Diodes-Incorporated-FCX495TA

FCX495  

150V NPN MEDIUM POWER TRANSISTOR IN SOT89  

Features  

Mechanical Data  













BV

CEO

> 150V  





Case: SOT89  

I

C

= 1A

 

High Continuous

 

Current  

Case Material: Molded Plastic, “Green” Molding Compound

;  

UL Flammability Rating 94V-0  

Low Saturation Voltage V

CE(sat)

< 300mV @ 0.5A  

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  

Halogen and

Antimony Free. “Green” Device (Note

3)  

Qualified to AEC-Q101 Standards for High Reliability  





Moisture Sensitivity: Level 1 per J-STD-020  

Terminals: Finish – Matte Tin Plated Leads;  

Solderable per MIL-STD-202, Method 208  

Weight: 0.052

 

grams (Approximate)  



Application  



Low Loss Power Switching  

C

SOT89  

E

B

C

B

C

E

Top View  

Top View  

Pin-Out  

Device Symbol  

Ordering Information

(Note 4)  

Product  

FCX495TA  

FCX495TC  

FCX495-13R  

Marking  

Reel size (inches)  

Tape width (mm)  

Quantity per reel  

1,000  

N95  

N95  

N95  

7

13  

13  

12  

12  

12  

4,000  

4,000  

Notes:  

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  

2. See

for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, “Green”  

and Lead-Free.  

3.

Halogen and Antimony free “Green” products are defined as

those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)  

and <1000ppm antimony compounds.  

4. For packaging details, go to our website a

Marking Information  

SOT89  

N95  

N95 = Product Type Marking Code  

FCX495  

1 of 6  

September 2015  

© Diodes Incorporated  

Da

tasheet Number: DS33057 Rev. 7 – 2  

FCX495  

Absolute Maximum Ratings

(@T

A

= 25°C, unless otherwise specified.)  

Characteristic  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

170  

150  

7

Unit  

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

V

V

Continuous Collector Current  

Peak Pulse Current  

1

A

2

A

I

CM  

Continuous Base Current  

200  

mA  

I

B  

Thermal Characteristics

(@T

A

= 25°C, unless otherwise specified.)  

Characteristic  

Collector Power Dissipation  

Symbol  

Value  

1

Unit  

W

P

D  

R

θ

JA  

Thermal Resistance, Junction to Ambient Air (Note 5)  

Thermal Resistance, Junction to Leads (Note 6)  

Operating and Storage Temperature Range  

125  

°C/W



 

°C/W

  



C  

10.01  

-65 to +150  

R

θ

JL  

T

J,

T

STG  

Notes:  

5. For the device mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.  

6. Thermal resistance from junction to solder-point (on the exposed collector pad).  

Thermal Characteristics and Derating Information  

V

CE(sat)  

1.0  

0.8  

0.6  

0.4  

0.2  

0.0  

1

100m  

10m  

Limited  

DC  

1s  

100ms  

10ms  

1ms  

10  

100µs  

Single Pulse. T

amb

=25°C  

100m  

1

100  

0

25  

50  

75  

100 125 150  

V

CE

Collector-Emitter Voltage (V)  

Temperature (°C)  

Safe Operating Area  

Derating Curve  

100  

10  

1

120  

100  

80  

60  

40  

20  

0

Single Pulse. T

amb

=25°C  

D=0.5  

Single Pulse  

D=0.2  

D=0.05  

D=0.1  

100µ 1m

 

10m 100m  

1

10  

100  

1k  

100µ 1m

 

10m 100m  

1

10  

100  

1k  

Pulse Width (s)  

Pulse Width (s)  

Transient Thermal Impedance  

Pulse Power Dissipation  

FCX495  

2 of 6  

September 2015  

© Diodes Incorporated  

Da

tasheet Number: DS33057 Rev. 7 – 2  

FCX495  

Electrical Characteristics

(@T

A

= 25°C, unless otherwise specified.)  

Characteristic  

Collector-Base Breakdown Voltage  

Collector-Emitter Breakdown Voltage (Note 7)  

Emitter-Base Breakdown Voltage  

Collector Cut-Off Current  

Symbol  

BV

CBO  

BV

CEO  

BV

EBO  

I

CBO  

Min  

170  

150  

7

Typ  

—

Max  

—

Unit  

V

Test Condition  

I

C

= 100µA  

—

—

V

I

C

= 1mA  

—

—

V

I

E

= 100µA  

V

CB

= 150V  

V

EB

= 5.6V  

V

CE

= 150V  

—

—

100  

100  

100  

nA  

nA  

nA  

Emitter Cut-Off Current  

—

—

I

EBO  

Emitter Cut-Off Current  

—

—

I

CES  

I

C

= 1mA, V

CE

= 10V  

I

C

= 250mA, V

CE

= 10V  

I

C

= 500mA, V

CE

= 10V  

I

C

= 1A, V

CE

= 10V  

100  

100  

50  

—

—

—

—

—

—

—

—

300  

—

—

DC Current Transfer Static Ratio (Note 7)  

h

FE  

10  

0.2  

0.3  

I

C

= 250mA, I

B

= 25mA  

I

C

= 500mA, I

B

= 50mA  

I

C

= 500mA, I

B

= 50mA  

I

C

= 500mA, V

CE

= 10V  

—

—

—

Collector-Emitter Saturation Voltage (Note 7)  

V

V

CE(sat)  

Base-Emitter Saturation Voltage (Note 7)  

Base-Emitter Turn-On Voltage (Note 7)  

—

—

—

—

1.0  

1.0  

V

V

V

BE(sat)  

V

BE(on)  

I

C

= 50mA, V

CE

= 10V  

f = 100MHz  

Transitional Frequency  

Output Capacitance  

100  

—

—

–

MHz  

pF  

f

T  

—

10  

C

obo  

V

CB

= 10V, f = 1MHz,  

Note:  

7. Measured under pulsed conditions. Pulse width

≤ 300μs. Duty cycle ≤

2%.  

FCX495  

3 of 6  

September 2015  

© Diodes Incorporated  

Da

tasheet Number: DS33057 Rev. 7 – 2  

FCX495  

Typical Electrical Characteristics  

FCX495  

4 of 6  

September 2015  

© Diodes Incorporated  

Da

tasheet Number: DS33057 Rev. 7 – 2  

FCX495  

Package Outline Dimensions  

Please see AP02002 at

r the latest version.  

D1  

c

SOT89  

Dim Min

 

Max  

H

E

Typ  

1.50  

0.56  

0.48  

0.38  

4.50  

A

B

B1  

c

1.40  

0.50  

0.42  

0.35  

4.40  

1.62  

1.61  

2.40  

2.05  

–

1.60  

0.62  

0.54  

0.43  

4.60  

B1  

L

B

D

D1  

D2  

E

E2  

e

1.83 1.733  

e

1.81  

2.60  

2.35  

–

1.71  

2.50  

2.20  

1.50  

4.10  

2.78  

1.05  

D2  

8

°

(

H

H1  

L

3.95  

2.63  

0.90  

4.25  

2.93  

1.20  

4

X

)

H1  

E2  

L1

0.327 0.527 0.427  

0.20 0.40 0.30  

A

z

All Dimensions in mm  

L1  

D

z

Suggested Pad Layout  

Please see AP02001 at

r the latest version.  

X2  

Value  

(in mm)  

1.500  

0.244  

0.580  

0.760  

1.933  

1.730  

3.030  

1.500  

0.770  

4.530  

Dimensions  

C

G

X

X1  

X2  

Y

Y1  

Y2  

Y3  

Y4  

Y3  

Y1  

Y4  

X

G

Y

Y2  

C

X1  

Note:  

For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between  

device Terminals and PCB tracking.  

FCX495  

5 of 6  

September 2015  

© Diodes Incorporated  

Da

tasheet Number: DS33057 Rev. 7 – 2  

FCX495  

IMPORTANT NOTICE  

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  

trademark rights, nor the rights of others.

 

Any Customer or user of this document or products described herein in such applications shall assume  

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  

website, harmless against all damages.  

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  

noted herein may also be covered by one or more United States, international or foreign trademarks.  

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  

final and determinative format released by Diodes Incorporated.  

LIFE SUPPORT  

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  

A. Life

 

support devices or systems are devices or systems which:  

1. are intended to implant into the body, or  

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  

labeling can be reasonably expected to result in significant injury to the user.  

B. A

 

critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  

failure of the life support device or to affect its safety or effectiveness.  

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  

information or support that may be provided by Diodes Incorporated.

 

Further, Customers must fully indemnify Diodes Incorporated and its  

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  

Copyright © 2015, Diodes Incorporated  

FCX495  

6 of 6  

September 2015  

© Diodes Incorporated  

Da

tasheet Number: DS33057 Rev. 7 – 2