

DZTA42Q  

Datasheet Number: DS38748

 

Rev. 2 – 2