Diodes-Incorporated-FCX1051ATA

FCX1051A  

SOT89 NPN medium power transistor  

Summary  

BV  

> 40V  

CEO  

I

= 3A  

C(cont)  

V

< 120mV @ 1A  

= 57m

⍀

 

CE(sat)  

CE(sat)  

R

P =

 

2W  

D

Complimentary type – FCX1151A  

Description  

C

E

An NPN low voltage, high gain bipolar transistor offering very low  

saturation voltage and excellent current handling in the SOT89  

package.  

B

Features  

•

•

•

Very low saturation voltage  

High gain  

Small outline package  

Applications  

•

•

•

•

Motor drive  

E

C

B

Strobe flash  

MOSFET and IGBT gate driving  

DC -DC converters  

C

Ordering information  

Pinout – top view  

Device  

Reel size  

(inches)  

T

a

pe width  

(mm)  

Quantity  

per reel  

FCX1051ATA  

7

12  

1,000  

Device mark  

051  

© Zetex Semiconductors plc 2007  

FCX1051A  

Absolute maximum ratings  

Parameter  

Symbol  

Value  

Unit  

Collector-base voltage  

V

V

V

I

150  

V

CBO  

CEO  

EBO  

CM  

Collector-emitter voltage  

Emitter-base voltage  

40  

5

V

V

(a)  

10  

3

A

Peak pulse current  

Continuous collector current  

I

A

C

(b)  

Power dissipation at T  

= 25°C  

P

W

W

°C  

1

amb  

tot  

(c)  

2

Operating and storage temperature range  

T ;T  

-55 to +150  

j

stg  

NOTES:  

(a) Measured

 

under pulsed conditions. Pulse width=300

␮

s. Duty cycle

Յ

2%. Spice parameter data is available upon  

request for these devices. Refer to the handling instructions for soldering surface mount components.  

(b

)

R

ecommended P

tot

calculated using FR4 measuring 15x15x0.6mm.  

(c) Maximum

 

power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring  

40x40x0.6mm and using comparable measurement methods adopted by other suppliers.  

Typical characteristics  

© Zetex Semiconductors plc 2007  

FCX1051A  

Electrical characteristics

(@ T  

= 25°C unless otherwise stated)  

amb  

Parameter  

Symbol  

Min.  

150  

Typ. Max. Unit

 

Conditions  

Collector-base  

breakdown voltage  

V

V

V

V

V

V

I =

 

100µA  

C

(BR)CBO  

Collector-emitter  

breakdown voltage  

150  

40  

V

I =

 

100µA  

C

CES  

Collector-emitter  

breakdown voltage  

V

I =

 

10mA  

C

CEO  

Collector-emitter  

breakdown voltage  

150  

5

V

I =100µA,

 

V =

 

1V  

C EB  

CEV  

Emitter-base  

breakdown voltage  

V

I =

 

100µA  

E

(BR)EBO  

CBO  

Collector cut-off  

current  

I

0.3  

10  

nA  

V

= 120V  

= 4V  

CB  

Emitter cut-off current  

I

I

0.3  

0.3  

10  

10  

nA  

nA  

V

V

EBO  

CES  

EB  

Collector emitter cut-  

off current  

= 120V  

CES  

(*)  

Collector-emitter  

saturation voltage  

V

17  

25  

120  

180  

250  

340  

1000  

mV  

mV  

mV  

mV  

mV  

mV  

I =

 

0.2A, I

 

= 10mA  

CE(sat)  

C

B

(*)  

85  

I =

 

1A, I

 

= 10mA  

C

B

(*)  

(*)  

140  

170  

250  

880  

I =

 

2A, I

 

= 20mA  

C

B

I =

 

3A, I

 

= 40mA  

C

B

(*)  

I =

 

5A, I

 

= 100mA  

C

B

(*)  

Base-emitte

r

s

aturation V  

voltage  

I =

 

3A, I

 

= 40mA  

BE(sat)  

BE(on)  

C

B

(*)  

Base-emitter turn-on  

voltage  

V

840  

950  

mV  

I =

 

3A, V

CE

= 2V  

C

(*)  

Static forward current  

transfer ratio  

h

290  

270  

270  

130  

40  

440  

450  

360  

220  

55  

1200  

I =

 

10mA, V

 

= 2V  

FE  

C

CE  

(*)  

(*)  

(*)  

I =

 

1A, V

 

= 2V  

C

CE  

I =

 

3A, V

 

= 2V  

C

CE  

I =

 

5A, V

 

= 2V  

C

CE  

(*)  

I =

 

10A, V

 

= 2V  

C

CE  

T

r

ansition frequency  

f

155  

MHz I

 

= 50mA, V

 

= 10V  

T

C

CE  

f = 100MHz  

Output capacitance  

Switching times  

C

27  

40  

pF  

ns  

ns  

V

= 10V, f = 1MHz  

CB  

obo  

t

t

220  

540  

I =

 

3A, I

 

= 30mA, V

 

= 10V  

C B

 

CC  

on  

off  

I =

 

3A, I

 

= 30mA, V

 

= 10V  

C

B

CC  

NOTES:  

(*) Measured under pulsed conditions. Pulse width=300

␮

s. Duty cycle

Յ

2%.  

© Zetex Semiconductors plc 2007  

FCX1051A  

Typical characteristics  

0.5  

0.5  

0.4  

0.3  

0.2  

0.1  

0

+25°C  

IC/IB=100  

0.4  

IC/IB=50  

IC/IB=100  

IC/IB=200  

-55°C  

+25°C  

+100°C  

+150°C  

0.3  

0.2  

0.1  

0

1m  

1m  

1m  

10m  

100m  

1

10  

10  

10  

1m  

10m  

100m  

1

10  

I

C

– Collector Current (A)  

I

C

– Collector Current (A)  

V

CE(sat)

v I

C  

V

CE(sat)

v I

C  

750  

600  

450  

300  

150  

0

VCE=2V  

+100°C  

IC/IB=100  

1.6  

1.2  

0.8  

0.4  

0

-55°C  

+25°C  

+100°C  

+150°C  

+25°C  

-55°C  

10m  

100m  

1

1m  

10m  

100m  

1

10  

I

C

– Collector Current (A)  

I

C

– Collector Current (A)  

h

FE

v I

C  

V

BE(sat)

v I

C  

1.0  

0.8  

0.6  

0.4  

0.2  

0

-55°C  

+25°C  

+100°C  

+150°C  

10m  

100m  

1

I

C

– Collector Current (A)  

V

BE(on)

v I

C  

© Zetex Semiconductors plc 2007  

FCX1051A  

Package outline – SOT89  

D

A

C

D1  

E

E1  

H

L

B

e

B1  

e1  

DIM  

Millimeters  

Inches  

DIM  

Millimeters  

Inches  

Min  

Max  

1.60  

0.56  

0.48  

0.44  

4.60  

1.83  

Min  

Max  

Min  

Max  

2.60  

2.29  

Min  

Max  

0.102  

0.090  

A

B

1.40  

0.44  

0.36  

0.35  

4.40  

1.52  

0.550  

0.017  

0.014  

0.014  

0.173  

0.064  

0.630  

0.022  

0.019  

0.017  

0.181  

0.072  

E

E1  

e

2.29  

2.13  

0.090  

0.084  

B1  

C

1.50 BSC  

3.00 BSC  

0.059 BSC  

0.118 BSC  

e1  

H

D

3.94  

0.89  

4.25  

1.20  

0.155  

0.035  

0.167  

0.047  

D1  

L

Note:

Controlling dimensions are in millimeters. Approximate dimensions are provided in inches  

© Zetex Semiconductors plc 2007  

FCX1051A  

Definitions  

Product change  

Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or  

service. Customers are solely responsible for obtaining the latest relevant information before placing orders.  

Applications disclaimer  

The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for  

the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is  

assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights  

arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,  

tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,  

opportunity or consequential loss in the use of these circuit applications, under any circumstances.  

Life support  

Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written  

approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:  

A. Life

 

support devices or systems are devices or systems which:  

1. are intended to implant into the body  

or  

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  

labeling can be reasonably expected to result in significant injury to the user.  

B. A

 

critical component is any component in a life support device or system whose failure to perform can be reasonably expected to  

cause the failure of the life support device or to affect its safety or effectiveness.  

Reproduction  

The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the  

company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a  

representation relating to the products or services concerned.  

T

e

rms and Conditions  

All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two  

when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.  

For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.  

Quality of product  

Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.  

To

e

nsure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our  

regionally authorized distributors. For a complete listing of authorized distributors please visit:

Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.  

ESD (Electrostatic discharge)  

Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.  

The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent  

of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.  

Devices suspected of being affected should be replaced.  

Green compliance  

Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding reg-  

ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce  

the use of hazardous substances and/or emissions.  

All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with  

WEEE and ELV directives.  

Product status key:  

“Preview”  

“Active”  

Future device intended for production at some point. Samples may be available  

Product status recommended for new designs  

“Last time buy (LTB)”  

Device will be discontinued and last time buy period and delivery is in effect  

“Not recommended for new designs”

Device is still in production to support existing designs and production  

“Obsolete”  

Production has been discontinued  

Datasheet status key:  

“Draft version”  

This term denotes a very early datasheet version and contains highly provisional information, which  

may change in any manner without notice.  

“Provisional version”  

“Issue”  

This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.  

However, changes to the test conditions and specifications may occur, at any time and without notice.  

This term denotes an issued datasheet containing finalized specifications. However, changes to  

specifications may occur, at any time and without notice.  

Zetex sales offices  

Europe  

Americas  

Asia Pacific  

Corporate Headquarters  

Zetex GmbH  

Kustermann-park  

Balanstraße 59  

D-81541 München  

Germany  

Zetex Inc  

Zetex (Asia Ltd)  

Zetex Semiconductors plc  

Zetex

T

e

chnology Park, Chadderton  

Oldham, OL9 9LL  

700 Veterans Memorial Highway  

Hauppauge, NY 11788  

USA  

3701-04 Metroplaza

T

o

wer 1  

Hing Fong Road, Kwai Fong  

Hong Kong  

United Kingdom  

T

e

lefon: (49) 89 45 49 49 0  

Fax: (49) 89 45 49 49 49  

T

e

lephone: (1) 631 360 2222  

Fax: (1) 631 360 8222  

T

e

lephone: (852) 26100 611  

Fax: (852) 24250 494  

T

e

lephone: (44) 161 622 4444  

Fax: (44) 161 622 4446  

© 2007 Published by Zetex Semiconductors plc  

© Zetex Semiconductors plc 2007